MOSFETs
Productos (1294)
IRF7105PBF - 25V Dual N/P HEXFET MOSFET 3.5A/2.3A SO-8 | Infineon
The Infineon IRF7105PBF is a dual N-channel and P-channel HEXFET power MOSFET array housed in an 8-pin SO-8 surface-mount package. The N-channel section is rated at 25V VDS and 3.5A continuous drain current, while the P-channel section is rated at 25V VDS and 2.3A continuous drain current. Total package power dissipation is 2W, and the part is qualified to MSL1 / industrial reliability standards. What is a HEXFET MOSFET array? A HEXFET (hexagonal cell) power MOSFET is a power MOSFET built using Infineon's (formerly International Rectifier) proprietary hexagonal-cell vertical DMOS process, which minimizes on-resistance per unit silicon area. A dual N/P array combines an N-channel and a P-channel die in one package, giving the designer a complementary half-bridge or synchronous-rectifier switch on a single SO-8 footprint, eliminating the need to place two separate MOSFETs. Key features include ultra-low on-resistance per silicon area, dynamic dv/dt rating, fast switching, fifth-generation advanced process technology, dual N- and P-channel integration, surface-mount SO-8 with customized leadframe for enhanced thermal characteristics, RoHS compliance, halogen-free construction, and lead-free terminations. The SO-8 leadframe supports vapor-phase, infrared, and wave soldering. Technically, the IRF7105PBF uses a customized SO-8 leadframe that enables multi-die mounting with reduced thermal resistance compared to a standard SO-8. The P-channel die uses polarity complementary to the N-channel die so the two switches can be wired as a synchronous half-bridge. The device is designed for low-voltage DC-DC conversion where complementary high-side/low-side switching is required on a compact PCB. Typical applications include DC-DC converters, load switching in notebook computers, battery management, motor control driver stages, and Class-D audio amplifier output stages. The dual-polarity topology is especially useful in synchronous buck regulators and OR-ing FET circuits. When designing with the IRF7105PBF, pay attention to the SO-8 thermal resistance - 2W total dissipation requires adequate copper pour on both top and inner PCB layers. Both drains share the package thermal pad, so the maximum continuous current must be derated when both FETs are conducting simultaneously. This page synthesizes distributor pricing, drop-in alternatives from the IRF7105 family, and practical thermal design notes not collected in any single datasheet document, giving engineers a single source for parametric comparison and PCB-level replacement decisions.
IRF7105TRPBF - Dual N+P HEXFET MOSFET, 25V, 8-SO | Infineon
The Infineon IRF7105TRPBF is a dual-channel HEXFET power MOSFET integrating one N-channel and one P-channel transistor in a single 8-pin SOIC (8-SO) surface-mount package. The N-channel section is rated at 25V Vds and 3.5A continuous drain current, while the P-channel section supports 25V Vds and 2.3A continuous drain current, with a combined package power dissipation of 2W. Built on Infineon's fifth-generation HEXFET process, the device targets the lowest possible on-resistance per silicon area while preserving fast switching speed and ruggedness. Tape-and-reel packaging (TRPBF suffix) indicates Pb-free terminations and high-volume assembly suitability. A dual MOSFET in a single SO-8 package combines one N-channel and one P-channel device on a common die, enabling compact half-bridge, load-switching, and synchronous-rectification topologies with a single IC footprint. Compared with discrete alternatives, the dual SO-8 MOSFET reduces board area, gate-drive trace lengths, and parasitic inductance between the two switches. The HEXFET process is a planar vertical DMOS technology optimized for low Rds(on), high peak current handling, and avalanche-energy ruggedness. The IRF7105TRPBF belongs to the family of small-signal HEXFET dual MOSFETs that include IRF7103, IRF7305, IRF7314, and IRF7380, all sharing the SO-8 pinout and serving as building blocks for low-voltage DC-DC conversion. Key features include a maximum on-resistance of 100 mOhm (per the Infineon product page for the IRF7105 family), a typical gate threshold voltage compatible with 3.3V and 5V logic-level drive, low gate charge for fast switching transitions, and an SO-8 footprint compatible with standard IRF7103/IRF7305/IRF7314 land patterns. The P-channel half enables high-side switching without a charge pump, simplifying gate drive. The ruggedized HEXFET die supports repetitive avalanche operation, important for motor-drive and inductive-load applications. Typical applications include battery protection circuits in portable Li-ion packs, low-voltage DC-DC buck and synchronous-rectification converters, motor and solenoid drivers in small appliances, USB load switches and power muxing, and audio amplifier output stages. The wide logic-level gate drive compatibility makes the IRF7105TRPBF especially well suited for direct microcontroller I/O drive. When designing with the IRF7105TRPBF, ensure that gate-drive rise times stay below the SO-8 thermal budget. For switching frequencies above 200 kHz, switching losses dominate and the 2W package rating must be derated against the application's duty cycle. Layout should minimize the high-current loop between the two MOSFET halves. This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IRF7205PBF - -30V P-Channel HEXFET MOSFET, 4.6A, SO-8 | Infineon
The Infineon IRF7205PBF is a fourth-generation HEXFET P-channel power MOSFET rated for -30V VDS and continuous drain current up to -4.6A, housed in an industry-standard 8-pin SO-8 surface-mount package. It utilizes advanced processing techniques to achieve an extremely low on-resistance per silicon area, with a maximum RDS(on) of 70 mOhm at VGS = -10V, making it well suited for high-efficiency load switching and low-side reverse-battery protection. A P-channel MOSFET is a voltage-controlled device in which the conducting channel is formed by p-type dopants between the source and drain. Because the channel turns on when the gate is pulled below the source potential, P-channel devices simplify high-side switching by eliminating the need for a boosted gate-drive supply. P-channel MOSFETs sit within the broader transistor family (P-MOSFET -> MOSFET -> discrete semiconductor -> power management) and are commonly used as load switches, battery isolation switches, and level shifters in portable, automotive, and industrial systems. Key specifications of the IRF7205PBF include a gate threshold voltage typically around -1V to -3V, low gate charge for fast switching, and a planar cell structure that provides a wide safe operating area (SOA). The device is JEDEC-qualified and silicon-optimized for switching frequencies below 100 kHz, which covers most DC-DC converter and power-ORing applications. The ruggedized device design tolerates inductive switching transients, and the SO-8 footprint is one of the most widely adopted surface-mount power packages. Typical applications include high-side load switching in notebook computers, USB power distribution, battery management systems, motor drive half-bridges (as the high-side switch), and hot-swap controllers. The -30V rating provides comfortable margin for 12V automotive rails and 19V laptop adapters, while the low on-resistance minimizes conduction loss. When designing with this part, observe the SOA curve from the manufacturer datasheet and ensure that the maximum junction temperature of 150C is not exceeded under worst-case load and ambient conditions. Because P-channel turn-on requires VGS below ground, pay attention to gate-drive headroom, particularly in low-voltage systems below 5V. A gate resistor of 10-100 ohm is typically recommended to control ringing and EMI.
