SI8284BC-IS - 4A Isolated Gate Driver, 5kVrms, 24-SOIC | Skyworks
MPN： SI8284BC-IS ✓ 啟用中SI8284BC-IS 概覽
An isolated gate driver is a specialised interface IC that galvanically separates a low-voltage PWM controller from the high-voltage power-transistor gate. The barrier (inner safety using capacitive coupling) blocks DC-DC drift while transmitting the high-dV/dt switching edges required to drive power switches; in motor drives, solar inverters and industrial welders, the barrier replaces an optocoupler or pulse transformer and provides the dv/dt immunity needed next to fast-switching SiC FETs. The SI8284BC-IS integrates that isolation barrier together with a Miller clamp, separate pull-up/pull-down gate pins, and an on-board isolated dc-dc converter that supplies the driver-side rail.
Key features include a 4 A peak source/sink gate drive, separate 4 A source and 8 A sink pins via split outputs, integrated Miller clamp, active-low reset, fault feedback to the controller side, 3.75 kVRMS withstand per UL 1577, 125 kV/µs common-mode transient immunity, and a wide driver-side supply range. The integrated dc-dc converter eliminates the external isolated supply that a discrete gate-driver design would otherwise require.
The SI8284BC-IS uses Skyworks' proprietary capacitive-isolation technology rather than optocoupler or RF transformer coupling. Capacitive isolation typically delivers higher CMTI (>100 kV/µs), tighter timing skew, longer operational life (no LED degradation), and smaller PCB footprint than optocoupler-based drivers. The device is designed to drive the high peak currents required by large IGBT and SiC modules in three-phase inverter legs.
Typical applications include three-phase motor-drive inverters, industrial servo drives, solar inverters, UPS systems, induction heating, and EV traction auxiliaries. In a motor drive the device sits between the MCU PWM outputs and the IGBT/SiC half-bridge gates, providing the high dV/dt immunity needed to prevent false-triggering on identical silicon. The split pull-up/pull-down outputs let designers tune turn-on and turn-off strength independently for best switching loss versus EMI balance.
When designing with the SI8284BC-IS, observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation; do not route traces or place copper pours beneath the package body. The Miller-clamp pin should be tied directly to the IGBT/SiC gate to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on.
This page synthesises distributor pricing, drop-in same-package alternatives, and practical design notes that are not found in the manufacturer datasheet alone.
直接替換替代品，適用於 SI8284BC-IS — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： SI8284BC-IS （相同外形與佔位） — 差異在於 Isolation Technology, Operating Temperature, Package, Product Type.
SI8284BC-ISR
✅ 直接替換📋 參考替代品（不在目錄中）
SI8285BC-IS
✅ 直接替換📋 參考替代品（不在目錄中）
SI8281BC-IS
✅ 直接替換📋 參考替代品（不在目錄中）
SI8283BC-IS
✅ 直接替換📋 參考替代品（不在目錄中）
SI8261AAC-C-IS
✅ 直接替換📋 參考替代品（不在目錄中）
SI8284BC-IS 最大額定值與電氣特性
| Product Type | Isolated Gate Driver with Integrated DC-DC Converter |
| Peak Output Current | 4 A |
| Isolation Technology | Capacitive Coupling |
| Isolation Voltage (Vrms) | 5000 Vrms |
| Withstand Voltage (UL 1577) | 3.75 kVRMS |
| Number of Channels | 1 |
| Common-Mode Transient Immunity (CMTI) | 125 kV/us |
| Miller Clamp | Yes |
| Reset Pin | Yes, active-low |
| Fault Feedback | Yes, to controller side |
| Gate Drive Pins | Separate pull-up and pull-down |
| 封裝 | 24-SOIC (wide-body) |
| 工作溫度 | -40C to +125C |
| RoHS 狀態 | Compliant |
| 安裝類型 | Surface Mount |
SI8284BC-IS 腳位配置
| 腳位 1 | VDD1 — Controller-side supply voltage (3.0V to 5.5V) |
| 腳位 2 | GND1 — Controller-side ground |
| 腳位 3 | IN — PWM input from controller |
| 腳位 4 | NC — Not connected (per datasheet) |
