IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252
N.º de pieza: IPD70N10S312ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.31 | $131,00 |
| 500 | $1.08 | $540,00 |
| 1.000 | $0.92 | $920,00 |
IPD70N10S312ATMA1 Descripción general
An N-channel power MOSFET is a voltage-controlled majority-carrier switch that conducts current between drain and source when a sufficient positive gate-source voltage (VGS) is applied above its threshold. The OptiMOS-T family in particular is a trench-technology power-MOSFET line optimized for low on-state resistance per unit area (low RDS(on)) and high switching speed, sitting in the broader hierarchy: power MOSFET -> discrete semiconductor -> semiconductor -> electronic component. These devices are the workhorse switches in DC-DC converters, motor drivers, and automotive load-control subsystems.
Key differentiating specifications include an ultra-low RDS(on) of 11.1 mΩ at 70 A / 10 V VGS, a +/-20 V gate-source rating, 4355 pF input capacitance (Ciss) at 25 V, and 65 nC total gate charge (Qg) at 10 V. These translate into low conduction and switching losses, which means higher efficiency and easier thermal design even at the part's 70 A continuous rating. The DPAK (PG-TO252-3-11) footprint is a long-established industry-standard SMD outline with a large metal tab that doubles as the drain terminal and provides a low thermal-resistance path (theta_JC) to a PCB copper heatsink.
Architecturally, OptiMOS-T uses Infineon's deep-trench cell process with an optimized stripe geometry to maximize channel width per silicon area, yielding the low 11.1 mΩ figure. The part is 100 % avalanche-rated, which means the datasheet's single-pulse avalanche energy (EAS) is guaranteed on every unit - a critical reliability parameter for unclamped inductive switching in automotive and industrial environments.
Typical applications include 12 V and 24 V automotive ECUs (electric power steering, braking, transmission), high-current DC-DC converter switching stages, motor-drive H-bridges (half-bridge and low-side switch roles), and industrial solenoid/relay drivers. The 100 V VDS rating gives significant headroom for 24 V bus transients and inductive load recirculation.
Design consideration: although the 11.1 mΩ RDS(on) is low, the DPAK package must be soldered to at least 1 square inch of copper pour on the PCB to keep the junction below 175 °C at full load - a smaller pad risks thermal runaway at high continuous current. Gate drive should be 10 V standard (logic-level not supported) with a series gate resistor in the 10-100 Ω range to damp ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas directas para IPD70N10S312ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPD70N10S312ATMA1 (mismo factor de forma y huella) — difiere en Package, MSL Level, Technology, Product Family, Continuous Drain Current (ID, Tc).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IPD082N10N3GATMA1
✅ Sustitución directa✓ En stock
$1.14 / unidad
Ver hoja de datos →IPD70N10S3-12
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPD110N12N3GATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSZ096N10LS5ATMA1
✅ Sustitución directa✓ En stock
$0.94 / unidad
Ver hoja de datos →BSZ0901NSATMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IPD90N06S407ATMA2
✅ Sustitución directa✓ En stock
$0.84 / unidad
Ver hoja de datos →IPD70N10S312ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IPD70N10S312ATMA1 |
| Product Family | OptiMOS-T Power-Transistor |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A |
| Pulsed Drain Current (IDM) | 180 A |
| Power Dissipation (PD, Tc) | 125 W |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 4355 pF @ 25 V |
| Total Gate Charge (Qg) | 65 nC @ 10 V |
| Operating Temperature (TJ) | -55 °C to +175 °C |
| Encapsulado | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Tipo de montaje | Surface Mount |
| Nivel MSL | MSL1 (up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Tested | 100 % (per datasheet) |
| RoHS Compliance | Green product, RoHS compliant |
Configuración de pines de IPD70N10S312ATMA1
| Pin 1 | Gate (G) — Gate drive input; apply 10 V for full enhancement, never exceed +/-20 V VGS |
| Pin 2 | Source (S) — Source terminal; connect to circuit return / GND for low-side switch configuration |
| Pin 3 | Source (S) — Source terminal (electrically common with pin 2); PCB layout flexibility |
| Pin Tab | Drain (D) — Drain terminal; also primary thermal path - solder to PCB copper pour |
Área de funcionamiento seguro (SOA) - IPD70N10S312ATMA1
Aplicaciones típicas
IPD70N10S312ATMA1 es adecuado para 7 aplicacións: 12 V / 24 V Automotive ECU Load Switching, DC-DC Converter Switching Stage, Motor-Drive H-Bridge Half-Bridge Switch, Industrial Solenoid / Relay Driver, Hot-Swap / Inrush-Current Limiter, Battery-Protection Disconnect Switch, LED Headlight Driver Switch.
