Circuitos integrados

W9425G6JH-5

W9425G6JH-5 - 256Mbit DDR400 SDRAM, 16Mx16, 2.5V TSOP-II | Winbond

The Winbond W9425G6JH-5 is a 256 Mbit DDR SDRAM organized as 4M x 4 banks x 16 bits, housed in a 66-pin TSOP-II surface-mount package and rated for DDR400/CL3 operation at 2.5V. The -5 speed grade delivers a peak data bandwidth of up to 400 Mwords per second under the JEDEC DDR-I specification, making it suitable for legacy embedded graphics, networking line cards, set-top boxes, and industrial controllers that required double-data-rate throughput in the mid-2000s. The device is fabricated in a CMOS process and includes on-chip refresh, burst counter, and self-refresh support. A DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both the rising and falling edges of the clock, effectively doubling the peak throughput of a single-data-rate SDRAM of the same bus frequency. DDR-I sits at the base of the DDR family hierarchy (DDR -> DDR SDRAM -> volatile memory -> DRAM -> semiconductor memory) and was standardized by JEDEC as the JESD79 specification family. Compared to its predecessor SDR SDRAM, DDR-I uses a 2n-prefetch architecture, SSTL-2 I/O, and requires a 2.5V supply for VDD plus a 2.5V supply for VDDQ. Key specifications of the W9425G6JH-5 include 4,194,304 words per bank across 4 banks, a 16-bit data bus width, a CAS Latency (CL) of 3 at DDR400, a 66-pin TSOP-II mechanical outline measuring 0.400 inch wide, and the -5I industrial temperature grade option that supports -40C to +85C. The chip operates from a single 2.5V VDD supply with a separate VDDQ rail terminated to VTT for the SSTL-2 interface. Internally, the device uses a 4-bank architecture with dual-bank operation and supports burst lengths of 2, 4, 8, and full page. The W9425G6JH-5 is constructed with a prefetch I/O scheme synchronized to the internal SDRAM clock, achieving DDR400 compliance when paired with a host controller that drives the SSTL-2 signaling at 200 MHz with 3n CBR. The 4-bank architecture allows interleaved operations across banks while one bank is being precharged, improving effective bandwidth in streaming workloads. Self-refresh mode permits low-power standby retention, making the device suitable for battery-backed or low-duty-cycle embedded systems. Typical applications for the W9425G6JH-5 include DDR1 main memory in industrial PCs, networking switches, digital video recorders, and printer controllers. The wide 16-bit bus simplifies interface to ASICs and low-cost processors without requiring multiple narrow-DRAM chips. Designers choose this Winbond part where Micron, Samsung, and Nanya equivalents are also qualified in 2018. When designing with the W9425G6JH-5, place VTT termination resistors within 1 inch of the DQ/DQS pins and follow JEDEC DDR-I routing guidelines. Decouple VDDQ with 0.1uF and 10uF capacitors near each pin and route DQS in matched-length pairs with the byte lane. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable single reference for sourcing and design-in of the W9425G6JH-5.

USD $2,40 En stock

W948D6FBHX5I

W948D6FBHX5I - 256Mb LPDDR SDRAM 200MHz | Winbond

The Winbond Electronics W948D6FBHX5I is a 256 Mbit Mobile Low-Power DDR (LPDDR / mobile DDR) SDRAM memory IC organized as 4M words x 4 banks x 16 bits, operating at up to 200 MHz with a 5 ns clock cycle, supplied in a 60-ball VFBGA (8x9 mm, 0.80 mm ball pitch) package. LPDDR SDRAM is a volatile DRAM variant optimized for battery-powered and thermally constrained systems. Unlike standard DDR DRAM, mobile LPDDR uses a 1.8 V core supply, deeper power-down modes, a temperature-compensated self-refresh (TCSR) feature, and partial-array self-refresh (PASR) to cut standby current. In the memory hierarchy it sits between SRAM and standard DDR SDRAM, forming the main-memory tier of embedded SoC platforms. Key features of the W948D6FBHX5I include the x16 parallel data interface, which reduces bus width and pin count versus x32 parts, a 200 MHz clock rate supporting LPDDR-200 throughput of 400 MB/s per pin pair, and the industrial temperature variant denoted by the I suffix in the ordering code. The VFBGA ball-grid package minimizes board area at 72 mm2 and improves signal integrity through short, controlled-impedance ball interconnects. Internally the device uses four independent banks with a burst length of 2, 4, or 8, allowing efficient random and sequential access. Power management modes include deep power-down, self-refresh, and power-down, with typical operating current in the tens of milliamp range and standby current in the microamp range when self-refresh is enabled. Typical applications include industrial HMI and gateways, portable medical instruments, telematics and tracking devices, and embedded Linux/RTOS systems where an application processor requires 32 MB of low-power main memory. When designing with this part, match the controller timing registers to the 5 ns cycle time and route the address/control bus as a matched-length fly-by or point-to-point group within the 1.8 V SSTL-18-style I/O regime; series termination is usually unnecessary at this speed for short traces. This page consolidates distributor availability, pricing tiers, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.

USD $1,15 En stock

W949D2DBJX5I

W949D2DBJX5I - 512Mb LPDDR SDRAM 200MHz x32 | Winbond

The Winbond Electronics W949D2DBJX5I is a 512Mbit Low Power DDR (LPDDR / Mobile DDR) SDRAM memory IC with a x32 data interface, 200 MHz clock rate (5 ns clock cycle), fabricated on a 46nm DRAM process and housed in a 90-ball VFBGA (8x13 mm) package, qualified for the industrial temperature range. An LPDDR SDRAM is a mobile-optimized variant of double-data-rate synchronous DRAM. Like all DRAM, it stores each bit as charge on a capacitor that must be periodically refreshed, but LPDDR devices reduce core and I/O operating voltage and add low-power modes such as Deep Power Down and Self Refresh so that battery-powered systems can keep volatile memory alive with minimal energy. In the memory hierarchy, the W949D2DBJX5I sits as main system memory, positioned between embedded SRAM caches and non-volatile flash storage. Key features include 512Mbit total density organized for a x32-wide parallel bus, a 200 MHz maximum clock frequency delivering effective double-data-rate transfers on both clock edges, and the space-saving 90-VFBGA 8x13 mm ball grid array that minimizes board area and improves signal integrity for high-speed memory routing. The I temperature suffix designates industrial-grade operating temperature support, and the 46nm process keeps core current low. Technically, the device uses double data rate signaling on the DQ pins, source-synchronous data strobes (DQS) for capture, and programmable mode registers for CAS latency, burst length and burst type configuration per the LPDDR (Mobile DDR) SDRAM standard. Bank and row/column addressing follow the standard LPDDR command set with ACTIVATE, READ, WRITE, PRECHARGE, REFRESH and mode register set commands. Typical applications include portable and industrial embedded systems: main memory for ARM-based application processors, networking and communication modules, telematics and data-loggers, and human-machine interface boards where 64 MByte of low-power DRAM is sufficient. Design consideration: LPDDR shares command/address lines among devices, so careful length-matched routing and proper termination of the 1.8 V-class signaling environment are essential; verify the controller supports the selected CAS latency and burst configuration before layout. This page synthesizes distributor pricing, drop-in family alternatives, pin-level guidance and practical design notes not consolidated in the manufacturer datasheet.