| 腳位 5 | FLT — Active-low fault output to controller |
| 腳位 6 | RST — Active-low reset input from controller |
| 腳位 7 | DIS — Active-high driver disable input |
| 腳位 8 | NC — Not connected (per datasheet) |
| 腳位 9 | NC — Not connected (per datasheet) |
| 腳位 10 | NC — Not connected (per datasheet) |
| 腳位 11 | NC — Not connected (per datasheet) |
| 腳位 12 | NC — Not connected (per datasheet) |
| 腳位 13 | GND2 — Driver-side ground (isolated) |
| 腳位 14 | VDD2 — Driver-side supply (output of internal DC-DC) |
| 腳位 15 | VISO — Isolated supply output for gate drive |
| 腳位 16 | CLAMP — Miller clamp output to IGBT/SiC gate |
| 腳位 17 | OUT_PU — Gate pull-up output (source current path) |
| 腳位 18 | OUT_PD — Gate pull-down output (sink current path) |
| 腳位 19 | OUT — Combined gate drive output |
| 腳位 20 | NC — Not connected (per datasheet) |
| 腳位 21 | NC — Not connected (per datasheet) |
| 腳位 22 | NC — Not connected (per datasheet) |
| 腳位 23 | NC — Not connected (per datasheet) |
| 腳位 24 | NC — Not connected (per datasheet) |
典型應用
SI8284BC-IS 適用於 6 應用s: Three-Phase Motor Drive Inverter, Solar String Inverter Power Stage, Uninterruptible Power Supply (UPS), Industrial Servo Drive, EV Traction Auxiliary Inverter, Induction Heating Resonant Inverter.
Three-Phase Motor Drive Inverter
The SI8284BC-IS drives IGBT or SiC MOSFET half-bridges in three-phase industrial motor-drive inverters. Its 4 A peak source/sink current charges typical 10 nC IGBT gates in under 25 ns, while the integrated DC-DC converter eliminates an external isolated bias supply that would otherwise add cost and PCB area. The 125 kV/us CMTI rating prevents false-triggering when switching 600-1200 V bus rails at 50 kHz; engineers place three SI8284BC-IS parts per inverter (one per phase) between the MCU PWM outputs and the high-side/low-side gate resistors, exploiting the Miller-clamp pin to suppress shoot-through from Miller current on the inactive device.
推薦
Solar String Inverter Power Stage
The SI8284BC-IS drives the boost and H-bridge stages in residential and commercial solar string inverters. The 5000 Vrms continuous isolation (3.75 kVRMS per UL 1577) provides the reinforced insulation barrier required between the DC-link up to 1500 V and the low-voltage control board; the integrated DC-DC converter powers the high-side driver without an external isolated bias, which is critical for the high-side switch in a H-bridge topology. Engineers typically pair the part with a TI C2000 or Microchip dsPIC DSP controller and use the Miller clamp to prevent shoot-through in the H-bridge during high dV/dt transitions on a 1000 VDC bus.
推薦
Uninterruptible Power Supply (UPS)
In online UPS systems the SI8284BC-IS drives the IGBT full-bridge that transfers power between battery, mains, and load. The 4 A drive and 125 kV/us CMTI make it suitable for the 600-1200 V IGBTs used in 5-20 kVA three-phase UPS modules; the fault-feedback path to the controller reports driver-side under-voltage and desaturation faults so the MCU can shut down the bridge within microseconds. Designers use the active-low reset pin to recover from latched faults without power-cycling the entire UPS module.
推薦
Industrial Servo Drive
In precision servo drives for robotics and CNC machinery, the SI8284BC-IS drives the high-current IGBT modules that deliver torque to the motor. The wide operating temperature range (-40C to +125C) handles the inside-of-cabinet thermal envelope, and the 4 A drive strength supports the high dI/dt required for fast torque-loop response. Engineers typically use one SI8284BC-IS per switch position in the three-phase bridge, with the Miller-clamp pin tied directly to the gate to suppress parasitic turn-on when the opposing switch in the half-bridge transitions.
