Diodes Incorporated

ZXMHC6A07N8TC - 60V Complementary H-Bridge MOSFET | Diodes Inc

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60 V Vdss 1.8 A Id 0.25 ohm Rds(on) 870 mW Package
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Price updated: 2026-10-11
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Qty Unit Price Extended
1 $0.78 $0.78
10 $0.71 $7.10
100 $0.58 $58.00
500 $0.49 $245.00
1,000 $0.43 $430.00
2,500 $0.39 $975.00
ℹ️ All prices are in USD

ZXMHC6A07N8TC Overview

The Diodes Incorporated ZXMHC6A07N8TC is a 60V complementary enhancement-mode MOSFET H-bridge array integrating two N-channel and two P-channel MOSFETs in a single SO-8 (8-SO) surface-mount package. The N-channel pair is rated to 60V V(BR)DSS with 1.8A continuous drain current (1.39A per device in the dual configuration) and 0.25 ohm RDS(on) at VGS=10V, while the P-channel pair is rated to -60V with 1.4A continuous drain current (1.28A per device) and 0.40 ohm RDS(on) at VGS=-10V. Total package power dissipation is 870mW.

A MOSFET H-bridge is a four-switch topology used to drive bidirectional current through a load (typically a DC motor, solenoid, or piezo element) by selectively activating diagonal pairs of N and P-channel devices. The complementary N+P architecture inside one package eliminates the need for external charge-pump or level-shift circuitry, simplifying PCB layout and reducing BOM count compared with discrete all-N-channel H-bridges that require a high-side bootstrap driver. H-bridge arrays sit at the lowest tier of the power semiconductor family, which itself belongs to the broader discrete semiconductor category.

Key features include low on-resistance achievable with low gate-drive voltage (logic-level compatible at VGS=10V), monolithic die construction that minimizes parasitic inductance between the half-bridges, and a thermally enhanced SO-8 footprint with exposed center pad. The asymmetric N/P ratings (slightly higher RDS(on) on the P-channel) reflect typical silicon area trade-offs in complementary processes, and are well matched for the symmetric switching patterns of H-bridge operation. The device is also characterized for fast switching transitions, which reduces dead-time losses in PWM motor control.

The architecture uses Diodes Incorporated's latest-generation TrenchMOS process, which achieves the low figure-of-merit (RDS(on) x Qg) needed for sub-1 ohm complementary switches in a small outline package. Internal source connections are bonded out individually on the package pins, allowing the four MOSFETs to be used either as a complete H-bridge or as two independent half-bridges for buck/boost converter legs. This dual-use flexibility is a notable advantage over H-bridges predriver/only ICs that lock the user into a fixed topology.

Typical applications include DC motor driver H-bridges in low-voltage appliances, DC-AC inverters for LED backlighting and piezo buzzers, solenoid and valve drivers in industrial controls, and battery-powered robotic actuators. The 60V rating comfortably covers 12V and 24V industrial bus rails with substantial transient headroom.

When designing with this device, ensure the gate-drive timing accounts for the slower P-channel turn-off (typical of PMOS in H-bridges) and provide adequate dead-time in PWM firmware to prevent cross-conduction. Place a low-ESR ceramic bypass capacitor directly at the package to suppress the VDS ringing that arises from the package lead inductance.

This page synthesizes distributor pricing, drop-in alternatives, parametric comparison, and practical H-bridge design notes not found in the manufacturer datasheet alone.

Drop-in alternatives for ZXMHC6A07N8TC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

ZXMHC6A07T8TA

✅ Drop-In
📦 SO-8 EP (8-SOIC-EP)
same die, same 60V/-60V ratings, exposed thermal pad improves PD by ~30% (vs 870 mW)

📋 Reference alternative (not in catalog)

ZXMHC3F01N8TA

✅ Drop-In
📦 SO-8 (8-SO)
30V/-30V ratings (50% lower V(BR)DSS), same SO-8 pinout, lower RDS(on) for sub-12V designs

📋 Reference alternative (not in catalog)

ZXMHC6A07N8TA

✅ Drop-In
📦 SO-8 (8-SO)
same die/package, alternative reel code (TA vs TC)

📋 Reference alternative (not in catalog)

DMC6040SSD-13

✅ Drop-In
📦 SO-8 (8-SO)
40V/-40V ratings (33% lower V(BR)DSS), complementary H-bridge topology, pin-compatible SO-8

📋 Reference alternative (not in catalog)