IRF7205TRPBF - P-Ch -30V -4.6A 70mΩ SO-8 MOSFET | Infineon
The Infineon IRF7205TRPBF is a P-channel power MOSFET built on the company's fourth-generation HEXFET process, rated for -30 V drain-source voltage, -4.6 A continuous drain current (at TA = 25 °C), and 70 mΩ maximum on-resistance, all delivered in the industry-standard 8-pin SO-8 surface-mount package. The suffix "TRPBF" denotes a tape-and-reel packaging variant with lead-free (Pb-free) plating. As a P-channel device, the IRF7205TRPBF is commonly used for high-side load switching where a single low-side gate-drive signal is preferred over an N-channel bootstrap configuration. A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switching device that regulates power flow between drain and source terminals via an insulated gate. The IRF7205TRPBF belongs to the P-channel enhancement-mode sub-family, meaning the device is normally OFF at VGS = 0 and turns ON when a sufficiently negative gate-source voltage is applied (typically -10 V for full enhancement). Within the broader taxonomy, this part sits in: power MOSFET -> enhancement-mode P-channel MOSFET -> HEXFET -> surface-mount discrete semiconductor. Key differentiating features include an advanced IR MOSFET process technology, ultra-low on-resistance per silicon area, dynamic dv/dt rating, fast switching capability, lead-free plating, and an ultra-low threshold-gate charge of 27 nC (Qg) that minimizes driver losses. The 8-SO (SOIC-8) package provides a low thermal resistance path with copper-pad heatsinking on the PCB. The fourth-generation HEXFET cell structure uses a vertical DMOS architecture with a deep-body source short and a refined trench-style gate that achieves the lowest on-resistance per unit silicon area in the -30 V P-channel class. The 27 nC Qg specification enables switching frequencies well above 1 MHz when driven by a standard CMOS gate driver. Typical applications include high-side load switches, DC-DC synchronous-rectifier replacements, battery protection and reverse-polarity blocking in portable equipment, and motor-drive half-bridges in industrial automation. The -30 V rating suits 12 V automotive rails and 24 V industrial supply systems with adequate transient margin. A critical design consideration is that the SO-8 package has limited continuous current capacity above approximately 2 A without substantial copper-pad heatsinking; for 4.6 A operation, the PCB pad must be designed as a thermal land with thermal vias to inner-plane copper. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
IRF7306TRPBF - Dual P-Ch -30V 3.6A HEXFET MOSFET | Infineon
The Infineon IRF7306TRPBF is a dual P-channel power MOSFET built on the company's fifth-generation HEXFET technology, integrating two P-channel devices in a single 8-pin SOIC surface-mount package. It is rated for -30V drain-to-source voltage and -3.6A continuous drain current, with a maximum power dissipation of 2W at 25°C and an on-resistance of approximately 100 milliohms maximum at -10V gate drive. The -30V rating and 100 mOhm RDS(on) make it well suited to low-voltage load switching, battery protection, and small motor control in portable and consumer equipment. A P-channel power MOSFET is a type of field-effect transistor whose majority carriers are holes rather than electrons. This makes it naturally suited to high-side switching in low-voltage systems, because a P-channel device can be turned on by pulling its gate toward ground relative to the source, eliminating the need for a charge pump or bootstrap circuit that an N-channel device requires at the high side. P-channel MOSFETs occupy a specific place in the broader taxonomy of discrete semiconductors: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor -> semiconductor device. Within Infineon's portfolio, this part belongs to the HEXFET Power MOSFET family aimed at consumer-market qualification standards. The IRF7306TRPBF integrates two matched P-channel transistors, which simplifies PCB layout by halving the number of discrete switches needed for complementary or synchronous tasks such as full H-bridge drivers, USB power switches, and Li-ion battery pack protection. Its low on-resistance per silicon area, combined with fast switching speed and ruggedized avalanche-rated die, makes it efficient for use as a low-side reverse-battery blocker or load disconnect switch. The 8-SO footprint allows drop-in compatibility with many competing dual P-channel SO-8 parts, supporting board-level second sourcing. A logic-level-compatible gate threshold further enables direct drive from 3.3V or 5V microcontrollers without dedicated gate-driver ICs. The part is supplied in tape-and-reel packaging for high-volume SMT assembly lines. Typical applications include load switching in portable and battery-powered equipment, USB power-distribution switches, DC motor direction control in low-voltage H-bridges, Li-ion battery protection circuits, and general-purpose power management in consumer and industrial designs. The dual configuration is particularly attractive for space-constrained boards where two independent switches are needed and PCB area is at a premium. When designing with this part, pay close attention to gate-drive levels: at -10V VGS the device achieves its specified 100 mOhm RDS(on), but at lower gate drive the on-resistance rises significantly and conduction losses increase. Ensure that the SO-8 thermal pad is soldered to an adequate copper pour; with 2W rating in SO-8, thermal derating begins well below 1A continuous current unless board cooling is provided. This page synthesizes distributor stock, parametric pricing, drop-in alternatives, and practical board-level design notes not always presented together on manufacturer or distributor product pages.
IRF7309TRPBF - Dual N/P MOSFET Array 30V 4A/3A SO-8 | Infineon
The Infineon IRF7309TRPBF is a dual N+P-channel MOSFET array housed in an 8-pin SO-8 (SOIC-8) surface-mount package, integrating one N-channel and one P-channel HEXFET Power MOSFET on a single die substrate. Each device is rated for 30V VDS with continuous drain currents of 4A (N-channel) and 3A (P-channel), and a maximum power dissipation of 1.4W at TA=25°C. The TRPBF suffix indicates Lead-free, Tape-and-Reel packaging per Infineon's lead-free (Pb-free) mandate. A dual MOSFET array (also called a MOSFET pair or co-pack) is a discrete semiconductor that places two MOSFETs in one package, sharing the same substrate and thermal pad. This packaging style reduces PCB footprint, simplifies layout for half-bridge or complementary switching topologies, and provides matched thermal characteristics between the two channels. MOSFET arrays belong to the broader family of discrete semiconductors (FETs/transistors) within power management and signal switching. Key features of the IRF7309TRPBF include a maximum on-resistance of 50 mΩ (N-channel) per the Infineon family datasheet, low gate charge for fast switching, and the ruggedized HEXFET Generation V process technology. The integrated P-channel eliminates the need for a charge pump in low-side switching applications, while the N-channel side serves as the synchronous or main switch. This combination is engineered for use in DC-DC converters, motor drivers, and load switches in space-constrained designs. The HEXFET Generation V process delivers an extremely low on-resistance per silicon area, providing both fast switching speed and ruggedized device operation. The part is rated for surface-mount reflow soldering up to 260°C peak per JEDEC J-STD-020 and is qualified to MSL-1 for unlimited floor-life. Typical applications for the IRF7309TRPBF include DC-DC buck/boost converters, half-bridge motor drivers, battery protection circuits, and high-side/low-side load switches in portable electronics and industrial control modules. The complementary N/P architecture also makes it a natural fit for full-bridge or push-pull topologies in audio amplifiers and Class-D drivers. When designing with this part, observe the SO-8 thermal pad layout guidelines from Infineon's SO-8 Power MOSFET application note. The combined dissipation of both MOSFETs sharing one thermal pad requires careful copper-pour sizing to keep junction temperature below 150°C under worst-case load. This page synthesizes distributor pricing, drop-in alternative identification, and practical design notes that are not consolidated in the Infineon datasheet, providing engineers with an actionable engineering reference.
