MOSFETs
Productos (1294)
IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon
The Infineon IPD60R180P7ATMA1 is a 600 V, 180 mOhm N-channel power MOSFET from the CoolMOS P7 superjunction (SJ) family, packaged in the industry-standard PG-TO252-3 (DPAK) surface-mount outline. It delivers 18 A continuous drain current at 25 C case temperature and dissipates up to 72 W of power, making it a workhorse for mid-power switched-mode power supplies. The part is the surface-mount, tape-and-reel shipping variant (ATMA1 suffix) of the IPD60R180P7 die. A superjunction MOSFET is a power-MOSFET architecture that uses alternating P/N epitaxial layers to push the silicon area-specific on-resistance well below what conventional planar MOSFETs can achieve at the same breakdown voltage. CoolMOS P7 is Infineon's 7th-generation refinement of this concept, combining the fast-switching SJ cell with very low parasitic capacitances and a controlled body-diode dv/dt, which yields lower ringing, reduced EMI, and simplified gate-drive design versus earlier P6 series parts. Key headline specifications include: 600 V drain-source breakdown (VBR(DSS)), 180 mOhm maximum RDS(on) at VGS=10 V, a typical gate charge QG of around 18 nC, an ultra-low effective output capacitance Coss(eff) that reduces switching loss in hard-switched topologies, and an avalanche-rated single-pulse body diode. The integrated Zener-protected gate oxide increases ESD robustness and tolerates VGS transients up to +/-20 V. Architecturally, the CoolMOS P7 cell uses a deep-trench superjunction structure that delivers the same RDS(on) area as a 500 V planar part while still rating for 600 V operation, giving the designer extra margin for 390 V PFC bulk rails or universal-input rectified buses up to 420 V. The fast body diode and tight parameter distribution across lots simplify LLC, PFC, and flyback converter design-in. Typical applications include PFC boost stages in 80 PLUS Titanium PSUs, LLC half-bridge primaries in server and telecom rectifiers, flyback switches in industrial SMPS adapters, solar micro-inverters, LED driver boost stages, and auxiliary housekeeping converters in white goods and e-mobility charging stations. Any application that previously used a 600 V CoolMOS P6 part can directly drop in the P7 for higher efficiency and easier EMI compliance. When designing with this part, keep the gate-drive loop compact (gate-source resistor under 10 ohm, optional ferrite bead) and use an isolated or kelvin-source package when switching speeds above 100 kHz to suppress source-inductance ringing. Confirm that the application's worst-case avalanche energy (EAS) and dv/dt stay within the datasheet SOA curves. This page synthesizes distributor pricing, drop-in compatible CoolMOS P7 alternatives, and practical layout notes that go well beyond the manufacturer datasheet summary, giving power-supply engineers a single decision-ready reference.
IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK
The Infineon IPD60R1K0PFD7SAUMA1 is a 600V N-channel CoolMOS™ PFD7 superjunction power MOSFET rated for 4.7 A continuous drain current and 26 W power dissipation in a PG-TO252-3 (DPAK) surface-mount package. It features a typical on-resistance of 1 Ω at VGS=10V and a gate charge of 6 nC, targeting cost-sensitive consumer applications where high efficiency and high power density must coexist with a competitive price/performance ratio. A superjunction MOSFET is a high-voltage power switch built on a deep-trench charge-balancing structure that lets designers push breakdown voltage into the 500-700 V range while keeping R DS(on) far lower than conventional planar MOSFETs of the same die area. CoolMOS™ PFD7 sits in the broader Infineon CoolMOS™ family — a lineage of superjunction (SJ) MOSFETs — under the umbrella of high-voltage discrete semiconductors and ultimately power-management ICs. This platform iteration optimizes switching loss, body-diode ruggedness, and ease-of-use for hard-switching topologies. Key specifications include 600 V drain-source breakdown, 4.7 A continuous ID (TC), 1 Ω R DS(on) max at VGS=10V, a 230 pF output capacitance (Coss) at 400 V, and an ultra-low gate charge QG of 6 nC. The device is fully avalanche-rated and offers fast body-diode recovery, simplifying snubber design in bridge topologies. The PG-TO252-3 package provides a low thermal resistance path when soldered to a sufficiently large copper pad. The PFD7 architecture combines the fast-switching benefits of a 2nd-generation superjunction MOSFET with state-of-the-art ease-of-use and price/performance for consumer markets. Its integrated Zener-protected gate and optimized internal source-bonding wire layout enable excellent dv/dt immunity, while the low Qoss reduces turn-on losses in resonant and soft-switching converters. The technology meets the highest efficiency standards and supports high power density, enabling very slim designs. Typical applications include AC-DC chargers and adapters (flyback and quasi-resonant), motor drives for small white goods and pumps, LED lighting drivers, auxiliary and standby SMPS in appliances, and cost-optimized industrial power conversion. Designers select this part when balancing high-voltage blocking, low conduction loss, and small form factor in price-sensitive products. When designing with this device, place the gate-drive resistor close to the gate pin to suppress parasitic ringing, and ensure the drain pad has at least 1 square inch of continuous copper for proper thermal dissipation. Use a 10V gate drive for full enhancement into the rated R DS(on) curve. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
The Infineon IPD60R210PFD7SAUMA1 is a 600V N-channel superjunction power MOSFET from the CoolMOS PFD7 family, delivering 16A continuous drain current (Tc) with 210 mOhm maximum on-resistance in a TO-252 (DPAK) surface-mount package. Rated at 64W power dissipation (Tc), it is engineered for high-efficiency consumer and industrial switched-mode power supply applications where low switching losses and high power density are required. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern switch-mode power supplies, motor drives, and power-factor-correction stages. Superjunction (SJ) MOSFETs like the CoolMOS PFD7 family use a vertical alternating p-n column structure to simultaneously achieve high breakdown voltage (>500V) and very low on-resistance per unit area, surpassing the silicon limit of conventional planar MOSFETs. This positions superjunction MOSFETs in the high-voltage (>400V) tier of the power-MOSFET hierarchy, between standard planar MOSFETs (low-voltage) and emerging GaN/SiC wide-bandgap devices. Key features of the IPD60R210PFD7SAUMA1 include a 600V drain-source breakdown voltage, an integrated fast body diode optimized for hard-switching bridge topologies, reduced gate charge (Qg) for lower drive losses, and best-in-class figure-of-merit (RDS(on) x Qg) for high-frequency operation. The PFD7 platform targets consumer-grade SMPS, LED lighting drivers, and auxiliary power supplies in white goods and audio amplifiers. The device is built on Infineon's 7th-generation superjunction technology, integrating a tightly controlled charge-balance cell structure that reduces both conduction losses (RDS(on)) and switching losses (Eoss, Qrr) versus the prior PFD6 generation. The integrated fast-recovery body diode further minimizes dead-time losses in totem-pole PFC and half-bridge LLC converters. The 210 mOhm on-resistance class targets applications requiring 50W to 300W continuous output power. Typical applications include switched-mode power supplies (SMPS) for LCD TVs and white goods, LED lighting drivers, AC-DC converters with active PFC, and 600V-class industrial auxiliary supplies. The TO-252 (DPAK) package is the de-facto consumer-grade surface-mount power package, supporting single-side PCB cooling via a thermal pad. When designing with this device, ensure the gate-drive voltage exceeds 10V to fully enhance the channel and minimize RDS(on). The tab is electrically connected to the drain; PCB layout must preserve clearance between the tab copper and low-voltage traces to maintain creepage distances at 600V stress. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond the manufacturer datasheet to accelerate component selection for high-voltage SMPS designs.
IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPD60R280P7SAUMA1 is a 600 V N-channel superjunction (SJ) power MOSFET from the CoolMOS™ P7 seventh-generation platform, rated for 12 A continuous drain current (Tc) and 53 W power dissipation (Tc) in a surface-mount PG-TO252-3 (DPAK) package. Built on Infineon's proprietary superjunction principle, it delivers a typical RDS(on) of 280 mΩ and combines the fast-switching characteristics of SJ technology with very low ringing tendency and excellent ease-of-use. What is a superjunction MOSFET? A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P/N epitaxial layers to achieve a much lower on-resistance per unit area than conventional planar MOSFETs at the same voltage rating. Superjunction MOSFETs are widely used as the primary switching element in switched-mode power supplies (SMPS), power-factor correction (PFC) stages, and motor drives, sitting in the broader hierarchy of discrete semiconductors -> MOSFETs -> power MOSFETs -> high-voltage superjunction MOSFETs. Key features of the IPD60R280P7SAUMA1 include an integrated ESD protection diode, ±20 V maximum gate-source voltage rating, an integrated gate-source resistor for EMI control, and a low gate charge (Qg) that minimizes driver losses. The CoolMOS P7 platform is the successor to the P6 family, offering improved switching performance and body-diode robustness while maintaining drop-in compatibility with prior 600 V P6 footprints. The internal superjunction structure yields an exceptionally low specific on-resistance (RDS(on) × area) for the 600 V class, enabling higher power density in compact designs such as the DPAK outline. The integrated gate resistor reduces the need for external gate-series components and helps suppress ringing in half-bridge and PFC topologies. The device is qualified for both consumer and industrial use. Typical applications include hard-switching PFC stages, LLC and quasi-resonant flyback converters in SMPS, LED lighting drivers, solar inverters, and e-mobility auxiliary converters. Its 280 mΩ RDS(on) makes it particularly well suited to mid-power designs where conduction and switching losses must be balanced. When designing with the IPD60R280P7SAUMA1, ensure the gate-driver voltage swing exceeds the threshold (4 V max) with a recommended 10 V drive for full RDS(on) performance. The integrated gate-source resistor mitigates ringing, but PCB layout still matters: minimize the gate-loop and power-loop inductance to avoid voltage overshoot. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, providing engineers with a faster path from selection to prototype.
IPD60R2K0PFD7SAUMA1 - 600V CoolMOS PFD7 N-Channel MOSFET | Infineon
The Infineon IPD60R2K0PFD7SAUMA1 is a 600 V N-channel superjunction power MOSFET in the CoolMOS PFD7 family, packaged in a 3-pin PG-TO252-3-344 (DPAK) surface-mount outline. Per the manufacturer datasheet, it delivers 3 A continuous drain current at TC, 20 W power dissipation at TC, and a typical on-resistance of 2000 milliohm at VGS = 10 V, optimized for consumer-grade switched-mode power supplies. The device is part of Infineon's PFD7 series that complements the CoolMOS 7 platform targeting high-efficiency, cost-sensitive consumer power conversion. A superjunction MOSFET is a power-MOSFET architecture that uses alternating p- and n-type epitaxial columns in the drift region to break the classical silicon limit of on-resistance versus breakdown voltage. CoolMOS PFD7 specifically refines gate charge and output capacitance for high-frequency flyback, PFC, and half-bridge topologies, giving designers the energy-efficiency benefits of wide-bandgap switches at silicon price points. The technology belongs to the broader hierarchy of power MOSFETs > discrete semiconductors > power management building blocks. Key specifications include 600 V drain-source breakdown, 2000 milliohm R_DS(on) at VGS = 10 V, ultra-low gate charge Qg (typ. optimized for the 2 ohm class), an integrated anti-parallel body diode suitable for hard-switching rectification, and a TO-252 DPAK outline providing thermal resistance compatible with consumer adapter power densities. The part carries an MSL2 moisture rating and is supplied on 13-inch reels with 2500-piece standard pack quantity. Typical applications include smartphone and tablet travel adapters, open-frame SMPS for white goods and TV auxiliaries, LED lighting drivers, and auxiliary rails in appliance motor control. The 600 V rating provides ample margin for universal-input 85-265 VAC rectified rails, and the 3 A current capability targets sub-50 W flyback designs where conduction loss dominates over switching loss. When designing with this device, gate-drive voltage should be held at 10 V typical with a gate-source resistor below 100 ohm for clean turn-off in hard-switched PFC stages. Always verify repetitive avalanche energy (E_AR) against inrush conditions and place sufficient copper area on the drain tab to maintain junction temperature below 150 C in enclosed adapters. This page synthesizes distributor pricing snapshots, drop-in pin-compatible alternatives, and practical DPAK thermal guidance not consolidated in the manufacturer datasheet, enabling faster component selection and second-source qualification.
IPD60R360P7ATMA1 - 600V CoolMOS P7 MOSFET, 360mOhm, 9A | Infineon
The Infineon IPD60R360P7ATMA1 is a 600 V N-channel power MOSFET from Infineon's CoolMOS™ P7 superjunction family, rated at 360 mΩ maximum R<sub>DS(on)</sub> and 9 A continuous drain current (T<sub>C</sub>), dissipating up to 41 W in a surface-mount PG-TO252-3 (DPAK) package. What is a CoolMOS MOSFET? A CoolMOS is a superjunction (SJ) high-voltage power MOSFET pioneered by Infineon. It belongs to the MOSFET family of power transistors, which sit in the broader hierarchy of discrete semiconductors → power switches → power MOSFETs → superjunction MOSFETs. Superjunction devices replace the conventional planar DMOS drift region with alternating P/N columns, dramatically reducing R<sub>DS(on)</sub>×A figure of merit and enabling higher switching frequencies with lower conduction and switching losses than planar MOSFETs of the same voltage class. Key features of the IPD60R360P7ATMA1 include 600 V drain-source breakdown voltage, a low typical gate charge Q<sub>g</sub> suited for hard-switched topologies, integrated ESD protection rated >2 kV HBM, and very low ringing tendency that simplifies EMI filter design. It is the industrial-grade successor to the CoolMOS P6 series, targeting high-efficiency SMPS, TV adapters, LED lighting drivers and auxiliary power supplies. The P7 generation uses Infineon's seventh-generation superjunction platform, combining fast switching SJ performance with excellent ease-of-use characteristics such as a wide safe operating area, improved body-diode robustness, and outstanding light-load efficiency from a low stored output charge Q<sub>oss</sub>. Compared to P6, P7 offers better R<sub>DS(on)</sub>/package efficiency enabled by an R<sub>DS(on)</sub>×A figure of merit below 1 Ω·mm². Typical applications include switch-mode power supplies (SMPS), TV and monitor standby supplies, telecom auxiliary converters, LED lighting drivers, e-bike and power-tool chargers, and industrial power supplies. The wide 600 V rating provides ample margin for universal-mains (85-265 V<sub>AC</sub>) PFC and flyback front-end stages. When designing with this device, place the gate-drive resistor close to the gate pin to damp parasitic ringing, and provide adequate heatsinking at the DPAK tab - the 41 W T<sub>C</sub> rating is only achievable with the tab soldered to a sufficient copper pour. Leave at least 4 mm creepage between the drain pad and low-voltage traces because of the high V<sub>DS</sub>. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers accelerate selection and second-source validation.
IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon
The Infineon IPD60R360P7SAUMA1 is a 600 V N-channel power MOSFET built on Infineon's CoolMOS P7 superjunction (SJ) technology platform, delivering a maximum drain current of 9 A at TC, a static drain-source on-resistance of 360 mOhm, and 41 W of continuous power dissipation in the industry-standard PG-TO252-3 (DPAK) surface-mount package. The seventh-generation CoolMOS design is the successor to the P6 series, combining the fast-switching behavior characteristic of superjunction devices with substantially improved ease-of-use, including very low ringing tendency and outstanding body-diode robustness. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and switch electrical energy in power-electronics systems. The CoolMOS P7 superjunction MOSFET family occupies the high-voltage branch of the discrete MOSFET tree (high-voltage power MOSFET -> MOSFET -> transistor -> discrete semiconductor), and it is widely used in switched-mode power supplies, power-factor correction, and motor drive stages where 500 V to 700 V blocking capability and low conduction loss are required. Key parametric highlights include a 600 V drain-source breakdown voltage (V(BR)DSS), a typical RDS(on) of 360 mOhm at VGS = 10 V, a gate threshold voltage in the 3.0 V to 4.5 V range, and a low gate charge that enables high switching frequencies. The integrated body diode is optimized for hard-commutation duty in PFC and LLC topologies, and the TO-252 outline supports standard DPAK land patterns for direct PCB compatibility with second-source designs. In PFC boost, LLC half-bridge, and flyback converters, the IPD60R360P7SAUMA1 is typically deployed as the main switching element where its low RDS(on) reduces conduction loss and its fast switching speed shrinks magnetic components. Industrial SMPS, LED lighting drivers, and solar inverter auxiliary rails benefit similarly from its thermal and switching balance. When laying out the PCB, keep the source-tab copper pour large enough to keep the junction temperature within SOA limits and minimize parasitic source inductance to suppress turn-on ringing. Pair the gate driver with a small gate-source resistor (typically 10 ohm to 47 ohm) to damp dv/dt-induced ringing without sacrificing switching loss. This page synthesizes distributor pricing, drop-in CoolMOS alternatives, and practical design notes not found in the manufacturer datasheet alone, giving power-supply engineers a single-source reference for part selection and sourcing.
IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
The Infineon IPD60R380C6ATMA1 is a 600 V N-channel CoolMOS C6 superjunction power MOSFET with 380 mOhm maximum RDS(on), 10.6 A continuous drain current (Tc), and 83 W power dissipation (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package. It combines Infineon's leading superjunction technology experience with a fast-switching architecture that does not sacrifice ease of use, making it suitable for both hard- and soft-switching topologies. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant active switch in modern switch-mode power supplies, motor drives, and power-factor-correction stages. The CoolMOS C6 family belongs to the superjunction MOSFET category, which breaks the silicon limit of conventional planar MOSFETs by using a vertical charge-balance structure. This positions the C6 within the power-semiconductor hierarchy: MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage power switch. CoolMOS C6 is the successor to the C3/CFD families and is engineered as a general-purpose 500 V-950 V platform optimized for efficiency, ease of use, and cost. Key features include 380 mOhm maximum static drain-source on-resistance at VGS = 10 V, a 600 V drain-source breakdown voltage that provides wide margin for 400 V rectified bus rails, integrated ESD protection to improve handling robustness, low gate charge Qg for reduced driver losses, and an intrinsic fast body diode suitable for bridge-topology switching. The PG-TO252-3 (DPAK) surface-mount package is thermally efficient thanks to an exposed drain tab that doubles as the heatsinking land pattern. Technically, the C6 cell uses a deep-trench superjunction structure with optimized compensation doping, lowering area-specific on-resistance versus planar 600 V MOSFETs. Compared with CoolMOS P6/CFD variants that target resonant topologies, the C6 is positioned as a flexible workhorse for PFC, LLC, and hard-switched flyback stages. Gate threshold is in the standard 3 V-4 V range with full enhancement at 10 V VGS, and the device is specified avalanche-energy rated for unclamped inductive switching events. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) boost stages, solar inverters, telecom rectifiers, server and telecom auxiliary supplies, electronic ballasts for lighting, and motor-drive half-bridges. The 600 V rating plus 10.6 A continuous current positions the part at the heart of mid-power converters up to roughly 1.5 kW. When designing with the IPD60R380C6ATMA1, the exposed back-side drain pad must be soldered to a sufficiently large copper area (typically 1-2 square inches on a 2 oz board) to keep junction temperature within the 150 C limit. A 10 V gate-drive is required to achieve the datasheet RDS(on); driving at 5 V will leave the device in partial enhancement and increase conduction losses dramatically. Always observe the SOA curve at high VDS and high di/dt conditions. This page synthesizes distributor pricing, drop-in alternatives from the Infineon CoolMOS family and competing superjunction MOSFETs, plus practical design notes not consolidated in any single datasheet. Engineers can use the comparison_table and design_notes sections to accelerate selection.
IPD60R385CPATMA1 - 600V 385mΩ CoolMOS™ CP MOSFET | Infineon
The Infineon IPD60R385CPATMA1 is a 600V N-channel CoolMOS™ CP power MOSFET with a maximum drain-source on-resistance of 385 mΩ, housed in the surface-mount PG-TO252-3 (DPAK) package. It is rated for 9 A continuous drain current at 25 °C case temperature and 83 W power dissipation, with a pulsed drain current capability of 27 A. The device is part of Infineon's fifth-generation CoolMOS™ CP family, optimized for hard- and soft-switching topologies such as CCM PFC, PWM for ATX power supplies, notebook adapters, PDP and LCD TV power stages, and general-purpose SMPS applications. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate-insulator interface to modulate a conduction channel between source and drain terminals. Within the broader taxonomy, MOSFETs are a subclass of FETs (field-effect transistors) which are themselves a family of discrete semiconductors used as the active switching element in switch-mode power supplies, motor drives, and solid-state relays. CoolMOS™ CP adds Infineon's proprietary compensated super-junction structure, which lowers the area-specific on-resistance (RDS(on) × A) by roughly an order of magnitude versus planar 600V MOSFETs of the same generation, reducing both conduction and switching losses. Key specifications include a 600 V drain-source breakdown voltage (V(BR)DSS), 385 mΩ typical RDS(on) at VGS = 10 V, a typical gate charge of 18 nC, and an ultra-low reverse-recovery charge (Qrr) characteristic of the CP family. The fast intrinsic body diode and low Qrr make the part well-suited to bridge topologies where the intrinsic diode conducts during dead-time, simplifying PFC and LLC designs without requiring an external anti-parallel diode. The PG-TO252-3 package (DPAK) provides a low thermal resistance path (~62 °C/W junction-to-case typical) via the drain tab, enabling compact heatsink-less designs at moderate power levels. Typical applications include continuous-conduction-mode (CCM) PFC stages in 200 W to 600 W PC silver-box and adapter power supplies, half-bridge and full-bridge converters in LCD/PDP TV main power sections, and 600V-class switch-mode power supplies in industrial and consumer equipment. The 600V rating also supports offline rectified mains operation in 230V AC and universal-input designs with adequate derating margin. When designing with this device, ensure the gate-drive voltage reaches at least 10 V for full RDS(on) specification. A gate resistor in the 10 Ω to 47 Ω range helps control switching speed and EMI. Because the package tab is electrically tied to the drain, PCB layout must provide a sufficiently large drain copper pour acting as a thermal dissipator and as part of the high-voltage clearance boundary.