ZXMHC6A07N8TC Maximum Ratings & Electrical Characteristics

FET Type 2 N-Channel and 2 P-Channel (H-Bridge)
Drain-to-Source Voltage (N-Ch) V(BR)DSS 60 V
Drain-to-Source Voltage (P-Ch) V(BR)DSS -60 V
Continuous Drain Current (N-Ch) ID @ 25C 1.8 A
Continuous Drain Current (P-Ch) ID @ 25C 1.4 A
Dual Configuration Continuous Drain (N-Ch) 1.39 A
Dual Configuration Continuous Drain (P-Ch) 1.28 A
RDS(on) Max @ VGS=10V (N-Ch) 0.25 ohm
RDS(on) Max @ VGS=-10V (P-Ch) 0.40 ohm
Total Package Power Dissipation 870 mW
Operating Temperature Range -55C to +150C (junction)
Package Type 8-SO (SOIC-8)
Mounting Type Surface Mount
MSL Level 1
RoHS Status Compliant
Lead-Free Yes

ZXMHC6A07N8TC Pin Configuration

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
Pin 1 S1 — Source 1 - N-channel MOSFET 1 source
Pin 2 G1 — Gate 1 - N-channel MOSFET 1 gate
Pin 3 S2 — Source 2 - N-channel MOSFET 2 source
Pin 4 G2 — Gate 2 - N-channel MOSFET 2 gate
Pin 5 D2 — Drain 2 - P-channel MOSFET 2 drain
Pin 6 G3 — Gate 3 - P-channel MOSFET 3 gate
Pin 7 D3 — Drain 3 - P-channel MOSFET 3 drain
Pin 8 S3 — Source 3 - P-channel MOSFET 3 source

Typical Applications

ZXMHC6A07N8TC is suitable for 6 applications: 12V/24V DC Motor Driver H-Bridge, Solenoid and Valve Driver, DC-AC Inverter for LED Backlighting, Battery-Powered Robotic Actuator, Piezo Buzzer Driver, Low-Voltage Fan Speed Controller.

🏭

12V/24V DC Motor Driver H-Bridge

The ZXMHC6A07N8TC is purpose-built for low-voltage DC motor H-bridge drivers. Its complementary N+P topology eliminates the external charge-pump or bootstrap circuit needed by all-N-channel bridges, reducing BOM count by 4-6 components. The 60V V(BR)DSS comfortably covers 12V and 24V industrial bus rails with 2.5x-5x headroom for motor back-EMF transients at commutation. RDS(on) of 0.25 ohm (N-Ch) at VGS=10V keeps conduction losses under 0.5W per leg at 1A, allowing fan-cooled designs without a heatsink up to roughly 1.5A continuous. For typical PWM frequencies of 20-50 kHz the part's switching losses remain negligible compared to conduction losses. Place the device near the motor connector to minimize the high-frequency switching loop area and reduce radiated EMI.

🏭

Solenoid and Valve Driver

Industrial solenoid valves, latching relays, and pneumatic actuators benefit from the ZXMHC6A07N8TC's bidirectional drive capability in a single SO-8 footprint. The H-bridge topology allows direct reversing of a solenoid without external H-bridge driver ICs like the L293D, freeing board area and reducing cost by 30-40% in high-volume designs. The 60V breakdown rating handles the inductive kick from 24V solenoids (which can spike to 60-80V) if a flyback path is provided. The 1.4A P-channel rating is well matched to typical 0.5-1A solenoid holding currents. Use a software-controlled soft-start to limit inrush current when the solenoid is engaged, and add a TVS across the supply for additional transient suppression.

💡

DC-AC Inverter for LED Backlighting

The ZXMHC6A07N8TC is well matched to low-power DC-AC conversion for piezo-element buzzers, small EL lamp drivers, and LED matrix backlight inverters operating below 60V peak. The complementary pair can be configured as a half-bridge with the load returned to a center-tapped transformer, generating a square-wave AC output suitable for driving piezo sounders at 1-4 kHz. The 1.8A N-channel current rating supports LED backlight currents up to 1A per channel in matrix configurations. The monolithic SO-8 construction minimizes the switching loop inductance that causes ringing in discrete H-bridges, reducing the need for snubber components and improving EMC compliance.

✈️

Battery-Powered Robotic Actuator

For hobby robotics, small drone gimbal motors, and battery-powered actuator modules running from 2S-6S Li-ion packs (7.4V-22.2V nominal), the ZXMHC6A07N8TC provides a compact bidirectional drive in a footprint smaller than a postage stamp. The 60V rating covers 6S Li-ion fully charged at 25.2V with >2x headroom for regenerative braking spikes. Logic-level gate drive at VGS=10V is compatible with 3.3V MCU outputs via a simple gate-driver charge pump. The 870mW package dissipation supports continuous currents up to approximately 0.7A without a heatsink in still air, ideal for peak-duty-cycle robotic joints where average dissipation is well below the maximum.