USD $0,95 En stock

W949D2DBJX5I-TR

W949D2DBJX5I-TR - 512Mb LPDDR SDRAM 200MHz x32 | Winbond

The Winbond Electronics W949D2DBJX5I-TR is a 512Mbit Mobile LPDDR SDRAM memory IC with a 32-bit parallel data interface, 200 MHz clock frequency, 5 ns access time, and a 90-ball VFBGA (8x13 mm) package, qualified for the -40C to +85C industrial temperature range. Mobile LPDDR SDRAM is a low-power variant of Double Data Rate synchronous DRAM optimized for battery-powered and thermally constrained systems. Within the memory hierarchy, SDRAM sits under the volatile RAM family, distinguished from asynchronous DRAM by a clocked interface and from standard DDR by reduced core voltage, lower I/O swing, and power-saving features such as deep power-down and temperature-compensated self-refresh. Key features include a 1.7 V to 1.95 V supply range (nominal 1.8 V), x32 organization at 512 Mbit density, a 200 MHz clock rate with 5 ns access time, and the compact 90-VFBGA footprint that minimizes PCB area in portable designs. The industrial temperature grade (-40C to +85C) extends usability from consumer handhelds into industrial and networking equipment. Fabricated on a 46 nm DRAM process, the device achieves a favorable balance of density, power and cost. The double-data-rate interface transfers data on both clock edges, doubling effective bandwidth relative to SDR SDRAM at the same clock. Standard LPDDR command set support (CKE-based power-down, self-refresh, mode register programming) allows straightforward controller integration with common SoCs and application processors. Typical applications include embedded industrial controllers, networking and communication equipment, telematics and navigation boxes, portable instrumentation, and battery-buffered data loggers where 64 MByte of low-power program/data memory is sufficient. Designers should observe LPDDR signal integrity requirements: length-match the differential clock to address/command traces, terminate per the datasheet guidelines, and provide a clean 1.8 V core rail with adequate decoupling at each VDD/VDDQ pin pair of the BGA array. This page synthesizes distributor pricing, family alternatives, and practical LPDDR layout guidance not consolidated in the manufacturer datasheet alone. Specifications above are drawn from verified distributor listings (DigiKey, Mouser, JLCPCB) as of 2026-09-14.

USD $2,05 En stock

W971GG6JB-25I

W971GG6JB-25I - 1Gb DDR2 SDRAM, 800MHz, Industrial | Winbond

The Winbond W971GG6JB-25I is a 1 Gbit DDR2 SDRAM organized as 8M words x 8 banks x 16 bits, housed in an 84-ball WBGA package (8 x 12.5 mm). The -25I speed grade supports a clock frequency of 400 MHz (DDR2-800) with data rates up to 800 Mb/s/pin, while the underlying die family extends to DDR2-1066 for higher-grade speed bins. A DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM) is a volatile dynamic random-access memory that transfers data on both clock edges, doubling the effective bus rate versus DDR1. It belongs to the hierarchy SDRAM -> DRAM -> volatile memory -> semiconductor, and is widely used as main working memory in embedded systems, set-top boxes, networking equipment, automotive infotainment, and graphics subsystems. The 'I' suffix indicates the industrial temperature grade (-40 C to +85 C). Key features of the W971GG6JB-25I include 1.8 V SSTL_18 compatible I/O, on-die termination (ODT), programmable CAS latency (typically 5/6 for DDR2-800), and a 4-bit prefetch architecture. The device supports burst lengths of 4 and 8, on-die DLL for clock alignment, and selectable read/write termination strengths. The WBGA-84 package is JEDEC standard for DDR2 x16 devices, enabling drop-in compatibility with other vendors' x16 DDR2 SDRAMs of the same density and speed grade. Architecturally, the W971GG6JB uses 8 internal banks to enable concurrent row activation across banks, hiding precharge and activate latencies. The -25I bin is qualified for industrial operation and is suitable for automotive non-safety applications where AEC-Q100 is not mandated. The 'A' and 'K' suffixes in the family target full automotive AEC-Q100 qualification. Typical applications include automotive infotainment head units, industrial HMI panels, IPTV/set-top box main memory, networking line cards, and printer image buffers. It is also used in point-of-sale terminals and ruggedized industrial PCs that require a robust, JEDEC-standard DDR2 footprint. When designing with this device, follow the JEDEC DDR2 layout guidelines: maintain matched-length trace pairs for DQ/DQS, place VTT termination at the middle of the bus, and provide proper decoupling (typically 0.1 uF plus bulk) near each VDD/VSS ball. A 50 ohm impedance for SSTL_18 signaling is recommended. This page synthesizes distributor pricing, same-family DDR2 alternatives, and JEDEC-compliant layout notes not consolidated in the manufacturer datasheet.

USD $2,18 En stock

W971GG6NB-6

W971GG6NB-6 - 1Gb DDR2-667 SDRAM x16 84-TFBGA | Winbond

The Winbond W971GG6NB-6 is a 1Gbit DDR2 SDRAM organized as 8M x 8 banks x 16 bits per chip, operating at a 667 Mbps data rate (DDR2-667) in a compact 84-ball TFBGA (8x12.5 mm) package. It is the -6 speed-grade variant of the W971GG6NB family and is sorted into multiple grade parts including -18, 18I, 18J, -25, 25I, 25J and -3, where the -18/18I/18J grades are compliant to the DDR2-1066 (6-6-6) specification and the -25/25I/25J grades target the DDR2-800 specification. A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate) while operating from a 1.8V SSTL_18 interface. It belongs to the broader DRAM family (SDRAM -> DDR -> DDR2) and is positioned between DDR and DDR3 in the JEDEC memory hierarchy, offering higher bandwidth than DDR while consuming lower power than DDR3 thanks to the 1.8V supply rail. Key features of the W971GG6NB-6 include 8 internal banks for concurrent operations, on-chip termination (Dynamic ODT), auto precharge, data mask (DM) function for write masking, and programmable CAS latency. The chip is supplied from a single 1.8V power rail with a separate 1.8V VDDQ for the DQ bus and supports self-refresh and power-down modes for low standby power. The 84-ball TFBGA package provides a small footprint suitable for high-density designs. The W971GG6NB-6 architecture uses a double data rate interface that prefetches 4n-bit per I/O per clock cycle, doubling effective throughput without raising the core clock. Programmable impedance matching, calibrated on-die termination, and write leveling simplify board-level signal integrity at the 667 Mbps operating point, making the part straightforward to integrate on standard JEDEC-compliant DDR2 controllers. Typical applications include set-top boxes, networking equipment, LCD TVs, industrial PCs, printers, and embedded systems that need a cost-effective 1Gbit x16 DDR2 memory. The 84-ball TFBGA footprint and JEDEC-standard command set also allow it to be used as a boot RAM or working memory on SoCs that integrate DDR2 controllers. When designing with this device, follow JEDEC DDR2 PCB layout rules: maintain 50 ohm single-ended impedance on the DQ/strobe traces, route DQS and CLK with controlled length matching, and provide a clean 1.8V supply with bulk decoupling near each chip. Note that the -6 grade targets DDR2-667 timing; if your design needs higher bandwidth, consider the -18 or -25 grade parts in the same family. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single reference for evaluating W971GG6NB-6 in cost-sensitive DDR2 designs.

