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ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
The Infineon ISCH57N04NM7VSCATMA1 is an OptiMOS 7 N-channel power MOSFET optimized for 40 V motor-drive applications, rated for 52 A continuous drain current at Ta and 443 A pulsed at Tc in a 5x6 mm PQFN (PG-WSON-8-2) Dual Side Cooled package. It uses Infineon's latest 40 V trench technology and is specifically engineered for the high switching frequencies and low conduction losses required by modern BLDC motor drives, eFPCs, and robotic drives. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern power electronics, sitting at the lowest level of the power-conversion hierarchy: MOSFET -> power switch -> power semiconductor -> discrete semiconductor. OptiMOS 7 represents Infineon's seventh-generation 40 V platform, replacing OptiMOS 5 and OptiMOS 6 with substantially reduced figure-of-merit (RDS(on)*Qg), allowing either lower conduction loss for the same gate drive, or faster switching for the same thermal budget. Key features include a drain-source voltage rating of 40 V, a pulsed drain current of 443 A at case temperature, and a power dissipation of 214 W at Tc. The PQFN 5x6 package exposes the die on BOTH the top and bottom surfaces (Dual Side Cooled / DSC), enabling direct attachment to a topside cold plate or PCB inner copper in addition to the standard bottom thermal pad - a critical advantage in motor-drive PCBs where backside thermal headroom is limited. The device is built on Infineon's advanced 40 V trench process and packaged as PG-WSON-8-2, with source-down lead-frame configuration that minimizes package inductance and source-loop resistance. Optimized gate charge and low RDS(on) make it well-suited to hard-switched and soft-switched topologies at 50-200 kHz without exceeding driver losses. Typical applications include BLDC/PMSM motor drives for e-mobility, robotic actuators, cordless power tools, e-bike controllers, and 24 V industrial automation drives. The 40 V rating provides ample headroom above 19 V nominal 6S Li-ion packs and 24 V industrial rails, while the low RDS(on) minimizes I²R losses during high-torque PWM commutation. When designing with this part, ensure the gate drive swings to 10 V (logic-level operation is NOT supported), and provide a Kelvin-source connection where possible to suppress source-inductance-induced turn-on losses. The exposed top metal also requires thermal interface material if a cold plate is used. This page synthesizes Infineon datasheet parameters, real distributor pricing from DigiKey/Mouser (as of 2026-09-15), and drop-in alternatives - information not consolidated on any single distributor page.
ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon
The Infineon ISCH99N04NM7VATMA1 is an N-channel 40 V OptiMOS 7 power MOSFET in a surface-mount PG-TDSON-8 (TDSON-8 FL) package, delivering up to 284 A pulsed drain current at case temperature and 40 A continuous at Ta. It belongs to Infineon's OptiMOS 7 40 V motor-drive-optimized family and is rated at 3 W dissipation at Ta and 150 W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain terminals. The OptiMOS 7 family represents Infineon's 7th-generation trench MOSFET technology for 12 V to 48 V power systems, where it sits within the broader taxonomy of discrete semiconductors > MOSFETs > N-channel power MOSFETs > power management switches. Compared to older planar generations, OptiMOS 7 reduces R_DS(on) per area and tightens switching loss/figure-of-merit for high-frequency converters. Key features include an industry-leading R_DS(on) optimized for 40 V systems, up to 3x wider Safe Operating Area versus OptiMOS 6, and a controlled transconductance (g_fs) that is 70% lower than prior generations. A higher gate threshold voltage (V_th up to 3.2 V) provides enhanced induced turn-on ruggedness and inherent short-circuit current limitation, while the price-performance-optimized silicon enables cost-effective designs for harsh-environment applications. Typical applications include 12 V to 48 V brushless DC (BLDC) motor drives in e-mobility, battery-powered power tools, e-bike controllers, cordless vacuum cleaners, low-voltage drives in robotics, and telecom 48 V point-of-load converters. The wide SOA and high pulse-current handling also make it suitable for automotive ECU loads and industrial automation modules operating near rated current limits. When designing with the ISCH99N04NM7VATMA1, place the source pad (PG-TDSON-8 FL exposed pad) over a sufficiently large copper pour to keep the junction below the maximum 175 C rating under worst-case SOA conditions. Because of the high V_th (up to 3.2 V), the device tolerates induced turn-on from fast dV/dt edges better than lower-Vth predecessors, simplifying gate-drive design. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer product page alone.
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
The Infineon ISK057N04LM6ATLA1 is a 40 V N-channel MOSFET from the OptiMOS 6 40 V family, delivering up to 64 A continuous drain current (Tc) in a 6-pin PG-VSON-6-1 (PQFN 2x2) surface-mount package. It features an extremely low typical on-resistance of 5.7 mΩ at 10 V VGS and a logic-level gate drive range, making it well suited for high-density synchronous rectification, DC-DC converter stages, and wireless charging transmit coils. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element of modern power electronics. Within the device hierarchy, this part sits as: N-channel MOSFET → power MOSFET → discrete semiconductor → power management component. OptiMOS 6 represents Infineon's sixth-generation 40 V trench MOSFET platform, optimized for low RDS(on), low gate charge (Qg), and low Figure-of-Merit (FOM = RDS(on) × Qg) to minimize conduction and switching losses in high-frequency SMPS topologies. Key specifications include a 40 V drain-to-source breakdown (VDS max), 64 A continuous drain current at case temperature (ID @ Tc), and a typical RDS(on) of 5.7 mΩ at VGS = 10 V. The PG-VSON-6-1 (PQFN 2x2) package measures only 2 mm × 2 mm with an exposed drain pad that doubles as a thermal dissipation path. The device is rated for 2.1 W power dissipation at TA = 25 °C and 39.1 W at TC = 25 °C, with a junction-to-ambient thermal resistance (RθJA) of approximately 60 °C/W on a standard JEDEC 2s2p test board. The trench-gate architecture reduces gate charge to roughly 8-12 nC typical, enabling switching frequencies above 1 MHz in buck or half-bridge converters. Logic-level compatibility (full enhancement at VGS ~4.5 V) allows direct drive from 5 V PWM controllers without a charge-pump or gate-drive boost stage. The device supports both hard-switching and soft-switching topologies with robust avalanche capability. Typical applications include DC-DC point-of-load converters (POL), wireless charging TX coils, USB-PD power-path OR-ing, motor drive H-bridges, and battery protection in 1S-3S Li-ion packs. The compact 2x2 mm footprint is ideal for smartphone PMIC sub-circuits where board area is at a premium. Design consideration: maximize the copper area beneath the exposed pad and use multiple thermal vias to the inner ground plane. Without adequate PCB heatsinking, the 60 °C/W RθJA limits continuous current well below the 64 A rating. Avoid exceeding the SOA envelope during startup transients in hard-switched converters. This page consolidates distributor pricing, parametric comparison tables, drop-in alternatives, and practical PCB layout notes that supplement the manufacturer datasheet with engineering context.
ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
The Infineon ISK057N04LM6ATSA1 is a 40V N-channel OptiMOS 6 power MOSFET housed in a compact PG-VSON-6-1 (PQFN 2x2) surface-mount package. It delivers continuous drain current of 15A at 25C ambient (Ta) and 64A at case temperature (Tc), with a maximum power dissipation of 39.1W at Tc and 2.1W at Ta. The device features an ultra-low typical on-resistance of approximately 5.7 mOhm at 10V VGS and 8.3 mOhm at 4.5V VGS, leveraging Infineon's latest OptiMOS 6 trench technology for best-in-class Figure-of-Merit. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch and one of the foundational building blocks of modern power electronics. Within the power semiconductor hierarchy, MOSFETs sit beneath IGBTs and thyristors and above simple diodes, optimized for high-frequency switching at lower voltages (typically <600V). The OptiMOS 6 family specifically targets sub-100V applications where low conduction loss, low switching loss, and minimal thermal resistance are simultaneously required - making these parts the workhorse of synchronous rectification, DC-DC conversion, and motor drive stages. Key features of the ISK057N04LM6 include a typical gate threshold of 2.3V, total gate charge (Qg) of 12nC at 10V VGS, input capacitance (Ciss) of 870pF, output capacitance (Coss) of 290pF, and reverse transfer capacitance (Crss) of 21pF. The small PQFN 2x2 footprint occupies just 4 mm² of PCB area while the exposed drain pad delivers a junction-to-case thermal resistance of approximately 1.0 C/W (estimated from 39.1W Pd and 150C Tj), enabling high-current handling in space-constrained designs. Typical applications for the ISK057N04LM6ATSA1 include wireless-charging transmitter coils, synchronous buck converters in point-of-load regulators, USB-PD and battery-management load switches, motor-driver half-bridges, and DCDC point-of-load stages for IoT wearables. Its low Qg enables sub-microsecond switching transitions, reducing dead-time losses in half-bridge topologies. When designing with this device, observe the absolute maximum ratings: VDS of 40V and VGS of ±20V (±12V recommended for optimal Rds(on)). Ensure the gate-drive voltage is fully enhanced (>4.5V) and that adequate copper area is connected to the exposed pad to dissipate losses. For wireless charging, place the MOSFET adjacent to the resonant coil and minimize the high-current loop area to reduce EMI.
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon ISZ019N03L5SATMA1 is a 30V N-channel power MOSFET from Infineon's OptiMOS 5 30V family, housed in a 5x6 mm PG-TSDSON-8-FL surface-mount package with an exposed pad. It features an extremely low typical on-resistance of 1.9 mΩ at VGS=10V and a continuous drain current of 22 A at TA=25°C (40 A at TC=25°C), making it one of the lowest-RDS(on) parts in its package size. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs sit in the discrete semiconductor hierarchy between small-signal transistors and IGBTs, optimized for fast switching at voltages typically from 12V to 300V. The Infineon OptiMOS family specifically targets synchronous rectification, OR-ing, hot-swap, and battery-protection applications where ultra-low RDS(on) and small footprint are mandatory. Key specifications include 1.9 mΩ typical RDS(on) at 10V VGS, a gate threshold (VGS(th)) of 2V typical with ±20V maximum gate rating, a total gate charge (Qg) of 44 nC at 10V, and an input capacitance (Ciss) of 2800 pF at 15V. The device is rated for avalanche operation and 100% Rg-tested, providing robust performance in hard-switching topologies. The PG-TSDSON-8-FL package offers superior thermal performance through the exposed die-attached pad. Typical applications for the ISZ019N03L5SATMA1 include synchronous rectification in telecom and server DC-DC converters, battery management and protection circuits in 12V Li-ion packs, OR-ing and hot-swap controllers, motor drive half-bridges in 12V/24V systems, and high-current USB Power Delivery (PD) load switches. Its low gate charge and tight threshold distribution also make it well suited to high-frequency point-of-load converters. When designing with this MOSFET, minimize parasitic source inductance by keeping the source Kelvin connection short, and use a 10kΩ gate-source resistor to prevent unwanted turn-on from dv/dt coupling. For high-current applications, ensure the PCB copper area under the exposed pad is maximized to keep junction temperature below the 175°C absolute maximum.
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISZ023N06LM6ATMA1 is an OptiMOS 6 60 V N-channel power MOSFET rated at 24 A continuous drain current (Ta) and 149 A pulsed drain current (Tc) in a PG-TSDSON-8-34 surface-mount package. As part of Infineon's OptiMOS 6 60 V family, it delivers >37% lower RDS(on) and ~25% higher figure-of-merit than the previous OptiMOS 5 generation, making it one of the lowest-resistance 60 V MOSFETs on the market in this footprint. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals in power conversion applications. MOSFETs sit within the broader hierarchy of discrete semiconductors, alongside IGBTs, BJTs, and diodes, and they dominate low-to-medium voltage (<200 V) synchronous rectification, hot-swap, motor drive, and DC-DC conversion designs. The 60 V class specifically targets automotive 12 V/24 V systems, telecom 48 V rails, industrial power supplies, and USB Power Delivery (USB-PD) fast-charging adapters. Key specifications include an extremely low RDS(on) (per the OptiMOS 6 family, sub-3 mOhm typical at 10 V VGS), 60 V VDS rating, low gate charge Qg for fast switching, and an operating temperature range of -55C to +175C. The PG-TSDSON-8-34 package provides an exposed drain pad that minimizes thermal resistance and enables direct PCB copper-cooling, removing the need for an external heatsink at moderate dissipation levels. Logic-level VGS(th) ensures compatibility with standard 5 V and 3.3 V microcontroller GPIO drivers. OptiMOS 6 technology uses Infineon's advanced trench-cell architecture with a refined gate structure and epitaxial layer that simultaneously minimizes conduction loss, switching loss, and output charge. The result is a device that excels in both hard-switching topologies (synchronous buck/boost converters) and soft-switching applications (LLC, phase-shifted full-bridge). Compared with older planar MOSFETs of the same RDS(on), OptiMOS 6 typically halves switching losses at 100-500 kHz frequencies. Typical applications include 48 V telecom hot-swap controllers, automotive LED headlight drivers, USB-PD fast-charging adapters, e-bike and e-scooter motor controllers, server DC-DC point-of-load converters, and battery management systems (BMS) protection MOSFETs. Its combination of low RDS(on), high current pulse rating, and small footprint makes it especially suited to space-constrained, high-efficiency designs. When designing with this part, ensure VGS drive is in the 10 V range for lowest RDS(on); 4.5 V VGS will work but increases conduction loss. PCB layout must keep the source-kelvin connection (pin 2) short and direct to the gate driver to prevent gate ringing. Thermal vias under the exposed pad are mandatory; a 6 cm2 copper pour per the datasheet is recommended for full 100 W rating. This page synthesizes Infineon datasheet specifications, distributor pricing, and drop-in alternatives - providing engineering context not aggregated on distributor product pages.
ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon ISZ025N06NM6ATMA1 is a 60 V N-channel power MOSFET from the OptiMOS 6 family, rated for 137 A continuous drain current at 25 °C case temperature and packaged in the compact PG-TSDSON-8-34 (5x6 mm) surface-mount footprint with an exposed drain pad. It delivers a maximum on-resistance of 2.5 mΩ at VGS = 10 V, the lowest RDS(on) in the OptiMOS 6 60 V lineup, and is qualified for both 22 A continuous drain current at Ta and 137 A at Tc operation. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between drain and source. N-channel MOSFETs are the dominant device type in low-voltage synchronous buck converters, motor drives, and battery protection circuits because of their lower on-resistance per unit silicon area compared to P-channel counterparts. The OptiMOS 6 60 V family sits in the voltage regulator -> DC-DC converter -> power management IC hierarchy, targeting high-current point-of-load and OR-ing applications where conduction loss dominates. Key differentiators include >37% lower RDS(on) and ~25% higher figure-of-merit (FOM, RDS(on) × Qg) versus the previous OptiMOS 5 generation, plus a 100 W power dissipation rating at Tc that enables high-current designs without paralleling devices. The 3.3 V typical gate threshold supports 5 V logic-level drive while still maintaining a safety margin against accidental turn-on. The PG-TSDSON-8-34 package exposes the drain to a top-side thermal pad, reducing PCB loop inductance and improving heat-sinking through the board. The ISZ025N06NM6 uses Infineon's latest trench MOSFET technology with a soft-switching optimized body diode, reducing ringing in half-bridge topologies. This makes it well-suited to high-frequency telecom and server DC-DC converters where switching losses and reverse-recovery charge directly impact efficiency. The low Qg and Qgd also reduce gate-driver losses and simplify parallel-device designs. Typical applications include 48 V telecom bus OR-ing and hot-swap controllers, synchronous buck converters in server and datacom VRMs, e-fuse and battery protection in 24 V/48 V industrial systems, motor drive H-bridges, and USB-PD power adapters above 100 W. The wide safe operating area also makes it suitable for solenoid driving and Class-D audio output stages. When designing with this device, place the gate-driver within 5 mm of the gate pin to minimize parasitic inductance, and use a 10 Ω gate resistor to dampen the miller plateau ringing. The exposed top pad must be soldered to a continuous copper pour of at least 50 mm² for the 100 W dissipation rating to be achievable at Tc = 25 °C. This page synthesizes distributor pricing, drop-in alternatives from the Site MPN list, and thermal/layout design notes not found in the manufacturer datasheet alone.
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
The Infineon ISZ028N03LF2SATMA1 is an N-channel 30V StrongIRFET 2 power MOSFET rated at 128A continuous drain current (Tc) and 22A continuous drain current (Ta), with a maximum on-resistance of 2.8 mΩ and a 2.35V gate threshold voltage, packaged in a compact surface-mount PG-TSDSON-8 FL package. It combines ultra-low RDS(on) with high pulsed-current handling, optimized for high-frequency switching from low- to high-frequency power conversion. The device dissipates up to 83W at Tc and 3W at Ta. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern switching power conversion. StrongIRFET 2 is Infineon's second-generation family of low-voltage power MOSFETs that improve upon classic StrongIRFET by lowering RDS(on) for the same silicon area, increasing current density, and reducing gate charge (Qg) to shrink switching losses. Within the broader component taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> transistor -> semiconductor. StrongIRFET 2 specifically targets synchronous rectification, hot-swap ORing, and high-current DC-DC conversion where every milliohm of conduction loss translates into measurable efficiency improvement. Key features of the ISZ028N03LF2SATMA1 include an optimized synchronous-rectifier cell design, low Qg to reduce driver losses, avalanche-rated single-pulse robustness, a logic-level-compatible gate threshold around 2.35V, and an industry-standard 8-pin TSDSON footprint with an exposed thermal pad. The PG-TSDSON-8 FL package has no leads on two sides (the FL = 'flat lead' variant) and provides a very low package resistance, keeping the total circuit-loop RDS(on) close to the silicon RDS(on). Together these properties make the part easy to drive from standard PWM controllers while keeping conduction and switching losses low. The architecture uses Infineon's advanced trench MOSFET cell technology, paired with a copper-clip-style internal source connection that minimizes package resistance contribution. Compared to older D2PAK or DPAK packages with similar silicon area, the TSDSON-8 FL dramatically shrinks PCB footprint while improving thermal coupling to the PCB copper, allowing designs that handle >80W in the same board space previously used for <30W converters. The result is a parts list simplification: smaller magnetics, smaller heatsinks, and easier layout. Typical applications include high-frequency synchronous rectification in 12V-to-low-voltage DC-DC converters (e.g., 12V->3.3V/5V POL), high-current hot-swap and ORing for server/ telecom boards, battery management in 12V/24V e-mobility, USB-PD and other Type-C sink power paths, and motor drive H-bridges for low-voltage brushless DC motors. The device's low RDS(on) minimizes I²R loss on the high-current side, directly improving system efficiency and thermal headroom. When designing with this part, place the gate driver as close as possible to the gate pin to minimize ringing. Use a Kelvin-source connection if available, and ensure the PCB copper under the exposed pad is sized to handle the steady-state dissipation. Recommended gate-drive voltage is 10V for lowest RDS(on); 4.5V is acceptable for logic-level systems with reduced performance. This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-14, drop-in alternatives within the StrongIRFET 2 family, and practical design notes that go beyond the bare datasheet figures.
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon ISZ033N03LF2SATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 30 V VDS, 20 A continuous drain current at TA=25 C (109 A pulsed at TC=25 C), and 3 W power dissipation at TA (71 W at TC), housed in a surface-mount PG-TSDSON-8 FL package. Built on Infineon's advanced OptiMOS 5 30 V platform, this MOSFET targets high-frequency, high-current switching applications where low on-resistance and minimal gate charge are critical to efficiency. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current from drain to source when the gate-source voltage exceeds the threshold. The OptiMOS 5 family is Infineon's 30 V/40 V/60 V/80 V/100 V generation of low-voltage N-channel MOSFETs, sitting within the broader taxonomy of power MOSFET -> power semiconductor -> discrete semiconductor -> electronic component. They are designed to minimize conduction loss (low RDS(on)), switching loss (low Qg, Qgd), and figure-of-merit (FOM = RDS(on) x Qg) — parameters that directly determine switching-converter efficiency. Key features of the ISZ033N03LF2SATMA1 include an extremely low on-resistance for a 30 V N-channel device, ultra-low gate charge Qg enabling fast switching edges, low RDS(on) x Qg figure-of-merit, and an operating junction temperature up to +175 C. The PG-TSDSON-8 FL (flip-chip leadless) package has a top-side cooling thermal pad that pulls heat directly out of the silicon die, dramatically lowering thermal resistance compared to standard wire-bonded TSDSON packages. From an architecture perspective, this part uses Infineon's latest-generation silicon process to deliver a sub-milliohm-class on-resistance at 10 V gate drive, while still maintaining safe linear-mode operation. The device is engineered for both hard-switched and soft-switched topologies including synchronous buck converters, point-of-load regulators, and motor-drive half-bridges operating at switching frequencies from 100 kHz to over 1 MHz. Typical applications include DC-DC voltage regulators for telecom and server power supplies, OR-ing FETs in redundant 12 V / 24 V distribution, battery management and protection circuits in cordless power tools, USB-PD and Type-C load switches, and synchronous rectification in secondary-side SMPS stages. The 30 V rating gives comfortable headroom for 12 V bus rails and 19 V laptop adapters. When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V to fully enhance the channel and achieve the lowest RDS(on). For high-frequency applications above 500 kHz, pay close attention to gate-loop inductance and use a gate-source resistor of 10-100 ohm to suppress ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. The PG-TSDSON-8 FL package features an exposed top-side pad that interfaces directly with the silicon backside, enabling direct PCB-side cooling in both top- and bottom-cooled configurations. This makes it an excellent choice for high-density designs where the footprint is constrained but thermal dissipation must remain low.
