TPS22970YZPR - 3.6V 4A 4.7mΩ Load Switch | Texas Instruments
Teilenummer: TPS22970YZPR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.71 | $7,10 |
| 100 | $0.58 | $58,00 |
| 500 | $0.47 | $235,00 |
| 1.000 | $0.39 | $390,00 |
| 3.000 | $0.32 | $960,00 |
TPS22970YZPR Übersicht
What is a load switch? A load switch is a power-management device that uses an internal MOSFET to connect or disconnect a downstream circuit (a "rail" or "load") from an upstream power source. Unlike a DC-DC converter, a load switch does not regulate voltage — its role is gating, inrush control, sequencing, isolation, and reverse-current blocking. Load switches belong to the broader category of power distribution switches (PDswitches), which sit hierarchically below discrete MOSFETs but above simple pass-gate FETs because they integrate control, protection, and timing into a single IC.
Key features of the TPS22970YZPR include a wide input voltage range of 0.65 V to 3.6 V (compatible with 1-cell Li-ion rails as well as 1.0 V/1.2 V/1.8 V/2.5 V/3.3 V logic rails), continuous current up to 2 A and pulsed current up to 4 A, 4.7 mΩ RON that minimizes conduction loss, controlled turn-on to limit inrush current, and an internal discharge path that pulls the output to ground when the switch is disabled. The device operates over -40°C to +105°C and ships on a 0.9 mm pitch WCSP footprint measuring roughly 1.50 mm × 1.50 mm.
Architecturally, the integrated charge pump generates a VGS boost above VIN so the NMOS can fully enhance even at very low input voltages — a non-trivial achievement because a standard NMOS would otherwise struggle to pass sub-1 V rails cleanly. This makes the part especially attractive for ultra-low-voltage core rails in mobile and battery-powered designs.
Typical applications include power gating in smartphones, wearables, SSDs and solid-state storage modules, portable medical devices, and IoT sensor nodes where the load switch isolates a sleeping sub-system from a battery to extend standby life. The output discharge resistor is particularly useful in multi-rail systems where residual charge on a disabled rail could otherwise leak through the body diode of a downstream load.
When designing with this device, pay close attention to the PCB footprint: the WCSP-8 (DSBGA) package requires NSMD pads with precise solder-mask openings and reflow profile matched to JEDEC J-STD-020. Avoid placing vias directly under the balls and follow TI's WCSP layout recommendations.
This page synthesizes distributor pricing from DigiKey and Mouser, drop-in alternatives from TI's load-switch family, and practical design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für TPS22970YZPR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
TPS22970YZPT
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TPS22910AYZPR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TPS22918DBVR
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
TLV627432YFPR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
TPS22916BYZPR
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
TPS22918DBVR-Q1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
TPS22970YZPR Grenzwerte & elektrische Eigenschaften
| Funktion | Load switch (high-side N-channel) |
| Input Voltage Range (VIN) | 0.65 V to 3.6 V |
| Pulsed Switch Current | 4 A |
| On-Resistance (RON) Typical | 4.7 mΩ |
| Output Discharge | Yes (internal pull-down on disable) |
| Betriebstemperaturbereich | -40°C to +105°C |
| Gehäuse | 8-DSBGA (WCSP-8, YZP) |
| Package Dimensions | approximately 1.5 mm × 1.5 mm |
| Ball Pitch | 0.9 mm (WCSP) |
| Montageart | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant |
TPS22970YZPR Pin-Konfiguration
| Pin A1 | VIN — Input voltage (0.65 V – 3.6 V); internal N-channel MOSFET source |
| Pin A2 | VOUT — Switched output voltage; connect to load |
| Pin B1 | VIN — Input voltage (tied to A1 internally for lower RON) |
| Pin B2 | VOUT — Switched output voltage (tied to A2 internally) |
| Pin C1 | ON — Active-high logic enable input |
| Pin C2 | GND — Ground reference |
| Pin D1 | GND — Ground (tied to C2) |
| Pin D2 | GND — Ground (tied to C2 / D1) |
Typische Anwendungen
TPS22970YZPR ist geeignet für 6 Anwendungs: Smartphone Power Rail Gating, Wearable and Hearable Device Battery Isolation, SSD Power Rail Sequencing, IoT Sensor Node Power Multiplexing, Portable Medical Wearable Patch, Industrial Sensor Power Distribution.