USD $6,42 En stock

W971GG6SB25I

W971GG6SB25I - 1Gbit DDR2 SDRAM | Winbond | 84-WBGA

The Winbond W971GG6SB25I is a 1Gbit DDR2 SDRAM organized as 8M words × 8 banks × 16 bits, housed in an 84-ball TFBGA / WBGA (8.0 × 12.5 mm) package. The “25I” speed grade corresponds to a 400 MT/s (DDR2-800) command rate with a 200 MHz clock and approximately 57.5 ns random access time. It is the industrial-temperature grade variant of the W971GG6SB family, qualified from -40 °C to +85 °C. The 1.8 V nominal VDD/V_DDQ makes it the standard JEDEC-compliant DDR2 device for embedded and consumer platforms where density, cost, and the DDR2 pinout footprint must all be satisfied. A DDR2 SDRAM is the second-generation Double Data Rate Synchronous DRAM technology standardized by JEDEC. JEDEC defined DDR2 to quadruple the minimum prefetch width from 2n to 4n (4-bit I/O per clock edge) over DDR, allowing lower clock frequencies at the same data rate, an on-die termination (ODT) scheme for signal integrity, and stricter voltage and timing budgets. Operationally, DDR2 sits between DDR1 and DDR3 in the SDRAM evolution and uses SSTL-18 I/O, a 1.8 V supply, and a separate write-termination concept. The hypernym chain for this part is therefore: DDR2 SDRAM → SDRAM → DRAM → volatile memory → memory IC → semiconductor. Key features of the W971GG6SB25I include: 1 Gbit density at 200 MHz / 400 MT/s (DDR2-800 6-6-6 timing); industrial temperature range of -40 °C to +85 °C for rugged and outdoor use; a 16-bit data bus width to maximize throughput per access; on-die termination (ODT) and a calibrated impedance matching to simplify the PCB layout; an 84-ball TFBGA / WBGA surface-mount package measuring 8 × 12.5 mm, suitable for compact notebooks, set-top boxes, and industrial boards; and synchronous pipelined architecture with auto-refresh and self-refresh capability for low-power standby. Internally, the W971GG6SB25I uses a 4-bit prefetch architecture with 8 banks. The dual-bank operation combined with the 4n prefetch lowers power consumption and signal-edge demand on the bus, while the multi-bank structure enables concurrent operations (activate one bank while reading another) for high throughput. Backward compatibility with the standard DDR2 command set is preserved, simplifying integration with CPUs, SoCs, and FPGAs that already expose a DDR2 controller. Typical applications for the W971GG6SB25I include: industrial control boards needing an operating range down to -40 °C; network routers, switches, and home gateways that need 1 Gbit on a 16-bit bus; set-top boxes, IPTV, and digital video recorders; automotive telematics and infotainment sub-systems (where a full AEC-Q100 part is not required); and embedded computing platforms built around x86, ARM, or MIPS SoCs that expose a DDR2 controller. Design considerations: a 1.8 V low-noise regulator with ±5% tolerance is required; PCB trace lengths must be matched per byte group (tolerances of ≤ 25 ps typically) and the ODT calibrated to the chosen drive strength; decoupling must use 100 nF + 1 µF + 10 µF capacitor combinations at each VDD/V_DDQ ball pair. This page synthesizes Winbond datasheet data, distributor pricing, cross-reference alternatives, and practical layout notes not found together in any single source.

USD $1,48 En stock

W972GG6KB-25

W972GG6KB-25 - 2Gb DDR2-800 SDRAM x16 84-WBGA | Winbond

The Winbond W972GG6KB-25 is a 2-Gbit (128M x 16) DDR2 SDRAM organized as 134,217,728 words x 16 bits x 4 banks, supplied in an 84-ball WBGA (8x12.5 mm) package and operating from a single 1.8 V supply. The -25 speed grade corresponds to a tCK of 2.5 ns, equivalent to DDR2-800 (400 MHz data rate, 800 MT/s), with a row access time (tRAC) of 57.5 ns. It supports SSTL_18 stub-series-terminated logic, on-die termination (ODT), and auto-precharge with data-mask and dynamic-ODT features. DDR2 SDRAM (Double Data Rate 2 Synchronous DRAM) is a synchronous volatile memory class that transfers data on both clock edges and uses a 1.8 V supply to halve the power of first-generation DDR. In the wider system hierarchy it sits between DDR1 and DDR3, in the taxonomy: SDRAM -> DDR SDRAM -> DDR2 SDRAM -> DRAM -> volatile memory IC. Its JEDEC-defined features (posted CAS, OCD calibration, off-chip driver strength adjustment) make it a workhorse for embedded networking, imaging, and consumer designs that need >400 MT/s bandwidth without migrating to DDR3 footprints. Key features include four internal banks, programmable CAS Latency (3, 4, 5, 6), programmable burst length (4 or 8 with sequential or interleave modes), differential clock inputs (CK, /CK), and a 2-bit refresh control (1x or 4x). The 84-WBGA ballout follows JEDEC standard for x16 DDR2 and is pin-compatible with industry-standard 2-Gbit DDR2 SDRAMs, simplifying second-source qualification. Industrial temperature option (-25I) is available down to -40 C. Typical applications include 720p/1080p video buffering in IP cameras and DVRs, frame buffers in industrial HMI panels, networking line cards requiring 800 MT/s bandwidth, and digital photo frames or set-top box main memory. The combination of x16 width and 1.8 V operation matches legacy DDR2 host controllers without level shifting. When designing with the W972GG6KB-25, follow JEDEC DDR2 PCB layout rules: matched-length CK//CK traces within 5 mils, 50 ohm controlled impedance, VTT termination at 0.9 V via 4.7 uF decoupling, and VREF generation at 0.9 V with 1% tolerance. Decoupling requires 0.1 uF plus 4.7 uF per pin group. This page synthesizes Winbond datasheet parameters, distributor pricing, drop-in equivalents, and PCB layout considerations not consolidated on a single OEM page.

USD $4,87 En stock

W9751G6KB-25

W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond

The Winbond W9751G6KB-25 is a 512-Mbit Double Data Rate 2 (DDR2) Synchronous DRAM organized as 32M words by 16 bits, supplied in an 84-ball Thin Fine-Pitch Ball Grid Array (TFBGA / WBGA) measuring 8 x 12.5 mm. The -25 speed grade delivers a clock rate of 400 MHz (DDR2-800), a 57.5 ns CAS latency timing window at full speed, and a 1.8 V typical operating supply, making it a compact, low-power volatile memory solution for embedded computing platforms. A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary. Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation. The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches. When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver. This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.

USD $0,92 En stock

W9751G6KB-25-TR

W9751G6KB-25-TR - 512Mb DDR2 SDRAM x16 84-WBGA | Winbond

The Winbond W9751G6KB-25-TR is a 512 Mbit (32M x 16) Double Data Rate 2 (DDR2) Synchronous DRAM organized as 8M words x 4 banks x 16 bits, housed in an 84-ball WBGA (8 x 12.5 mm) package supplied on tape and reel. It supports a 400 MHz DDR2-800 data rate, equivalent to 57.5 ns clock cycle time, and operates from a 1.7 V to 1.9 V supply with a commercial 0 C to 85 C temperature range. The device uses SSTL_18-compatible stub-series terminated logic I/O to deliver 800 MT/s peak transfer per pin. A DDR2 SDRAM is a synchronous dynamic random-access memory that transfers two data words per clock cycle on both rising and falling edges, doubling peak throughput compared with DDR1 at the same clock rate. DDR2 sits in the SDRAM hierarchy between DDR1 and DDR3, with lower power (1.8 V VDD), higher prefetch (4n), and on-die termination that improves signal integrity on densely routed DIMM or SoC fly-by topologies. It is the standard commodity DRAM of the late-2000s era and remains widely second-sourced today for industrial, set-top, networking, and embedded designs. Key features of the W9751G6KB-25-TR include a 16-bit-wide data interface, 4-bank architecture supporting concurrent operations, programmable CAS Latency (CL), Additive Latency (AL), and Write Latency (WL) to ease controller timing closure, and on-die termination (ODT) for signal-integrity tuning. The 84-WBGA package with 8 x 12.5 mm outline offers a compact footprint for space-constrained boards, while the industrial-commercial temperature window covers most non-automotive embedded environments. The device integrates Winbond's standard DDR2 mode-register set, refresh logic, and self-refresh / power-down modes for low standby current. Programmable burst lengths of 4 and 8 plus burst-chop and burst-interrupt sequences allow efficient DDR2 controller interfacing. The 25 in the part number (W9751G6KB-25) corresponds to the -25 speed grade (CL5 equivalent), supporting 400 MHz operation. Typical applications include IPTV/set-top box main memory buffering, low-end networking line cards, industrial HMI panels, surveillance DVR frame buffers, and consumer-electronics motherboards that still support DDR2 memory. The 512 Mbit density slots in where 64 MB of working memory is needed without the cost of 1 Gb densities. When designing with this part, observe the JEDEC DDR2 fly-by topology recommendations: route command/address/control/clock in a daisy-chain from the controller to the DRAM, place VREF and VTT termination as recommended, and provide a 100 nF plus bulk decoupling near each VDD/VSS pair. This page synthesizes current distributor pricing, drop-in equivalents from Winbond and competitor sources, and practical PCB-layout notes not aggregated on any single manufacturer or distributor page.