IRF7313TRPBF - Dual N-Channel 30V 6.5A MOSFET SO-8 | Infineon
The Infineon IRF7313TRPBF is a dual N-channel power MOSFET array rated at 30V VDS, 6.5A continuous drain current, and 29 mOhm maximum on-resistance per channel, housed in a surface-mount 8-pin SOIC (SO-8) package with 2W power dissipation. Marketed under International Rectifier's IR MOSFET Generation V (HEXFET Fifth Generation) technology, the device integrates two independent N-channel enhancement-mode MOSFETs in a single SO-8 outline for compact half-bridge and synchronous-rectifier topologies. A dual N-channel MOSFET array belongs to the discrete MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, which sits within the broader power semiconductor taxonomy (MOSFET -> power transistor -> discrete semiconductor). It is widely used as a building block for synchronous switching, load switching, and small motor control where space is at a premium. Generation V (Gen V) IR MOSFETs use advanced trench process technology to deliver lower RDS(on) per unit silicon area than legacy planar devices. Key features include a low on-resistance of 29 mOhm maximum at VGS=10V, a logic-level gate drive compatibility threshold (VGS(th) in the 1V-2.5V range), fully avalanche-rated silicon, and a dual-die common-source connection. The SO-8 package exposes the drain tab for both MOSFETs via the standard 8-pin land pattern, providing excellent thermal coupling to PCB copper. The Pbf suffix indicates lead-free, RoHS-compliant termination plating. The IRF7313TRPBF's Generation V process technology achieves lower gate charge (Qg) and reduced Miller plateau voltage compared to its predecessors, which reduces switching losses at high frequencies. This makes the part well suited to DC-DC converter synchronous rectifiers on the low-side switch position and small brushless DC (BLDC) motor half-bridges up to a few hundred kHz. The avalanche rating gives designers headroom against inductive kickback in motor and solenoid applications. Typical applications include DC-DC buck converters in notebook and server power rails, battery protection and load switching in portable equipment, low-voltage synchronous rectifiers on the secondary side of isolated power supplies, and small motor drivers for fans, pumps, and toys. Its SO-8 footprint and 30V rating align with 12V and 19V bus architectures commonly used in computing and telecom systems. When designing with the IRF7313TRPBF, ensure the gate drive swing reaches at least 4.5V at the gate pin for full enhancement and minimum RDS(on). Use wide PCB copper pours on pins 5/6/7/8 (drain tabs) to keep junction temperature within the 150C maximum rating. Place a gate-source resistor of 10k to 100k ohms on each gate to prevent unwanted turn-on from dv/dt coupling. This page synthesizes current distributor pricing, parametric drop-in alternatives, and practical PCB design notes beyond what is shown in the manufacturer's datasheet. All specifications are extracted from the official Infineon IRF7313 datasheet and verified against DigiKey and Mouser listings as of 2026-09-10.
IRF7319TRPBF - 30V Dual N/P-Channel MOSFET, 6.5A | Infineon
The Infineon IRF7319TRPBF is a 30V dual N- and P-channel HEXFET power MOSFET array housed in a surface-mount SO-8 (SOIC-8) package. It integrates a complementary N-channel and P-channel MOSFET pair on a single die, with the N-channel rated at 6.5A continuous drain current and the P-channel rated at 4.9A, both supporting up to 30V drain-to-source breakdown. The N-channel max RDS(on) is approximately 29 mOhm (per Infineon's official product page listing 29 mOhm max RDS(on)), while overall array power dissipation is rated at 2W under standard PCB-mount conditions. A dual MOSFET array (also called a half-bridge or complementary pair in a single package) combines two MOSFET die in one outline so the designer can build synchronous-rectification, level shifting, load switching, or H-bridge stages without placing two discretes. The IRF7319 belongs to the N+P-channel MOSFET family within Infineon's IR MOSFET technology portfolio, with broader taxonomy: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor device. The P-channel device inside allows direct high-side drive from a low-voltage control signal without an extra charge pump, simplifying circuits where a simple on/off load switch is needed. Key features include the Infineon/IR fifth-generation HEXFET process, which achieves extremely low on-resistance per silicon area for the N-channel, as well as low gate charge and fast switching. The SO-8 package offers industry-standard pinout for dual MOSFET arrays (pin 1/2/3 = N-source/gate/drain, pin 4 = N-drain, pin 5/6/7/8 = P-drain/gate/source/source) and a thermal resistance of approximately 120 C/W on the N-channel and 110 C/W on the P-channel under steady-state conditions on a standard JEDEC test board. Typical applications include DC-DC converter synchronous rectification, high-side load switching, motor drive H-bridges, battery protection circuits, and USB power switches. The complementary pair simplifies PCB layout and reduces parasitic inductance between the two switches, which improves efficiency in switching converters operating in the 100 kHz to 1 MHz range. When designing with this part, verify that the steady-state power dissipation in each channel stays within the SO-8 thermal envelope (typically 1.5-2W per channel on a 1 sq-in copper pad) and ensure the gate drive voltage on the P-channel is sufficiently negative relative to its source to fully enhance the device. The TR suffix indicates Tape & Reel packaging, and PBF indicates lead-free (Pb-free) terminations. This page synthesizes distributor pricing, drop-in SO-8 alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone.
