ZXMHC6A07N8TC - 60V Complementary H-Bridge MOSFET | Diodes Inc
Teilenummer: ZXMHC6A07N8TC ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.78 | $0,78 |
| 10 | $0.71 | $7,10 |
| 100 | $0.58 | $58,00 |
| 500 | $0.49 | $245,00 |
| 1.000 | $0.43 | $430,00 |
| 2.500 | $0.39 | $975,00 |
ZXMHC6A07N8TC Übersicht
A MOSFET H-bridge is a four-switch topology used to drive bidirectional current through a load (typically a DC motor, solenoid, or piezo element) by selectively activating diagonal pairs of N and P-channel devices. The complementary N+P architecture inside one package eliminates the need for external charge-pump or level-shift circuitry, simplifying PCB layout and reducing BOM count compared with discrete all-N-channel H-bridges that require a high-side bootstrap driver. H-bridge arrays sit at the lowest tier of the power semiconductor family, which itself belongs to the broader discrete semiconductor category.
Key features include low on-resistance achievable with low gate-drive voltage (logic-level compatible at VGS=10V), monolithic die construction that minimizes parasitic inductance between the half-bridges, and a thermally enhanced SO-8 footprint with exposed center pad. The asymmetric N/P ratings (slightly higher RDS(on) on the P-channel) reflect typical silicon area trade-offs in complementary processes, and are well matched for the symmetric switching patterns of H-bridge operation. The device is also characterized for fast switching transitions, which reduces dead-time losses in PWM motor control.
The architecture uses Diodes Incorporated's latest-generation TrenchMOS process, which achieves the low figure-of-merit (RDS(on) x Qg) needed for sub-1 ohm complementary switches in a small outline package. Internal source connections are bonded out individually on the package pins, allowing the four MOSFETs to be used either as a complete H-bridge or as two independent half-bridges for buck/boost converter legs. This dual-use flexibility is a notable advantage over H-bridges predriver/only ICs that lock the user into a fixed topology.
Typical applications include DC motor driver H-bridges in low-voltage appliances, DC-AC inverters for LED backlighting and piezo buzzers, solenoid and valve drivers in industrial controls, and battery-powered robotic actuators. The 60V rating comfortably covers 12V and 24V industrial bus rails with substantial transient headroom.
When designing with this device, ensure the gate-drive timing accounts for the slower P-channel turn-off (typical of PMOS in H-bridges) and provide adequate dead-time in PWM firmware to prevent cross-conduction. Place a low-ESR ceramic bypass capacitor directly at the package to suppress the VDS ringing that arises from the package lead inductance.
This page synthesizes distributor pricing, drop-in alternatives, parametric comparison, and practical H-bridge design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für ZXMHC6A07N8TC – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
ZXMHC6A07T8TA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ZXMHC3F01N8TA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ZXMHC6A07N8TA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
DMC6040SSD-13
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
ZXMHC6A07N8TC Grenzwerte & elektrische Eigenschaften
| FET Type | 2 N-Channel and 2 P-Channel (H-Bridge) |
| Drain-to-Source Voltage (N-Ch) V(BR)DSS | 60 V |
| Drain-to-Source Voltage (P-Ch) V(BR)DSS | -60 V |
| Continuous Drain Current (N-Ch) ID @ 25C | 1.8 A |
| Continuous Drain Current (P-Ch) ID @ 25C | 1.4 A |
| Dual Configuration Continuous Drain (N-Ch) | 1.39 A |
| Dual Configuration Continuous Drain (P-Ch) | 1.28 A |
| RDS(on) Max @ VGS=10V (N-Ch) | 0.25 ohm |
| RDS(on) Max @ VGS=-10V (P-Ch) | 0.40 ohm |
| Total Package Power Dissipation | 870 mW |
| Betriebstemperaturbereich | -55C to +150C (junction) |
| Package Type | 8-SO (SOIC-8) |
| Montageart | Surface Mount |
| MSL-Level | 1 |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
ZXMHC6A07N8TC Pin-Konfiguration
| Pin 1 | S1 — Source 1 - N-channel MOSFET 1 source |
| Pin 2 | G1 — Gate 1 - N-channel MOSFET 1 gate |
| Pin 3 | S2 — Source 2 - N-channel MOSFET 2 source |
| Pin 4 | G2 — Gate 2 - N-channel MOSFET 2 gate |
| Pin 5 | D2 — Drain 2 - P-channel MOSFET 2 drain |
| Pin 6 | G3 — Gate 3 - P-channel MOSFET 3 gate |
| Pin 7 | D3 — Drain 3 - P-channel MOSFET 3 drain |
| Pin 8 | S3 — Source 3 - P-channel MOSFET 3 source |
Typische Anwendungen
ZXMHC6A07N8TC ist geeignet für 6 Anwendungs: 12V/24V DC Motor Driver H-Bridge, Solenoid and Valve Driver, DC-AC Inverter for LED Backlighting, Battery-Powered Robotic Actuator, Piezo Buzzer Driver, Low-Voltage Fan Speed Controller.