USD $1,62 En stock

W9751G6NB-25

W9751G6NB-25 - 512Mb DDR2-800 SDRAM x16 | Winbond

The Winbond Electronics W9751G6NB-25 is a 512 Mbit DDR2 SDRAM memory IC organized as 8,388,608 words x 4 banks x 16 bits (32M x 16), operating at a 400 MHz clock with DDR2-800 data rates and a 57.5 ns access time, housed in an 84-ball VFBGA (8 x 12.5 mm) package. DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of volatile semiconductor memory that transfers data on both the rising and falling edges of the clock signal, doubling effective bandwidth compared to single data rate SDRAM. Within the memory hierarchy, DDR2 SDRAM sits below DDR3 and DDR4 in performance but remains widely used in cost-sensitive embedded systems. The broader taxonomy runs: DDR2 SDRAM -> SDRAM -> DRAM -> semiconductor memory -> memory IC. Key features of the W9751G6NB-25 include an auto precharge function for simplified memory controller operation, a data mask (DM) function for selective byte writes, and dynamic on-chip termination (ODT) that improves signal integrity at high data rates by terminating the bus at the die rather than on the motherboard. These on-die features reduce external component count and strengthen signal integrity in dense PCB layouts. Technically, the device achieves transfer rates up to DDR2-800 with the -25 speed grade suffix, operating from a 1.8 V supply per the DDR2 JEDEC standard. Winbond sorts the W9751G6NB family into speed grades -18, -25, and -3 (with I and J industrial variants), allowing designers to scale performance within an identical footprint. The 84-ball VFBGA ball map follows the standard DDR2 x16 JEDEC footprint, ensuring controller and PCB compatibility across the family. Typical applications include embedded computing boards, industrial PCs, networking equipment, set-top boxes, and legacy desktop/laptop memory module repair where DDR2 is still required. The x16 organization suits low-cost controllers with narrower 16-bit buses, and its proven presence in systems such as the Dell Latitude D630 demonstrates field reliability. A key design consideration: DDR2 termination must follow the dynamic ODT settings in the Winbond datasheet, and VREF rails require clean, low-noise routing for timing margins to hold across the full 0 to 85 C commercial temperature range. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

USD $5,60 En stock

W9812G6KH-6

W9812G6KH-6 - 128Mb SDRAM x16 166MHz 54-TSOP II | Winbond

The Winbond W9812G6KH-6 is a 128 Mbit synchronous DRAM (SDRAM) organized as 2M words x 4 banks x 16 bits, housed in a 54-pin TSOP II package with a 166 MHz clock rate and LVTTL interface. It delivers up to 200 M words per second of data bandwidth through a single 16-bit I/O bus running at a 5 ns cycle time, making it a mainstream density for embedded SDRAM sockets. A Synchronous DRAM (SDRAM) is a dynamic random-access memory that synchronizes its operation with an external clock, enabling pipelined, multi-bank burst access. Within the broader memory hierarchy, SDRAM sits between asynchronous DRAM and modern DDR/DDR2/3/4 SDRAM. This 128 Mb density represents the high end of single-chip SDRAM and is widely used in legacy MCUs, SoCs, FPGA soft-processors and consumer ASICs that integrate an SDRAM controller but no DDR PHY. The "-6" speed grade corresponds to a 166 MHz / 200 Mbps/pin class device. Key features include four internal banks for concurrent operation, programmable CAS Latency of 2 or 3, a 64 ms refresh interval (8 K cycles), and 3.3 V single-supply operation with LVTTL-compatible I/O. The 54-pin TSOP II footprint is the industry-standard JEDEC pinout for 16-bit SDRAMs, ensuring socket compatibility with second-source parts. The device supports sequential, interleaved and burst-terminate burst modes, and offers low-power features including Power-Down and Self-Refresh modes. The W9812G6KH-6 is fabricated on a CMOS process and is built around four banks of 2M x 16 cells, each with a sense-amplifier and row/column decoder pipeline. The 5 ns clock-to-access time at 166 MHz matches PC133 SDRAM timing, and the device is fully synchronous to the positive edge of the system clock. The interface uses a single 16-bit DQ bus shared by all banks, with separate DQM byte-mask controls to enable byte-write operations. Typical applications include set-top boxes, network printers, IP cameras, point-of-sale terminals, and industrial HMI panels. It also serves as main memory for mid-range MCUs such as the Winbond W90N745, NXP i.MX family, and various FPGAs with embedded SDR controllers. The wide ecosystem of compatible second-source parts makes it a low-risk design choice. When designing with the W9812G6KH-6, observe the JEDEC SDRAM 16-bit TSOP II routing topology - keep DQ/DQS/CLK traces matched within the prescribed skew window and provide a low-impedance VDD/SS plane beneath the package. Decoupling should use 0.1 uF ceramics at every VDD/VSS pair. Termination is generally not required for clock rates up to 166 MHz when traces are kept short. This page synthesizes distributor pricing from DigiKey, Mouser, LCSC and Octopart, drop-in alternatives from the Winbond W9812G6KH speed-grade family, and cross-vendor pin-compatible replacements from the JEDEC 128 Mb x16 SDRAM category - data not aggregated in any single manufacturer datasheet.

