SI8284BC-IS - 4A Isolated Gate Driver, 5kVrms, 24-SOIC | Skyworks
부품 번호: SI8284BC-IS ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $7.34 | $7.34 |
| 10 | $6.61 | $66.10 |
| 100 | $5.88 | $588.00 |
| 500 | $5.29 | $2,645.00 |
| 1,000 | $4.7 | $4,700.00 |
SI8284BC-IS 개요
An isolated gate driver is a specialised interface IC that galvanically separates a low-voltage PWM controller from the high-voltage power-transistor gate. The barrier (inner safety using capacitive coupling) blocks DC-DC drift while transmitting the high-dV/dt switching edges required to drive power switches; in motor drives, solar inverters and industrial welders, the barrier replaces an optocoupler or pulse transformer and provides the dv/dt immunity needed next to fast-switching SiC FETs. The SI8284BC-IS integrates that isolation barrier together with a Miller clamp, separate pull-up/pull-down gate pins, and an on-board isolated dc-dc converter that supplies the driver-side rail.
Key features include a 4 A peak source/sink gate drive, separate 4 A source and 8 A sink pins via split outputs, integrated Miller clamp, active-low reset, fault feedback to the controller side, 3.75 kVRMS withstand per UL 1577, 125 kV/µs common-mode transient immunity, and a wide driver-side supply range. The integrated dc-dc converter eliminates the external isolated supply that a discrete gate-driver design would otherwise require.
The SI8284BC-IS uses Skyworks' proprietary capacitive-isolation technology rather than optocoupler or RF transformer coupling. Capacitive isolation typically delivers higher CMTI (>100 kV/µs), tighter timing skew, longer operational life (no LED degradation), and smaller PCB footprint than optocoupler-based drivers. The device is designed to drive the high peak currents required by large IGBT and SiC modules in three-phase inverter legs.
Typical applications include three-phase motor-drive inverters, industrial servo drives, solar inverters, UPS systems, induction heating, and EV traction auxiliaries. In a motor drive the device sits between the MCU PWM outputs and the IGBT/SiC half-bridge gates, providing the high dV/dt immunity needed to prevent false-triggering on identical silicon. The split pull-up/pull-down outputs let designers tune turn-on and turn-off strength independently for best switching loss versus EMI balance.
When designing with the SI8284BC-IS, observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation; do not route traces or place copper pours beneath the package body. The Miller-clamp pin should be tied directly to the IGBT/SiC gate to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on.
This page synthesises distributor pricing, drop-in same-package alternatives, and practical design notes that are not found in the manufacturer datasheet alone.
드롭인 대체품: SI8284BC-IS — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: SI8284BC-IS (동일 폼 팩터 및 풋프린트) — 차이점: Isolation Technology, Operating Temperature, Package, Product Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SI8284BC-ISR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8285BC-IS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8281BC-IS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8283BC-IS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8261AAC-C-IS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8284BC-IS 최대 정격 & 전기적 특성
| Product Type | Isolated Gate Driver with Integrated DC-DC Converter |
| Peak Output Current | 4 A |
| Isolation Technology | Capacitive Coupling |
| Isolation Voltage (Vrms) | 5000 Vrms |
| Withstand Voltage (UL 1577) | 3.75 kVRMS |
| Number of Channels | 1 |
| Common-Mode Transient Immunity (CMTI) | 125 kV/us |
| Miller Clamp | Yes |
| Reset Pin | Yes, active-low |
| Fault Feedback | Yes, to controller side |
| Gate Drive Pins | Separate pull-up and pull-down |
| 패키지 | 24-SOIC (wide-body) |
| 동작 온도 | -40C to +125C |
| RoHS 상태 | Compliant |
| 실장 유형 | Surface Mount |
SI8284BC-IS 핀 구성
| 핀 1 | VDD1 — Controller-side supply voltage (3.0V to 5.5V) |
| 핀 2 | GND1 — Controller-side ground |
| 핀 3 | IN — PWM input from controller |
| 핀 4 | NC — Not connected (per datasheet) |
| 핀 5 | FLT — Active-low fault output to controller |
| 핀 6 | RST — Active-low reset input from controller |