12 V / 24 V Automotive ECU Load Switching
The IPD70N10S312ATMA1's 100 V VDS rating provides substantial headroom above 24 V automotive bus voltages, where load-dump transients can reach 35-40 V. The device's 70 A continuous drain current at Tc and 180 A pulsed rating suit high-current solenoid and relay drivers inside ECUs - electric power steering (EPS), electronic stability control (ESC), and transmission solenoids. Its 11.1 mΩ RDS(on) at 10 V VGS minimises conduction loss in always-on paths, reducing fuel consumption in parasitic-load-sensitive subsystems. AEC-Q101 qualification and 175 °C max junction temperature confirm under-hood reliability.
Recomendado
DC-DC Converter Switching Stage
In a 12 V-to-3.3 V buck converter or 24 V-to-12 V intermediate bus, the IPD70N10S312ATMA1 serves as the main switching element. Its 11.1 mΩ RDS(on) keeps conduction loss under 1 W at typical 30 A load currents, while the 65 nC total gate charge keeps gate-drive loss modest at 100-200 kHz switching frequencies. The 100 V VDS rating provides ample margin for ringing on the switch-node of a 24 V input buck converter. Compared to a discrete IGBT, this MOSFET offers much faster switching (sub-50 ns) and no tail current, enabling higher-frequency operation and smaller magnetic components.
Recomendado
Motor-Drive H-Bridge Half-Bridge Switch
In an H-bridge motor drive, two IPD70N10S312ATMA1 MOSFETs form each half-bridge leg, switching the motor phase between supply and ground at 20-50 kHz PWM. The 70 A continuous current supports small DC and BLDC motors in pumps, fans, and seat adjusters, while the 180 A pulsed rating handles motor-startup inrush currents. The 100 V VDS gives comfortable margin above the typical 12 V or 24 V motor supply rail. The AEC-Q101 grade and 175 °C junction rating ensure long-term reliability under the thermal-cycling stresses typical of motor-drive duty.
Recomendado
Industrial Solenoid / Relay Driver
Industrial solenoid valves, hydraulic relays, and pneumatic actuators require a low-side switch capable of handling 30-50 A inductive load currents. The IPD70N10S312ATMA1's 11.1 mΩ RDS(on) keeps dissipation below 30 W at 50 A, manageable in the DPAK footprint with appropriate PCB copper. The 100 % avalanche-tested rating is essential for unclamped inductive turn-off events where the solenoid's stored energy recirculates into the MOSFET body diode. The ±20 V VGS rating tolerates large gate-drive transients from long industrial wiring harnesses.
Recomendado
Hot-Swap / Inrush-Current Limiter
In 12 V or 24 V hot-swap controller circuits, the IPD70N10S312ATMA1 acts as the inrush-limiting element when a board is plugged into a live backplane. Its 11.1 mΩ RDS(on) combined with a small sense resistor and gate-dvdt capacitor produces a controlled turn-on ramp. The 70 A continuous rating covers most board-level load currents, while the 100 V VDS rating is conservative for 24 V telecom/datacom rails. The OptiMOS-T linear-mode capability below 5 V VGS allows analog current-limit loops for second-stage protection.
Recomendado
Battery-Protection Disconnect Switch
In 12 V lead-acid or 48 V mild-hybrid battery packs, the IPD70N10S312ATMA1 serves as the master disconnect switch. Its 70 A continuous rating handles typical 30-50 A continuous loads (lighting, ignition, infotainment) while the 180 A pulsed rating accommodates cold-crank surge. The 100 V VDS provides margin above 48 V mild-hybrid rails with inductive transients. The 11.1 mΩ RDS(on) minimises parasitic loss in the always-on path. AEC-Q101 qualification is mandatory for automotive battery-pack applications under ISO 26262 functional-safety standards.