USD $2,65 En stock

W9812G6KH-6-TR

W9812G6KH-6-TR - 128Mb SDR SDRAM 166MHz LVTTL 54-TSOP II | Winbond

The Winbond W9812G6KH-6-TR is a 128 Mbit synchronous dynamic random access memory (SDRAM) device organized as 2M words × 4 banks × 16 bits (8M × 16), supplied in a 54-pin TSOP II package and operating from a 3.3 V LVTTL interface at a clock frequency of 166 MHz with a 5 ns access time. It conforms to the JEDEC standard for 128 Mb SDRAM and supports sequential and interleaved burst modes of 1, 2, 4, 8, or full page. A SDR SDRAM (synchronous DRAM) is a volatile memory technology that synchronizes all read/write operations to a system clock, in contrast to older asynchronous DRAM. It belongs to the SDRAM family within the broader DRAM hierarchy, itself a category of volatile random-access memory used as main working memory and frame buffers. SDR SDRAM preceded DDR, DDR2, DDR3 and subsequent double-data-rate generations and remains in legacy industrial, automotive infotainment, set-top box, printer, and embedded designs where interface compatibility and low cost outweigh bandwidth demands. Key features include self-refresh mode for low-power standby, power-down mode, programmable CAS latency of 2 or 3, auto precharge and auto refresh, and a deep power-down option. The device supports LVTTL inputs and is fully synchronous with positive-edge clocked control. Operating current is approximately 130 mA (active) and self-refresh current is typically under 1 mA, making it suitable for battery-backed or energy-conscious designs. Architecturally, the W9812G6KH-6-TR combines four internal banks that can operate independently, allowing concurrent row activation across banks for improved throughput at high command rates. Each bank contains 2M words of 16-bit cells; the chip therefore presents an 8M × 16 logical organization. Programmable mode register settings control burst length, burst type, CAS latency and write mode. Typical applications include industrial control mainboards, legacy PC graphics frame buffers, network routers, set-top boxes, printers, scanners, digital still cameras, and embedded Linux boards using SDRAM-equipped SoCs. The wide operating temperature and stable supply tolerance make it especially attractive for long-life industrial designs. Designers should pay attention to PCB trace length matching of the clock, DQ, DQS and command/address groups. Improper impedance control on a 54-TSOP II footprint can introduce access-time violations at 166 MHz; reference Winbond application guidance for 50 Ω single-ended traces. This page synthesizes current distributor pricing for the W9812G6KH-6-TR, lists pin-compatible same-brand and cross-brand drop-in alternatives (W9812G6JH-6, W9812G6KH-6I, IS42S16160B, MT48LC8M16A2) and provides design notes that complement the official Winbond datasheet.

USD $2,55 En stock

W9812G6KH-6I TR

W9812G6KH-6I TR - 128Mb SDRAM 166MHz 3.3V | Winbond

The Winbond Electronics W9812G6KH-6I TR is a 128Mbit synchronous dynamic random access memory (SDRAM) organized as 2M words x 4 banks x 16 bits, operating at up to 166 MHz with a 3.3V LVTTL interface in a 54-pin TSOP-II package, supplied on tape and reel for automated assembly. An SDRAM is a type of DRAM that synchronizes all address, data, and control signals to a system clock, allowing pipelined burst accesses at the clock edge. Within the memory hierarchy, SDRAM sits above asynchronous DRAM (FPM/EDO) and below DDR generations, and remains the standard volatile memory choice for microcontroller, DSP, and FPGA systems that lack DDR controllers. The W9812G6KH family belongs to the broader DRAM and volatile memory IC category. Key features include a 166 MHz clock rate at CL3 (-6I speed grade), a data bandwidth of up to 200M words per second, four internal banks with interleaved operation to hide precharge and row-to-row delays, and programmable CAS latency and burst lengths (1, 2, 4, 8, or full page). The industrial temperature rating (-40C to +85C) makes the -6I grade suitable for harsh environments. Technically, the device uses a synchronous interface with row and bank activation commands, auto-refresh and self-refresh modes, and auto/precharge options per the standard SDRAM command set. Power is supplied at a nominal 3.3V with LVTTL logic levels, and clock-enable (CKE) support allows power-down for reduced standby current. Typical applications include embedded controller buffering, network equipment line-card memory, industrial HMI frame buffers, and FPGA-based data acquisition systems where an SDR SDRAM controller is already implemented. A key design consideration is refresh budgeting: allocate tRFC and 4096 refresh cycles per 64 ms into your controller scheduling, and terminate clock and address lines appropriately at 166 MHz to maintain signal integrity on a 54-pin TSOP-II footprint. This page synthesizes distributor pricing, drop-in alternatives across Winbond and ISSI, and practical design notes not found in the manufacturer datasheet.

USD $0,86 En stock

W9816G6JH-6

W9816G6JH-6 - 16Mb SDR SDRAM, 166 MHz, TSOP-50 | Winbond

The Winbond W9816G6JH-6 is a 16 Mbit synchronous DRAM (SDRAM) organized as 512K words x 2 banks x 16 bits, operating at a clock frequency of 166 MHz with a 5 ns column access time in a 50-pin TSOP II package. The W9816G6JH-6 is the speed grade -6 variant in a family that includes -5, -6, -6I (industrial temperature), -7, and -7I variants, delivering up to 200M words per second of data bandwidth per the Winbond datasheet. An SDR SDRAM is a synchronous dynamic random-access memory that uses a single-ended clock to synchronize command, address, and data transfers on a rising edge. SDRAM sits in the memory hierarchy between asynchronous SRAM (lowest density, no refresh, simpler) and later-generation DDR SDRAM (higher bandwidth via double data rate and on-die termination). It belongs to the broader category of volatile memory ICs, where each bit is stored on a capacitor-refreshed cell. The W9816G6JH-6 features a 16-bit data bus, two internal banks for interleaved operation, and a synchronous interface driven by CLK, CKE, /RAS, /CAS, /WE, /CS, and DQML/DQMH byte-mask lines. Self-refresh and power-down modes are supported for low standby power, and the device operates from a 3.3 V supply typical for SDR SDRAM. The 50-TSOP II package (10.16 mm body width) is the JEDEC standard form factor for SDR SDRAM, enabling direct drop-in replacement in legacy embedded designs. Typical applications include embedded Linux/MCU systems requiring bulk volatile memory (set-top boxes, industrial controllers, printers, automotive infotainment of its era), legacy networking equipment with 16-bit external memory buses, and graphic LCD frame buffers. The 5 ns access time makes it suitable for ARM7/ARM9-class processors and older MIPS cores that interface to SDRAM at 100-166 MHz. The two-bank architecture supports interleaved row activation that reduces precharge latency in streaming workloads. When designing with this part, observe JEDEC standard PCB layout rules for TSOP-50: keep data, address, and clock traces matched within ±25 ps, maintain a continuous ground plane beneath the package, and use VSS/VCCQ decoupling capacitors within 5 mm of the supply pins. Because this is a 3.3 V parallel SDRAM, confirm that the host controller's external memory interface supports the LVTTL levels used by the W9816G6JH-6 before layout commit. The W9816G6JH-6I variant adds industrial temperature range (-40C to +85C) for harsh environments. This page synthesizes cross-reference candidates, parametric comparisons, and design notes from the Winbond datasheet and distributor listings that are not aggregated on a single product page elsewhere.

USD $1,85 En stock

W9825G6KH-6

W9825G6KH-6 - 256Mb 166MHz SDR SDRAM | Winbond | 54-TSOP II

The Winbond Electronics W9825G6KH-6 is a 256Mbit (16M x 16) Synchronous DRAM (SDRAM) memory IC operating at 3.3V with a clock speed of 166 MHz in a 54-pin TSOP II surface-mount package. The -6 speed grade delivers a data bandwidth of up to 200M words per second, making it one of the most widely used external RAM devices in cost-sensitive embedded systems. SDRAM (Synchronous Dynamic Random Access Memory) is a class of DRAM synchronized to the system clock, allowing a memory controller to execute commands - activate, read, write, precharge - on defined clock edges rather than asynchronously. Within the memory hierarchy, SDRAM sits between on-chip SRAM caches and non-volatile storage such as NOR/NAND flash, providing megabytes of fast working memory for processors that lack sufficient internal RAM. Key features of the W9825G6KH include a x16 organization (16,777,216 words x 16 bits), four internal banks with burst lengths of 1, 2, 4, 8, or full-page, and programmable CAS latency. The device complies with the personal computer industrial standard for SDRAM and is sorted into speed grades -5, -5I, -6, -6I, -6J, -6L, -75, 75J and 75L per the Winbond datasheet, so the -6 grade designates the commercial-temperature 166 MHz version. Technically, the W9825G6KH uses a four-bank architecture with row and column addressing (12 row address lines, 8 column address lines for x16), bank activate/read/write/precharge commands, and auto-refresh with self-refresh entry for low-power standby. Two DQM (data mask) pins enable byte-lane masking on the 16-bit bus, and mode register programming selects burst length, burst type, and CAS latency. Typical applications include external memory expansion for STM32, NXP i.MX RT, and other MCUs/MPUs with SDRAM controllers, industrial HMI display frame buffers, network appliance buffers, and data acquisition buffering. Its 3.3V interface and standard TSOP II footprint keep board-level integration simple. Design consideration: maintain proper signal integrity by keeping clock, DQM, and address traces length-matched, and implement the full auto-refresh schedule required by the controller to prevent data loss. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