Smartphone Power Rail Gating
The TPS22970YZPR's 4.7 mΩ RON, 4 A pulsed capability, and 0.65 V–3.6 V VIN range make it ideal for power-gating sub-systems inside a smartphone PMIC chain, such as a Wi-Fi/Bluetooth island, an audio codec, or a sensor cluster. With its 8-DSBGA footprint of approximately 1.5 mm × 1.5 mm, the part fits next to the downstream IC and saves roughly 60% PCB area versus a discrete N-MOSFET + gate-driver + discharge-resistor implementation. The slew-controlled turn-on suppresses the inrush current that would otherwise collapse a heavily loaded 3.3 V or 1.8 V rail when a sleeping block wakes up. Designers should pair the device with 1 µF X7R input/output ceramic capacitors and follow TI's WCSP NSMD pad guidelines.
Empfohlen
Wearable and Hearable Device Battery Isolation
In a true wireless earbud or a smartwatch, the TPS22970YZPR isolates low-power always-on blocks (BLE radio, IMU, touch controller) from higher-current audio or display subsystems that are off most of the time. Its 4.7 mΩ RON minimizes voltage drop on the always-on rail, preserving battery life at sub-1 µA standby currents, while the 4 A pulsed rating handles the inrush when the audio DAC or haptic driver wakes. The 8-DSBGA package footprint is small enough to fit inside the cramped earbud cavity. The integrated output discharge prevents residual charge from leaking into the audio amplifier when it powers down, eliminating audible pop artifacts.
Empfohlen
SSD Power Rail Sequencing
The TPS22970YZPR's 4 A pulsed current rating handles the bulk-capacitor inrush of an SSD controller and NAND power rail when the host wakes the drive from DevSleep. Its 4.7 mΩ RON keeps the supply droop below 30 mV at 2 A, which is critical for NAND read/write timing margins. The controlled turn-on ramp limits inrush to a level the upstream 3.3 V regulator can supply without sagging, and the internal output discharge ensures that when the SSD powers down, residual charge on VOUT does not back-feed through the controller's I/O pins. Designers should pair the switch with two parallelized 22 µF X5R ceramic capacitors on the output.
Empfohlen
IoT Sensor Node Power Multiplexing
For battery-powered IoT nodes that share a single Li-ion cell across a microcontroller, a LoRa radio, and an environmental sensor, the TPS22970YZPR provides power multiplexing to disconnect the radio between transmissions. Its 0.65 V–3.6 V VIN window handles the full Li-ion discharge curve down to cutoff, and the 4 A pulsed rating tolerates the radio's TX-mode current spikes. The integrated output discharge also makes the part useful for switching between battery and USB-power rails in energy-harvesting sensor nodes, where undefined rail states would otherwise confuse the host MCU's power-good logic.
Empfohlen
Portable Medical Wearable Patch
The TPS22970YZPR's small 8-DSBGA footprint and high efficiency make it suitable for powering sub-circuits in a continuous-glucose-monitor patch or a remote cardiac telemetry device. The 4.7 mΩ RON minimizes IR drop on the 3.0 V silver-oxide battery rail, preserving measurement accuracy, while the integrated discharge path ensures the biosensor interface is fully reset between samples. Operating temperature of -40°C to +105°C supports both cold-chain storage and skin-temperature operation. Designers should add a 1 µF X7R bypass at VIN and another at VOUT, placed within 2 mm of the package.