IRF7341GTRPBF - 55V Dual N-Channel MOSFET 5.1A SO-8 | Infineon
The Infineon IRF7341GTRPBF is a dual N-channel HEXFET power MOSFET array rated at 55V drain-source voltage and 5.1A continuous drain current, housed in a surface-mount 8-SO (SOIC-8) package. Key parameters include a maximum on-resistance of 50 mOhm at VGS=10V, 2.4W power dissipation, and 175°C maximum junction operating temperature. The part ships in tape-and-reel packaging per the GTR suffix. A dual MOSFET array is a single package containing two electrically independent MOSFET die that share only the physical substrate and thermal pad. This arrangement belongs to the broader category of discrete semiconductors, specifically power MOSFETs, which sit within the semiconductor hierarchy alongside IGBTs, BJTs, and JFETs. Dual MOSFETs are commonly used in synchronous buck converters, half-bridge stages, motor drivers, and load-switch applications where two switches must be tightly co-packaged for layout symmetry and thermal coupling. The IRF7341GTRPBF utilizes Infineon's planar IR MOSFET process technology with a 175°C junction rating, enabling higher safe operating area than standard 150°C parts. Its low on-resistance per silicon area reduces conduction losses in continuous-current paths, while the SO-8 footprint exposes a thermal pad that allows PCB copper pour to act as a heatsink. Typical applications include DC-DC buck and boost converter high-side and low-side switches, motor drive H-bridges, battery protection circuits, and power OR-ing. The dual-die arrangement makes it particularly suited to synchronous rectification where the high-side and low-side FETs must share thermal mass. When designing with this part, ensure that the SO-8 exposed pad is soldered to a copper pour of at least 1 square inch to keep junction temperature within safe limits. Switching losses dominate at high frequency, so gate-drive resistance and dead-time selection are critical to prevent shoot-through. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluation.
IRF7342PBF - 55V Dual P-Channel HEXFET MOSFET, 3.4A, SO-8 | Infineon
The Infineon IRF7342PBF is a dual P-channel HEXFET power MOSFET in an 8-pin SO-8 surface-mount package, rated at -55V V(DSS), 3.4A continuous drain current, and 0.105 ohm maximum on-resistance per channel. It is part of Infineon's Fifth Generation HEXFET family, utilizing advanced processing techniques to deliver extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design for high-efficiency power conversion. The dual-die configuration in SO-8 enables full-bridge, half-bridge, and synchronous-rectifier topologies from a single small-footprint package, with each die independently wired to its own source, gate, and drain pins. A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals in power-conversion circuits. P-channel variants conduct when the gate is pulled below the source, making them well-suited to high-side switching in systems powered from a positive rail because they can be driven by a low-voltage logic signal without requiring a bootstrap or charge-pump supply. As a P-channel MOSFET in a dual SO-8 package, the IRF7342PBF belongs to the discrete-semiconductor hierarchy: MOSFET -> P-channel MOSFET -> power MOSFET -> power switching transistor -> semiconductor. Key features include a planar cell structure for wide safe operating area (SOA), silicon optimized for switching below 100 kHz, dynamic dv/dt rating, and 2W maximum power dissipation. The customized SO-8 lead frame provides enhanced thermal characteristics and multiple-die capability, and the package supports vapor-phase, infrared, and wave soldering. Industry-standard SO-8 pinout makes the IRF7342PBF drop-in compatible with countless other dual P-channel SO-8 MOSFETs, simplifying PCB layout reuse. Typical applications include load switching, DC-DC conversion (synchronous rectification and buck/boost stages), battery management systems, motor control H-bridges, power-OR-ing circuits, and high-side switches in industrial, computing, and telecom power rails. The wide SOA allows use in linear-region load-dump protection circuits where other MOSFETs would fail thermally. When designing with this device, ensure that Vgs(th) thresholds and gate-drive strength match the upstream controller, and place the gate-drive resistor close to the gate pin to limit parasitic ringing at turn-off. Add adequate copper pour under the exposed pad region to keep junction temperature within ratings at full load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRF7342TRPBF - 55V Dual P-Channel HEXFET MOSFET Array | Infineon
The Infineon IRF7342TRPBF is a dual P-channel HEXFET power MOSFET array rated at -55V Vds and -3.4A continuous drain current per channel, integrated into a single 8-pin SOIC (SO-8) surface-mount package with a maximum power dissipation of 2W. It uses Fifth Generation HEXFET processing to achieve extremely low on-resistance per silicon area while preserving fast switching speed and the ruggedness HEXFET devices are known for, giving designers an efficient and reliable dual switch in a compact footprint. Key specifications include a drain-to-source on-resistance (RDS(on)) of approximately 0.105 ohm at VGS=-10V, a gate threshold voltage around -1V to -3V, and a continuous drain current of -3.4A at 25C. The device is rated for avalanche operation, features an intrinsic body diode, and supports logic-level gate drive at -10V VGS. Its SO-8 package footprint is industry standard for dual MOSFET arrays, enabling direct footprint compatibility with many competing -55V dual P-channel MOSFETs. As a P-channel MOSFET array, the IRF7342TRPBF belongs to the field-effect transistor (FET) family, which is a subclass of discrete power semiconductors. Within power management topologies, dual P-channel arrays are commonly used as high-side switches or load switches on the low side of the positive rail, paired with complementary N-channel or P-channel drivers in synchronous and half-bridge applications. Typical applications include battery management load switching in portable electronics, full-bridge and half-bridge motor driver outputs, DC-DC converter high-side switches, power-rail OR-ing circuits, and USB power switching. The -55V rating provides substantial headroom for 12V and 24V bus protection, while the 3.4A continuous current rating handles moderate-load switching in industrial and consumer products. When designing with this part, note that P-channel high-side switching simplifies the gate drive (no bootstrap or charge pump required) at the cost of RDS(on) versus an equivalent N-channel, so thermal performance at full load should be verified against the SO-8 theta_JA of approximately 62.5 C/W on a 1 oz. copper pour.
IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon
The Infineon IRF7343TRPBF is a dual N- and P-channel enhancement-mode MOSFET array housed in an 8-pin SOIC (SO-8) surface-mount package, designed for complementary half-bridge and synchronous switching topologies. The N-channel section is rated to 55 V VDS and 4.7 A continuous drain current, while the P-channel section delivers 55 V VDS and 3.4 A continuous drain current, with the pair dissipating 2 W of total power. It belongs to Infineon's (formerly International Rectifier) Fifth-Generation HEXFET family using IR MOSFET technology, achieving very low on-resistance per silicon area. A dual MOSFET array integrates two independent MOSFETs into a single package, simplifying PCB layout for half-bridges, full-bridges, and synchronous rectifiers where complementary switching is required. The N+P polarity combination allows designers to implement push-pull stages, H-bridges, and complementary load drivers with one component instead of two discrete devices, saving board area and reducing parasitic inductance between the two switches. This product category sits within the broader hierarchy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor device, and serves as a fundamental building block in switch-mode power conversion and motor control. Key features include 0.043 ohm typical on-resistance for the N-channel, fully avalanche-rated ruggedness, lead-free construction, and generation V technology that minimizes conduction loss. The part is specified for surface-mount reflow assembly and is RoHS compliant, making it suitable for modern lead-free manufacturing lines. The combined 2 W power dissipation and SO-8 thermal footprint enable compact designs without external heatsinking at moderate load currents. Typical applications include DC motor drivers, solenoid and valve drivers, half-bridge and full-bridge converters, battery protection circuits, and synchronous rectifier stages in low-voltage DC-DC converters. The complementary polarity also makes it useful for high-side/low-side gate drive bootstrapping in discrete converter implementations. When designing with this device, ensure the SO-8 pad layout includes adequate copper area on both drain pads for thermal dissipation. Verify that gate drive voltage levels (VGS) comfortably exceed each channel's threshold for the chosen load current, and add a gate-source resistor to prevent parasitic turn-on in half-bridge applications.