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
The Infineon ISZ056N03LF2SATMA1 is an N-channel power MOSFET rated at 30 V drain-source voltage with 72 A continuous drain current (Tc), built on Infineon's StrongIRFET 2 technology and housed in a PG-TSDSON-8 (PQFN 3.3x3.3) surface-mount package. Key parameters include a maximum on-resistance of 5.6 mOhm at 10 V VGS, a gate threshold of 2.35 V, and power dissipation of 3 W (Ta) or 52 W (Tc). A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between drain and source. MOSFETs sit within the discrete semiconductor hierarchy: MOSFET -> transistor -> semiconductor -> electronic component. The StrongIRFET 2 family targets low to high switching frequencies and is engineered to minimize conduction loss (RDS(on)) and switching loss simultaneously, making them well-suited to synchronous rectification, DC-DC conversion, and motor drive stages. This device delivers an industry-leading 5.6 mOhm max RDS(on) in a compact 3.3x3.3 mm PQFN outline, an area that is roughly 60% smaller than equivalent DPAK or D2PAK footprints. The low figure-of-merit (FOM = RDS(on) x Qg) reduces both conduction and switching losses, improving overall converter efficiency. The part is fully lead-free, RoHS compliant, and uses an environmentally friendly Pb-free plating. Typical applications include synchronous rectification in 24 V telecom and industrial bus converters, OR-ing and hot-swap controllers in server power supplies, BLDC motor drivers in 12 V e-mobility tools, USB Power Delivery (PD) and DC-DC buck/boost converters, and battery management protection FETs in 1S-3S Li-ion packs. The low gate charge and low thermal resistance of the exposed pad enable fast switching at 200 kHz to 1 MHz without compromising efficiency. Design considerations include minimizing source-inductance loop area in the PCB layout, providing sufficient copper pour under the exposed pad for heat extraction, and ensuring the gate driver can supply 4.5 V VGS for full enhancement. The maximum junction temperature is 175 C with appropriate derating, and Tj reference thermal resistance is 50 C/W max at steady state. This page synthesizes Infineon datasheet specifications, distributor pricing, drop-in alternatives, and practical design guidance not found on the manufacturer product page alone.
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
The Infineon ISZ072N06NM6ATMA1 is an N-channel OptiMOS 6 60V power MOSFET rated for 57A continuous drain current (at case) and 12.7A (at ambient Ta), housed in a compact PG-TSDSON-8-34 surface-mount package with a maximum on-resistance of 7.2 mΩ. It delivers >37% lower RDS(on) and approximately 25% higher figure-of-merit (FOM Qg) versus the previous OptiMOS 5 generation. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs in the 60V class sit in the power-management hierarchy: MOSFET -> discrete semiconductor -> power switch -> DC-DC converter / motor drive building block. They are the workhorse of synchronous rectification, hot-swap, and low-voltage (<60V) high-current load switching across automotive, industrial, and computing systems. Key features of this OptiMOS 6 device include a 7.2 mΩ maximum RDS(on) at 10V VGS, optimized gate charge for high-frequency switching, a logic-level capable threshold around 3.3V, and a low thermal resistance path through the exposed-drain PG-TSDSON-8-34 package. The device is rated for 50W power dissipation at 25°C case temperature with proper PCB copper area (6 cm² on 40x40x1.5mm FR4 with 70µm copper), making it well suited to space-constrained high-current designs. The OptiMOS 6 technology platform uses Infineon's advanced trench cell architecture to minimize both conduction and switching losses. Compared to planar MOSFETs of similar rating, this part exhibits substantially lower gate charge (Qg) and Qgd, which directly reduces driver losses in high-frequency applications such as switched-mode power supplies operating at 500 kHz to 1 MHz. Typical applications include 48V eMobility auxiliary systems, DC-DC converter primary-side synchronous rectification, hot-swap and OR-ing circuits in telecom/server power distribution, motor drive H-bridges for 12V/24V/48V brushless DC motors, and high-current load switching in industrial PLCs. The 60V rating also covers 48V nominal battery systems and 36V nominal e-bike / light eMobility rails with substantial transient headroom. When designing with this MOSFET, ensure the gate drive voltage reaches 10V for full RDS(on) enhancement; logic-level operation at 3.3V is partially enhanced, so the on-resistance is higher than the datasheet minimum. A gate-source resistor of 10 kΩ is recommended to prevent inadvertent turn-on from dv/dt-induced Miller current, and PCB layout must minimize the source-loop inductance to limit ringing and voltage overshoot. This page synthesizes distributor inventory data, drop-in alternative MPNs in the same PG-TSDSON-8-34 footprint, and practical design notes that supplement the Infineon datasheet for engineering selection.
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
The Infineon ISZ15EP15LMATMA1 is a P-channel power MOSFET built on Infineon's OptiMOS technology, rated for -150 V drain-source voltage with a maximum on-resistance of 1500 mOhm at 10 V gate drive, housed in a compact 8-pin PG-TSDSON (PQFN 3.3 x 3.3 mm) package with an exposed thermal pad. The device delivers continuous drain current of 820 mA at TA=25C and 2.7 A at TC=25C, with power dissipation of 2.5 W on the PCB and 26.3 W with case cooling. A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by negative charge carriers (holes) when a negative gate-source voltage is applied relative to the source terminal. P-channel MOSFETs occupy the high-side switch position in low-side-grounded systems and simplify gate drive in negative-rail or load-switching applications because the gate can be referenced to the same ground as the upstream controller. Within the broader taxonomy, this part belongs to the discrete MOSFET family, which itself is a subclass of power semiconductors under the discrete semiconductor hierarchy. The OptiMOS designation indicates Infineon's trench-gate process optimized for low on-resistance per unit silicon area. Key features of the ISZ15EP15LMATMA1 include the trench-gate OptiMOS process for low RDS(on) per area, a logic-level compatible gate drive that simplifies interface to 3.3 V or 5 V microcontrollers through an external charge pump or gate driver, a maximum drain-source voltage of -150 V for high-side switching in 48 V, 60 V, or 100 V buses, and a thermally enhanced PQFN 3.3 x 3.3 package with an exposed die pad (EP) that lowers thermal resistance and enables PCB heatsinking through copper pours. Typical applications include high-side load switches in industrial 48-100 V systems, battery management systems for protection FETs in 24-96 V battery packs, USB-PD and e-Marker power path switching, hot-swap controllers, and adapter or charger reverse-polarity protection. The compact PQFN footprint also makes it attractive in space-constrained DC/DC converters and motor pre-driver stages. Designers should pay attention to gate drive headroom. Because the gate-source threshold is negative for a P-channel MOSFET, the device requires the gate to be pulled at least 4-6 V below the source to fully enhance. A small gate-source resistor (10-100 kOhm) is recommended to prevent floating-gate turn-on during transients, and the exposed pad must be soldered to a sufficiently large copper pour to manage the 2.5 W PCB dissipation rating. This page synthesizes Infineon OptiMOS P-channel parametric data, distributor pricing, drop-in alternatives, and practical design guidance that go beyond the manufacturer datasheet alone.
ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon
The Infineon ISZ173N15NM6ATMA1 is an N-channel OptiMOS 6 power MOSFET rated at 150V with 48A continuous drain current in a compact PG-TSDSON-8 FL surface-mount package. Part of Infineon's OptiMOS 6 150V family, it delivers industry-leading Figure of Merit (FOM) for high-frequency switching applications, achieving 7.9A continuous drain current at ambient temperature (Ta) and 48A at case temperature (Tc), with 2.5W power dissipation at Ta and 94W at Tc. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that enables efficient power conversion in switched-mode power supplies, motor drives, and DC-DC converters. The MOSFET category sits within the broader hierarchy of discrete power semiconductors, alongside IGBTs, BJTs, and thyristors, serving as the workhorse for low-to-medium voltage (<300V) switching applications where fast switching, low conduction loss, and high efficiency are critical. Key features of the ISZ173N15NM6ATMA1 include ultra-low RDS(on) values optimized for high-current applications, integrated gate protection, and excellent thermal performance in a small footprint. The PG-TSDSON-8 FL package features a low-profile design with an exposed drain pad that significantly reduces thermal resistance, enabling high power dissipation in space-constrained PCB layouts. The OptiMOS 6 technology platform represents Infineon's sixth-generation power MOSFET architecture, using advanced trench-gate structures to minimize both switching and conduction losses. This technology is specifically engineered for high-frequency, hard-switching applications like telecom DC-DC converters, server power supplies, and solar microinverters, where reduced switching losses directly translate to higher system efficiency and reduced cooling requirements. Typical applications include 48V telecom bus converters, synchronous rectification in switched-mode power supplies (SMPS), motor drive circuits in 48V-72V battery systems, solar power optimizers, and Class-D audio amplifiers. The 150V voltage rating provides ample margin for 48V, 60V, and 96V bus systems with inductive switching transients. When designing with this MOSFET, ensure gate-drive voltage compliance with the VGS(th) specification. The PG-TSDSON-8 FL package requires careful PCB thermal design - at least 6 cm² of copper area on a 40mm x 40mm x 1.5mm FR4 PCB is required to achieve rated performance. Proper gate-driver selection minimizes switching losses and EMI.
ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
The Infineon ISZ230N10NM6ATMA1 is a 100V N-channel power MOSFET built on Infineon's OptiMOS 6 trench technology, housed in a compact PG-TSDSON-8 FL (3.3 x 3.3 mm) surface-mount package. The device delivers a continuous drain current of 7.7A at ambient temperature (Ta) and 31A at case temperature (Tc), with a maximum power dissipation of 3W (Ta) and 48W (Tc). According to the Infineon product brief, the ISZ230N10NM6 family offers 20% lower RDS(on) and 30% improved figure-of-merit versus the previous generation, optimizing it for high-frequency switching applications. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which a positive gate-to-source voltage creates a conductive n-channel between drain and source. N-channel MOSFETs are the workhorse of switched-mode power conversion because their lower on-resistance per unit silicon area (compared to P-channel devices) yields higher efficiency. The OptiMOS 6 family belongs to the broader category of power MOSFETs, which sit under discrete semiconductors in the power-management hierarchy and serve as the switching element in DC-DC converters, motor drives, and synchronous rectification stages. Key specifications include a typical on-resistance of 23 milliohms at VGS=10V and ID=10A, a low gate threshold around 3.3V at 13 microamps, and an avalanche-rated single-pulse body diode. The trench-gate structure minimizes both conduction and switching losses, while the FL (flip-chip leadless) package provides an extremely low package inductance path and top-side cooling through the exposed pad. The PG-TSDSON-8 footprint is widely second-sourced, giving board designers flexibility across the 100V MOSFET category. Typical applications include telecom 48V hot-swap controllers, server DC-DC point-of-load converters, solar micro-inverters, and high-frequency drone ESC power stages. The combination of low Qgd and low RDS(on) makes this part well suited to hard-switched topologies above 100 kHz where switching loss dominates. Compared with the OptiMOS 5 generation, the ISZ230N10NM6 reduces gate charge by approximately 30%, allowing smaller gate drivers and lower total BOM cost. When designing with this MOSFET, observe the SOA boundaries at high VDS and verify that the gate driver can supply the peak gate current demanded by Qg at the chosen switching frequency. Keep the gate-drive loop area minimal by placing the gate resistor and bypass capacitor directly at the gate pad. For high-side (high-side switch) or low-side placements, the same package pinout applies, but thermal coupling to the PCB copper pour is critical for sustained high-current operation.
IT - Invalid/Undefined MPN | [DATA_NEEDED: Manufacturer] | Component Verification Required
The MPN "IT" returned by the search query does not correspond to a specific, verifiable electronic component. According to the Verified Web Data retrieved on 2026-10-09, the search results returned generic IT-services price aggregators (itprice.com, techreviewer.co), Cisco/HP enterprise hardware price lists, and general electronic-component datasheet portals (DigiKey, Mouser, EETech, ALLDATASHEET, Datasheets360), with no datasheet, parametric data, or manufacturer association tied to "IT" as a part number. What is an MPN? A Manufacturer Part Number (MPN) is the unique alphanumeric identifier that a semiconductor or component vendor assigns to a specific product. An MPN encodes the product family, key parameters, package code, and qualification grade (e.g., TPS7A4701RGWR = TI, LDO family, 4701 variant, RGW = VQFN-20 package, R = tape-and-reel). Without a valid MPN, no datasheet, drop-in alternative, or distributor pricing can be sourced. Key facts: MPN "IT" has no identified manufacturer, no package code, no parametric specifications, and no cross-reference in the Alternatives Cross-Reference Data. The web search returned only generic IT-pricing tools and datasheet-portal homepages - these are NOT component data sources. This page is published as a placeholder so that engineers searching for "IT" see a clear explanation rather than a fabricated product. Typical validation steps when an MPN is ambiguous: (1) check for typos (e.g., "IT" vs "IR" - International Rectifier; vs "IF" - IFX; vs "IC" - generic IC prefix); (2) confirm the manufacturer prefix; (3) search the exact full MPN on the manufacturer product page; (4) if the MPN is a partial string, supply the full string (family + suffix + package code). Common manufacturer prefixes include TPS (Texas Instruments), STM (STMicroelectronics), LTC (Analog Devices), MAX (Maxim), PIC (Microchip), AT (Microchip/Atmel), LM (TI/onsemi). Design consideration: never substitute a placeholder or guessed MPN into a BOM. Unverified part numbers cause PCB rework, regulatory non-compliance, and supply-chain risk. Always validate the MPN against the manufacturer's official product page or authorized distributor (DigiKey, Mouser, Arrow, Avnet) before design-in. This page is a verification placeholder. XAIPART requires a valid manufacturer prefix + part family + package code to generate a complete product page with specifications, pricing, drop-in alternatives, and design notes.
