STB120N10F7 - 120A, 100V N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STB120N10F7 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.85 | $1.850,00 |
STB120N10F7 Übersicht
A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STB120N10F7 belongs to the STripFET F7 series, which is known for low on-resistance and fast switching.
Key features of the STB120N10F7 include a very low on-resistance (RDS(on)) of typically 6.5 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 400 mJ, ensuring reliable operation under inductive load switching. The gate charge is optimized for efficient high-frequency operation, and the device is RoHS compliant and halogen-free, meeting modern environmental standards.
The STB120N10F7 utilizes STMicroelectronics' advanced STripFET F7 technology, which employs a deep-groove structure to reduce on-resistance and parasitic capacitances. This results in improved figure of merit (FOM) compared to previous generations, enabling higher switching frequencies and lower power dissipation. The device's low thermal resistance (junction-to-case) of 0.5°C/W allows efficient heat transfer to the PCB, supporting high current operation with proper thermal management.
Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In a DC-DC converter, the STB120N10F7 can be used as a synchronous rectifier or main switch, where its low RDS(on) reduces conduction losses and its fast switching minimizes switching losses. In motor control, it can drive DC motors or brushless DC motors with high efficiency, thanks to its high current capability and ruggedness.
When designing with this device, ensure adequate gate drive voltage (at least 10V) to achieve the lowest on-resistance. The gate-source voltage must not exceed ±20V to prevent oxide breakdown. Proper PCB layout with wide copper traces and thermal vias is essential to dissipate heat effectively, especially at high currents. Consider using a gate resistor to control switching speed and reduce EMI.
Drop-in-Alternativen für STB120N10F7 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STB120N10F6
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STB120N10F7-1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRFB4110
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRFB4115
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
FDP120N10
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STB120N10F7 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at 25°C | 120 A |
| Continuous Drain Current (ID) at 100°C | 85 A |
| Pulsed Drain Current (IDM) | 480 A |
| Gate-to-Source Voltage (VGS) | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | 6.5 mΩ (typ) |
| Total Gate Charge (Qg) | 70 nC (typ) |
| Input Capacitance (Ciss) | 4500 pF (typ) |
| Output Capacitance (Coss) | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | 150 pF (typ) |
| Avalanche Energy (EAS) | 400 mJ |
| Thermal Resistance (Junction-to-Case) | 0.5 °C/W |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C |
| Gehäuse | D2PAK (TO-263) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
STB120N10F7 Pin-Konfiguration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Drain — Drain terminal (tab) |
Sicherer Arbeitsbereich
Typische Anwendungen
STB120N10F7 ist geeignet für 6 Anwendungs: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Automotive Applications, Solar Inverters.
DC-DC Converters
The STB120N10F7 is ideal for DC-DC converter topologies such as buck, boost, and synchronous rectification. Its low on-resistance (6.5 mΩ) minimizes conduction losses, while the low gate charge (70 nC) enables high-frequency switching, improving power density and efficiency. In a typical synchronous buck converter, the STB120N10F7 can be used as the high-side or low-side switch, handling currents up to 120A. The device's fast switching characteristics reduce transition losses, and its avalanche ruggedness ensures reliability during load transients. Proper gate drive and PCB layout are essential to fully exploit its performance.
Empfohlen
Motor Control
The STB120N10F7 is well-suited for motor control applications, including DC motor drives and brushless DC (BLDC) motor controllers. Its high continuous drain current (120A) and low on-resistance enable efficient power delivery to the motor, while the avalanche energy rating (400 mJ) provides robustness against inductive spikes during commutation. In a typical BLDC motor driver, the STB120N10F7 can be used in the three-phase inverter bridge, switching at PWM frequencies up to 20 kHz. The device's low thermal resistance (0.5°C/W) allows effective heat dissipation when mounted on a suitable heatsink or PCB copper area. For optimal performance, use a gate driver IC with appropriate dead-time control to prevent shoot-through.
Empfohlen
Power Supplies
The STB120N10F7 is used in power supply units (PSUs) for servers, telecom, and industrial equipment. Its low RDS(on) reduces conduction losses, improving overall efficiency, which is critical for meeting energy efficiency standards. In a typical switch-mode power supply (SMPS), the STB120N10F7 can be used as the main switch in a flyback or forward converter, operating at switching frequencies from 50 kHz to 200 kHz. The device's low gate charge simplifies the gate drive circuit, and its avalanche ruggedness ensures reliable operation during output short circuits. Thermal management is crucial; the D2PAK package should be soldered to a large copper area to dissipate heat effectively.
