ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
N.º de pieza: ISZ019N03L5SATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.86 | $8,60 |
| 100 | $0.74 | $74,00 |
| 500 | $0.66 | $330,00 |
| 1.000 | $0.58 | $580,00 |
| 5.000 | $0.48 | $2.400,00 |
ISZ019N03L5SATMA1 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain. Power MOSFETs sit in the discrete semiconductor hierarchy between small-signal transistors and IGBTs, optimized for fast switching at voltages typically from 12V to 300V. The Infineon OptiMOS family specifically targets synchronous rectification, OR-ing, hot-swap, and battery-protection applications where ultra-low RDS(on) and small footprint are mandatory.
Key specifications include 1.9 mΩ typical RDS(on) at 10V VGS, a gate threshold (VGS(th)) of 2V typical with ±20V maximum gate rating, a total gate charge (Qg) of 44 nC at 10V, and an input capacitance (Ciss) of 2800 pF at 15V. The device is rated for avalanche operation and 100% Rg-tested, providing robust performance in hard-switching topologies. The PG-TSDSON-8-FL package offers superior thermal performance through the exposed die-attached pad.
Typical applications for the ISZ019N03L5SATMA1 include synchronous rectification in telecom and server DC-DC converters, battery management and protection circuits in 12V Li-ion packs, OR-ing and hot-swap controllers, motor drive half-bridges in 12V/24V systems, and high-current USB Power Delivery (PD) load switches. Its low gate charge and tight threshold distribution also make it well suited to high-frequency point-of-load converters.
When designing with this MOSFET, minimize parasitic source inductance by keeping the source Kelvin connection short, and use a 10kΩ gate-source resistor to prevent unwanted turn-on from dv/dt coupling. For high-current applications, ensure the PCB copper area under the exposed pad is maximized to keep junction temperature below the 175°C absolute maximum.
Alternativas directas para ISZ019N03L5SATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con ISZ019N03L5SATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, MSL Level, Operating Temperature Range, Gate Threshold Voltage (VGS(th)).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC009NE2LS5IATMA1
✅ Sustitución directa✓ En stock
$1.02 / unidad
Ver hoja de datos →BSC028N06NSTATMA1
✅ Sustitución directa✓ En stock
$0.4 / unidad
Ver hoja de datos →BSC014N04LSATMA1
✅ Sustitución directa✓ En stock
$0.74 / unidad
Ver hoja de datos →BSC014N04LSTATMA1
✅ Sustitución directa✓ En stock
$0.41 / unidad
Ver hoja de datos →BSC0502NSIATMA1
✅ Sustitución directa✓ En stock
$0.85 / unidad
Ver hoja de datos →ISZ019N03L5SATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 22 A |
| Continuous Drain Current (ID) at TC=25C | 40 A |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) |
| Gate-Source Voltage Rating (VGS) | ±20 V |
| Total Gate Charge (Qg) | 44 nC at VGS=10V |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V |
| Encapsulado | PG-TSDSON-8-FL (5x6 mm) |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (TJ max) |
| Nivel MSL | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | Compliant |
| Avalanche Rated | Yes |
| RG-tested | 100% |
Configuración de pines de ISZ019N03L5SATMA1
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — MOSFET source connection |
| Pin 3 | Source — MOSFET source connection (tied to pin 2) |
| Pin 4 | Kelvin Source — Kelvin source connection for gate drive return |
| Pin 5 | Drain — MOSFET drain connection |
| Pin 6 | Drain — MOSFET drain connection |
| Pin 7 | Drain — MOSFET drain connection |
| Pin 8 | Drain — MOSFET drain connection |
Área de funcionamiento seguro
Aplicaciones típicas
ISZ019N03L5SATMA1 es adecuado para 6 aplicacións: Synchronous Rectification in DC-DC Converters, Battery Management and Protection (12V Li-ion), OR-ing and Hot-Swap Controllers, Motor Drive Half-Bridges (12V/24V), USB Power Delivery (PD) Load Switch, E-Fuse and Active Circuit Protection.
Synchronous Rectification in DC-DC Converters
The ISZ019N03L5SATMA1 is ideal for the synchronous rectifier (SR) position in 12V-input buck converters used in telecom and server point-of-load (POL) rails. Its 1.9 mΩ RDS(on) at VGS=10V minimizes conduction loss at high duty cycles, while the 44 nC Qg enables 500 kHz+ switching with manageable driver losses. Placed on the low-side of a half-bridge with a complementary controller, the PG-TSDSON-8-FL exposed pad keeps junction rise below 50°C at 15A continuous. Compared to Schottky diode rectification, this MOSFET approach cuts rectification loss by 50-70% in high-current POL designs.
Recomendado
Battery Management and Protection (12V Li-ion)
In 12V Li-ion battery packs and battery management systems (BMS), the ISZ019N03L5SATMA1 serves as the high-side or low-side disconnect MOSFET. Its 30V VDS rating comfortably covers the 16.8V maximum charge voltage with headroom for inductive transients, while the 22A continuous current handles 5C discharge of typical 4Ah packs. The ±20V VGS rating tolerates the dv/dt events that occur during battery cut-off. The PG-TSDSON-8-FL package fits in the compact BMS PCB area, and the exposed pad conducts heat directly to the battery housing or chassis.