IXA55I1200HJ - 1200V XPT IGBT, 84A, 290W | IXYS | ISOPLUS247
The IXYS IXA55I1200HJ is an XPT (eXtreme-light Punch-Through) single IGBT rated at 1200V collector-emitter voltage, 84A continuous collector current, and 290W maximum power dissipation, housed in a 3-pin ISOPLUS247 (TO-247AD-derivative) through-hole package with isolated mounting tab. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that combines the high-current, low-saturation-voltage characteristics of a bipolar transistor with the voltage-driven, fast-switching gate of a MOSFET. IGBTs sit in the power-switching hierarchy between power MOSFETs and thyristors: IGBT -> power transistor -> discrete semiconductor -> power electronic switch. They dominate medium-to-high voltage, medium-frequency switching applications such as motor drives, solar inverters, and UPS systems where voltages exceed 600V and currents exceed tens of amps. Key features of the IXA55I1200HJ include a low VCE(sat) of 2.1V at rated current, high-current handling capability, high-speed switching, low total energy losses (Eon + Eoff), and low current fall times. The XPT thin-wafer technology reduces switching losses versus standard PT IGBTs while maintaining rugged short-circuit withstand. The device is specified for an operating junction temperature up to 150 C. The ISOPLUS247 package provides an electrically isolated mounting surface, eliminating the need for an external insulator pad and sil-pad when bolting the part to a heatsink. This simplifies mechanical assembly, improves thermal cycling reliability, and reduces the BOM. The package outline follows JEDEC TO-247AD with the screw-hole and Lmax exceptions noted in the datasheet. Typical applications for the IXA55I1200HJ include industrial motor drives (low-voltage AC inverter stages up to 690V class), solar PV string inverters, uninterruptible power supplies (UPS), welding power converters, and induction-heating resonant converters. The 1200V rating provides sufficient margin for 480V three-phase rectified DC bus operation (peak ~680V) and 600V-class drives. When designing with this device, ensure gate-drive voltage is at least 15V (typical +15V/-5V or +15V/0V) to fully saturate the IGBT and minimize conduction losses. The isolated package allows direct heatsink mounting without an insulating thermal interface material, but thermal compound is still required to minimize junction-to-ambient thermal resistance. This page synthesizes distributor pricing, parametric comparisons, and practical design notes drawn from the IXYS datasheet and cross-reference searches, providing engineers with information not found on any single manufacturer or distributor product page.
IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD
The IXYS IXDH20N120 is a 1200 V, 38 A Non-Punch-Through (NPT) IGBT in a TO-247AD through-hole package, delivering 200 W of continuous power dissipation and square reverse-bias safe operating area (RBSOA) for hard-switched industrial topologies. It provides a collector-emitter voltage rating of 1200 V, continuous DC collector current up to 38 A at TC = 25 °C, and pulse current capability well above the continuous rating for transient loads. The die uses IXYS's high-voltage NPT technology that gives a positive temperature coefficient on VCE(sat), enabling easy paralleling of multiple devices for high-current converters without localized thermal runaway. A high-voltage IGBT (Insulated Gate Bipolar Transistor) is a minority-carrier power switch that combines a MOSFET gate input with a bipolar output structure, giving the low gate-drive power of a MOSFET and the low conduction loss of a bipolar transistor. NPT technology uses a uniform, non-heavily-doped drift region so the device exhibits a square RBSOA, short-circuit withstand (tSC) capability, and a positive temperature coefficient for VCE(sat), which simplifies thermal design when several IGBTs are paralleled. IGBTs sit in the discrete-semiconductor hierarchy IGBT -> power transistor -> discrete semiconductor -> semiconductor. Key features specified by the IXYS datasheet include VCES = 1200 V, IC25 = 38 A continuous collector current, PC = 200 W power dissipation, square RBSOA with no latch-up, short-circuit ruggedness, and an MOS input for voltage control. The optional D1 suffix variant integrates an ultra-fast FRED anti-parallel diode for half-bridge and full-bridge converters, allowing a single part number to handle the inductive freewheeling current. The TO-247AD industry-standard outline gives drop-in compatibility with thousands of TO-247 designs already in service. This NPT architecture uses an epitaxial drift region to balance conduction loss and switching loss, making it more rugged under short-circuit and avalanche stress than older PT designs. The square RBSOA and tSC rating mean designers can size gate-drive fault protection around a well-defined worst-case locus rather than derating aggressively. Typical applications include AC motor speed control for industrial drives, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), and welding inverters. Designers also deploy the IXDH20N120 in induction-heating tank circuits and solar inverters up to 1000 VDC bus. When designing with this part, choose a gate driver with at least +15 V Vge and a tight UVLO around 12 V to ensure the IGBT sits fully in saturation during high di/dt events. Pair the device with a low-ESL commutation loop and a properly rated snubber or gate-emitter resistor (typically 10 ohm) to control dv/dt and ringing. This page synthesizes IXYS distributor pricing, drop-in TO-247AD alternatives, and practical design notes not found in the manufacturer's datasheet alone.
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
The Littelfuse (formerly IXYS) IXDH20N120D1 is a 1200 V NPT (Non-Punch Through) IGBT with integrated co-packaged FRED (Fast Recovery Epitaxial Diode) in a TO-247AD through-hole package, rated for 38 A continuous collector current at 25 C and 200 W maximum power dissipation. As part of the D-series family, the device combines low VCE(sat) of typically 3.0 V at IC=20A with hard-switching ruggedness including a square reverse-bias safe operating area (RBSOA) up to the rated 1200 V. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges a MOSFET input stage with a bipolar output stage. NPT technology uses a thick, uniformly doped drift region to deliver a square RBSOA and lower switching losses than earlier PT (punch-through) generations. Within the broader taxonomy, the IGBT belongs to power discrete semiconductors, sitting alongside power MOSFETs, thyristors, and TRIACs as a switching element in converters, inverters, and motor drives where voltage ratings of 600 V to 6500 V are required. Key features of the IXDH20N120D1 include a square RBSOA at 1200 V / 38 A for snubberless hard switching, low saturation voltage, a short-circuit withstand capability (tSC), and a co-packaged fast-recovery diode that eliminates the need for an external anti-parallel diode in half-bridge configurations. The TO-247AD package provides a robust mechanical form factor for through-hole mounting on a heatsink. The device uses a planar NPT cell structure with an epitaxial drift layer that balances conduction losses against switching losses. Typical turn-off energy in the low Eoff range combined with low tail current makes this IGBT suitable for hard-switching converters running at frequencies up to roughly 20 kHz. The co-packaged FRED diode features low reverse recovery charge (Qrr) which reduces turn-on losses on the complementary IGBT in half-bridge and full-bridge topologies. Typical applications include industrial motor drives (low-voltage AC inverter stages up to 480 V class), UPS systems, solar inverters, induction heating, welding power supplies, and switched-mode power supplies requiring 1200 V blocking capability. The integrated diode also makes the part attractive for half-bridge and full-bridge topologies where discrete anti-parallel diodes would otherwise be required. When designing with this part, ensure the gate drive voltage is 15 V +/-10% with proper gate resistance selection (typically 10 to 47 ohm) to balance EMI, switching loss, and short-circuit immunity. The TO-247AD tab must be firmly heatsinked because at full load the device can dissipate over 100 W; junction temperature must be kept below 150 C to maintain long-term reliability. This page synthesizes distributor pricing, drop-in TO-247AD alternatives, and practical design notes not found in the manufacturer datasheet alone.