Empfohlen
Industrial Sensor Power Distribution
In a 24 V industrial sensor module that down-converts to 3.3 V for a microcontroller, the TPS22970YZPR sits on the 3.3 V rail as a service-disconnect switch that a technician can assert via the ON pin to safely swap a sensor head. The 4 A pulsed rating handles inrush from filter capacitor banks on the 3.3 V rail, while the integrated output discharge ensures the rail collapses predictably when disconnected, avoiding latch-up of the downstream MCU. The wide VIN tolerance allows operation directly on the post-DCDC rail without additional regulation.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für TPS22970YZPR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | TPS22970YZPT | TPS22910AYZPR | TPS22918DBVR | TPS22916BYZPR |
|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 8-DSBGA (WCSP-8, YZP) | 8-DSBGA (WCSP-8, YZP) - same | 8-DSBGA (WCSP-8, YZP) - same | SOT-23-5 (DBV) - different | 8-DSBGA (WCSP-8, YZP) - same |
| VIN Range | 0.65 V – 3.6 V | 0.65 V – 3.6 V | 0.75 V – 3.6 V | 1.0 V – 5.5 V | 1.0 V – 5.5 V |
| Pulsed Current | 4 A | 4 A | 2 A continuous | 2 A continuous | 2 A continuous |
| RON (typical) | 4.7 mΩ | 4.7 mΩ | ~25 mΩ | ~15 mΩ | ~15 mΩ |
| Output Discharge | Yes (integrated) | Yes | Optional | Yes | Yes |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C |
| Automotive Qualified | No | No | No | No | Yes (AEC-Q100) |
Wichtigste Unterscheidungsmerkmale
- Pulsed 4 A capability in a sub-1.5 mm WCSP-8 footprint (vs. TPS22910AYZPR)
- Wide sub-1 V VIN operation with integrated output discharge (vs. TPS22918DBVR)
- 4.7 mΩ RON minimizes conduction loss for battery-powered designs (vs. TPS22916BYZPR)
Designhinweise
The TPS22970YZPR uses a WCSP-8 (DSBGA) package with 0.9 mm ball pitch. Per TI's WCSP layout application note, designers MUST use Non-Solder-Mask-Defined (NSMD) pads with the solder-mask opening 0.3 mm larger than the copper pad on each side. Place 1 µF X7R 0402 ceramic bypass capacitors within 2 mm of the VIN and VOUT balls; this minimizes the high-frequency impedance and prevents the load switch from oscillating under fast load transients. Do NOT place vias in the WCSP pad area — vias should be tented with solder mask and offset at least 0.5 mm away from the balls.
Estimated: at VIN = 3.3 V, VOUT = 3.3 V (pass-through), and a 2 A continuous load, conduction loss is I²·R = 2² × 0.0047 = 0.019 W and self-heating is negligible. However at VIN = 3.6 V and a 4 A pulsed transient, the instantaneous dissipation reaches 0.075 W; ensure the 8-DSBGA has at least 10 mm² of unbroken ground copper underneath the GND balls (D1, D2, C2) to sink heat. The DSBGA theta_JA is typically 80–100 C/W on a 1-oz 4-layer board with that copper pour, limiting junction temperature rise to 8 °C at the 4 A pulse condition.
Do NOT drive the ON pin with an open-drain signal without a pull-up — the part has an internal pull-down that defaults the switch OFF, but floating ON will behave unpredictably if the controlling GPIO is in high-Z. The output discharge resistor is enabled by default; if a downstream load requires a high-impedance off-state (e.g., a battery-backed RTC), look at the TPS22970 family variants without discharge or add an external MOSFET in parallel. Lastly, never exceed VIN = 3.6 V — although the part has some transient tolerance per the abs-max table, sustained over-voltage will degrade the charge pump and increase RON.
Compliance-Informationen
RoHS and REACH compliant per TI product page. Not AEC-Q100 qualified; for automotive applications use TPS22918DBVR-Q1 or similar Q1 suffix. Halogen-free per standard TI policy.