Empfohlen
Battery Management Systems
The STB120N10F7 is used in battery management systems (BMS) for electric vehicles, power tools, and energy storage systems. Its high current rating (120A) allows it to handle the high currents in battery packs, while its low on-resistance minimizes power loss and heat generation. In a typical BMS, the STB120N10F7 is used as a charge/discharge switch, controlled by a battery protection IC. The device's avalanche ruggedness is important for handling inductive loads and transient voltages. The D2PAK package is suitable for surface-mount assembly, and the low thermal resistance aids in heat dissipation. Ensure proper gate drive voltage (10V) to achieve the lowest RDS(on) and reduce conduction losses.
Empfohlen
Automotive Applications
The STB120N10F7 is suitable for automotive applications such as electric power steering (EPS), DC-DC converters for hybrid vehicles, and LED lighting. Its high current capability and low on-resistance make it ideal for high-power switching in the harsh automotive environment. The device operates over a junction temperature range of -55°C to +175°C, meeting the requirements for under-hood applications. In an EPS system, the STB120N10F7 can be used in the motor drive bridge, handling currents up to 120A. The device's avalanche ruggedness ensures reliability during load dumps and inductive transients. For automotive use, ensure the device is AEC-Q101 qualified; the standard STB120N10F7 is not, but an automotive-grade variant may be available.
Empfohlen
Solar Inverters
The STB120N10F7 is used in solar inverter systems for DC-AC power conversion. Its high voltage rating (100V) and current capability (120A) make it suitable for the boost stage and inverter bridge. The low on-resistance reduces conduction losses, improving the overall efficiency of the inverter, which is critical for maximizing energy harvest. In a typical solar inverter, the STB120N10F7 can be used in a full-bridge topology, switching at frequencies up to 20 kHz. The device's low gate charge enables efficient high-frequency operation, and its avalanche ruggedness ensures reliability during grid disturbances. Proper thermal management is essential; use a heatsink or forced air cooling to maintain junction temperature within limits.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STB120N10F7 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STB120N10F6 | IRFB4110 | IRFB4115 | FDP120N10 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | Infineon | onsemi |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 100 V | 150 V | 100 V |
| Continuous Drain Current (ID) at 25°C | 120 A | 120 A | 120 A | 104 A | 120 A |
| On-Resistance (RDS(on)) | 6.5 mΩ | 8 mΩ | 4.5 mΩ | 9.3 mΩ | 7.5 mΩ |
| Total Gate Charge (Qg) | 70 nC | 80 nC | 120 nC | 110 nC | 75 nC |
| Avalanche Energy (EAS) | 400 mJ | 300 mJ | 500 mJ | 400 mJ | 350 mJ |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Wichtigste Unterscheidungsmerkmale
- Low on-resistance (6.5 mΩ) compared to STB120N10F6 (8 mΩ) (vs. STB120N10F6)
- Higher avalanche energy (400 mJ) than STB120N10F6 (300 mJ) (vs. STB120N10F6)
- Lower gate charge (70 nC) than IRFB4110 (120 nC) (vs. IRFB4110)
Designhinweise
The STB120N10F7 has a junction-to-case thermal resistance of 0.5°C/W. At 120A and RDS(on) of 6.5 mΩ, the conduction loss is approximately 93.6W (I^2*R). This will cause a junction temperature rise of 46.8°C above the case temperature. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 175°C. Use thermal vias and a large copper pour on the drain pad for effective heat dissipation.
For high-current applications, use wide and short traces for the drain and source connections to minimize parasitic inductance and resistance. Place the gate resistor close to the gate pin to reduce ringing. Use a low-ESR ceramic capacitor (e.g., 100nF) between gate and source to suppress high-frequency noise. The D2PAK package's exposed pad should be soldered to a large copper area with multiple vias to the ground plane for thermal management.
Do not exceed the maximum gate-source voltage of ±20V, as this can damage the oxide layer. Ensure the gate drive voltage is at least 10V to achieve the lowest on-resistance. When switching inductive loads, the avalanche energy rating of 400 mJ must not be exceeded; use a snubber circuit or freewheeling diode if necessary. Also, avoid operating the device beyond the SOA limits, especially during linear mode operation.
Compliance-Informationen
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; automotive-grade variant may be available.