IPD60R600C6 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
The Infineon IPD60R600C6 is a 600 V N-channel CoolMOS C6 superjunction power MOSFET rated at 7.3 A continuous drain current and 600 mOhm on-resistance, packaged in the surface-mount PG-TO252-3 (DPAK) footprint. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and regulate electrical energy in switched-mode power supplies, motor drives, and power-factor-correction stages. CoolMOS C6 is Infineon's sixth-generation superjunction technology, which reduces R DS(on) * area product compared to conventional planar MOSFETs while maintaining fast switching and ease of use. Key specifications include a 600 V drain-to-source voltage rating (V DSS), 7.3 A continuous drain current at 25 C case temperature (I D), 600 mOhm maximum static on-resistance (R DS(on)) at V GS = 10 V, and 63 W maximum power dissipation (P D) at T C = 25 C. The device is housed in a PG-TO252-3 surface-mount package, also known as DPAK, providing a low-profile outline with an exposed thermal pad for PCB heatsinking. The CoolMOS C6 architecture uses a deep-trench superjunction structure to achieve a low specific on-resistance while keeping the body diode robust enough for hard-switching topologies. Compared to older C3 and CFD families, C6 simplifies gate-drive requirements and offers an improved Figure-of-Merit (FOM = R DS(on) * Q G) that translates into lower conduction and switching losses in PFC, LLC, and flyback converters. Typical applications include PFC boost stages in 400 V SMPS, solar inverters, LED drivers, HID lamp ballasts, and industrial auxiliary power supplies. The 600 V rating provides ample margin for 230 V AC rectified rails (peak ~325 V) and 380 V DC bus operation. When designing with IPD60R600C6, select a gate-drive voltage of 10 V to fully enhance the channel and minimize R DS(on). Keep the switching loop inductance low by minimizing the drain-to-bypass-capacitor distance, since superjunction MOSFETs switch quickly and are sensitive to parasitic inductance. This page synthesizes distributor pricing, drop-in CoolMOS alternatives in PG-TO252-3, and practical PFC design notes not collected in a single location in the Infineon datasheet.
IPD60R600C6ATMA1 - 600V 600mΩ CoolMOS C6 N-MOSFET | Infineon
The Infineon IPD60R600C6ATMA1 is a 600 V N-channel power MOSFET built on Infineon's CoolMOS C6 superjunction technology, offering 600 mΩ maximum RDS(on) and 7.3 A continuous drain current in a surface-mount PG-TO252-3 (DPAK) package. The part is supplied on tape and reel (ATMA1 suffix) and is part of Infineon's 500-950 V CoolMOS C6 family optimized for high-voltage, hard-switching topologies. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. The CoolMOS C6 family is a superjunction (SJ) MOSFET generation that combines ultra-low area-specific on-resistance with fast switching speed and ease of use, representing the evolutionary successor to standard high-voltage MOSFETs and a key member of the broader power-MOSFET -> discrete semiconductor -> electronic component taxonomy. Key specifications include 600 V drain-source breakdown voltage (V(BR)DSS), 600 mΩ maximum RDS(on) at VGS = 10 V, 7.3 A continuous drain current at 25 °C case temperature, and 63 W maximum power dissipation. The part uses an industry-standard TO-252 (DPAK) land pattern that is mechanically and thermally compatible with second-source DPAK MOSFETs, simplifying PCB layout reuse. The CoolMOS C6 superjunction architecture reduces both conduction losses (low RDS(on) per unit area) and switching losses (low Qgd and low Qrr), enabling higher switching frequencies and higher power density in SMPS, PFC, and lighting applications compared with conventional high-voltage MOSFETs. The intrinsic fast-body-diode behavior makes C6 parts particularly suited to hard-switched bridge topologies where diode reverse recovery is critical. Typical applications include switched-mode power supplies (SMPS), power factor correction (PFC) boost stages, electronic ballasts and LED lighting drivers, DC-DC converters, and motor-control inverter bridges operating from rectified 110/230 V AC mains. The 600 V drain rating provides ample derating margin on universal-input supplies (rectified 110 V yields ~155 V DC; rectified 230 V yields ~325 V DC). The DPAK package suits through-hole-reflow-compatible designs. When designing with this device, gate-drive voltage must reach 10 V (typical) to achieve the rated RDS(on); logic-level gate drive is not sufficient. Continuous drain current is thermally limited, and PCB copper area under the DPAK tab must be sized for the application's steady-state dissipation (per the datasheet thermal resistance). For high-side switches, verify that the gate driver can withstand the C6 VGS rating. This page synthesizes distributor stock, pricing, drop-in DPAK alternatives, and practical design notes not consolidated in the Infineon datasheet, providing a single-page engineering reference for sourcing and selection.
IPD60R600P6ATMA1 - 600V 7.3A CoolMOS P6 MOSFET | Infineon
The Infineon IPD60R600P6ATMA1 is a CoolMOS P6 series N-channel power MOSFET rated at 600V drain-source voltage and 7.3A continuous drain current (at Tc), packaged in the surface-mount PG-TO252-3 (DPAK) outline with a maximum power dissipation of 63W (Tc). It uses Infineon's CoolMOS P6 superjunction technology to deliver 540 mOhm typical on-state resistance while keeping switching losses low for hard-switched and resonant topologies. The device targets industrial-grade power-conversion applications where both efficiency and ruggedness are required. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an electric field at the gate to modulate conduction between drain and source terminals. N-channel MOSFETs are the dominant choice for high-voltage power conversion because the majority carrier (electron) transport yields low conduction loss. The CoolMOS P6 family sits in the broader taxonomy of discrete semiconductors > MOSFETs > superjunction MOSFETs > 600V-class high-voltage MOSFETs > power management, and the IPD60R600P6ATMA1 is the medium-Rds(on) member of the 600V P6 lineup. Key features of the IPD60R600P6ATMA1 include 540 mOhm Rds(on) (max), integrated fast-recovery body diode for hard commutation, low gate charge (Qg) and low Qrr for reduced switching loss, and a TO252 (DPAK) footprint optimized for high-density PCB layouts. It supports continuous Vds of 600V and avalanche-rated transient energy, plus an operating junction range up to 150C, making it suitable for thermally demanding environments. Architecturally, the CoolMOS P6 cell uses a deep-trench superjunction structure that splits the voltage-blocking layer into alternating P/N pillars, breaking the silicon limit of conventional MOSFETs. The result is a much better Figure-of-Merit (Rds(on) x Qg) than planar 600V parts, allowing compact converters to switch at higher frequencies with smaller magnetics. The integrated body diode has been tuned to reduce reverse-recovery charge, which lowers losses in bridge and PFC topologies. Typical applications include PFC stages in PC Silverbox and adapter designs, hard-switched PWM stages and resonant switching stages in LCD/PDP TV, lighting ballasts, server SMPS, telecom rectifiers and UPS inverters. The device is also widely used as a 600V-class main switch in small offline flyback and forward converters. When designing with the IPD60R600P6ATMA1, mind the DPAK thermal envelope: at 7.3A and 600V the silicon is capable, but the package requires careful PCB copper-pour design and, in continuous high-current paths, a topside thermal pad stitched with vias to a heatsink or copper plane to keep Tj within the 150C rating.
IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon
The Infineon IPD60R600P7ATMA1 is a 600 V N-channel power MOSFET built on the CoolMOS P7 superjunction (SJ) platform, housed in a surface-mount PG-TO252-3 (DPAK) package and rated for 6 A continuous drain current at TC with 30 W power dissipation. The CoolMOS P7 series succeeds the CoolMOS P6 series, combining a fast-switching SJ MOSFET architecture with very low ringing tendency and outstanding ease-of-use for high-voltage power conversion stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that regulates current flow in power conversion circuits. CoolMOS superjunction MOSFETs represent a class of high-voltage MOSFETs that use deep-pillar charge-balance structures to simultaneously achieve low on-state resistance (RDS(on)), low switching losses, and high breakdown voltage. They sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> high-voltage superjunction MOSFETs -> power management switches, and are the workhorse of switch-mode power supplies (SMPS), power-factor correction (PFC) stages, and motor drives. Key specifications include 600 V drain-source breakdown voltage (VDS), 490 mOhm maximum RDS(on), a 6 A continuous drain current rating (TC), an ultra-low effective output capacitance, and an integrated gate protection structure. The P7 platform adds improved body-diode robustness, very low gate charge (Qg), and reduced EMI emission, allowing higher switching frequencies in LLC, PFC, and flyback topologies without gate-driver redesign. Typical applications span 600 V-class switch-mode power supplies (SMPS), power-factor correction (PFC) front stages, solar inverters, lighting ballasts, and auxiliary power supplies for industrial and consumer appliances. The TO-252 (DPAK) footprint supports surface-mount assembly with a low thermal resistance path through the exposed tab. Design considerations for this part include adequate heatsinking to dissipate the 30 W rated power, gate-drive voltage of 10 V for full RDS(on) enhancement, and a snubber or careful layout to manage switching transients. Compared with planar MOSFETs of equivalent rating, the P7 superjunction structure trades somewhat higher avalanche energy capability for much lower conduction and switching losses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
The Infineon IPD60R600PFD7SAUMA1 is a 600V, 6A N-channel power MOSFET built on Infineon's CoolMOS™ PFD7 superjunction technology, housed in a surface-mount PG-TO252-3 (DPAK) package with a maximum on-resistance of 600 mΩ at 10 V VGS. The device combines the fast-switching benefits of the second-generation CoolMOS superjunction (SJ) platform with a low R_DS(on) of 0.6 Ω, making it suited for high-voltage, energy-efficient SMPS topologies. According to the Infineon datasheet, the series targets the price/performance sweet spot while supporting high power-density designs. What is a superjunction MOSFET? A superjunction MOSFET (also called a CoolMOS™ by Infineon) is a high-voltage power MOSFET that uses a charge-compensation structure (alternating P/N epitaxial columns) instead of the conventional planar or trench drift region. This design simultaneously shrinks the on-resistance per area and improves switching performance, making it superior to standard MOSFETs in the 500V–900V range for offline converters, server PSUs, telecom rectifiers, EV chargers, and industrial motor drives. Within the broader taxonomy, superjunction MOSFETs belong to power MOSFETs -> discrete power semiconductors -> power management. Key features of the IPD60R600PFD7SAUMA1 include a 600V drain-source voltage rating, continuous drain current of 6 A at T_C, total gate charge of 8.5 nC, output capacitance of 8 pF at 400 V, a 31 W power dissipation rating, and an integrated fast-body diode that supports hard-switched bridge topologies. The part is qualified to the consumer JEDEC moisture sensitivity level and is supplied in tape-and-reel packaging optimized for high-volume SMT lines. Typical applications include switched-mode power supplies (SMPS), PFC boost stages, LLC half-bridge converters, lighting ballasts, and industrial auxiliary power supplies. The DPAK footprint offers improved thermal coupling to the PCB copper pour versus smaller SOT packages, enabling compact 30–120 W adapters without external heatsinking above moderate ambient temperatures. A key design consideration is that the R_DS(on) of 600 mΩ makes this part best suited to 600V-class converters at switching frequencies between 65 kHz and 130 kHz; above ~150 kHz the conduction loss becomes a noticeable share of total loss in continuous-conduction PFC. Ensure the gate-drive voltage reaches 10 V for full enhancement and that the layout minimizes the high-side drain loop inductance to avoid dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes (thermal, layout, gate-drive) not found in the manufacturer datasheet alone, providing engineers with a complete decision profile for selecting or replacing the IPD60R600PFD7SAUMA1 in 600V-class power designs.
IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon
The Infineon IPD65R225C7ATMA1 is a 650 V N-channel power MOSFET built on Infineon's CoolMOS™ C7 super-junction (SJ) technology, housed in a surface-mount PG-TO252-3 (DPAK) package. It is rated for 11 A continuous drain current at TC, 63 W power dissipation at TC, and a maximum on-resistance of 225 mΩ, with avalanche ruggedness specified for hard-switching industrial power-conversion stages. A power MOSFET is a voltage-controlled three-terminal semiconductor switch (gate, drain, source) that conducts current between drain and source when a gate-source voltage above its threshold is applied. Super-junction MOSFETs such as the CoolMOS C7 family replace the conventional planar DMOS structure with alternating P/N epitaxial columns, dramatically reducing on-resistance per unit area and cutting switching-charge losses. Within the broader taxonomy, this part belongs to: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> high-voltage SJ MOSFET family. Key features include a 650 V drain-source breakdown voltage (VDSS), typical RDS(on) of 225 mΩ at VGS = 10 V, low gate charge (Qg) optimized for high-frequency operation, an integrated body diode for hard commutation, and increased dv/dt ruggedness. The CoolMOS C7 series delivers the lowest Figure-of-Merit (RDS(on) × Qg) of any 600/650 V MOSFET in its generation, enabling smaller magnetics and higher power density in switched-mode power supplies. The architecture uses charge-compensation pillars in the drift region to simultaneously achieve low RDS(on) and low Eoss, reducing both conduction and turn-on switching losses. Compared with the preceding C3/C6 generations, C7 trims Qg, Qgd, and Eoss by roughly 30-50%, which directly translates to lower switching losses at 100 kHz+ PWM frequencies typical of modern SMPS designs. Typical applications include telecom and server switch-mode power supplies (SMPS), PFC boost stages, LLC and half-bridge resonant converters, industrial motor drives, solar inverters, and EV on-board chargers. Designers select this part when balancing conduction loss against switching loss in 100-500 kHz hard-switched converters, and when needing a thermally efficient surface-mount package that bolts directly to a PCB copper pad as the tab heatsink. When designing with this device, ensure the gate-drive voltage swings cleanly between 0 V and 10-12 V; under-driven gates inflate RDS(on) and conduction loss. The exposed tab (drain) must be soldered to a copper pad of at least 1 square inch per ampere of continuous drain current, otherwise thermal resistance and SOA derating will be violated. This page synthesizes distributor pricing, parametric data, and same-family drop-in alternatives across the CoolMOS C7 lineup, providing engineering context not consolidated on the manufacturer datasheet.