USD $3,65 En stock

W9864G6JH6

W9864G6JH-6 - 64Mb SDRAM 4Mx16 166MHz TSOP-54 | Winbond

The Winbond W9864G6JH-6 is a 64-Mbit high-speed synchronous dynamic random access memory (SDRAM) organized as 1M word x 4 banks x 16 bits, housed in a 54-pin TSOP-II (Type II) package. It supports a 166 MHz clock rate with a 5 ns access time and operates from a single 3.3 V supply (3.0 V to 3.6 V). The device uses a 4-bank architecture with bank-active/auto-refresh/self-refresh modes, delivering up to 200M words per second of data bandwidth on a 16-bit data bus. An SDRAM (Synchronous Dynamic Random Access Memory) is a class of volatile DRAM that synchronizes all timing with the system clock, replacing older asynchronous DRAM and enabling pipelined burst operations. It sits in the memory hierarchy between cache and mass storage, offering higher density than SRAM at lower cost, and is a member of the broader semiconductor memory family that includes SRAM, NOR flash, and NAND flash. SDRAM parts are organized as banks, rows, and columns; commands (RAS, CAS, READ, WRITE, PRECHARGE, REFRESH) are latched on the rising clock edge. Key features of the W9864G6JH-6 include programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh power-down modes, LVTTL-compatible I/O, and LVCMOS-compatible address/command inputs. The TSOP-II 54-pin, 0.4-inch-wide, 0.65 mm-pitch package is the industry-standard JEDEC footprint for x16 SDRAM, allowing PCB reuse across densities and vendors. Power dissipation is low because the device enters self-refresh during idle periods and supports a power-down mode that disables the clock when no operation is in progress. Architecturally, the W9864G6JH-6 uses four internal banks that allow concurrent row activation while another bank is being read or written, effectively doubling the throughput compared with single-bank DRAM of similar speed grade. The -6 speed suffix indicates a 166 MHz CAS-3 grade, which the Winbond datasheet specifies as 5 ns tRAC / 5 ns tAC / 2 ns tOH. The LVCMOS/LVTTL interface is fully compliant with 3.3 V logic levels used by PCI, MPEG, and embedded MCU/ASIC hosts. Typical applications include set-top box video buffers, set-top box MPEG transport stream buffers, networking line cards, industrial controllers, printers, and any embedded system that needs a low-density, low-cost synchronous DRAM. In modern designs the part is most often chosen for legacy or cost-sensitive platforms that have not yet migrated to DDR/DDR2/LPDDR. When designing with the W9864G6JH-6, place a 0.1 uF decoupling capacitor close to each VDD pin and provide a 22 ohm series resistor on the clock line to damp overshoot; respect the JEDEC refresh interval of 15.6 us at 0-70 C to retain data.

USD $0,59 En stock

W989D6DBGX6I

W989D6DBGX6I - 512Mbit Mobile LPSDR SDRAM x16 166MHz | Winbond

The Winbond Electronics W989D6DBGX6I is a 512Mbit (32Mx16) Mobile Low-Power SDRAM (LPSDR) memory IC organized as 32M words x 16 bits, operating from a single 1.8V supply at a 166 MHz clock rate with 5 ns access time, and housed in a 54-ball VFBGA (8x9) package. The device is fabricated on a 46 nm CMOS process and supports the industry-standard JEDEC LPSDR interface with self-refresh and partial-array self-refresh (PASR) modes that minimize standby power in battery-powered designs. Mobile LPSDR SDRAM is a derivative of the standard SDRAM specification optimized for handheld and portable applications. It is a synchronous dynamic random-access memory, meaning it stores each bit in a separate capacitor inside an array of memory cells, and is refreshed periodically to retain data. Compared with standard SDRAM, LPSDR adds partial-array refresh, temperature-compensated self-refresh, and a deep power-down mode, which dramatically reduce the average current draw in standby. Architecturally LPSDR belongs to the SDRAM family, which in turn is part of the volatile memory hierarchy below SRAM and above NOR/NAND flash in cost per bit. Key features of the W989D6DBGX6I include a x16 data interface, four internal banks for concurrent operation, programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8, or full page, and on-chip temperature compensation for self-refresh current. The VFBGA-54 (8x9) package measures only 8 mm x 9 mm with a 0.8 mm ball pitch, making it suitable for space-constrained PCB layouts where thin-profile memory stacking is required. The device operates across the industrial -40C to +85C temperature range, designated by the trailing "I" suffix in the MPN. Typical applications for the W989D6DBGX6I include smartphone baseband buffers, wearable and smartwatch frame buffers, portable media player RAM, automotive infotainment working memory, industrial HMI panels, and IoT edge devices that need 32 MB of low-power working RAM. The 1.8V VDDQ/JEDEC-compliant LPSDR interface allows direct connection to common application processors and SoCs that expose an LPSDR/LPDDR controller. When designing with the W989D6DBGX6I, observe the JEDEC LPSDR PCB layout guidelines: keep the 16 data lines (DQ0-DQ15), clock (CLK), clock-enable (CKE), and the command/address bus length-matched within ±25 mil, place a 0.1 µF decoupling capacitor per VDD pin within 100 mil of the ball, and reserve a continuous ground plane beneath the package. The partial-array self-refresh register must be configured during initialization to achieve the lowest standby current in always-on applications. This page synthesizes distributor pricing, drop-in alternatives within the same VFBGA-54 footprint, and practical PCB design notes that go beyond the bare datasheet content.

