UCC27322DGN/DGNR - 9A Single LS MOSFET Driver w/ Enable | TI
Teilenummer: UCC27322DGN+UCC27322DGNR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.18 | $21,80 |
| 100 | $1.78 | $178,00 |
| 500 | $1.52 | $760,00 |
| 1.000 | $1.31 | $1.310,00 |
UCC27322DGN+UCC27322DGNR Übersicht
A low-side gate driver is a specialized power management IC that translates a low-current logic-level PWM signal from a controller into the high-current gate drive required to switch a power MOSFET or IGBT on the low side of a switching converter. In the broader power-converter hierarchy, gate drivers sit between the controller (PWM, digital, or analog) and the power stage, conditioning timing, level shifting, and providing the brief but large gate-charge currents (often several amps) needed to cross the Miller plateau quickly and minimize switching loss.
Key differentiating features include the TrueDrive hybrid bipolar/CMOS output stage, which combines the current-handling of bipolar transistors with the rail-to-rail swing of CMOS, eliminating the need for an external bootstrap diode on the low side and improving efficiency at high switching frequencies. The split OUTH/OUTL outputs let the designer tune turn-on and turn-off strength independently with separate gate resistors, while the dedicated enable pin supports synchronised start-up and fault management. TTL/CMOS-compatible input thresholds and 4 V UVLO behaviour make the device drop-in compatible with 3.3 V and 5 V digital controllers.
Typical applications include isolated and non-isolated DC-DC converters (synchronous buck, boost, half-bridge drivers via two devices), solar micro-inverters and string inverters, motor-drive gate-driver stages, and Class-D audio amplifiers. The combination of high peak current and tight 20 ns propagation delay also suits high-frequency power designs where switching losses dominate efficiency calculations.
A practical design consideration: route the gate-drive loop (driver OUT to gate to source back to driver GND) as a tight, low-inductance path. Place the IC's thermal pad on at least 1 cm² of copper pour, and keep the OUTH/OUTL traces short to limit ringing. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für UCC27322DGN+UCC27322DGNR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit UCC27322DGN+UCC27322DGNR (gleiche Bauform und Footprint) – abweichend in Package, RoHS Status, Operating Temperature, Output Configuration, Peak Output Current.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
UCC27322DGNR
✅ Drop-In✓ Auf Lager
$0.92 / Stück
Datenblatt ansehen →UCC27322QDGNRQ1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC27321DGN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC27321DGNR
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC37322DGN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
UCC27322DGN+UCC27322DGNR Grenzwerte & elektrische Eigenschaften
| Driver Type | Single-channel low-side MOSFET/IGBT gate driver |
| Number of Channels | 1 |
| Peak Output Current | 9 A source / 9 A sink |
| Ausgangskonfiguration | Split outputs (OUTH/OUTL) for independent turn-on/turn-off |
| Input Voltage (VCC) | 4 V to 15 V |
| UVLO Threshold | 4 V (typ) |
| Input Thresholds | TTL/CMOS compatible |
| Enable-Pin | Yes (active-high) |
| Output Polarity | Non-inverting |
| Anstiegszeit | 20 ns (typ, 1.8 nF load) |
| Abfallzeit | 20 ns (typ, 1.8 nF load) |
| Betriebstemperatur | -40 C to +105 C (DGN); -40 C to +125 C (Q1 variant) |
| Gehäuse | 8-pin HVSSOP PowerPAD (DGN) 3.0 mm x 3.0 mm with exposed thermal pad |
| Montageart | Surface Mount |
| Output Architecture | TrueDrive bipolar/CMOS hybrid |
| RoHS-Status | Compliant |
UCC27322DGN+UCC27322DGNR Pin-Konfiguration
| Pin 1 | NC — Not connected (per datasheet) |
| Pin 2 | IN — Logic input (TTL/CMOS, non-inverting) |
| Pin 3 | EN — Active-high enable (high = outputs active) |
| Pin 4 | GND — Ground reference |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | OUTH — Output high-side driver (turn-on path) |
| Pin 7 | OUTL — Output low-side driver (turn-off path) |
| Pin 8 | VCC — Supply voltage (4 V to 15 V) |
| Pin EP | Thermal Pad — Exposed thermal pad, tie to GND |
Typische Anwendungen
UCC27322DGN+UCC27322DGNR ist geeignet für 6 Anwendungs: Synchronous Buck DC-DC Converter, Solar Micro-Inverter / String Inverter, BLDC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, Isolated DC-DC Converter Primary-Side Switch, Power Tool and Battery-Pack Drive.