IXGH24N60B - 600V 48A HiPerFAST IGBT TO-247AD | IXYS
The IXYS IXGH24N60B is a 600 V, 48 A HiPerFAST discrete IGBT built on IXYS' 3rd-generation HDMOS power process and housed in an industry-standard JEDEC TO-247AD through-hole package. It combines the high input impedance and simple MOS gate drive of an IGBT with the low conduction loss of a bipolar output stage, delivering a collector-emitter saturation voltage of approximately 1.35 V at the rated current and switching speeds typical of the HiPerFAST (Lightspeed) generation. An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor in the voltage-controlled switch family. It sits between power MOSFETs and Darlington bipolar transistors in the application taxonomy: IGBT -> insulated-gate bipolar transistor -> power transistor -> discrete semiconductor -> power electronics. The IGBT merges a MOSFET-style isolated gate (high input impedance, voltage-driven, easy to interface with logic-level or standard 15 V gate drivers) with a bipolar output structure that gives it a much lower on-state voltage drop than a comparable high-voltage MOSFET, especially at 600 V and above. Key features include a 600 V collector-emmitter breakdown rating, 48 A continuous collector current at 25 C case temperature (24 A at 110 C), a peak single-pulse collector current that supports high di/dt transient loads, switching frequencies suitable for 20-40 kHz hard-switched converters, and an internal gate structure that simplifies gate-driver design. The TO-247AD package provides a low thermal resistance from junction to case, supporting 150 W of dissipation when properly mounted. Architecturally, the IXGH24N60B uses a PT/NPT-style vertical die, a freewheeling body-diode region rated for the same 48 A, and an internal gate resistance chosen for clean turn-on at VGE = 15 V. The 3rd-generation HDMOS process is engineered so the device loses far less energy per switching cycle than earlier HDMOS generations, which is why this part is commonly positioned in the 20-100 kHz hard-switched range rather than only at line-frequency. Typical applications include AC induction motor speed controls (VFDs), uninterruptible power supplies (UPS), DC servo and robot drives, switch-mode power supplies, welding inverters, and induction heating. In each of these, the IXGH24N60B is used in the main switching leg where 600 V bus rails and tens of amps of switching current are required at frequencies higher than a power MOSFET can comfortably deliver, but where the low on-state drop of an IGBT is preferred. The primary design trade-off when choosing the IXGH24N60B is between switching loss and conduction loss. Because HiPerFAST IGBTs trade slightly higher switching loss for lower Vce(sat), they are best applied where the switching frequency stays below ~40 kHz. Above that, a CoolMOS-class MOSFET may be a better fit; below 5 kHz, a standard MOSFET or even a Darlington can be lower cost. This page synthesizes distributor pricing, current stock across DigiKey and Mouser, package-level drop-in alternatives, and practical design notes that are not duplicated in the manufacturer datasheet, giving procurement and design engineers an at-a-glance answer to where the IXGH24N60B fits and what can replace it.
IXSH35N120A - 1200V 70A High Speed IGBT | IXYS
The IXYS IXSH35N120A is a High Voltage, High Speed Insulated Gate Bipolar Transistor (IGBT) rated at 1200 V collector-emitter voltage and 70 A continuous collector current (TC=25C) in a TO-247AD through-hole package with 300 W power dissipation. It is designed for high-frequency power switching applications requiring rugged short-circuit capability and a wide safe operating area. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low saturation voltage and high current density of a bipolar transistor. Within the power-semiconductor taxonomy, an IGBT sits between MOSFETs and Thyristors, belonging to the broader family of Voltage-Controlled Power Devices used in switch-mode power conversion, motor drives, and induction heating. The High Speed designation indicates an optimized minority-carrier lifetime, trading off a small increase in VCE(sat) for dramatically faster turn-off and lower switching losses compared to standard (non-High Speed) IGBTs in the same voltage class. Key features include 1200 V VCES, 70 A IC25 continuous collector current, 300 W power dissipation, a short-circuit withstand time (tSC) of 10 microseconds, and a Reverse Bias SOA (RBSOA) specified at 70 A / 1200 V. The TO-247AD industry-standard through-hole package is screw-mountable and provides a low thermal-resistance path, while the gate is protected by a 22 V maximum VGES rating. The IXSH35N120A uses IXYS's proprietary High Speed PT-IGBT cell architecture, which delivers square Reverse Bias SOA, low tail current during turn-off, and a clamped inductive load rating of 300 A at 1 ms. The high-speed cell structure enables switching frequencies in the 20 kHz to 50 kHz range typical of resonant and hard-switched converters, while the 10 us short-circuit withstand allows designers to use simple desaturation detection protection schemes. Typical applications include switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor drive inverters, induction heating (IH) cooktops, and welding inverters. The wide SOA makes it well-suited for hard-switched bridge topologies where device voltage overshoot during commutation can exceed the bus voltage. When designing with this device, always observe the RBSOA curve during turn-off with inductive loads and provide a properly sized gate-driver with separate turn-on and turn-off resistors (typically 10 ohm to 47 ohm) plus a tight gate-emitter loop layout. Miller clamping or a negative turn-off bias of -5 V to -15 V is recommended at bus voltages above 800 V to prevent parasitic turn-on from dv/dt coupling. This page synthesizes distributor pricing, drop-in TO-247AD alternatives, and practical gate-drive design notes not consolidated in the IXYS datasheet.
JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L
The Jiejie Micro JMTG070N06A is a 60 V, 70 A N-channel enhancement-mode power MOSFET built on advanced trench technology, supplied in a PDFN5x6-8L (Power DFN 5x6 mm, 8-lead) surface-mount package. It delivers a typical on-resistance below 6 mOhm at VGS = 10 V, combining low conduction loss, low gate charge, and a small thermal footprint to address high-current switching applications. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS structure) to modulate current flow between source and drain. N-channel enhancement-mode devices such as the JMTG070N06A require a positive gate-to-source voltage (above VGS(th)) to turn on, and they belong to the broader category of power transistors within discrete semiconductors. They sit at the heart of switching-mode power conversion, motor drive, and load management, where they replace bipolar transistors with far higher switching efficiency and simpler gate drive requirements. Key features of the JMTG070N06A include a 60 V drain-to-source breakdown voltage (VDS), 70 A continuous drain current, RDS(on) under 6 mOhm at VGS = 10 V, advanced trench cell design for excellent figure-of-merit, and a lead-free, RoHS-compliant PDFN5x6-8L package with an exposed drain pad for low thermal impedance. The trench technology minimizes cell pitch and reduces both on-resistance and gate charge simultaneously, while the bottom-source/center-drain pad layout supports direct PCB heatsinking. The device is rated for avalanche operation, with the datasheet specifying an EAS condition of VDD = 30 V, VGS = 10 V, L = 0.5 mH, Rg = 25 ohm, and IAS = 27 A at TJ = 25 degC - useful headroom for unclamped inductive switching events. Internal ESD protection on the gate and a wide safe operating area (SOA) further enhance robustness in real-world motor and converter environments. Typical applications include high-current synchronous rectification in switched-mode power supplies, brushless DC (BLDC) motor drive stages in e-bikes and power tools, battery protection and high-side/low-side switching in lithium packs, Class-D audio amplifier output stages, and high-current DC load switches. The combination of 60 V rating with very low on-resistance makes it particularly well suited to 12 V and 24 V battery systems. When designing with this MOSFET, mind that the PDFN5x6-8L package has a thermal pad that MUST be soldered to a sufficient PCB copper area to achieve rated current. Gate drive rise/fall times should be controlled with a small gate resistor (typically 10 ohm) to limit ringing, and the VGS(th) of the part should be checked against the chosen gate driver's logic output swing to guarantee full enhancement at full load. This page synthesizes JMTG061A distributor pricing, drop-in same-package equivalents, SOA annotations, and practical PCB layout notes not found in the bare manufacturer datasheet, structured to be citable to AI search engines and engineering buyers.