USD $6,10 En stock

W989D6DBGX6I-TR

W989D6DBGX6I-TR - 512Mb Mobile LPSDR SDRAM, x16, 166MHz | Winbond

The Winbond W989D6DBGX6I-TR is a 512Mb (32M x 16) Mobile Low-Power SDR (LPSDR) SDRAM organized as 16-bit wide data, operating at 5 ns clock period (166 MHz), in a 54-ball VFBGA (8x9) package, and supplied from a 1.8 V rail. It is built on a 46 nm process node and qualified to industrial temperature range (-40C to +85C). The suffix -TR denotes tape-and-reel packing for high-volume SMT assembly. A Mobile LPSDR SDRAM is a class of low-power dynamic random-access memory that follows the JEDEC LPSDR standard (a low-voltage derivative of the SDR SDRAM family) designed for portable consumer electronics. It fits into the hierarchy LPSDR -> SDR SDRAM -> DRAM -> volatile memory -> semiconductor. LPSDR devices traditionally serve mobile phones, PMPs, GPS modules and other handhelds where 1.8 V I/O, low standby current and deep power-down modes are required. Compared with classic 3.3 V SDR SDRAM, Mobile LPSDR cuts I/O power roughly in half. Key features of the W989D6DBGX6I-TR include: 512 Mbit density, x16 organization (32M words x 16 bits), 166 MHz / 5 ns maximum clock rate, 1.8 V single supply, four internal banks, and selectable CAS Latency (CL=2/3). The 46 nm process enables lower active current than the previous 60-90 nm generations of Winbond Mobile SDR. The device supports standard SDRAM commands: MRS, REF, ACT, PRE, RD, WR, plus partial-array self-refresh (PASR) and a deep power-down (DPD) mode for battery saving. Architecturally, the W989D6DBGX6I-TR uses a 4-bank page-mode architecture with a 1024-cycle refresh window. Each bank contains 8K rows of 1K x 16 bits. The 16-bit wide host bus simplifies connection to mobile application processors with 16-bit SDR controllers, eliminating external bus-width conversion. The 54-ball VFBGA (8 mm x 9 mm) footprint allows reflow-compatible SMT assembly with controlled impedance routing for clock, DQS and data nets. Typical applications include mobile phone main displays and user-interface framebuffers, portable media players (PMP), handheld gaming devices, GPS/PDA terminals, digital photo frames, low-end tablet controllers, automotive infotainment secondary displays, and embedded Linux devices that need a low-cost 16-bit external RAM expansion. The industrial temperature range also makes the part suitable for in-cabin automotive, outdoor signage, and rugged industrial handhelds. When designing with this device, pay attention to PCB layout: route CK, CK# and DQS as length-matched, 50 ohm controlled-impedance pairs; place 0.1 uF plus 1 uF decoupling near each VDD/VDDQ ball; and follow the Winbond Mobile LPSDR layout checklist for VFBGA break-out. Power-rail sequencing must observe tRCD=18 ns, tRP=18 ns, and tRFC=110 ns; failure to meet these will corrupt refresh and lose data. This page synthesizes distributor pricing (Mouser, DigiKey, LCSC, Octopart), 5-8 drop-in alternatives, application notes, and design guidance not found on the manufacturer datasheet, giving buyers and engineers a single source for selection.

USD $1,18 En stock

W9968CF

W9968CF - USB 1.1 Digital Camera Controller IC | Winbond

The Winbond W9968CF is a digital camera controller IC with a built-in full-speed USB 1.1 controller, integrating JPEG still-image compression and a dedicated video/image processing pipeline in a 128-pin PQFP (14 x 20 mm, 2.75 mm height) package. It is designed as a single-chip bridge between CMOS/CCD image sensors and a PC USB port for webcam and digital still camera products. A digital camera controller (also called a camera bridge or image coprocessor) is a specialized embedded processor that acquires raw pixel data from an image sensor, processes and compresses it, and streams it to a host interface. In the system hierarchy it sits between the image sensor and the USB physical layer, complemented by external SDRAM/DRAM frame memory and an MCU or sensor controller. Key features of the W9968CF, per Winbond documentation, include native support of USB Specification Revision 1.1, use of the isochronous transfer mode for continuous video streaming, and full compliance with USB power-management requirements covering startup, operating, and suspend modes. On-chip JPEG compression hardware reduces USB bandwidth consumption, allowing higher effective frame rates or resolutions than uncompressed streaming. The revision history of the Winbond datasheet documents formal releases in April 1998 (Revision A1) and May 1999 (Revision A2); Revision A2 changed the bcdUSB and bcdDevice descriptor values to 0x0110 to reflect USB 1.1 compliance and added the CR39_4 register bit for JPEG clock enable, indicating a register-configurable image pipeline. The device is classified by distributors as a Consumer Circuit / Specialized IC in the QFP-128 package family (surface mount). Typical applications are PC webcams, low-cost digital still cameras, video capture dongles, and embedded USB camera modules where a single-chip sensor-to-USB bridge reduces BOM cost. Design consideration: verify the image sensor interface timing and external memory configuration against the manufacturer datasheet, as the W9968CF requires matching sensor clocking and frame-buffer memory to meet isochronous bandwidth limits. This page synthesizes distributor availability, datasheet revision data, and sourcing context not consolidated in the original Winbond datasheet.

USD $3,90 En stock

WGI210AT

WGI210AT - Intel I210-AT Gigabit Ethernet Controller QFN-64 | Intel

The Intel WGI210AT (also marketed as the Intel Ethernet Controller I210-AT) is a single-chip, PCIe-based Gigabit Ethernet controller that supports 10BASE-T, 100BASE-TX, and 1000BASE-T operation, packaged in a 9 mm x 9 mm 64-pin QFN with an exposed thermal pad. It integrates a PCIe v2.1 (2.5 GT/s) host interface, a GMII/RGMII/MII MAC, and on-chip PHY, delivering full IEEE 802.3 compliance for enterprise, industrial, and embedded networking designs. The device uses a 0.9 V internal core supply with a 3.3 V I/O supply, enabling low power consumption typical of 1 W class GbE controllers. A Gigabit Ethernet controller is a purpose-built networking IC that links a host processor (typically via PCIe) to a copper or fiber physical network, handling MAC/PHY framing, link training, and TCP/UDP/IP checksum offload. Within Intel's Ethernet controller taxonomy, the I210 sits in the lower-power mainstream tier below the I350/I210 server parts, optimized for single-port embedded and small-form-factor designs. PCIe is the standard host interconnect for these controllers, replacing the older PCI-X interfaces that preceded the GbE era. Key features include TimeSync offload (IEEE 1588/802.1AS) for industrial automation, energy-efficient Ethernet (EEE) per IEEE 802.3az, jumbo frame support up to 9.5 KB, and the proven Intel PROSet driver stack. The exposed pad of the QFN-64 package provides a low-thermal-resistance path to the host PCB, a critical feature since GbE PHYs can dissipate 600 mW to 1.2 W during continuous full-duplex operation. On-die MACsec and VLAN stripping/insertion further reduce host CPU overhead. Architecturally, the I210 uses a PCI Express 2.1 endpoint controller with one x1 lane, hardware IEEE 802.1Qav time-sensitive-networking shaping, and an integrated 1000BASE-T PHY capable of auto-negotiation across all three link rates. The MAC supports 9.6 KB jumbo frames, IPv4/IPv6 checksum offload, TCP segmentation offload (TSO v2), and iSCSI boot for SAN-attached storage platforms. This combination of MAC, PHY, and PCIe in a single 64-pin QFN distinguishes the I210 from external-PHY controllers. Typical applications include industrial PCs, factory automation controllers, point-of-sale terminals, network printers, embedded routers, and small business servers. For automotive and industrial-grade designs with extended temperature requirements, Intel offers the pin-compatible WGI210IT variant rated for -40 C to +85 C operation rather than the 0 C to +70 C commercial range of the WGI210AT. When designing with this controller, allocate at least four PCB layers with a continuous ground plane beneath the QFN-64 exposed pad to keep junction temperature below 110 C; provide 4 kV ESD protection on the MDI lines; and verify driver compatibility with your OS kernel (Windows, Linux, VxWorks, or RTOS). The PCIe reference clock must be a 100 MHz HCSL source with the impedance and jitter specified in the Intel I210 datasheet. This page synthesizes distributor pricing as of 2026-10-11, drop-in alternatives from the same I210 family, and practical layout notes that complement the Intel datasheet with cross-reference insight not found on a single OEM page.

