STB140N4F8 - 40V, 120A N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STB140N4F8 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.85 | $1.850,00 |
STB140N4F8 Übersicht
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, offering high input impedance and fast switching speeds. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STB140N4F8 include a low on-resistance (RDS(on)) of typically 4.5 mΩ at VGS=10V, which minimizes conduction losses and improves efficiency. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 200 mJ, ensuring reliable operation under inductive load switching. The gate charge (Qg) is 60 nC, enabling fast switching and reduced driver requirements. The operating junction temperature range is -55°C to +175°C, suitable for harsh environments.
The STB140N4F8 utilizes STMicroelectronics' advanced strip layout technology, which reduces on-resistance and parasitic capacitances, enhancing switching performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Its robust design includes built-in protection against electrostatic discharge (ESD) up to 2kV (HBM), improving reliability in manufacturing and handling.
Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In automotive applications, it is used in electric power steering, engine control units, and LED lighting. The low RDS(on) and high current capability make it ideal for synchronous rectification in high-efficiency power converters.
When designing with this MOSFET, ensure proper gate drive voltage (10V recommended) to achieve minimum on-resistance. The device is not intended for linear operation; use it in switching applications to avoid thermal runaway. Adequate PCB copper area and thermal vias are essential to dissipate heat effectively, especially at high currents.
Drop-in-Alternativen für STB140N4F8 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
STB120N4F6
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STB140N4F8-1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STB140N4F8T4
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IPB120N04S4-02
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRF1404
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
STB140N4F8 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at 25°C | 120 A |
| Continuous Drain Current (ID) at 100°C | 85 A |
| Pulsed Drain Current (IDM) | 480 A |
| On-Resistance (RDS(on)) at VGS=10V | 4.5 mΩ (typ) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Charge (Qg) | 60 nC (typ) |
| Input Capacitance (Ciss) | 4200 pF (typ) |
| Output Capacitance (Coss) | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | 250 pF (typ) |
| Avalanche Energy (EAS) | 200 mJ |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C |
| Gehäuse | D2PAK (TO-263) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
| ESD Rating (HBM) | 2 kV |
STB140N4F8 Pin-Konfiguration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the tab |
| Pin 3 | Source — Source terminal |
| Pin 4 | Drain (tab) — Exposed pad connected to drain |
Sicherer Arbeitsbereich
Typische Anwendungen
STB140N4F8 ist geeignet für 6 Anwendungs: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Automotive Electric Power Steering, LED Lighting.
DC-DC Converters
The STB140N4F8 is used as a synchronous rectifier in DC-DC converters. Its low RDS(on) of 4.5mΩ minimizes conduction losses, improving efficiency. In a typical buck converter, the MOSFET is placed in the low-side position, switching at frequencies up to 500kHz. The low gate charge (60nC) allows fast switching, reducing switching losses. For a 12V to 5V conversion at 20A, the power dissipation is approximately 1.8W, requiring adequate copper area for heat dissipation. Compared to Schottky diodes, the MOSFET reduces forward voltage drop, increasing overall efficiency by 2-3%.
Empfohlen
Motor Control
In motor control applications, the STB140N4F8 is used in the H-bridge or three-phase inverter stages. Its high current capability (120A) and avalanche ruggedness (200mJ) make it suitable for driving inductive loads. The MOSFET's fast switching reduces electromagnetic interference, and its low RDS(on) minimizes heat generation. For a brushless DC motor with 30A phase current, the MOSFET dissipates about 4W, requiring a heatsink. The device's wide temperature range (-55°C to +175°C) ensures reliable operation in automotive and industrial environments.
Empfohlen
Power Supplies
The STB140N4F8 is used in switch-mode power supplies (SMPS) for primary-side switching and synchronous rectification. Its low RDS(on) and high current rating enable high-efficiency designs. In a 500W server power supply, the MOSFET operates at 100kHz, with a duty cycle of 50%. The low gate charge reduces driver losses, and the low thermal resistance (0.5°C/W) allows compact heatsinking. The device's ESD rating (2kV HBM) improves manufacturing yield.
Empfohlen
Battery Management Systems
In battery management systems (BMS), the STB140N4F8 is used for cell balancing and protection circuits. Its low RDS(on) minimizes power loss during balancing, and its high current capability handles short-circuit conditions. The MOSFET's avalanche rating ensures robustness during inductive spikes. For a 48V battery pack, the MOSFET is placed in series with the load, controlled by a BMS IC. The device's wide temperature range is essential for outdoor and automotive battery packs.
Empfohlen
Automotive Electric Power Steering
The STB140N4F8 is used in electric power steering (EPS) systems to drive the steering assist motor. Its high current capability (120A) and low RDS(on) ensure efficient power delivery. The device's AEC-Q101 qualification (if applicable) and wide temperature range make it suitable for under-hood environments. In a typical EPS system, the MOSFET is part of a three-phase inverter, switching at 20kHz. The low gate charge reduces switching losses, and the robust avalanche rating handles motor back-EMF.
Empfohlen
LED Lighting
In LED lighting, the STB140N4F8 is used in high-power LED drivers for dimming and switching. Its low RDS(on) reduces power loss, and its high current capability supports multiple LED strings. The MOSFET's fast switching enables PWM dimming at high frequencies without audible noise. For a 100W LED driver, the MOSFET dissipates about 2W, requiring minimal heatsinking. The device's compact D2PAK package is suitable for space-constrained lighting fixtures.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STB140N4F8 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STB120N4F6 | IPB120N04S4-02 | IRF1404 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | Infineon |
| VDS (V) | 40 | 40 | 40 | 40 |
| ID at 25°C (A) | 120 | 100 | 120 | 162 |
| RDS(on) (mΩ) | 4.5 | 6.0 | 4.5 | 5.5 |
| Qg (nC) | 60 | 50 | 65 | 110 |
| EAS (mJ) | 200 | 150 | 200 | 200 |
| Operating Temp (°C) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
Wichtigste Unterscheidungsmerkmale
- Lower on-resistance than STB120N4F6 (vs. STB120N4F6)
- Higher current rating than STB120N4F6 (vs. STB120N4F6)
- Lower gate charge than IRF1404 (vs. IRF1404)
Designhinweise
At 120A continuous current, the power dissipation is I²R = 120² × 0.0045 = 64.8W. With a junction-to-case thermal resistance of 0.5°C/W, the case temperature must be kept below 175°C - 64.8×0.5 = 142.6°C. Use a heatsink with thermal resistance less than (142.6 - ambient)/64.8. For 25°C ambient, heatsink Rth must be < 1.8°C/W. Ensure adequate airflow or liquid cooling for high-current applications.
For D2PAK, the exposed pad is the drain. Solder the pad to a large copper area with multiple thermal vias to improve heat dissipation. Use a minimum of 4 vias with 0.3mm diameter under the pad. Keep the gate trace short and away from high-current paths to reduce parasitic inductance. Place a 10Ω gate resistor to dampen oscillations.
Do not exceed the maximum VGS of ±20V. Use a gate driver with proper voltage clamping. Avoid operating in the linear region for extended periods; the MOSFET is designed for switching. Ensure the avalanche energy rating is not exceeded during unclamped inductive switching; add a snubber if necessary.
Compliance-Informationen
RoHS compliant and halogen-free per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, check if AEC-Q101 version is available.