STB100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
Teilenummer: STB100N10F7 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.85 | $1.850,00 |
STB100N10F7 Übersicht
A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power-handling requirements.
Key features of the STB100N10F7 include a low on-state resistance (RDS(on)) of typically 8.5 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency. The device also offers a fast switching speed with a total gate charge (Qg) of 110 nC, enabling high-frequency operation. The MOSFET is avalanche-rated, with an avalanche energy (EAS) of 400 mJ, ensuring robustness in inductive load switching. Additionally, it features a wide operating temperature range from -55°C to +175°C, making it suitable for harsh environments.
The STB100N10F7 utilizes STMicroelectronics' advanced strip-layout technology, which reduces on-state resistance and parasitic capacitances. This technology enhances the device's switching performance and thermal stability, allowing it to handle high current densities without compromising reliability. The device also includes an integrated gate-source ESD protection, improving its robustness during handling and assembly.
Typical applications include DC-DC converters, motor control circuits, power supplies, and automotive systems such as electric power steering and battery management. The high current rating and low RDS(on) make it ideal for synchronous rectification in switch-mode power supplies, where efficiency is critical. In motor control, the fast switching speed and avalanche capability ensure reliable operation under inductive load conditions.
When designing with this device, ensure adequate gate drive voltage (typically 10V) to achieve the lowest RDS(on). Proper PCB layout with short, wide traces for high-current paths is essential to minimize parasitic inductance and resistance. Additionally, consider thermal management by using the exposed pad of the D2PAK package with a sufficient copper area for heat dissipation.
Drop-in-Alternativen für STB100N10F7 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
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Alternativen anfordernSTB100N10F7 Grenzwerte & elektrische Eigenschaften
| Technology | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A |
| Continuous Drain Current (ID) at 100°C | 70 A |
| Pulsed Drain Current (IDM) | 400 A |
| Gate-to-Source Voltage (VGS) | ±20 V |
| On-State Resistance (RDS(on)) at VGS=10V | 8.5 mΩ (typ) |
| Total Gate Charge (Qg) | 110 nC |
| Input Capacitance (Ciss) | 4500 pF |
| Output Capacitance (Coss) | 700 pF |
| Reverse Transfer Capacitance (Crss) | 150 pF |
| Avalanche Energy (EAS) | 400 mJ |
| Betriebstemperaturbereich | -55°C to +175°C |
| Gehäuse | D2PAK (TO-263) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
STB100N10F7 Pin-Konfiguration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the load |
| Pin 3 | Source — Source terminal, connected to ground |
| Pin 4 | Drain (tab) — Exposed pad, connected to drain |
Sicherer Arbeitsbereich
Typische Anwendungen
STB100N10F7 ist geeignet für 6 Anwendungs: DC-DC Converters, Motor Control, Power Supplies, Automotive Systems, Battery Management Systems, Industrial Automation.
DC-DC Converters
The STB100N10F7 is ideal for DC-DC converter topologies such as buck, boost, and synchronous rectification. Its low RDS(on) of 8.5 mΩ minimizes conduction losses, improving efficiency in high-current applications. The fast switching speed, enabled by a total gate charge of 110 nC, allows operation at high frequencies, reducing the size of magnetic components. In a typical synchronous buck converter, the STB100N10F7 is used as the high-side and low-side switches, with the gate driven by a PWM controller. The device's avalanche rating of 400 mJ ensures robustness during load transients. For a 12V to 1.8V conversion at 50A, the power dissipation is approximately 21W, requiring adequate thermal management. Compared to IGBTs, the MOSFET offers faster switching and lower losses at high frequencies, making it the preferred choice for DC-DC conversion.
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Motor Control
The STB100N10F7 is well-suited for motor control applications, including brushless DC (BLDC) motors and brushed DC motors. Its high current rating of 100A enables driving motors with high stall currents, while the fast switching speed supports PWM frequencies up to 20 kHz. The device's avalanche energy rating of 400 mJ ensures reliable operation when switching inductive loads, such as motor windings. In a typical BLDC motor driver, three STB100N10F7 devices are used in a three-phase bridge configuration, with gate drivers providing the necessary voltage and current. The low RDS(on) reduces heat generation, allowing for compact heatsink designs. For a 48V, 10A motor, the conduction loss is approximately 0.85W per MOSFET, which is manageable with proper PCB layout. The device's wide operating temperature range (-55°C to +175°C) makes it suitable for automotive and industrial environments.