🔧

Piezo Buzzer Driver

Piezo buzzers used in industrial alarms, medical devices, and IoT notification appliances require a 100-300 VAC drive signal at 1-4 kHz to produce audible sound. The ZXMHC6A07N8TC's complementary half-bridge can drive a small step-up transformer to generate these high-voltage AC levels from a 3.3V or 5V supply. The 60V V(BR)DSS rating limits this topology to buzzers requiring less than approximately 30Vp-p drive, which covers the majority of small SMD piezo elements. The monolithic SO-8 construction keeps the two switching devices in close proximity, minimizing dead-time variation between the N and P transitions and producing a cleaner AC waveform with lower harmonic distortion.

🌐

Low-Voltage Fan Speed Controller

Brushless DC (BLDC) fans used in networking equipment, telecom hardware, and server chassis often include a simple reverse-rotation or speed-tap circuit that can be implemented with a ZXMHC6A07N8TC H-bridge. The 60V rating covers 48V PoE rails commonly found in IP phones and small switches. The complementary pair can be wired as a synchronous buck leg to provide efficient PWM speed control of a 12V or 24V fan, with the P-channel handling the high-side switch and the N-channel handling the low-side. The 1.4A continuous P-channel rating supports fans up to approximately 0.8A continuous, covering the majority of 40-80mm fans used in networking and industrial applications.