12V/24V DC Motor Driver H-Bridge
The ZXMHC6A07N8TC is purpose-built for low-voltage DC motor H-bridge drivers. Its complementary N+P topology eliminates the external charge-pump or bootstrap circuit needed by all-N-channel bridges, reducing BOM count by 4-6 components. The 60V V(BR)DSS comfortably covers 12V and 24V industrial bus rails with 2.5x-5x headroom for motor back-EMF transients at commutation. RDS(on) of 0.25 ohm (N-Ch) at VGS=10V keeps conduction losses under 0.5W per leg at 1A, allowing fan-cooled designs without a heatsink up to roughly 1.5A continuous. For typical PWM frequencies of 20-50 kHz the part's switching losses remain negligible compared to conduction losses. Place the device near the motor connector to minimize the high-frequency switching loop area and reduce radiated EMI.
Empfohlen
Solenoid and Valve Driver
Industrial solenoid valves, latching relays, and pneumatic actuators benefit from the ZXMHC6A07N8TC's bidirectional drive capability in a single SO-8 footprint. The H-bridge topology allows direct reversing of a solenoid without external H-bridge driver ICs like the L293D, freeing board area and reducing cost by 30-40% in high-volume designs. The 60V breakdown rating handles the inductive kick from 24V solenoids (which can spike to 60-80V) if a flyback path is provided. The 1.4A P-channel rating is well matched to typical 0.5-1A solenoid holding currents. Use a software-controlled soft-start to limit inrush current when the solenoid is engaged, and add a TVS across the supply for additional transient suppression.
Empfohlen
DC-AC Inverter for LED Backlighting
The ZXMHC6A07N8TC is well matched to low-power DC-AC conversion for piezo-element buzzers, small EL lamp drivers, and LED matrix backlight inverters operating below 60V peak. The complementary pair can be configured as a half-bridge with the load returned to a center-tapped transformer, generating a square-wave AC output suitable for driving piezo sounders at 1-4 kHz. The 1.8A N-channel current rating supports LED backlight currents up to 1A per channel in matrix configurations. The monolithic SO-8 construction minimizes the switching loop inductance that causes ringing in discrete H-bridges, reducing the need for snubber components and improving EMC compliance.
Empfohlen
Battery-Powered Robotic Actuator
For hobby robotics, small drone gimbal motors, and battery-powered actuator modules running from 2S-6S Li-ion packs (7.4V-22.2V nominal), the ZXMHC6A07N8TC provides a compact bidirectional drive in a footprint smaller than a postage stamp. The 60V rating covers 6S Li-ion fully charged at 25.2V with >2x headroom for regenerative braking spikes. Logic-level gate drive at VGS=10V is compatible with 3.3V MCU outputs via a simple gate-driver charge pump. The 870mW package dissipation supports continuous currents up to approximately 0.7A without a heatsink in still air, ideal for peak-duty-cycle robotic joints where average dissipation is well below the maximum.
Empfohlen
Piezo Buzzer Driver
Piezo buzzers used in industrial alarms, medical devices, and IoT notification appliances require a 100-300 VAC drive signal at 1-4 kHz to produce audible sound. The ZXMHC6A07N8TC's complementary half-bridge can drive a small step-up transformer to generate these high-voltage AC levels from a 3.3V or 5V supply. The 60V V(BR)DSS rating limits this topology to buzzers requiring less than approximately 30Vp-p drive, which covers the majority of small SMD piezo elements. The monolithic SO-8 construction keeps the two switching devices in close proximity, minimizing dead-time variation between the N and P transitions and producing a cleaner AC waveform with lower harmonic distortion.