IRF7351TRPBF - 60V 8A Dual N-Channel MOSFET SO-8 | Infineon
The Infineon IRF7351TRPBF is a dual N-channel MOSFET array rated 60 V VDS and 8 A continuous drain current per channel in a surface-mount 8-pin SO (SO-8) package. It uses Infineon IR MOSFET technology with a maximum on-resistance of 17.8 mOhm and a total gate charge of 24 nC, optimizing it for synchronous-rectifier and half-/full-bridge DC-DC converter stages. A dual N-channel MOSFET array integrates two N-channel transistors in one package. Compared with two discrete MOSFETs, this integration halves the board area, simplifies gate-drive layout, and reduces parasitic source-inductance asymmetry between the high-side and low-side switches. N-channel MOSFETs require a positive VGS to conduct and are preferred over P-channel parts in low-voltage, high-current rails because their lower RDS(on) per unit silicon area yields higher efficiency. IRF7351TRPBF specifically targets isolated DC-DC converters (forward, half-bridge, full-bridge) used in telecom, server, and distributed-power architectures. Key features include: 60 V drain-source breakdown, 17.8 mOhm maximum RDS(on) at VGS = 10 V, 24 nC total gate charge for fast switching, and 2 W power dissipation in SO-8. The 8-pin SO (SOIC-8) outline is footprint-compatible with industry-standard dual-MOSFET layouts, allowing direct second-source substitution. According to the manufacturer datasheet, the device is lead-free and RoHS-compliant. Architecturally, each die uses a HEXFET-style trench cell with a standard threshold suitable for 10 V gate drive. The two channels share an internal substrate connection to pin 4 (or per the SO-8 dual pinout), which is the standard half-bridge configuration where source of the high-side and drain of the low-side are joined to the switching node. Typical applications include isolated DC-DC converter synchronous rectifiers, secondary-side synchronous rectification in telecom bricks, POL (point-of-load) buck converters, motor-drive H-bridges (low voltage), and Class-D audio output stages. The combination of 60 V rating and 17.8 mOhm RDS(on) makes it a strong fit for 24 V and 48 V input rails. When designing, ensure adequate gate-drive voltage (10 V recommended for full RDS(on)), add a gate-source resistor to prevent parasitic turn-on, and respect the SO-8 thermal budget by using copper pours on the source pins for heatsinking.
IRF7380TRPBF - Dual N-Ch 80V 3.6A MOSFET, SO-8 | Infineon
The Infineon IRF7380TRPBF is a dual N-channel power MOSFET array housed in an industry-standard 8-pin SOIC (SO-8) surface-mount package. Each of the two integrated MOSFETs is rated for 80 V drain-to-source voltage (VDS), 3.6 A continuous drain current (ID), and a maximum on-resistance of 73 mOhm at VGS = 10 V, with the total power dissipation budgeted at 2 W for the package. The 'TRPBF' suffix denotes tape-and-reel packaging with lead-free (Pb-free) terminations, and the device is built on Infineon's IR MOSFET™ process, which delivers a low figure of merit (FOM = RDS(on) × Qg) for high-frequency DC-DC converter efficiency. A dual N-channel MOSFET array (sometimes called a "half-bridge companion" or "synchronous-rectifier pair in one package") is a power-management building block that integrates two independently-controlled N-channel MOSFETs into a single SMD outline. By co-packaging the high-side and low-side switches of a buck or synchronous-rectified converter, this category shrinks the converter's PCB footprint, simplifies gate-drive routing, and reduces parasitic loop inductance between the two FETs - all of which translate directly into lower switching losses and cleaner EMI. Within the broader taxonomy, it sits as: dual MOSFET array -> MOSFET array -> power MOSFET -> discrete semiconductor -> power management building block. Key features of the IRF7380TRPBF include: industry-low on-resistance per cell, low gate charge for fast switching transitions, integrated ESD protection on the gate, RoHS-compliant lead-free plating, and a wide -55C to +150C operating junction temperature range. The SO-8 package offers an exposed copper lead frame that conducts heat to the PCB copper pour, allowing moderate continuous dissipation without an external heatsink. The device is also characterized for avalanche energy, making it rugged against inductive flyback events in converter and motor-drive applications. The IRF7380TRPBF's primary use cases are high-frequency DC-DC converters (buck, boost, and synchronous-rectified topologies), load switches in distributed power architectures, and motor-drive low-side switches in small BLDC or stepper systems. The 80 V rating gives ample headroom for 24 V industrial buses and 48 V telecom rails, while the 3.6 A continuous rating comfortably supports sub-100 W converter stages. Designers typically pair it with a dedicated gate driver (such as the Infineon IR2104) to fully exploit its switching-speed capability. When designing with the IRF7380TRPBF, pay particular attention to gate-drive voltage - the full RDS(on) spec assumes VGS = 10 V, so 3.3 V or 5 V logic-level microcontrollers must be paired with a gate-driver IC. Adequate PCB copper pour under the SO-8 thermal pad is critical: at 2 W dissipation, junction-to-ambient thermal resistance will dominate reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRF7389PBF - 30V N+P HEXFET MOSFET Array SO-8 | Infineon
The Infineon IRF7389PBF is a complementary N+P-channel HEXFET power MOSFET array housed in an 8-pin SO-8 (SOIC-8) surface-mount package. The N-channel section is rated 30V VDS at 7.3A continuous drain current with a maximum on-resistance of 0.029 ohm, while the P-channel section is rated -30V VDS at -5.3A continuous drain current with a maximum on-resistance of 0.058 ohm, both measured at VGS=10V and TA=25C. The device is built on International Rectifier's Generation V HEXFET technology, delivering ultra-low on-resistance, high avalanche rating, and an industry-standard pinout. A HEXFET power MOSFET array is a monolithic dual-MOSFET device that integrates a high-side N-channel and a low-side P-channel (or N+P complementary pair) on a single silicon die, optimized for synchronous rectification, half-bridge, and load-switching topologies. Compared with discrete MOSFETs, HEXFET arrays reduce PCB footprint, simplify gate-drive routing, and minimize parasitic loop inductance, while placing them in the broader hierarchy of power MOSFETs -> power transistors -> discrete semiconductors -> semiconductor devices used in switch-mode power supplies (SMPS) and motor drives. Key features include ultra-low on-resistance (29 mOhm N-ch / 58 mOhm P-ch), Generation V process technology, fully avalanche-rated operation, lead-free and RoHS-compliant construction, and a logic-level compatible gate threshold that simplifies MOSFET driver interfacing. The complementary half-bridge arrangement makes this array a natural fit for synchronous buck converters, Class-D audio output stages, and DC motor H-bridge drivers where one IC replaces two discretes. Architecturally, the IRF7389PBF uses International Rectifier's proprietary Generation V HEXFET process, a planar N-channel and P-channel stripe-cell layout that optimizes cell density and R_DS(on) per unit area. The process also features an intrinsic body diode with specified reverse-recovery behavior, and the device carries an industry-standard SO-8 pinout that drops into existing surface-mount layouts without modification. Typical applications include synchronous buck DC-DC converters, Class-D audio amplifiers, battery protection and load-switch circuits, motor-drive H-bridges, and any space-constrained board that benefits from a single-package N+P complementary pair. According to the manufacturer datasheet, the part is qualified for the consumer market and is compatible with existing surface-mount assembly processes. When designing with this part, calculate the worst-case conduction loss as P = I_DS^2 x R_DS(on) and add switching loss from the gate-charge energy. Both the N-channel and P-channel sections share the same SO-8 thermal pad, so place generous copper pours on pins 1/8 and the die-attach paddle to keep the junction below the 150C maximum rating at full load. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet.