Synchronous Buck DC-DC Converter
The UCC27322DGN fits synchronous buck converters as the low-side gate driver for the synchronous-rectifier MOSFET. Its 9 A peak sink current pulls the synchronous-FET gate low in ~20 ns, eliminating body-diode conduction and minimising dead-time loss. The 4-15 V VCC range accepts a 5 V or 12 V bias, and the enable pin lets the controller disable switching during fault or light-load burst-mode. The HVSSOP-EP package dissipates the ~0.5 W gate-charge loss with a single square inch of copper pour.
Empfohlen
Solar Micro-Inverter / String Inverter
In a solar micro-inverter the UCC27322DGN drives the low-side IGBTs or MOSFETs of the full-bridge DC-AC stage. The 9 A peak source current charges large IGBT gates quickly enough to keep switching loss below 1% even at 50 kHz PWM. The TrueDrive bipolar/CMOS output stage maintains current through the Miller plateau where standard CMOS drivers would fold back. The active-high enable allows the MPPT controller to shut down cleanly on grid-loss anti-islanding events.
BLDC Motor Drive Half-Bridge
Two UCC27322DGN drivers per phase form the low-side half of a 3-phase BLDC motor drive, each driving the low-side N-channel MOSFET with 9 A peak to slew 50-100 nC of gate charge in under 25 ns. The split OUTH/OUTL pins let the designer add a small turn-on resistor and a Schottky-clamped turn-off resistor for asymmetric dV/dt control, suppressing ringing on long motor leads. The -40 to +105 C rating covers industrial motor environments.
Empfohlen
Class-D Audio Amplifier Output Stage
The UCC27322DGN drives the output MOSFETs of a Class-D audio amplifier where its 20 ns rise/fall time and 9 A peak current keep PWM transition loss below 0.5 W per phase at 400 kHz switching frequency. The TrueDrive architecture produces clean 0-12 V gate swings that minimise output-stage dead-time and the resulting THD+N. The HVSSOP-EP PowerPAD lands directly on the amplifier PCB copper pour for compact, fan-less designs.
Empfohlen
Isolated DC-DC Converter Primary-Side Switch
For the primary-side low-side switch of an isolated flyback or forward converter, the UCC27322DGN accepts the PWM signal from a digital isolator's output and provides the 9 A gate-charge current needed by a 600 V or 1200 V power MOSFET. The 4 V UVLO guarantees clean start-up sequencing. The exposed thermal pad dissipates the ~1 W of gate-drive loss with PCB copper alone, eliminating a heatsink.
Power Tool and Battery-Pack Drive
In cordless power tools the UCC27322DGN drives the low-side FET of a 18 V to 48 V battery-fed half-bridge, switching the motor at up to 100 kHz with 9 A peak gate current for fast transitions. The active-high enable pin interfaces directly with the tool's MCU for soft-start, current limit, and thermal fold-back. The wide 4-15 V VCC range accepts the tool's regulated 12 V gate-drive rail directly.