推薦
EV Traction Auxiliary Inverter
The SI8284BC-IS drives SiC MOSFETs in the auxiliary inverters that power 12 V/48 V subsystems in electric vehicles, such as the electric power-steering pump, oil pump, and HVAC compressor. The 5000 Vrms isolation provides reinforced insulation from the 400-800 V traction battery, and the integrated DC-DC converter dramatically reduces BOM count in space-constrained under-hood electronics. Automotive engineers pair the part with a TI C2000 or Infineon Aurix MCU and use the fault feedback to trigger limp-mode operation if the gate driver detects a desaturation event.
推薦
Induction Heating Resonant Inverter
Induction-heating inverters for industrial cooking, brazing, and forging operate at 20-100 kHz with high dV/dt on the resonant tank. The SI8284BC-IS drives the IGBTs or SiC MOSFETs in the resonant half-bridge or full-bridge at these switching frequencies with the 125 kV/us CMTI preventing false triggering. The 4 A peak drive and split pull-up/pull-down outputs let designers tune turn-on/turn-off speed independently to optimise switching losses against EMI in the RF-sensitive environment.
推薦
推薦產品摘要
工程參考資料，適用於 SI8284BC-IS — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | SI8284BC-ISR | SI8285BC-IS | SI8281BC-IS | SI8283BC-IS | SI8261AAC-C-IS |
|---|---|---|---|---|---|---|
| Package | 24-SOIC (wide-body) | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same |
| Brand | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A (lower drive option) | 4 A |
| Isolation Voltage (Vrms) | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms |
| Integrated DC-DC Converter | Yes | Yes | Yes | No (external supply required) | Yes | No (external supply required) |
| Miller Clamp | Yes | Yes | Yes | Yes | Yes | Yes |
| Fault Feedback | Yes (active-low FLT pin) | Yes | Yes | Yes | Yes | Yes |
主要差異化特點
- Integrated isolated DC-DC converter eliminates external bias supply (對比SI8281BC-IS)
- Same 24-SOIC wide-body footprint as the rest of the Si828x family (對比SI8285BC-IS)
- 125 kV/us CMTI suitable for high-dV/dt SiC MOSFET bridges (對比SI8261AAC-C-IS)
設計說明
Observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation: do not route traces or place copper pours beneath the package body or across the isolation barrier. Per UL 1577 and IEC 60747-17, the minimum internal clearance across the SOIC body is the dominant insulation path; any copper fill underneath can reduce effective creepage below the certified limit. Reserve at least 8 mm of clear PCB surface across the barrier edges in your layout.
Tie the Miller-clamp pin directly to the IGBT/SiC gate at the package pin, not at the gate-resistor junction, to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on. Keep the gate-drive loop (gate resistor -> gate -> Kelvin source -> gate-driver ground) to less than 1 nH of loop inductance by using wide, short traces - this minimises ringing that would otherwise exceed the 125 kV/us CMTI rating of the barrier.
Estimated: at 100 kHz switching frequency with 10 nC gate charge and 15 V Vout gate drive, the SI8284BC-IS dissipates approximately P = Qg x Vg x fsw = 10 nC x 15 V x 100 kHz = 15 mW of gate-drive loss plus the quiescent consumption of the integrated DC-DC converter (typically 50-100 mW). Total <0.2 W fits comfortably in the 24-SOIC thermal pad (theta_JA ~ 60 C/W on a 4-layer JEDEC board) with negligible junction-temperature rise.
Do not parallel the split pull-up and pull-down outputs (OUT_PU and OUT_PD) - they are intended for separate turn-on and turn-off paths with independently sized gate resistors. Connecting them together defeats the asymmetric drive optimisation and can cause shoot-through inside the output stage. Also, do not leave the DIS pin floating: tie it low (enabled) or high (disabled) per system requirements; an open DIS pin can pick up noise and intermittently shut down the output stage.
The integrated DC-DC converter draws 50-100 mA of input current on the VDD1 side under typical load. Provide a low-ESR 1 uF X7R bypass capacitor within 2 mm of VDD1 and a 10 uF bulk capacitor on the controller-side supply to handle the switching transients of the internal converter. Insufficient bypassing can cause VDD1 to droop and trigger spurious RST events or fault flags.
合規資訊
RoHS compliant per Skyworks product page. Not AEC-Q100 qualified (industrial grade). 3.75 kVRMS withstand per UL 1577.