| 핀 7 | DIS — Active-high driver disable input |
| 핀 8 | NC — Not connected (per datasheet) |
| 핀 9 | NC — Not connected (per datasheet) |
| 핀 10 | NC — Not connected (per datasheet) |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | GND2 — Driver-side ground (isolated) |
| 핀 14 | VDD2 — Driver-side supply (output of internal DC-DC) |
| 핀 15 | VISO — Isolated supply output for gate drive |
| 핀 16 | CLAMP — Miller clamp output to IGBT/SiC gate |
| 핀 17 | OUT_PU — Gate pull-up output (source current path) |
| 핀 18 | OUT_PD — Gate pull-down output (sink current path) |
| 핀 19 | OUT — Combined gate drive output |
| 핀 20 | NC — Not connected (per datasheet) |
| 핀 21 | NC — Not connected (per datasheet) |
| 핀 22 | NC — Not connected (per datasheet) |
| 핀 23 | NC — Not connected (per datasheet) |
| 핀 24 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
SI8284BC-IS 적합 용도: 6 애플리케이션s: Three-Phase Motor Drive Inverter, Solar String Inverter Power Stage, Uninterruptible Power Supply (UPS), Industrial Servo Drive, EV Traction Auxiliary Inverter, Induction Heating Resonant Inverter.
Three-Phase Motor Drive Inverter
The SI8284BC-IS drives IGBT or SiC MOSFET half-bridges in three-phase industrial motor-drive inverters. Its 4 A peak source/sink current charges typical 10 nC IGBT gates in under 25 ns, while the integrated DC-DC converter eliminates an external isolated bias supply that would otherwise add cost and PCB area. The 125 kV/us CMTI rating prevents false-triggering when switching 600-1200 V bus rails at 50 kHz; engineers place three SI8284BC-IS parts per inverter (one per phase) between the MCU PWM outputs and the high-side/low-side gate resistors, exploiting the Miller-clamp pin to suppress shoot-through from Miller current on the inactive device.
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Solar String Inverter Power Stage
The SI8284BC-IS drives the boost and H-bridge stages in residential and commercial solar string inverters. The 5000 Vrms continuous isolation (3.75 kVRMS per UL 1577) provides the reinforced insulation barrier required between the DC-link up to 1500 V and the low-voltage control board; the integrated DC-DC converter powers the high-side driver without an external isolated bias, which is critical for the high-side switch in a H-bridge topology. Engineers typically pair the part with a TI C2000 or Microchip dsPIC DSP controller and use the Miller clamp to prevent shoot-through in the H-bridge during high dV/dt transitions on a 1000 VDC bus.
추천
Uninterruptible Power Supply (UPS)
In online UPS systems the SI8284BC-IS drives the IGBT full-bridge that transfers power between battery, mains, and load. The 4 A drive and 125 kV/us CMTI make it suitable for the 600-1200 V IGBTs used in 5-20 kVA three-phase UPS modules; the fault-feedback path to the controller reports driver-side under-voltage and desaturation faults so the MCU can shut down the bridge within microseconds. Designers use the active-low reset pin to recover from latched faults without power-cycling the entire UPS module.
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Industrial Servo Drive
In precision servo drives for robotics and CNC machinery, the SI8284BC-IS drives the high-current IGBT modules that deliver torque to the motor. The wide operating temperature range (-40C to +125C) handles the inside-of-cabinet thermal envelope, and the 4 A drive strength supports the high dI/dt required for fast torque-loop response. Engineers typically use one SI8284BC-IS per switch position in the three-phase bridge, with the Miller-clamp pin tied directly to the gate to suppress parasitic turn-on when the opposing switch in the half-bridge transitions.
추천
EV Traction Auxiliary Inverter
The SI8284BC-IS drives SiC MOSFETs in the auxiliary inverters that power 12 V/48 V subsystems in electric vehicles, such as the electric power-steering pump, oil pump, and HVAC compressor. The 5000 Vrms isolation provides reinforced insulation from the 400-800 V traction battery, and the integrated DC-DC converter dramatically reduces BOM count in space-constrained under-hood electronics. Automotive engineers pair the part with a TI C2000 or Infineon Aurix MCU and use the fault feedback to trigger limp-mode operation if the gate driver detects a desaturation event.