What is the ZXMHC6A07N8TC?
The ZXMHC6A07N8TC is a 60V complementary enhancement-mode MOSFET H-bridge array from Diodes Incorporated, integrating two N-channel (60V, 1.8A, 0.25 ohm) and two P-channel (-60V, 1.4A, 0.40 ohm) MOSFETs in a single SO-8 package. According to the Diodes Incorporated datasheet, it is designed for low on-resistance with logic-level gate drive and is part of the ZXMH series targeted at DC motor control and DC-AC inverter applications.
What is the maximum drain-to-source voltage of ZXMHC6A07N8TC?
The N-channel V(BR)DSS is rated at 60V and the P-channel V(BR)DSS is rated at -60V. This 60V symmetrical rating gives the device substantial headroom above 12V and 24V industrial bus rails. The datasheet indicates these are absolute maximum ratings at TJ=25C and must be derated for elevated junction temperatures in continuous operation.
How much continuous drain current can ZXMHC6A07N8TC handle?
The N-channel devices can carry 1.8A continuous drain current at TA=25C, and the P-channel devices can carry 1.4A continuous, both per individual MOSFET. In the dual configuration used for H-bridge operation, this becomes 1.39A and 1.28A respectively due to package thermal limitations, as listed on the DigiKey product page (DigiKey p/n 2095661).
What is the on-resistance of ZXMHC6A07N8TC?
RDS(on) is 0.25 ohm maximum for the N-channel at VGS=10V, and 0.40 ohm maximum for the P-channel at VGS=-10V. These figures are sourced from the Diodes Incorporated datasheet typical characteristics. Lower RDS(on) reduces conduction losses and improves efficiency, making the part competitive with discrete solutions in low-voltage H-bridge designs.
Where can I buy ZXMHC6A07N8TC and what is the price?
As of 2026-10-11, the ZXMHC6A07N8TC is in stock at DigiKey (p/n 2095661) and Mouser, with the LCSC listing showing pricing from $0.4344 per unit. Distributor pricing scales down to roughly $0.39 at 2500-piece quantities, making it one of the most economical complementary H-bridge MOSFET arrays on the market for high-volume consumer and industrial designs.
What is the lead time for ZXMHC6A07N8TC?
As of 2026-10-11, DigiKey lists the ZXMHC6A07N8TC as ships-today with no factory lead time, and Mouser shows immediate inventory. The part is in active production at Diodes Incorporated with no PCN or EOL notice issued. For large-volume OEM contracts beyond 50k units, contact Diodes Incorporated franchised distributors directly for scheduled deliveries.
Is ZXMHC6A07N8TC in stock right now?
Yes, the ZXMHC6A07N8TC is confirmed in stock at DigiKey as of 2026-10-11 (ships today per listing 2095661), and is also available from Mouser and LCSC Electronics. Multi-distributor comparison via Octopart confirms stock at 9 distributors globally. Current pricing starts at $0.4344 per unit on the LCSC listing (C460274).
ZXMHC6A07N8TC vs ZXMHC3F01N8 - which is better for a 12V DC motor driver?
The ZXMHC6A07N8TC is the better choice for a 12V DC motor driver because its 60V V(BR)DSS provides 5x the transient headroom of the ZXMHC3F01N8 (30V). Both share the same SO-8 footprint, so PCB layout is reusable. Choose ZXMHC6A07N8TC for 12V and 24V bus applications; choose ZXMHC3F01N8 only for sub-12V USB or battery-powered designs where lower RDS(on) at low VGS is beneficial.
What is the difference between ZXMHC6A07N8TC and ZXMHC6A07T8TA?
The ZXMHC6A07N8TC ships in SO-8 (narrow body, 8-SO) on tape-and-reel packaging, while the ZXMHC6A07T8TA uses the wider SO-8 EP package with a center exposed pad for improved thermal dissipation. Both share the same 60V/1.8A N-channel and -60V/1.4A P-channel die. Choose the T8TA variant when continuous 1.8A operation exceeds the 870mW package dissipation limit of the N8 package.
When should I choose ZXMHC6A07N8TC over a discrete all-N-channel H-bridge?
Choose the ZXMHC6A07N8TC when you need a simple, low-BOM bidirectional motor or solenoid driver and your supply rail is under 30V. The internal complementary topology eliminates the external charge-pump or bootstrap high-side drive circuitry required by all-N-channel bridges. For higher voltage (>30V) or higher current (>2A) applications, choose a discrete all-N-channel solution with a dedicated gate driver IC for better efficiency.
Is ZXMHC6A07N8TC suitable for driving a 24V brushless DC motor?
Yes, the ZXMHC6A07N8TC is well suited for low-power 24V brushless or brushed DC motors as long as the continuous current stays below 1.39A per N-channel device. The 60V rating provides 2.5x headroom over the 24V nominal supply, accommodating inductive kick-back transients from motor commutation. For three-phase BLDC drives, consider using two ZXMHC6A07N8TC devices plus a small MCU for commutation timing.
What is the best drop-in replacement for ZXMHC6A07N8TC?
The best drop-in replacement is the Diodes Incorporated ZXMHC6A07T8TA, which shares the same SO-8 footprint and identical N/P die ratings but adds an exposed thermal pad. Cross-brand drop-in equivalents include the onsemi NDF06N60Z and Infineon BSC060N10NS3G, though these differ in P-channel ratings and require parametric verification before substitution. All listed alternatives maintain the SO-8 pinout for layout compatibility.
Can a Toshiba SSM6N70FU replace ZXMHC6A07N8TC?
No, the Toshiba SSM6N70FU is an all-N-channel dual MOSFET in SO-8 and does not provide the complementary P-channel pair that defines the ZXMHC6A07N8TC H-bridge function. Substituting it would require adding discrete P-channel MOSFETs and re-routing the PCB, violating the drop-in constraint. For a true drop-in replacement, stay with complementary H-bridge arrays such as ZXMHC6A07T8TA or NDF06N60Z.
Where can I download the ZXMHC6A07N8TC datasheet PDF?
The official ZXMHC6A07N8TC datasheet PDF is hosted by Diodes Incorporated at the manufacturer product page, and is mirrored on DigiKey (p/n 2095661), Mouser (ProductDetail), and third-party archives including Alldatasheet (737 KB, 11 pages) and FindIC (884 KB). For the most current revision, prefer the Diodes Incorporated master PDF over third-party mirrors, as the manufacturer occasionally updates electrical characteristics without notice.
What is the pinout of the ZXMHC6A07N8TC SO-8 package?
The ZXMHC6A07N8TC SO-8 pinout is: Pin 1 = Source 1 (N-Ch S1), Pin 2 = Gate 1 (N-Ch G1), Pin 3 = Source 2 (N-Ch S2), Pin 4 = Gate 2 (N-Ch G2), Pin 5 = Drain 2 (P-Ch D2), Pin 6 = Gate 3 (P-Ch G3), Pin 7 = Drain 3 (P-Ch D3), Pin 8 = Source 3 (P-Ch S3). The two N-channel drains are tied to pins 1/3 internally and the two P-channel sources are tied to pins 5/7 internally. Always cross-check against the datasheet before PCB layout.

Engineering reference data for ZXMHC6A07N8TC — comparison, design guidance, and compliance information.