IRF7389TRPBF - 30V Dual N/P HEXFET MOSFET Array | Infineon
The Infineon IRF7389TRPBF is a 30V dual N-channel and P-channel HEXFET power MOSFET array housed in a surface-mount 8-SO (SOIC-8) package, dissipating 2.5W and rated for 7.3A continuous drain current on the N-channel and -5.3A on the P-channel. Built on International Rectifier's fifth-generation HEXFET process (IR MOSFET technology), the device delivers ultra-low on-resistance per silicon area, fast switching speeds, and full avalanche ruggedness in a compact half-bridge configuration. A dual MOSFET array (also called a complementary half-bridge MOSFET or co-pack) integrates one N-channel and one P-channel FET into a single package. This topology, in the broader taxonomy of power MOSFETs, falls under discrete semiconductors, specifically the MOSFETs category, and is commonly used to build synchronous-rectified or push-pull power stages where the N-channel handles the low-side switch and the P-channel handles the high-side switch without requiring a charge pump or bootstrap circuit. The result is a simpler gate-drive architecture and a smaller PCB footprint versus two discrete single-channel MOSFETs. Key features of the IRF7389TRPBF include a 30V drain-to-source breakdown voltage (Vds) on both channels, 29 mOhm maximum on-resistance (RDS(on)) per the Infineon part page, and a thermally efficient SO-8 footprint with a power dissipation rating of 2.5W at TA = 25C. The N-channel and P-channel are matched for symmetrical switching performance, and the device is fully avalanche rated per JEDEC standards. The Generation V process provides a substantial reduction in gate charge and miller capacitance versus prior generations, enabling higher switching frequencies and reduced driver losses. Typical applications for the IRF7389TRPBF include DC-DC converter high-side switches, motor-driver half-bridges, load switches in industrial 24V bus systems, battery protection circuits in portable equipment, and synchronous buck converters where the N+P architecture simplifies the gate-driver design. The complementary polarity makes it ideal for high-side P-channel switching without the complexity of a bootstrap circuit. When designing with this part, ensure the SO-8 thermal pad (if present) is soldered to a sufficient copper pour to keep the junction temperature within the SOA. The 2.5W power dissipation limit is at TA = 25C and derates linearly to zero at 150C, so realistic board-level thermal design is essential. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design considerations not found in the bare datasheet.
IRF7410TRPBF - -12V P-Channel HEXFET MOSFET, 16A, SO-8 | Infineon
The Infineon IRF7410TRPBF is a -12V single P-channel HEXFET power MOSFET in an SO-8 (SOIC-8) surface-mount package, designed for ultra-low on-resistance per silicon area. The device delivers a continuous drain current of 16A (Ta) and a power dissipation of 2.5W (Ta) with a maximum on-resistance of 7 mOhm at VGS=-10V, making it a robust building block for high-efficiency switching in compact footprints. A P-channel MOSFET is a type of field-effect transistor in which the conducting channel is formed by p-type semiconductor material and the device is turned on by pulling the gate voltage below the source voltage. In the system hierarchy, this places the IRF7410TRPBF within discrete semiconductors > MOSFETs > power MOSFETs > P-channel enhancement-mode MOSFETs > HEXFET family. P-channel parts are commonly used as high-side switches in load-management circuits, where driving the gate negative relative to the source is straightforward and eliminates the need for a charge pump. Key electrical features include a drain-source breakdown voltage (VDS) of -12V, a typical gate-source threshold (VGS(th)) of around -1V, a low gate charge of 91 nC, and the low 7 mOhm RDS(on) figure that minimizes conduction loss. The HEXFET process is silicon-optimized for switching frequencies below 100 kHz and offers a planar cell structure that broadens the safe operating area (SOA) for pulsed and direct-current loads. The IRF7410TRPBF uses Infineon's HEXFET power MOSFET technology with a planar cell layout that distributes current evenly across the die, reducing hot-spotting and improving avalanche ruggedness. Product qualification is per JEDEC standards, and the part is specified to industrial temperature grades. The SO-8 package provides a low thermal resistance path when soldered to a 1-square-inch or larger copper pour, and it accepts standard surface-mount assembly. Typical applications include battery management and load switching in portable electronics, high-side switching in power ORing and reverse-polarity protection circuits, DC-DC converters operating at low voltages, motor drive and solenoid drivers, and LED backlight or display power switching. The low gate charge and fast switching transitions also suit hot-swap controllers and inrush limiters in distributed-power systems. When designing with this part, ensure the VDS rating is never exceeded, especially during inductive turn-off transients, and place a TVS or snubber across the drain-source path if switching inductive loads. For highest efficiency, drive the gate with a strong pull-down (low impedance) so that VGS swings quickly between logic high and the threshold region. This page synthesizes distributor pricing, drop-in SO-8 alternatives, and practical design notes not found in the manufacturer datasheet alone.
IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon
The Infineon IRF7416TRPBF is a P-channel 30V HEXFET power MOSFET in an 8-pin SO-8 surface-mount package delivering 10A continuous drain current and a maximum on-resistance of 20 mOhm at VGS = -10V, with a typical total gate charge of 61 nC. Built on Infineon's IR MOSFET process technology, this device is optimized as the high-side or low-side switch in synchronous buck converters, load switches, and battery-protection circuits where polarity reversal and low-side P-channel drive topologies are preferred. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. P-channel variants conduct when the gate is pulled below the source voltage, simplifying high-side switching in positive-rail systems by allowing direct logic-level control without charge pumps or gate drivers. The IRF7416TRPBF belongs to the MOSFET > power MOSFET > P-channel MOSFET > surface-mount MOSFET taxonomy within Infineon's discrete-semiconductor portfolio. Key specifications include a drain-to-source breakdown voltage (VDS) of -30V, continuous drain current (ID) of -10A at TA = 25C, pulsed drain current of -50A, and static drain-to-source on-resistance (RDS(on)) of 20 mOhm maximum at VGS = -10V. The device also features an avalanche-rated single-pulse drain current of -50A, a maximum power dissipation of 2.5W at TA = 25C, and a junction-to-ambient thermal resistance of 50 C/W on the standard SO-8 footprint. Gate threshold voltage (VGS(th)) is rated at -1V to -3V, supporting direct 3.3V or 5V logic-level drive. The IRF7416TRPBF uses Infineon's HEXFET cell structure, which reduces cell pitch and JFET resistance versus planar MOSFETs, lowering conduction loss while maintaining robust avalanche ruggedness. Its low gate charge of 61 nC enables fast switching transitions, reducing switching losses in 500 kHz to 1 MHz buck converters and minimizing dead-time in synchronous rectification. Typical applications include high-side load switching in USB power distribution, notebook and tablet battery management, POL (point-of-load) buck converters, and reverse-polarity protection circuits. The logic-level gate threshold also makes it suitable for direct MCU GPIO drive in low-current switching paths. Designers should observe SO-8 layout best practices: minimize the source-lead PCB loop inductance, use a thermal copper pour of at least 1 square inch under the drain tab, and avoid exceeding the 2.5W package dissipation limit at 25C ambient without forced-air cooling. This page synthesizes current distributor pricing, drop-in alternative cross-references, and practical SO-8 MOSFET design notes not consolidated in the manufacturer datasheet, enabling rapid sourcing and second-source validation for new designs.
IRF7424PBF -30V P-Channel HEXFET MOSFET SO-8 | Infineon
The Infineon IRF7424PBF is a single P-Channel HEXFET power MOSFET rated at -30 V drain-to-source voltage (VDS) with a continuous drain current of -11 A and an ultra-low on-resistance of 13.5 mOhms, packaged in a surface-mount 8-SO (SO-8) body. A P-channel power MOSFET is a voltage-controlled semiconductor switch that conducts when its gate is pulled below the source potential. Within the power-management hierarchy, it sits as a discrete transistor serving as a switching element or high-side load switch inside a broader power management design, complementing controllers, drivers, and regulators. Key features include ultra-low on-resistance of 13.5 mOhms at VGS = -10 V, a total gate charge of 75 nC, 2.5 W power dissipation (Ta), and a planar cell structure that delivers a wide safe operating area. The PbF (lead-free) suffix indicates a RoHS-aligned, lead-free termination finish, and the device is qualified according to JEDEC standards. The HEXFET planar technology uses a vertically structured cellular diffusion process optimized for switching below 100 kHz. The SO-8 package is built on a customized leadframe that improves thermal characteristics versus standard SO-8 bodies, supporting vapor phase, infrared, and wave soldering processes. This enhanced leadframe allows multiple dies and dramatically reduced board space in power applications. Typical applications include battery and load management circuits, high-side power switches in portable and industrial equipment, DC power switching below 100 kHz, and reverse-polarity or power-path protection where a P-channel device avoids the need for a charge pump. The -30 V rating covers 12 V and 24 V bus environments with margin. Design consideration: as a planar P-channel MOSFET optimized for sub-100 kHz switching, it is not the lowest-Qg device available (75 nC); for very high-frequency converters consider a trench-FET alternative, but for robust load switching its wide SOA is an advantage. This page synthesizes distributor pricing, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with data verified as of 2026-09-11.
IRF7469TRPBF - 40V N-Ch 9A 17mOhm SO-8 MOSFET | Infineon
The Infineon IRF7469TRPBF is an N-channel power MOSFET rated at 40 V drain-source breakdown voltage, 9 A continuous drain current, and 17 mΩ maximum on-state resistance, housed in a surface-mount 8-pin SO-8 (SOIC-8) package. It uses Infineon's IR MOSFET™ technology optimized for high-frequency isolated DC-DC converter applications with low gate charge of 15 nC. The device dissipates 2.5 W at TA = 25 °C and supports ±20 V gate-to-source voltage rating. A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals in response to gate voltage. N-channel enhancement-mode MOSFETs like the IRF7469 are the dominant switching element in synchronous buck converters, synchronous boost converters, motor drives, and load switches because they offer low Rds(on) per unit silicon area, fast switching, and simple gate drive. The technology category hierarchy is: MOSFET → power transistor → discrete semiconductor → semiconductor device. The IR MOSFET™ process used here is a planar HEXFET-style trench variant optimized for low gate charge and high dv/dt immunity. Key differentiating specifications include 17 mΩ max Rds(on) at VGS = 10 V, 15 nC total gate charge (Qg), and an SO-8 footprint compatible with industry-standard 8-pin land patterns. The low Qg enables sub-100 ns switching transitions at moderate gate-drive currents, which reduces switching losses in 12 V to 3.3 V buck regulators operating at 500 kHz to 1 MHz. The device is rated for operation from -55 °C to +150 °C junction temperature. Typical applications include high-frequency isolated DC-DC converters (primary-side switch), synchronous rectification in 12 V buck regulators, motor control H-bridges, battery protection circuits, and hot-swap load switches. The 40 V drain rating provides ample margin above the 24 V industrial bus and 12 V automotive rails that dominate these topologies. When designing with the IRF7469, ensure the gate-drive voltage reaches 10 V for full Rds(on) enhancement. Place the gate-drive resistor close to the gate pin to dampen parasitic ringing, and use a Kelvin source connection (pin 7/8) for accurate current sensing in high-current paths. The 2.5 W continuous dissipation limit means most applications require pulsed operation or substantial copper pour.
