STL20N60M6 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
MPN: STL20N60M6 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.28 | $228.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for STL20N60M6 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STL20N60M6-1
β Drop-Inπ Reference alternative (not in catalog)
STL20N60M2
β Drop-Inπ Reference alternative (not in catalog)
STL20N60M3
β Drop-Inπ Reference alternative (not in catalog)
IPP60R099CP
β Drop-Inπ Reference alternative (not in catalog)
FCP20N60
β Drop-Inπ Reference alternative (not in catalog)
STL20N60M6 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 20 A |
| Continuous Drain Current (ID) at 100Β°C | 12 A |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance (RDS(on)) typical | 0.19 Ξ© |
| Gate-Source Voltage (VGS) | Β±25 V |
| Gate Threshold Voltage (VGS(th)) | 3 V to 5 V |
| Total Gate Charge (Qg) | 45 nC |
| Input Capacitance (Ciss) | 1900 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Power Dissipation (PD) at 25Β°C | 200 W |
| Operating Junction Temperature (Tj) | -55Β°C to +150Β°C |
| Package | PowerFLAT 8x8 HV |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen Free | Yes |
STL20N60M6 Pin Configuration
| Pin 1 | G β Gate |
| Pin 2 | S β Source |
| Pin 3 | D β Drain |
| Pin 4 | D β Drain |
| Pin 5 | D β Drain |
| Pin 6 | D β Drain |
| Pin 7 | D β Drain |
| Pin 8 | D β Drain |
| Pin 9 | S β Source |
| Pin 10 | S β Source |
| Pin 11 | S β Source |
| Pin 12 | S β Source |
Safe Operating Area
Typical Applications
STL20N60M6 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Solar Inverters, Motor Control, Industrial Power Supplies.
Switch-Mode Power Supplies (SMPS)
The STL20N60M6 is ideal for SMPS due to its low on-resistance and fast switching. In a typical flyback or forward converter, the MOSFET acts as the primary switch, controlling the transfer of energy from the input to the output. The low RDS(on) of 0.19Ξ© minimizes conduction losses, while the low gate charge (45nC) reduces switching losses, enabling high-frequency operation and smaller magnetic components. The 600V breakdown voltage provides ample margin for off-line applications. Proper snubber circuits and gate drive design are essential to minimize ringing and EMI.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STL20N60M6 is used as the boost switch to shape the input current waveform. Its low on-resistance and fast body diode reduce losses in continuous conduction mode (CCM). The device's low reverse recovery charge (Qrr) minimizes switching losses during turn-on. The PowerFLAT 8x8 HV package allows for efficient heat dissipation, which is critical in high-power PFC stages. The 600V rating ensures safe operation in universal input voltage ranges (85-265VAC).
Recommended
LED Lighting Drivers
The STL20N60M6 is well-suited for LED drivers, particularly in offline constant-current topologies. Its high breakdown voltage and low on-resistance enable efficient power conversion from mains voltage to LED current. The fast switching speed allows for compact magnetic designs, reducing the overall size of the driver. The device's thermal performance ensures reliable operation in enclosed luminaires. In a typical buck or flyback LED driver, the MOSFET switches at high frequency, and the low gate charge simplifies the gate drive circuit.
Recommended
Solar Inverters
In solar inverters, the STL20N60M6 is used in DC-DC boost converters and inverter stages. Its low on-resistance reduces conduction losses, improving overall system efficiency. The 600V rating is suitable for photovoltaic panel voltages up to 1000V in some configurations. The fast body diode is beneficial for synchronous rectification and reduces losses in bridge topologies. The device's wide temperature range and robust design make it suitable for outdoor installations.
Recommended
Motor Control
The STL20N60M6 can be used in motor control applications, such as variable frequency drives (VFDs) and brushless DC (BLDC) motor controllers. Its high current rating and low on-resistance allow efficient switching of motor phases. The fast switching speed reduces switching losses, enabling higher PWM frequencies for smoother motor operation. The device's ruggedness ensures reliable operation under inductive load conditions. Proper gate drive and protection circuits are necessary to handle back-EMF and overcurrent conditions.
Recommended
Industrial Power Supplies
The STL20N60M6 is suitable for industrial power supplies requiring high efficiency and reliability. Its low on-resistance and fast switching reduce power losses, improving overall efficiency. The 600V rating provides a safety margin for industrial mains voltages. The PowerFLAT 8x8 HV package allows for compact designs, which is important in space-constrained industrial equipment. The device's wide temperature range and robust construction ensure long-term reliability in harsh environments.
Recommended
Recommended Products Summary
Engineering reference data for STL20N60M6 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STL20N60M6-1 | STL20N60M2 | STL20N60M3 | IPP60R099CP | FCP20N60 |
|---|---|---|---|---|---|---|
| Package | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | PowerFLAT 8x8 HV | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 20 A | 20 A | 20 A | 20 A | 20 A | 20 A |
| On-Resistance (RDS(on)) typical | 0.19 Ξ© | 0.19 Ξ© | 0.25 Ξ© | 0.25 Ξ© | 0.099 Ξ© | 0.19 Ξ© |
| Total Gate Charge (Qg) | 45 nC | 45 nC | 50 nC | 50 nC | 60 nC | 45 nC |
| Power Dissipation (PD) at 25Β°C | 200 W | 200 W | 200 W | 200 W | 200 W | 200 W |
| Operating Junction Temperature (Tj) | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C | -55Β°C to +150Β°C |
Key Differentiators
- Lower on-resistance compared to M2/M3 series (vs STL20N60M2)
- Lower gate charge for faster switching (vs STL20N60M3)
- Same package and pinout as M2/M3 series (vs STL20N60M2)
Design Notes
The STL20N60M6 has a maximum power dissipation of 200W at 25Β°C case temperature. In high-power applications, ensure adequate heat sinking by soldering the exposed pad to a large copper area on the PCB. The thermal resistance from junction to ambient (RthJA) is 62.5Β°C/W, so for a 20W dissipation, the junction temperature rise is 1250Β°C, which is unacceptable. Use a heatsink or forced air cooling to keep the junction temperature below 150Β°C.
For optimal switching performance, place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a low-inductance path for the drain and source connections. Add a gate resistor (typically 10Ξ©) to control switching speed and reduce EMI. Ensure the PCB layout provides a low-impedance path for the high di/dt currents.
Do not exceed the maximum gate-source voltage of Β±25V. Use a gate clamp or zener diode to protect against overvoltage. Also, ensure the drain-source voltage does not exceed 600V, especially during transients. In bridge topologies, the body diode's reverse recovery can cause voltage spikes; consider using a snubber circuit or a MOSFET with a faster body diode.
Compliance Information
RoHS compliant and halogen-free per STMicroelectronics datasheet. Not AEC-Q100 qualified; for automotive, use AEC-Q101 qualified variants.