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für UCC27322DGN+UCC27322DGNR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | UCC27322DGNR | UCC27322QDGNRQ1 | UCC27321DGN | UCC27321DGNR | UCC37322DGN |
|---|---|---|---|---|---|---|
| Package | HVSSOP-8 (DGN) PowerPAD | HVSSOP-8 (DGN) PowerPAD - same | HVSSOP-8 (DGN) PowerPAD - same | HVSSOP-8 (DGN) PowerPAD - same | HVSSOP-8 (DGN) PowerPAD - same | HVSSOP-8 (DGN) PowerPAD - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Peak Output Current | 9 A source / 9 A sink | 9 A / 9 A | 9 A / 9 A | 9 A / 9 A | 9 A / 9 A | 9 A / 9 A |
| Input VCC Range | 4 V to 15 V | 4 V to 15 V | 4 V to 15 V | 4 V to 15 V | 4 V to 15 V | 4 V to 15 V |
| Enable Pin | Yes (active-high) | Yes (active-high) | Yes (active-high) | No | No | No |
| Operating Temperature | -40 C to +105 C | -40 C to +105 C | -40 C to +125 C | -40 C to +105 C | -40 C to +105 C | -40 C to +105 C |
| AEC-Q100 Qualified | No | No | Yes | No | No | No |
| Packaging | Tube (DGN) | Tape & Reel (DGNR) | Tape & Reel | Tube | Tape & Reel | Tube |
Wichtigste Unterscheidungsmerkmale
- 9 A peak drive is highest in the UCC2732x/UCC3732x family (vs. UCC27517DBVR)
- Split OUTH/OUTL outputs enable independent turn-on/turn-off tuning (vs. UCC37322DGN)
- Active-high enable for sequenced start-up (vs. UCC27321DGN)
- Automotive-grade option available (vs. UCC27322DGN)
Designhinweise
Keep the high-current gate-drive loop (driver OUT -> series gate resistor -> MOSFET gate -> MOSFET source -> driver GND) as compact as possible. The peak 9 A drive into a few hundred pF of stray inductance can ring at hundreds of MHz and produce radiated EMI or overshoot that exceeds the MOSFET VGS rating. Place the series gate resistor within 5 mm of the driver OUT pin, and use a 4-layer PCB with a solid ground plane directly under the driver for the return path. The exposed thermal pad must be soldered to a copper pour of at least 1 cm^2 on the top layer, with multiple thermal vias to inner ground planes.
Estimated: gate-drive loss for the UCC27322DGN in a typical 100 kHz, 1.8 nF effective gate-load application is roughly P = Qg x Vgs x fsw = 1.8 nC x 12 V x 100 kHz = 2.2 mW, which is negligible. Power dissipation only rises meaningfully at multi-MHz switching or with very large IGBTs (Qg > 100 nC). Even at 1 MHz with 1.8 nF load the loss is ~22 mW. The HVSSOP-EP package's theta_JA of approximately 50 C/W on a standard JEDEC test board means the junction will rise only ~1-2 C above ambient under realistic gate-drive duty cycles; no heatsink is required.
The split OUTH/OUTL outputs allow independent turn-on and turn-off gate resistors. A typical design uses R_on of 0-10 ohm (to limit dV/dt and ringing) and R_off of 0-5 ohm (to keep dead-time short and minimise body-diode conduction). If you don't need the split feature, tie OUTH and OUTL together at the IC pin with a single resistor to the gate. Keep the VCC bypass capacitor (1 uF ceramic minimum, 10 uF recommended) within 3 mm of pin 8, with a 0.1 uF HF decoupler in parallel.
Do not leave the EN pin floating. The UCC27322's enable pin has an internal pull-up (per TI UCC27322 datasheet) so it defaults to enabled when left open, but external noise can falsely disable the driver on long PCB traces. Always tie EN directly to VCC or drive it actively from the controller. Also avoid tying OUTH/OUTL to the gate of a 600 V+ MOSFET through long traces, as the high dV/dt can inject common-mode currents into the logic input and cause double-pulsing.
Compliance-Informationen
RoHS and lead-free compliant per TI product page. Standard UCC27322DGN is not AEC-Q100 qualified - choose UCC27322QDGNRQ1 for automotive.