Recomendado
OR-ing and Hot-Swap Controllers
The ISZ019N03L5SATMA1 is well suited to redundant power OR-ing and hot-swap circuits in telecom (-48V-to-bus) and server (12V distribution) applications. Its 1.9 mΩ RDS(on) limits steady-state voltage drop on the OR-ing path, while the 30V VDS supports both 12V and 20V PD rails. The fast body-diode reverse recovery reduces switching losses during hot-swap insertion. Compared to a Schottky OR-ing diode, this MOSFET solution reduces power dissipation by 60-80% at 10A load, easing thermal design of compact OR-ing boards.
Recomendado
Motor Drive Half-Bridges (12V/24V)
In 12V and 24V brushless DC (BLDC) motor drive half-bridges, the ISZ019N03L5SATMA1 functions as both the high-side and low-side switch in H-bridge topologies. The 40A pulsed current rating (TC=25°C) supports inrush and stall conditions of small DC motors, while the 1.9 mΩ RDS(on) keeps copper loss low during continuous rotation. The PG-TSDSON-8-FL package enables compact PCB layouts in space-constrained motor-control designs like robotics and small appliances. Pair with a half-bridge gate driver like the IRS2181STRPBF for full H-bridge control.
Recomendado
USB Power Delivery (PD) Load Switch
USB Power Delivery 3.1 specifications require load switches capable of carrying 5A at 20V (100W) and higher with minimal conduction loss. The ISZ019N03L5SATMA1's 30V VDS, 22A continuous current, and 1.9 mΩ RDS(on) make it ideal for PD source-side and sink-side load switches. The low Qg (44 nC) supports fast VBUS turn-on/off sequencing required by USB-IF PD compliance tests. In Type-C PD applications, the exposed PG-TSDSON-8-FL pad conducts heat efficiently to inner PCB layers, eliminating the need for an external heatsink.
Recomendado
E-Fuse and Active Circuit Protection
The ISZ019N03L5SATMA1 can be used as the switching element in electronic fuse (e-fuse) and active circuit protection modules for 12V/20V distribution. Its 30V VDS rating and 22A continuous current support protection of downstream loads from overcurrent and short-circuit events. Combined with a current-sense amplifier and gate driver, the FET provides sub-microsecond disconnect on fault detection. The exposed-pad package enables sustained 20A operation in compact protection modules used in industrial and telecom equipment.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para ISZ019N03L5SATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC009NE2LS5IATMA1 | BSC028N06NSTATMA1 | BSC014N04LSATMA1 | BSC014N04LSTATMA1 | BSC0502NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (5x6 mm) - same | PG-TSDSON-8-FL (5x6 mm) - same | PG-TSDSON-8-FL (5x6 mm) - same | PG-TSDSON-8-FL (5x6 mm) - same | PG-TSDSON-8-FL (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 60 V | 40 V | 40 V | 30 V |
| RDS(on) at VGS=10V (typical) | 1.9 mΩ | 0.9 mΩ | 2.8 mΩ | 1.4 mΩ | 1.4 mΩ | 5 mΩ |
| Family | OptiMOS 5 30V | OptiMOS 5 30V | OptiMOS 5 60V | OptiMOS 5 40V | OptiMOS 5 40V | OptiMOS 5 30V |
Diferenciadores clave
- Lowest RDS(on) in the 30V PG-TSDSON-8-FL package family (frente a BSC0502NSIATMA1)
- Lower gate charge than absolute lowest-RDS(on) alternatives (frente a BSC009NE2LS5IATMA1)
- 30V voltage class optimized for 12V/20V PD applications (frente a BSC028N06NSTATMA1)
Notas de diseño
Estimated: At 15A continuous and RDS(on)=1.9 mΩ, conduction loss is approximately P = I² × RDS(on) = 15² × 0.0019 = 0.43 W. The PG-TSDSON-8-FL package with an exposed pad on a 1 oz copper pour of 100 mm² achieves θJA of approximately 50°C/W, yielding a junction temperature rise of about 21°C above ambient. For continuous operation at the 22A TA rating, the PCB copper area must be expanded to at least 300 mm² to maintain TJ below 150°C. Always provide multiple thermal vias under the exposed pad to inner copper planes.
Minimize parasitic source inductance by routing the gate drive return directly to the Kelvin Source pin (pin 4), not to the power source pins (pins 2-3). Keep the gate drive loop area under 5 mm² to prevent dv/dt-induced turn-on in high-frequency switching. Place a 10 kΩ gate-source resistor within 2 mm of the gate pin to dampen parasitic oscillation. For switching frequencies above 500 kHz, add a ferrite bead on the gate drive path to suppress ringing.
Do not exceed the ±20V VGS absolute maximum rating; use a gate-source Zener clamp (typically 12V) when driving from a 15V supply. Verify the body diode reverse recovery (trr) in hard-switched topologies - the ISZ019N03L5S OptiMOS 5 family has optimized trr but still requires dead-time control. Never operate at VDS exceeding 30V even for transient pulses; avalanche ratings are for inductive clamping only, not sustained overvoltage.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications consult Infineon automotive-grade OptiMOS portfolio. MSL Level 1 per JEDEC J-STD-020.