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Power Supplies
The STB100N10F7 is used in power supply designs, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low RDS(on) and fast switching characteristics make it ideal for the switching stage of SMPS, where efficiency is critical. In a typical 500W SMPS, the STB100N10F7 is used as the main switch in a flyback or forward converter topology. The device's avalanche rating ensures it can handle voltage spikes from the transformer's leakage inductance. The total gate charge of 110 nC allows for efficient gate drive, reducing switching losses. For a 400V DC bus, the 100V VDS rating is sufficient for the primary-side switch, while the high current rating supports the required output power. The D2PAK package provides good thermal performance, enabling operation at high power levels with proper heatsinking.
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Automotive Systems
The STB100N10F7 is designed for automotive applications, including electric power steering (EPS), battery management systems (BMS), and DC-DC converters for electric vehicles. Its high current rating and low RDS(on) make it suitable for high-power switching in these systems. The device's wide operating temperature range (-55°C to +175°C) ensures reliable operation in the harsh automotive environment. In an EPS system, the STB100N10F7 is used in the motor drive circuit, providing efficient control of the steering assist motor. The avalanche rating ensures robustness during load dumps and inductive switching. The device is AEC-Q101 qualified, meeting the stringent reliability requirements of the automotive industry. For a 12V battery system, the 100V VDS rating provides ample margin for voltage transients.
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Battery Management Systems
The STB100N10F7 is used in battery management systems (BMS) for electric vehicles and energy storage systems. It is employed in the charge/discharge path to control the flow of current to and from the battery pack. Its low RDS(on) minimizes power loss, improving overall system efficiency. The high current rating of 100A supports the high currents required for fast charging and discharging. The device's avalanche rating ensures it can handle voltage spikes during switching. In a typical BMS, the STB100N10F7 is used as a load switch, controlled by a battery management IC. The D2PAK package allows for efficient heat dissipation, which is critical in high-current applications. For a 48V, 100A battery system, the conduction loss is approximately 85W, requiring a robust thermal design.
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Industrial Automation
The STB100N10F7 is used in industrial automation equipment, including programmable logic controllers (PLCs), robotics, and factory automation. Its high current rating and fast switching speed make it suitable for driving solenoids, relays, and motors. The device's robustness, including its avalanche rating, ensures reliable operation in industrial environments with high electrical noise. In a typical PLC output module, the STB100N10F7 is used as a high-side switch to control loads such as actuators and indicators. The low RDS(on) reduces heat generation, allowing for compact module designs. The device's wide operating temperature range makes it suitable for use in unheated factory environments. For a 24V, 5A load, the conduction loss is approximately 0.21W, which is negligible.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für STB100N10F7 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | STB100N10F7-1 | IRFB4110 | FDP100N10 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V |
| Continuous Drain Current (ID) at 25°C | 100 A | 100 A | 180 A | 100 A |
| On-State Resistance (RDS(on)) | 8.5 mΩ | 8.5 mΩ | 4.5 mΩ | 8.5 mΩ |
| Total Gate Charge (Qg) | 110 nC | 110 nC | 120 nC | 110 nC |
| Avalanche Energy (EAS) | 400 mJ | 400 mJ | 500 mJ | 400 mJ |
| Operating Temperature Range | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Wichtigste Unterscheidungsmerkmale
- Low on-state resistance of 8.5 mΩ (vs. IRFB4110)
- Avalanche energy rating of 400 mJ (vs. FDP100N10)
- D2PAK package for surface-mount assembly (vs. STB100N10F7-1)
Designhinweise
The STB100N10F7 in D2PAK package has a thermal resistance (theta_JA) of approximately 62°C/W. At 100A and RDS(on) of 8.5 mΩ, the conduction loss is 85W, which would cause a junction temperature rise of 5270°C without proper heatsinking. A heatsink or large copper area (at least 2 square inches) is required for any continuous operation above 10A. Use the exposed pad with multiple vias to the ground plane for effective heat dissipation.
For high-current paths, use wide and short traces to minimize parasitic resistance and inductance. The drain and source traces should be at least 0.5 inches wide for 100A operation. Place the gate driver as close as possible to the gate pin to reduce gate loop inductance. Use a 10Ω gate resistor to dampen ringing and reduce EMI. Ensure the source connection to the ground plane is low-impedance to avoid ground bounce.
Do not exceed the maximum gate-to-source voltage of ±20V, as this can damage the oxide layer. Ensure the gate drive voltage is at least 10V to achieve the specified RDS(on). When switching inductive loads, the avalanche rating of 400 mJ must not be exceeded; use a snubber circuit or freewheeling diode to clamp voltage spikes. Also, be aware of the device's body diode, which has a reverse recovery time that may cause additional losses in synchronous rectification applications.
Compliance-Informationen
RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified for automotive applications.