Recomendado
LED Headlight Driver Switch
In matrix-LED and high-beam automotive headlight driver stages, the IPD70N10S312ATMA1 functions as the buck-converter main switch or high-side LED-current regulator element. The 100 V VDS rating handles the 48 V bus used in newer LED-driver architectures, while the 70 A continuous rating supports multi-string LED arrays drawing 20-40 A total. The 11.1 mΩ RDS(on) keeps conduction loss low in continuous-PWM current-mode regulation, reducing thermal stress in the cramped headlight housing. AEC-Q101 qualification is essential for under-hood thermal-cycling endurance.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPD70N10S312ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPD082N10N3GATMA1 | IPD70N10S3-12 | IPD110N12N3GATMA1 | BSZ096N10LS5ATMA1 | IPD90N06S407ATMA2 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 120 V | 100 V | 60 V |
| Automotive Qualification (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| MSL Rating | MSL1 | MSL1 | MSL1 | MSL1 | MSL1 | MSL1 |
| Operating Temperature (TJ max) | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
Diferenciadores clave
- Established OptiMOS-T platform with 100 % avalanche testing (frente a IPD082N10N3GATMA1)
- 100 V VDS provides significant headroom for 24 V bus transients (frente a IPD90N06S407ATMA2)
- Drop-in compatible with the same-generation base part IPD70N10S3-12 (frente a IPD70N10S3-12)
Notas de diseño
Estimated: at VGS=10 V and ID=30 A continuous (typical ECU load), the IPD70N10S312ATMA1 dissipates roughly P = ID² × RDS(on) = 30² × 0.0111 = 10 W. With DPAK mounted on 1 square inch of 2 oz copper (theta_JA ≈ 35 °C/W), the junction will rise 350 °C above ambient - exceeding the 175 °C rating. Required: minimum 1.5 square inches of 2 oz copper, or 0.5 square inches with forced-air cooling, or derate continuous current to 20 A at 25 °C ambient. For sustained high-current (>40 A) applications, parallel two devices or migrate to TO-220 / TO-247 packages.
Use the DPAK metal tab as the primary thermal path: in the PCB footprint, allocate at least 35 mm × 35 mm of copper (2 oz) directly under the tab, with thermal vias (0.3 mm diameter, 1 mm pitch) connecting to an inner-plane copper pour. The DPAK pin-1 (gate) trace must be kept short and routed away from the drain tab to minimise parasitic gate-drain capacitance coupling, which can cause Miller-induced false turn-on in half-bridge layouts. Place a 100 kΩ pull-down resistor between gate and source on the PCB to ensure the MOSFET stays off during controller reset.
Do not drive the gate above ±20 V - the IPD70N10S312ATMA1 datasheet specifies this absolute maximum. Standard gate-drive of 10 V is recommended; never use logic-level (5 V) drive, as the device will not fully enhance and RDS(on) will rise 3-5×, causing thermal runaway. In half-bridge layouts, add a 10-100 Ω gate-source resistor (in addition to the series gate resistor) to damp parasitic LC ringing and prevent shoot-through. Always check avalanche energy (EAS) budget when switching unclamped inductive loads - the datasheet single-pulse EAS figure must exceed 0.5 × L × I² × 10⁻⁶ J of the load.
Route the high-current drain loop (drain tab → load → source pin → back to source) with the smallest possible loop area. In buck-converter layouts, keep the high-side MOSFET drain loop and low-side MOSFET drain loop physically separated to avoid circulating common-mode noise. Place the gate-driver IC within 5 mm of the MOSFET gate pin to minimise parasitic inductance in the gate-drive loop, which can cause excessive ringing and EMI. Use a 4-layer PCB with a continuous ground plane directly under the MOSFET for best thermal and EMI performance.
Información de cumplimiento
AEC-Q101 automotive qualified (not AEC-Q100 - Q101 is for discrete semiconductors). MSL1 to 260 °C peak reflow. 175 °C max junction. Green product (RoHS compliant) per Infineon product description.