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΩ 10.6A | Infineon
The Infineon IPD65R380E6ATMA1 is a 650V N-channel CoolMOS™ E6 superjunction power MOSFET rated at 380 mΩ on-resistance and 10.6 A continuous drain current in a surface-mount PG-TO252-3 (DPAK) package. It combines Infineon's leading superjunction technology with optimized ease-of-use, targeting industrial and consumer high-voltage switching applications such as SMPS, lighting ballasts, and auxiliary power supplies. Key headline parameters are 650 V drain-source breakdown voltage (V(BR)DSS), 380 mΩ maximum R_DS(on) at 10 V V_GS, and 10.6 A continuous I_D at T_C = 25 °C. A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts electrical energy by modulating current flow between its drain and source terminals under gate-source bias. CoolMOS™ E6 belongs to the superjunction MOSFET family, which uses a deep-trench charge-compensation structure to dramatically reduce on-resistance per unit area compared with conventional planar MOSFETs at the same voltage rating. This places the part in the broader hierarchy of discrete semiconductors → transistors → MOSFETs → superjunction MOSFETs → high-voltage power MOSFETs. Key differentiating specifications include a typical R_DS(on) of 380 mΩ at V_GS = 10 V / I_D = 3.2 A, an integrated body diode with reverse-recovery charge suitable for hard-switching bridges, and an ultra-low gate charge Q_G = 39 nC at 10 V that minimizes driver losses at high switching frequencies. The device supports continuous drain current up to 10.6 A at T_C and a pulsed avalanche rating for transient robustness. Thermal resistance is engineered for the DPAK land pattern, allowing standard SMT reflow and bottom-side copper cooling. Architecturally, CoolMOS™ E6 uses Infineon's mature charge-compensation principle with optimized cell pitch, achieving an excellent FOM (R_DS(on) × Q_G) that enables higher switching frequencies and therefore smaller magnetics in SMPS designs. The E6 generation emphasizes best-in-class efficiency at light load and excellent body-diode ruggedness, making it well-suited to both hard-switched PFC and LLC topologies. Typical applications include telecom and server SMPS, industrial motor drives, solar micro-inverters, e-bike chargers, and CCFL/LED lighting ballasts where 650 V breakdown and low conduction loss are mandatory. Designers select this part when they need a proven superjunction platform with broad second-source ecosystem rather than the newest generation silicon. When designing with the IPD65R380E6ATMA1, observe the DPAK land pattern, minimize gate-loop inductance to avoid V_GS ringing above the ±20 V rating, and provide sufficient drain-side copper for thermal dissipation. Avoid exceeding the avalanche energy rating during transformer-reset events. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single, citation-ready reference for the IPD65R380E6ATMA1.
IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252
The TXF (Infineon) IPD70N10S312ATMA1 is an N-channel OptiMOS-T power MOSFET rated for 100 V drain-source breakdown, 70 A continuous drain current (Tc), and 125 W power dissipation (Tc), housed in a surface-mount PG-TO252-3-11 (DPAK) package with 2 leads plus tab. It belongs to Infineon's automotive-grade OptiMOS-T family and is qualified to AEC-Q101, MSL1 up to 260 °C peak reflow, with a 175 °C operating junction temperature ceiling and 100 % avalanche testing per the manufacturer datasheet. An N-channel power MOSFET is a voltage-controlled majority-carrier switch that conducts current between drain and source when a sufficient positive gate-source voltage (VGS) is applied above its threshold. The OptiMOS-T family in particular is a trench-technology power-MOSFET line optimized for low on-state resistance per unit area (low RDS(on)) and high switching speed, sitting in the broader hierarchy: power MOSFET -> discrete semiconductor -> semiconductor -> electronic component. These devices are the workhorse switches in DC-DC converters, motor drivers, and automotive load-control subsystems. Key differentiating specifications include an ultra-low RDS(on) of 11.1 mΩ at 70 A / 10 V VGS, a +/-20 V gate-source rating, 4355 pF input capacitance (Ciss) at 25 V, and 65 nC total gate charge (Qg) at 10 V. These translate into low conduction and switching losses, which means higher efficiency and easier thermal design even at the part's 70 A continuous rating. The DPAK (PG-TO252-3-11) footprint is a long-established industry-standard SMD outline with a large metal tab that doubles as the drain terminal and provides a low thermal-resistance path (theta_JC) to a PCB copper heatsink. Architecturally, OptiMOS-T uses Infineon's deep-trench cell process with an optimized stripe geometry to maximize channel width per silicon area, yielding the low 11.1 mΩ figure. The part is 100 % avalanche-rated, which means the datasheet's single-pulse avalanche energy (EAS) is guaranteed on every unit - a critical reliability parameter for unclamped inductive switching in automotive and industrial environments. Typical applications include 12 V and 24 V automotive ECUs (electric power steering, braking, transmission), high-current DC-DC converter switching stages, motor-drive H-bridges (half-bridge and low-side switch roles), and industrial solenoid/relay drivers. The 100 V VDS rating gives significant headroom for 24 V bus transients and inductive load recirculation. Design consideration: although the 11.1 mΩ RDS(on) is low, the DPAK package must be soldered to at least 1 square inch of copper pour on the PCB to keep the junction below 175 °C at full load - a smaller pad risks thermal runaway at high continuous current. Gate drive should be 10 V standard (logic-level not supported) with a series gate resistor in the 10-100 Ω range to damp ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
The Infineon IPD70N10S312ATMA2 is an N-channel OptiMOS-T power MOSFET rated for 100 V drain-source voltage and 70 A continuous drain current (at Tc), dissipating up to 125 W, and packaged in the surface-mount PG-TO252-3-11 (DPAK) outline. Built on Infineon's mature OptiMOS-T trench process, it targets high-efficiency switching power conversion where low on-state resistance and fast switching transitions are required. A power MOSFET is a voltage-controlled semiconductor switch used in switched-mode power supplies, motor drives, and load-management circuits. The N-channel enhancement-mode type is the most common building block because it offers lower on-resistance per unit silicon area than P-channel equivalents. MOSFETs sit inside the broader discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor device, and are essential building blocks of modern power-electronics systems spanning consumer, industrial, and automotive 12 V / 24 V / 48 V buses. Key specifications include a 100 V VDS rating, 70 A continuous ID (Tc), 125 W power dissipation, and an ultra-low typical RDS(on) achieved through the OptiMOS-T cell design. The device is fully avalanche-rated and characterized for hard-switching topologies. Its low gate charge and figure-of-merit (FOM) reduce driver losses, making it well-suited to high-frequency SMPS stages where total switching loss directly limits converter efficiency. Typical applications include DC-DC converters, synchronous rectification in SMPS, motor control H-bridges, battery protection and OR-ing switches, eFuse and hot-swap circuits, and load-switching in industrial automation. The 100 V rating provides ample margin for 24 V industrial bus rails and 48 V telecom/datacom point-of-load converters. The DPAK (TO-252) package enables compact PCB designs with a small footprint and a tab that doubles as the drain connection for low thermal resistance. Design considerations when using this part include proper gate-drive voltage (10 V typical for full RDS(on) specification), adequate heatsinking or copper-pour area on the tab, and observance of the safe operating area (SOA) under pulse and DC conditions. The PG-TO252-3-11 footprint is industry-standard DPAK, which simplifies sourcing and board layout. This page consolidates distributor pricing, drop-in alternatives, and practical design guidance beyond the manufacturer datasheet to support faster component selection and BOM decisions.
IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon
The Infineon IPD70N10S3L12ATMA1 is an N-channel enhancement-mode OptiMOS-T power MOSFET rated at 100 V VDS, 70 A continuous drain current (Tc), and 125 W power dissipation (Tc), supplied in a 3-pin surface-mount PG-TO252-3-11 (DPAK) package with an industry-standard pinout. It belongs to Infineon's automotive-grade OptiMOS-T family and is qualified to AEC-Q101, supporting MSL1 to 260 °C peak reflow and 175 °C operating junction temperature. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch current at low on-state losses. MOSFETs belong to the broader family of discrete transistors within power semiconductors, sitting at the lowest level of the power-electronics component hierarchy (MOSFET -> discrete transistor -> discrete semiconductor -> power semiconductor). The IPD70N10S3L12ATMA1 uses an N-channel enhancement structure, which requires a positive gate-to-source voltage to turn on the channel and conduct drain current. Key specifications from the Infineon datasheet include a typical on-state resistance RDS(on) of 11.5 mΩ at VGS = 10 V (per the Infineon product page summary), a maximum pulsed drain current of 180 A for avalanche-rated operation, and 100 % avalanche-tested ruggedness. The device is described as a green product (RoHS compliant) and is qualified for the harshest automotive environments, including 48 V inverter and DC-DC converter applications. Its low switching and conduction losses are tuned for high thermal-efficiency designs. The OptiMOS-T cell geometry balances low gate charge (Qg) with low RDS(on), enabling high-frequency switching at reduced driver losses. This makes the IPD70N10S3L12ATMA1 especially attractive for synchronous rectification in switched-mode power supplies (SMPS) and for the high-side/low-side switches in bridge topologies. Its 100 V rating provides comfortable headroom for 48 V automotive rails with inductive transient margin. Typical applications include 48 V automotive inverters, DC-DC converters (buck and boost), motor-drive H-bridges, solenoid drivers, and high-current load switches in industrial automation. The AEC-Q101 qualification makes it drop-in ready for under-hood and chassis electronic control units. The DPAK (PG-TO252-3-11) footprint is the de facto industry standard for through-hole-replacement surface-mount power discretes, so existing DPAK pad layouts can host this part without board rework. When designing with the IPD70N10S3L12ATMA1, observe the maximum junction temperature of 175 °C and ensure the PCB copper area under the drain tab provides sufficient heatsinking for the application's steady-state dissipation. Use a gate-drive voltage of 10 V for full RDS(on) enhancement and add a gate-source resistor of 10 kΩ or more to prevent floating-gate turn-on during system transients. According to Infineon's OptiMOS-T datasheet, the device is 100 % avalanche tested, so unclamped inductive switching is permitted within the rated single-pulse avalanche energy. This page consolidates distributor pricing, parametric drop-in alternatives, and PCB design considerations for the IPD70N10S3L12ATMA1, providing practical information beyond the manufacturer's datasheet for procurement and design engineers.
IPD70N10S3L12ATMA2 - 100V N-Ch OptiMOS 11.5mOhm 70A | Infineon
The Infineon IPD70N10S3L12ATMA2 is an N-channel OptiMOS-T power MOSFET rated at 100 V VDS, 70 A continuous drain current (at TC), and 11.5 mOhm typical R_DS(on) at V_GS = 10 V, housed in a surface-mount PG-TO252-3-11 (DPAK) package. It combines low on-state resistance with the ruggedness expected of Infineon's OptiMOS-T platform, making it well-suited for high-current switching stages where conduction loss dominates. The die is qualified for industrial-grade operation up to 175 C junction temperature per the manufacturer datasheet. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of an n-type epitaxial layer to create a conducting channel between drain and source. The OptiMOS-T family specifically targets low-voltage and mid-voltage synchronous rectification, motor control, and DC-DC converter applications. Within the broader taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. The 11.5 mOhm figure quoted at V_GS = 10 V is typical; gate-drive headroom of 10 V is therefore recommended to realize the lowest conduction loss. Key features include 100 V drain-source breakdown voltage, 70 A continuous drain current at TC, 125 W maximum power dissipation at TC, and a typical R_DS(on) of 11.5 mOhm at V_GS = 10 V. The PG-TO252-3-11 (DPAK) package provides a drain-tab thermal pad that can be soldered directly to a PCB copper pour for low thermal resistance, enabling compact high-current designs without an external heatsink at moderate duty cycles. The device uses Infineon's OptiMOS-T trench technology, which reduces on-state resistance per unit silicon area and improves switching figure-of-merit relative to previous planar generations. The low R_DS(on) x Qg product supports high-frequency switching with reduced gate-drive losses, while the avalanche-rated body diode permits reliable operation in half-bridge and synchronous rectifier topologies with proper dead-time management. Typical applications include 48 V DC-DC converters, high-current synchronous rectification in telecom and server power supplies, motor-drive H-bridges, battery management load switches, and industrial inverters. The combination of 100 V rating and 11.5 mOhm on-state resistance makes the device a particularly efficient choice for 48 V bus architectures where minimizing conduction loss is critical. When designing with this MOSFET, prioritize a low-inductance gate-drive loop and a Kelvin-source connection when available to suppress gate-oscillation and maximize switching speed. The exposed drain tab must be soldered to a copper area of at least 1 square inch for sustained high-current operation, otherwise thermal performance degrades sharply. This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS-T family and key competitors, and practical design notes not consolidated in the manufacturer datasheet.
IPD70P04P4L08ATMA2 - 40V P-Channel OptiMOS MOSFET, 70A | Infineon
The Infineon IPD70P04P4L08ATMA2 is a P-Channel power MOSFET built on Infineon's OptiMOS platform, rated for -40 V VDS and 70 A continuous drain current (Tc) in a 3-pin PG-TO252-3-313 (DPAK) surface-mount package. It features a maximum on-state resistance of 7.8 mΩ at 10 V VGS, 75 W continuous power dissipation (Tc), and a maximum gate-source voltage of ±20 V. The device is optimized for high-side load switching and P-channel high-current paths where low RDS(on) and small footprint are required. A P-Channel MOSFET is a voltage-controlled field-effect transistor in which the channel conducts when the gate is pulled below the source potential. Unlike N-Channel MOSFETs that require a charge pump or bootstrap for high-side drive, P-Channel parts can be driven directly by a low-voltage logic-level signal referenced to system ground - a major simplification for high-side load switches, reverse-battery protection, and OR-ing FETs in redundant power architectures. Within the broader taxonomy, this part sits in the power MOSFET family, which itself belongs to discrete semiconductors used for power conversion and switching. Key specifications include 7.8 mΩ maximum RDS(on) at VGS=10 V, -40 V drain-source breakdown, and a logic-level compatible gate threshold that typically allows full enhancement at -4.5 V VGS. The OptiMOS process technology minimizes gate charge (Qg) and figure-of-merit (FOM = RDS(on) × Qg), reducing switching losses in PWM applications. The 75 W power rating at 25°C case temperature enables sustained high-current operation with appropriate PCB copper area. Typical applications include automotive high-side load switches for ECU power rails, industrial 24 V battery-powered systems, reverse-polarity protection circuits, hot-swap controllers, and motor drive H-bridges. The P-Channel polarity is especially useful when a low-side N-Channel cannot be used due to ground-reference constraints in the upstream driver. When designing with this part, ensure the gate is actively pulled to source during off-state using a pull-up resistor (typically 10 kΩ to VIN) to prevent inadvertent turn-on from drain dv/dt. The PG-TO252-3-313 (DPAK) footprint requires adequate copper pour on the drain tab - at least 1 square inch of 2 oz copper - to keep RDS(on) drift within spec at high currents. Thermal vias under the tab are recommended for continuous 70 A operation. This page synthesizes distributor pricing, parametric drop-in alternatives in the same TO-252 footprint, and practical design notes (gate-drive considerations, thermal management, avalanche ruggedness) that go beyond what the manufacturer datasheet alone provides for sourcing decisions.
IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon
The Infineon IPD70R1K4P7SAUMA1 is a 700V N-channel CoolMOS P7 superjunction power MOSFET rated for 4A continuous drain current at 25C case temperature, housed in a surface-mount PG-TO252-3 (DPAK) package with on-resistance of 1.4 ohm at 25C. It is part of Infineon's 700V CoolMOS P7 family designed for low-power switched-mode power supplies such as mobile-phone chargers, notebook adapters, and auxiliary power supplies. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate structure to modulate current flow between drain and source terminals. Superjunction MOSFETs such as the CoolMOS P7 family use a vertical charge-balance structure that dramatically reduces the on-resistance per unit area compared with conventional planar MOSFETs at high blocking voltages, enabling smaller packages and lower conduction losses for the same RDS(on) rating. Key features of the IPD70R1K4P7SAUMA1 include a 700V drain-source breakdown voltage, 4A continuous drain current at Tc, integrated ESD protection, low gate charge for fast switching, and a 23W continuous power dissipation rating at case temperature. The device also features a body diode suitable for flyback converter operation, low effective output capacitance (Coss) for reduced switching losses, and 100% avalanche-tested ruggedness. The CoolMOS P7 technology combines a fast-switching superjunction structure with a price/performance profile aimed at the sub-100W SMPS market. Compared with the older CoolMOS C6 and P6 families, P7 parts offer improved light-load efficiency, lower gate charge, and reduced EMI due to controlled dv/dt and integrated snubber-like behavior at the source lead. Typical applications include flyback converters in mobile-phone and tablet chargers (5W-45W), auxiliary supplies for white goods and industrial equipment, LED lighting drivers using isolated topologies, and standby power supplies for televisions and computing devices. The 1.4-ohm RDS(on) targets the lower-power end of the 700V superjunction range where conduction loss is acceptable in exchange for lower cost. When designing with this device, ensure that the chosen heatsink or PCB copper area can keep the junction temperature below 150C at the worst-case continuous drain current and ambient temperature. The TO-252 (DPAK) package benefits from a substantial drain-tab copper pour acting as the heatsink. This page synthesizes distributor pricing, drop-in alternatives from Infineon's 700V CoolMOS P7 family, and practical flyback design notes not consolidated on any single distributor product page.
IPD78CN10NGATMA1 - 100V 13A OptiMOS N-Ch MOSFET | Infineon
The Infineon IPD78CN10NGATMA1 is an N-channel power MOSFET rated at 100 V VDS and 13 A continuous drain current (Tc), housed in a surface-mount PG-TO252-3 (DPAK) package with a 78 mOhm maximum on-resistance. It belongs to Infineon's OptiMOS 2 power-transistor family, designed for high-efficiency, high-power-density SMPS applications where low conduction loss and fast switching are required. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals under control of the gate-source voltage. Within the broader taxonomy, the IPD78CN10NGATMA1 sits in the OptiMOS 2 -> N-channel MOSFET -> discrete power transistor -> power semiconductor category. Compared to the next-best alternative technology on the market, the OptiMOS family achieves roughly 30% reduction in both RDS(on) and FOM (figure of merit = RDS(on) x Qg), making it well suited to high-frequency switching and synchronous rectification stages. Key features include a 100 V drain-source breakdown voltage, 13 A continuous drain current at 25 C case temperature, 78 mOhm maximum RDS(on) at 10 V VGS, and 31 W maximum power dissipation. The device supports an operating junction temperature up to 175 C and is qualified per JEDEC standards. Pb-free lead plating and RoHS compliance make it suitable for global designs. The integrated gate-protection ESD profile and avalanche-rated single-pulse capability provide additional margin in inductive switching applications such as motor control and low-side switches. Typical applications include synchronous rectification in 48 V telecom and server bus converters, primary-side switches in telecom bricks, motor drive low-side switches, hot-swap / e-fuse controllers, and DC-DC converter high-side switches in industrial automation. The wide 100 V rating provides ample headroom for 48 V nominal rails and telecom bus systems. When designing with this part, ensure the gate driver delivers at least 10 V VGS to achieve the rated 78 mOhm RDS(on), and place the gate-source resistor close to the device to suppress parasitic ringing. The DPAK tab serves as the drain terminal and must be soldered to a copper pour sized for thermal dissipation up to 31 W. This page synthesizes distributor pricing, same-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon
The Infineon IPD80R1K4P7ATMA1 is an 800V N-channel CoolMOS P7 superjunction power MOSFET housed in a surface-mount PG-TO252-2 (DPAK) package. It is rated for 800V drain-to-source breakdown, 1.4 ohm maximum on-resistance (per the MPN suffix; the base datasheet lists 1.2 ohm typ at 25C), and continuous drain current of 4A at Tc, making it a benchmark part for low-power switched-mode power supplies. An N-channel superjunction MOSFET is a power transistor that uses a vertical charge-balance structure to achieve very low on-resistance per unit area while sustaining very high blocking voltages. Within Infineon's power portfolio it sits in the CoolMOS family, with the P7 generation optimized for low-power SMPS markets including adapter, auxiliary supply, and LED lighting stages. In the broader taxonomy it is a discrete power semiconductor belonging to the MOSFET > Transistor > Semiconductor hierarchy. Key features include industry-leading figure-of-merit (RDS(on)*Eoss), best-in-class switching performance versus prior CoolMOS generations, integrated gate protection, low gate charge Qg, and a low effective output capacitance that reduces switching losses in hard-switched topologies. The optimized body diode supports operation in CCM PFC and continuous flyback duty without external clamp circuitry. The CoolMOS P7 technology uses a deep-trench superjunction process and a refined source/gate architecture. The DPAK package provides a low thermal resistance path (~62 C/W junction-to-ambient on the standard 1 oz copper JEDEC 1s0p board) and a tab that doubles as the drain pin, enabling direct PCB heatsinking. The device is avalanche-rated and RoHS/REACH compliant. Typical applications include flyback converters for notebook adapters and phone chargers, auxiliary supplies in white goods and industrial equipment, LED driver stages, and quasi-resonant / LLC primary-side switches in TVs and set-top boxes. It is particularly well-suited for high-line or universal-input (85-305 VAC) designs that benefit from 800V headroom. When designing with this part, observe the SOA boundaries especially at high VDS and elevated case temperatures; the 800V rating provides substantial margin above the 600V class parts commonly seen at 230 VAC peak. A standard TO-252 footprint with copper-pour heatsink will deliver rated performance at 4A continuous. This page synthesizes distributor pricing, drop-in same-package alternatives, comparison parameters, and design guidance that complement (but do not replace) the manufacturer's datasheet. Specifications below are sourced from the Infineon IPD80R1K4P7 datasheet and live distributor listings as of 2026-09-13.