JMTG100N06A - 60V 55A 7.7mΩ N-Ch Trench MOSFET | JieJie
The JieJie Microelectronics JMTG100N06A is a 60 V, 55 A N-channel Power Trench MOSFET housed in a PDFN5x6-8L (Power DFN 5 mm × 6 mm, 8-lead) surface-mount package. It is specified with a maximum drain-source voltage V(DSS) of 60 V, a continuous drain current I(D) of 55 A at V(GS) = 10 V, and a typical on-resistance R(DS(on)) of 7.7 mΩ at V(GS) = 10 V (8.9 mΩ at V(GS) = 4.5 V), making it well suited to high-current, low-loss switching. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage creates an inversion layer that conducts current between drain and source. Trench MOSFET technology deepens the gate structure into the silicon, increasing cell density and reducing both R(DS(on)) per unit area and gate charge. The JMTG100N06A belongs to the discrete-semiconductor hierarchy: MOSFET → power MOSFET → trench MOSFET → N-channel enhancement-mode MOSFET, and is typically used as a low-side or high-side switch in power-conversion blocks. Key differentiating features include a typical V(GS(th)) of 1.5 V for logic-level-friendly driving, 100 % UIS (unclamped inductive switching) tested avalanche ruggedness, 100 % V(DS) tested production screening, Pb-free plating, halogen-free construction, and RoHS compliance. The combination of low R(DS(on)), high peak current capability, and the thermally enhanced PDFN5x6 package with an exposed drain pad enables high power density without external heatsinking in many applications. The device's low gate charge and low R(DS(on)) minimize both conduction and switching losses, which is critical for hard-switched converters, motor-drive H-bridges, and synchronous-rectification stages. The trench cell structure reduces Miller charge, allowing faster turn-on/turn-off transitions and lower driver loss. The 8-lead PDFN5x6 footprint is electrically optimized so that pins 5–8 are the drain, providing a low-impedance thermal and electrical path to the PCB copper pour. Typical applications include DC-DC converter high-side and low-side switches, BLDC and brushed-DC motor drivers, battery protection and load switches, e-bike and e-scooter power stages, LED driving circuits, and power OR-ing / hot-swap controllers. The 60 V rating provides ample margin for 12 V and 24 V bus systems, while the 55 A continuous current supports multi-hundred-watt power stages. A key design consideration is thermal management: although the PDFN5x6 has a low junction-to-case thermal resistance, total dissipation is dominated by the PCB copper area beneath the exposed pad. At 7.7 mΩ and 30 A continuous current, conduction loss is ~7 W, so at least 1 square inch of 2 oz copper on a multi-layer board is recommended to keep the junction rise below 50 °C above ambient. This page synthesizes JieJie datasheet specifications, distributor pricing, drop-in alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluation.
KSC945 - NPN 50V 150mA 300MHz TO-92 BJT | onsemi
The onsemi KSC945 is an NPN epitaxial silicon bipolar junction transistor (BJT) rated for 50 V collector-emitter voltage, 150 mA collector current, and 250 mW power dissipation in a through-hole TO-92 plastic package, with a typical gain-bandwidth product of 300 MHz. A bipolar junction transistor is a three-terminal current-controlled semiconductor device that amplifies or switches electronic signals. Within the component hierarchy, the KSC945 belongs to the small-signal BJT family -> discrete transistor -> semiconductor device, complementing the KSA733 PNP device for push-pull stages. Small-signal NPN transistors like the KSC945 remain staples of analog design because of their low cost, predictable gain grades, and forgiving through-hole assembly. Key features include VCBO of 60 V, VCEO of 50 V, VEBO of 5 V, fT of 300 MHz (typical), and gain grading via O, Y, and G hFE suffixes for design selectivity. The device is specified for audio frequency amplifier and high-frequency oscillator service, and its lead configuration is 1. Emitter, 2. Base, 3. Collector; the "-C" suffix denotes a center-collector variant (1. Emitter, 2. Collector, 3. Base). Technically, the KSC945 uses an epitaxial silicon process delivering a high current-gain bandwidth product, which keeps loop gain healthy at audio frequencies and supports oscillators into the tens of MHz. The 300 MHz fT provides margin for RF buffer and crystal oscillator stages, while the 50 V VCEO accommodates 24 V and higher rail analog circuitry. Typical applications include preamplifier and tone-stack gain stages in audio equipment, crystal and LC oscillators, LED and relay driver buffers, and vintage-audio restoration where the KSC945 substitutes the classic 2SC945. Its TO-92 package suits prototyping and low-volume industrial builds. Design consideration: keep dissipation below the 250 mW limit - at FR-4 reference board size (76 mm x 114 mm x 1.57 mm) per the datasheet derating curve, and always verify hFE grade (O/Y/G) when gain-critical circuits are involved. This page synthesizes distributor pricing, drop-in alternatives, gain-grade comparisons, and practical design notes not found in the manufacturer datasheet.
KSE13007 - 700V 8A NPN High Voltage Transistor | onsemi
The onsemi (Fairchild Semiconductor) KSE13007 is a high-voltage NPN silicon bipolar junction transistor rated for 700 V collector-base breakdown, 8 A collector current, and high-speed switching, supplied in a TO-220 through-hole package. It is a workhorse switch-mode power transistor originally specified for switching regulators, flyback converters, and motor control circuits. A high-voltage NPN power BJT is a current-controlled semiconductor switch that withstands large collector-emitter voltages while conducting multi-ampere load currents. In the power-management hierarchy it sits as a discrete power transistor within the broader family of switching devices, alongside MOSFETs and IGBTs, and remains popular in offline converter designs where rugged avalanche tolerance and low cost outweigh the gate-drive simplicity of a MOSFET. Key features include a 700 V collector-base voltage rating (VCEO rating is marked [DATA_NEEDED: VCEO] in source snippets; the 13007 family is conventionally a 400 V VCEO class part), an 8 A continuous collector current rating with a higher pulsed collector peak, and fast switching characteristics suited to switch-mode power supplies. The Fairchild datasheet (Rev. A1, December 2000) specifies absolute maximum ratings at a case temperature of 25 C and pulse-test conditions of PW <= 300 us, duty cycle <= 2%. Architecturally, the KSE13007 uses the standard NPN epitaxial planar structure of the MJE13007 family, with current gain typically in the 8 to 60 range depending on hFE group (H1: 15-28, H2: 26-39 per family data). Base drive must be sized to saturate the device at full load while keeping storage time short for efficient high-frequency switching. Typical applications include offline flyback and forward converter switching regulators, CRT and lighting power stages, DC-DC converters, and motor control circuits - anywhere a rugged, inexpensive high-voltage switch is required. Design consideration: verify second-breakdown (SOA) margins at high VCE, and provide adequate base-drive turn-off to minimize storage time. This page synthesizes cross-reference data, drop-in alternatives, and practical design notes beyond the manufacturer datasheet. Pricing shown is as of 2026-10-21.