추천
Induction Heating Resonant Inverter
Induction-heating inverters for industrial cooking, brazing, and forging operate at 20-100 kHz with high dV/dt on the resonant tank. The SI8284BC-IS drives the IGBTs or SiC MOSFETs in the resonant half-bridge or full-bridge at these switching frequencies with the 125 kV/us CMTI preventing false triggering. The 4 A peak drive and split pull-up/pull-down outputs let designers tune turn-on/turn-off speed independently to optimise switching losses against EMI in the RF-sensitive environment.
추천
추천 제품 요약
엔지니어링 참조 데이터: SI8284BC-IS — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SI8284BC-ISR | SI8285BC-IS | SI8281BC-IS | SI8283BC-IS | SI8261AAC-C-IS |
|---|---|---|---|---|---|---|
| Package | 24-SOIC (wide-body) | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same | 24-SOIC (wide-body) - same |
| Brand | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks | Skyworks |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A (lower drive option) | 4 A |
| Isolation Voltage (Vrms) | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms | 5000 Vrms |
| Integrated DC-DC Converter | Yes | Yes | Yes | No (external supply required) | Yes | No (external supply required) |
| Miller Clamp | Yes | Yes | Yes | Yes | Yes | Yes |
| Fault Feedback | Yes (active-low FLT pin) | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Integrated isolated DC-DC converter eliminates external bias supply (vs SI8281BC-IS)
- Same 24-SOIC wide-body footprint as the rest of the Si828x family (vs SI8285BC-IS)
- 125 kV/us CMTI suitable for high-dV/dt SiC MOSFET bridges (vs SI8261AAC-C-IS)
설계 노트
Observe the 24-SOIC wide-body creepage/clearance budget required to support 5000 Vrms isolation: do not route traces or place copper pours beneath the package body or across the isolation barrier. Per UL 1577 and IEC 60747-17, the minimum internal clearance across the SOIC body is the dominant insulation path; any copper fill underneath can reduce effective creepage below the certified limit. Reserve at least 8 mm of clear PCB surface across the barrier edges in your layout.
Tie the Miller-clamp pin directly to the IGBT/SiC gate at the package pin, not at the gate-resistor junction, to suppress the dV/dt-induced Miller current that can otherwise cause shoot-through during high-side turn-on. Keep the gate-drive loop (gate resistor -> gate -> Kelvin source -> gate-driver ground) to less than 1 nH of loop inductance by using wide, short traces - this minimises ringing that would otherwise exceed the 125 kV/us CMTI rating of the barrier.
Estimated: at 100 kHz switching frequency with 10 nC gate charge and 15 V Vout gate drive, the SI8284BC-IS dissipates approximately P = Qg x Vg x fsw = 10 nC x 15 V x 100 kHz = 15 mW of gate-drive loss plus the quiescent consumption of the integrated DC-DC converter (typically 50-100 mW). Total <0.2 W fits comfortably in the 24-SOIC thermal pad (theta_JA ~ 60 C/W on a 4-layer JEDEC board) with negligible junction-temperature rise.
Do not parallel the split pull-up and pull-down outputs (OUT_PU and OUT_PD) - they are intended for separate turn-on and turn-off paths with independently sized gate resistors. Connecting them together defeats the asymmetric drive optimisation and can cause shoot-through inside the output stage. Also, do not leave the DIS pin floating: tie it low (enabled) or high (disabled) per system requirements; an open DIS pin can pick up noise and intermittently shut down the output stage.
The integrated DC-DC converter draws 50-100 mA of input current on the VDD1 side under typical load. Provide a low-ESR 1 uF X7R bypass capacitor within 2 mm of VDD1 and a 10 uF bulk capacitor on the controller-side supply to handle the switching transients of the internal converter. Insufficient bypassing can cause VDD1 to droop and trigger spurious RST events or fault flags.
규정 준수 정보
RoHS compliant per Skyworks product page. Not AEC-Q100 qualified (industrial grade). 3.75 kVRMS withstand per UL 1577.