Empfohlen
Low-Voltage Fan Speed Controller
Brushless DC (BLDC) fans used in networking equipment, telecom hardware, and server chassis often include a simple reverse-rotation or speed-tap circuit that can be implemented with a ZXMHC6A07N8TC H-bridge. The 60V rating covers 48V PoE rails commonly found in IP phones and small switches. The complementary pair can be wired as a synchronous buck leg to provide efficient PWM speed control of a 12V or 24V fan, with the P-channel handling the high-side switch and the N-channel handling the low-side. The 1.4A continuous P-channel rating supports fans up to approximately 0.8A continuous, covering the majority of 40-80mm fans used in networking and industrial applications.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für ZXMHC6A07N8TC – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | ZXMHC6A07T8TA | ZXMHC3F01N8TA | ZXMHC6A07N8TA | DMC6040SSD-13 |
|---|---|---|---|---|---|
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Package | SO-8 (8-SO) | SO-8 EP | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same |
| V(BR)DSS N-Ch (V) | 60 | 60 | 30 | 60 | 40 |
| V(BR)DSS P-Ch (V) | -60 | -60 | -30 | -60 | -40 |
| Continuous Drain Current N-Ch (A) | 1.8 | 1.8 | 2.0 | 1.8 | 1.6 |
| Continuous Drain Current P-Ch (A) | 1.4 | 1.4 | 1.6 | 1.4 | 1.2 |
| RDS(on) Max N-Ch @ VGS=10V (ohm) | 0.25 | 0.25 | 0.18 | 0.25 | 0.30 |
| RDS(on) Max P-Ch @ VGS=-10V (ohm) | 0.40 | 0.40 | 0.32 | 0.40 | 0.50 |
| Total Package Power Dissipation (mW) | 870 | 1300 (with EP) | 870 | 870 | 780 |
| Unit Price @ 1000 pcs (USD) | 0.43 | 0.51 | 0.39 | 0.43 | 0.47 |
Wichtigste Unterscheidungsmerkmale
- Complementary N+P in single SO-8 (vs. Discrete all-N-channel H-bridge (e.g., 2x DMG3415U-7))
- 60V rating covers 24V industrial bus (vs. ZXMHC3F01N8TA (30V/-30V ratings))
- Low RDS(on) at logic-level gate drive (vs. DMC6040SSD-13 (0.30 ohm N-Ch))
Designhinweise
At continuous 1.4A per P-channel with VIN=24V and average switching duty cycle of 50%, the ZXMHC6A07N8TC dissipates approximately 1.4W in the SO-8 package (theta-JA ~150C/W on a 1oz 1sqin copper pad). This drives the junction temperature ~210C above ambient - well beyond the 150C maximum. Either reduce continuous current to ~0.7A, switch to the ZXMHC6A07T8TA exposed-pad variant (theta-JA ~80C/W), or add a small SOT-23 footprint copper heatsink. Estimated calculation: P = I^2 * RDS(on) = 1.4^2 * 0.40 = 0.78W per leg x 2 active legs ~ 1.5W total.
Place input and output bulk capacitors within 5mm of the SO-8 package to minimize the high-frequency switching loop area. The complementary N+P topology requires a low-impedance ground return - use a continuous ground plane on layer 2 with at least 4 vias stamped, allowing via stitching around the SO-8 thermal pad. Keep gate-drive traces short (under 10mm) and route them away from the drain switching node to minimize capacitive coupling that can cause shoot-through. If using a center-tapped transformer load, place the transformer within 15mm of the package to limit radiated EMI from the switching loop.
Do not exceed 60V VDS - inductive loads (motive, solenoids) can generate kick-back transients well above the supply rail. Add a TVS diode or flyback path rated above the supply but below 60V. The P-channel gate must be driven to VDD or below for full enhancement - leaving it floating or at mid-rail will cause partial turn-on with high RDS(on). Always include dead-time in firmware (1-2us minimum) to prevent cross-conduction when transitioning between forward and reverse modes. Finally, the dual N-channel sources (pins 1 and 3) and dual P-channel drains (pins 5 and 7) are NOT internally connected - the PCB must wire them together if the part is used as a single H-bridge.
Compliance-Informationen
RoHS and lead-free confirmed by Diodes Incorporated product page. Halogen-free status not explicitly stated in verified data. Not AEC-Q100 qualified - for automotive H-bridge applications consider AEC-Q100 qualified alternatives.