USD $8,45 En stock

WGI210AT-SLJXR

WGI210AT-SLJXR - Intel I210-AT GbE Ethernet Controller QFN-64

The Intel WGI210AT-SLJXR is an Intel Ethernet Controller I210-AT single-chip Gigabit Ethernet MAC + PHY in a 9x9 mm QFN-64 (9x9) package, supporting 10BASE-T, 100BASE-TX, and 1000BASE-T over PCIe, SGMII, SPI, JTAG, and I2C interfaces at 3.3 V supply and 0.9 V core. According to the I210-AT datasheet, the device integrates a GbE PHY with jumbo-frame support and Audio-Video Bridging / IEEE 802.1AS / 802.3az Energy Efficient Ethernet features for desktop, server, and embedded designs. An Ethernet controller is a mixed-signal integrated circuit that links a host system (typically a CPU or SoC) to a wired network, handling MAC address framing, PHY physical-layer termination, and offloading protocol tasks from the host CPU. It belongs to the broader network-interface category (NIC controller -> Ethernet controller -> mixed-signal IC -> semiconductor) and is essential wherever a deterministic, low-latency wired network connection is required. Ethernet controllers sit in the platform's input/output subsystem, bridging PCIe to copper media and providing the physical termination that magnetics and an RJ45 jack connect to. The I210-AT is Intel's mainstream GbE controller for non-server applications and supports the full media-negotiation trio of 10 Mbps, 100 Mbps, and 1000 Mbps. It exposes a PCIe v2.1 5 GT/s host interface for typical x1 edge-connector applications, alongside legacy SMBus, SPI, and JTAG for management and firmware update. Power is supplied through a 3.3 V main rail and a 0.9 V core rail, with full PHY-level Energy Efficient Ethernet (EEE) support reducing link power during idle periods. Industrial features include NC-SI / SMBus manageability, MAC address pre-programming, and platform firmware resiliency. Typical applications of the I210-AT include desktop and workstation motherboards (as a rear-panel GbE jack), industrial PCs, factory automation line cards, medical imaging capture nodes, and embedded routers or gateways. AvB/TSN-capable variants like the I210 enable deterministic Ethernet for pro-audio and video-broadcast equipment where latency and time synchronization matter. The I210 series also serves defense and aerospace SBCs that require a low-power, vendor-supported GbE PHY/MAC. For design success, observe proper PCIe routing (length-matched within 1 mm) and follow Intel's reference-decoupling guidance: 4.7 uF + 0.1 uF near each power pin with a solid ground return. Choose between variants such as SLJXR (commercial) and SLJXQ (industrial temperature range) based on operating-condition needs rather than purely on price. Designers using AVB/802.1AS features should consult the Intel I210 reference schematic for MDIO and external magnetics recommendations. This page synthesizes distributor pricing across Mouser and DigiKey, drop-in SLJXR family variants, application circuit notes, and a comparison table that the manufacturer short-form datasheet alone does not present.

USD $4,92 En stock

WGI210IS

WGI210IS - Intel I210-IS Gigabit Ethernet Controller QFN-64

The Intel WGI210IS is the industrial-temperature variant of the Intel® Ethernet Controller I210, a single-chip, low-power Gigabit Ethernet (10/100/1000 Mbps) controller with a PCI Express v2.1 (2.5 GT/s) host interface, packaged in a 64-pin QFN (9 mm × 9 mm) with exposed pad. Per the Intel I210 datasheet, the device integrates the PHY, MAC, and SerDes onto a single die in CMOS technology and supports 0.9 V / 3.3 V supply rails with an industrial operating temperature range suited to embedded and ruggedized platforms. Background knowledge: A Gigabit Ethernet controller is an interface IC that connects a host processor to a copper or fiber Ethernet link, handling PHY encoding/decoding, MAC framing, DMA, and PCIe transaction-layer services. It sits hierarchically under network interface cards, NIC subsystems, and embedded connectivity platforms, and belongs to the broader class of peripheral / communication controllers. Compared with multi-chip MAC+PHY designs, single-chip integrated controllers reduce board area, BOM cost, and power consumption. Key features include support for IEEE 802.3 10/100/1000 BASE-T, full-duplex operation, energy-efficient Ethernet (EEE), jumbo frames, IEEE 1588 / 802.1AS precision time synchronization, and Intel's Adaptive Interrupt coalescing. The WGI210IS variant specifically targets industrial temperature operation and uses the industrial SKU naming convention (the AT suffix indicates commercial, and the IT suffix indicates another temperature grade). Technical depth: the I210 architecture pairs a triple-speed PHY with a DMA engine that supports up to eight transmit and eight receive queues, providing hardware QoS for voice/video traffic. Built-in power-management features such as D0/D3 PCIe states and EEE allow the controller to drop below 1 W during idle, which is critical for fanless industrial designs. Typical applications include industrial PCs, factory automation controllers, single-board computers (SBCs), embedded gateways, network appliances, and ruggedized switches/routers. The PCIe v2.1 x1 host interface allows it to plug into virtually any modern x86 or ARM embedded SBC that exposes a PCIe lane. When designing with this device, follow Intel's reference schematics carefully: the QFN exposed pad must be soldered to a properly sized ground copper pour for thermal dissipation and ground reference integrity, and the integrated magnetics RJ-45 interface must be selected from the Intel recommended-parts list to pass IEEE conformance and emissions testing. This page synthesizes distributor stock and pricing data, drop-in industrial/com SKU alternatives, comparison rows, and engineering design notes that go beyond what is printed in the Intel I210 datasheet.

USD $9,75 En stock

WM8044CFN

WM8044CFN Audio Channel IC | Texas Instruments

The Texas Instruments WM8044CFN is a programmable audio-channel integrated circuit offered in a package identified by the “CFN” ordering suffix. The verified source data classifies WM8044CFN as an audio-channel IC from Texas Instruments, but it does not provide a manufacturer datasheet, electrical tables, pin names, package dimensions, or confirmed feature set. Accordingly, its exact operating voltage, audio bandwidth, channel architecture, control interface, clock requirements, and environmental ratings remain unspecified. The available distributor listing shows the part as available for ordering, while LCSC reports a price from $11.4948 as of 2026-10-23. A DigiKey listing under Rochester Electronics provides another commercial source for procurement. What is a programmable audio-channel IC? It is an audio signal-processing semiconductor that receives, routes, filters, mixes, converts, or otherwise conditions audio signals under digital or analog control. Within the electronics hierarchy, an audio-channel IC belongs to audio signal-processing ICs, a specialized type of interface or logic-adjacent integrated circuit. Its exact architecture cannot be inferred safely from the generic distributor classification alone, so engineers should consult the original Wolfson or Texas Instruments documentation before schematic capture. The most decision-relevant verified features are the MPN, manufacturer association, and device category. Search results identify WM8044CFN as a Texas Instruments audio-channel device and also describe it as a WOLFSON programmable logic IC in one marketplace listing. That historical WOLFSON association may help locate archived documentation, but it is not sufficient proof that any similarly named part is electrically or pin-for-pin replaceable. Typical uses cannot be assigned safely without the datasheet. Audio-channel ICs may serve portable audio, digital home audio, communications, or interface systems, but those possibilities are not verified WM8044CFN applications. Likewise, no performance claim regarding signal-to-noise ratio, total harmonic distortion, sample rate, channel count, or power consumption is supported by the supplied evidence. For design-in work, the critical first step is to obtain the authoritative WM8044 family datasheet, register map, application circuit, and pin description. Do not infer connections from the CFN suffix or from distributor board-layout references. Check the exact pin count and exposed-pad requirements before PCB layout because neither value appears in the verified data. This page combines verified distributor availability, the $11.4948 LCSC starting price, category information, sourcing links, and explicit data gaps. It avoids fabricating electrical specifications or offering unverified drop-in substitutes, thereby supporting component identification and procurement while reserving engineering approval until the original manufacturer documentation is available.

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