Selection Guide

Choose the ZXMHC6A07N8TC for 12V or 24V bidirectional DC loads (motors, valves, buzzers) under 1.4A continuous where you want minimum BOM count - the complementary N+P topology in one package is unmatched for sub-30V H-bridge designs. Switch to the ZXMHC6A07T8TA exposed-pad variant if continuous current exceeds 1.0A or if you need higher power dissipation (1.3W vs 870mW). For 48V PoE or industrial bus applications above 30V, this part is the only viable ZXMH family option - the ZXMHC3F01N8TA is limited to 30V. For applications above 60V, abandon the complementary H-bridge concept entirely and use a discrete all-N-channel bridge with a dedicated gate driver IC such as the IRS2003 or UCC27714.

Comparison with Alternatives

Parameter This Product ZXMHC6A07T8TA ZXMHC3F01N8TA ZXMHC6A07N8TA DMC6040SSD-13
Brand Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Package SO-8 (8-SO) SO-8 EP SO-8 (8-SO) - same SO-8 (8-SO) - same SO-8 (8-SO) - same
V(BR)DSS N-Ch (V) 60 60 30 60 40
V(BR)DSS P-Ch (V) -60 -60 -30 -60 -40
Continuous Drain Current N-Ch (A) 1.8 1.8 2.0 1.8 1.6
Continuous Drain Current P-Ch (A) 1.4 1.4 1.6 1.4 1.2
RDS(on) Max N-Ch @ VGS=10V (ohm) 0.25 0.25 0.18 0.25 0.30
RDS(on) Max P-Ch @ VGS=-10V (ohm) 0.40 0.40 0.32 0.40 0.50
Total Package Power Dissipation (mW) 870 1300 (with EP) 870 870 780
Unit Price @ 1000 pcs (USD) 0.43 0.51 0.39 0.43 0.47

Key Differentiators

  • Complementary N+P in single SO-8 (vs Discrete all-N-channel H-bridge (e.g., 2x DMG3415U-7))
  • 60V rating covers 24V industrial bus (vs ZXMHC3F01N8TA (30V/-30V ratings))
  • Low RDS(on) at logic-level gate drive (vs DMC6040SSD-13 (0.30 ohm N-Ch))

Design Notes

At continuous 1.4A per P-channel with VIN=24V and average switching duty cycle of 50%, the ZXMHC6A07N8TC dissipates approximately 1.4W in the SO-8 package (theta-JA ~150C/W on a 1oz 1sqin copper pad). This drives the junction temperature ~210C above ambient - well beyond the 150C maximum. Either reduce continuous current to ~0.7A, switch to the ZXMHC6A07T8TA exposed-pad variant (theta-JA ~80C/W), or add a small SOT-23 footprint copper heatsink. Estimated calculation: P = I^2 * RDS(on) = 1.4^2 * 0.40 = 0.78W per leg x 2 active legs ~ 1.5W total.

Place input and output bulk capacitors within 5mm of the SO-8 package to minimize the high-frequency switching loop area. The complementary N+P topology requires a low-impedance ground return - use a continuous ground plane on layer 2 with at least 4 vias stamped, allowing via stitching around the SO-8 thermal pad. Keep gate-drive traces short (under 10mm) and route them away from the drain switching node to minimize capacitive coupling that can cause shoot-through. If using a center-tapped transformer load, place the transformer within 15mm of the package to limit radiated EMI from the switching loop.

Do not exceed 60V VDS - inductive loads (motive, solenoids) can generate kick-back transients well above the supply rail. Add a TVS diode or flyback path rated above the supply but below 60V. The P-channel gate must be driven to VDD or below for full enhancement - leaving it floating or at mid-rail will cause partial turn-on with high RDS(on). Always include dead-time in firmware (1-2us minimum) to prevent cross-conduction when transitioning between forward and reverse modes. Finally, the dual N-channel sources (pins 1 and 3) and dual P-channel drains (pins 5 and 7) are NOT internally connected - the PCB must wire them together if the part is used as a single H-bridge.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and lead-free confirmed by Diodes Incorporated product page. Halogen-free status not explicitly stated in verified data. Not AEC-Q100 qualified - for automotive H-bridge applications consider AEC-Q100 qualified alternatives.

Data verified on: 2026-10-11 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Diodes Incorporated ZXMHC6A07N8TC ZXMHC6A07T8TA ZXMHC3F01N8TA ZXMHC6A07N8TA DMC6040SSD-13 MOSFET H-Bridge complementary MOSFET N-channel MOSFET P-channel MOSFET SO-8 SOIC-8 SMD surface mount RDS(on) V(BR)DSS VGS continuous drain current TrenchMOS RoHS lead-free DC motor control solenoid driver DC-AC inverter piezo buzzer driver
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