IRF7480MTRPBF - 40V 217A N-Channel StrongIRFET MOSFET | Infineon
The Infineon IRF7480MTRPBF is a 40 V single N-Channel StrongIRFET power MOSFET rated for 217 A continuous drain current (Tc) and 96 W power dissipation (Tc), housed in a surface-mount DirectFET Isometric ME package. It is part of Infineon's StrongIRFET family optimized for very low on-state resistance (1.2 mOhm maximum at 10 V Vgs) and high current capability, making it suitable for high-efficiency power conversion stages where conduction losses dominate. The -TR suffix indicates tape-and-reel packaging with a standard reel quantity of 4800 pieces (the 7-inch reel 1000-piece variant is IRF7480MTR1PBF). A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert or regulate electrical energy. Within the power-semiconductor taxonomy, MOSFETs belong to the discrete transistor family, which in turn is a subset of discrete semiconductors. N-channel enhancement-mode MOSFETs like the IRF7480MTRPBF are the workhorse of low-voltage, high-current switching applications because their majority-carrier conduction mechanism delivers fast switching and low RDS(on), unlike IGBTs which are preferred above ~600 V. StrongIRFET is Infineon's brand name for MOSFETs targeting industrial motor drive, battery protection, and synchronous rectification, competing with OptiMOS and similar platforms from other vendors. Key differentiating specifications of the IRF7480MTRPBF include: 40 V drain-source breakdown (VDS), 217 A continuous drain current at 25 C case temperature, 1.2 mOhm maximum on-resistance at VGS = 10 V, and a DirectFET ME package that exposes the die on both sides of the package for top-side cooling. The DirectFET metal-can-style LGA construction eliminates traditional wire bonds, reducing package inductance and improving thermal performance versus standard SO-8 or DPAK equivalents. Gate threshold voltage is typically in the 1.8 V to 2.5 V range, with full enhancement at 10 V drive. Typical applications include brushed and BLDC motor drive, synchronous rectification in isolated DC-DC converters, battery protection circuits, half-bridge and full-bridge topologies, OR-ing and redundant power switches, and resonant-mode power supplies such as LLC converters. The combination of very low RDS(on) and a thermally enhanced package makes it well suited to high-current, high-efficiency designs where PCB copper area is limited. When designing with this part, observe the safe operating area (SOA) carefully at high VDS and high duty cycles, and use a gate driver capable of sourcing/sinking several amperes to achieve the nanosecond-class switching times the DirectFET package enables. Because the package has an exposed metal can on both sides, the PCB land pattern is unique to DirectFET and is not interchangeable with D2PAK or DPAK layouts.
IRF7495TRPBF - 100V 7.3A N-Channel MOSFET | Infineon
The Infineon IRF7495TRPBF is an N-channel power MOSFET rated at 100 V VDS and 7.3 A continuous drain current (Ta), housed in an 8-pin SO-8 surface-mount package. Built on Infineon's IR MOSFET technology platform, it delivers a low typical on-resistance of 22 mOhm and a low gate-to-drain charge designed to reduce switching losses in high-frequency converter stages. A power MOSFET is a voltage-controlled semiconductor switch used in power conversion circuits. The N-channel enhancement-mode MOSFET sits within the broader hierarchy of power discrete semiconductors: MOSFET -> transistor -> discrete semiconductor -> semiconductor. Within power-electronics subsystems, N-channel MOSFETs such as the IRF7495TRPBF typically serve as low-side or high-side switches in DC-DC converters, motor drivers, and load-switching paths, replacing older bipolar transistors because they require essentially no steady-state gate drive current. Key parametric strengths include a maximum drain-source voltage of 100 V, continuous drain current of 7.3 A at TA=25 C, and pulsed drain current capability suitable for transient loads. The device features an ultra-low gate charge of 34 nC typical and maximum RDS(on) of 22 mOhm at VGS=10 V, ID=4.4 A. These parameters translate to lower conduction losses and reduced gate-drive requirements, which simplifies the upstream PWM controller selection. Architecturally, the IRF7495TRPBF uses a planar-style trenchFET-class cell design with a low figure-of-merit (RDS(on) x Qg) optimized for synchronous rectification. The fully characterized capacitance profile, including effective COSS, simplifies the calculation of dead-time and resonant-tank behavior in LLC, half-bridge, and active-clamp forward topologies. The standard SO-8 footprint allows direct drop-in replacement into existing layouts without PCB rework. Typical applications include high-frequency DC-DC converters (synchronous-rectifier and primary-side switch), high-side load switches in telecom and networking equipment, battery protection circuits in 12 V to 36 V packs, and motor-drive H-bridges up to a few hundred watts. The 100 V rating provides adequate margin for 24 V industrial buses and 48 V telecom rails. When designing with this part, ensure VGS is driven to at least 10 V for full enhancement into the lowest RDS(on) region. A low-impedance gate-drive path with a series gate resistor of 10 to 100 ohm is recommended to control ringing and EMI. The SO-8 thermal pad should be soldered to a copper pour of at least 1 square inch to keep junction temperature within safe limits at full load. This page synthesizes distributor pricing, drop-in alternatives in the same SO-8 footprint, and practical design notes not found in the manufacturer datasheet alone.
IRF7749L1TRPBF - 60V N-Channel HEXFET MOSFET DirectFET L8
The Infineon IRF7749L1TRPBF is a 60 V, N-Channel HEXFET power MOSFET in a surface-mount DirectFET Isometric L8 package rated for 33 A continuous drain current at TA=25 C and 200 A pulsed at TC=25 C, with a maximum on-resistance of 1.5 mOhm at VGS=10 V. A power MOSFET is a voltage-controlled metal-oxide-semiconductor field-effect transistor designed to switch or amplify power in electronic systems. The IRF7749L1 belongs to the HEXFET Power MOSFET family, a N-Channel enhancement-mode device in the DirectFET (L8 isometric) surface-mount package. The DirectFET package provides a top-side cooling path through a metal can, dramatically lowering thermal resistance compared to standard SO-8 or DPAK packages, which is critical for high-current DC-DC conversion where every milliohm of RDS(on) counts. Key features include an ultra-low typical on-resistance of 1.1 mOhm at VGS=10 V, a 2.9 V minimum gate-threshold rating optimized for logic-level and standard 5 V gate drive, and a continuous drain current of 200 A at TC. The device also offers a low total gate charge of 200 nC maximum, a maximum drain-source voltage of 60 V, and a junction-to-ambient thermal resistance of 45 K/W. The DirectFET L8 package allows top-side cooling via the metal can. The IRF7749L1 is built on Infineon's IR MOSFET silicon technology with an optimized cell structure that minimizes RDS(on) per unit area while maintaining avalanche ruggedness. The DirectFET L8 isometric package eliminates wire bonds and exposes the silicon die directly to a top-side metal can for double-sided cooling, which improves both thermal performance and current-handling density. The 2.9 V gate threshold ensures clean enhancement with low-voltage gate drivers and microcontrollers. Typical applications include synchronous rectification in high-current DC-DC converters, high-density VRM and POL modules for servers and datacenters, OR-ing FETs in redundant power systems, hot-swap controllers on 48 V telecom boards, and high-current motor drive bridges. The combination of 1.1 mOhm RDS(on) and DirectFET thermal performance makes it ideal for point-of-load converters requiring high efficiency at >30 A per phase. When designing with this part, observe the SOA carefully because pulsed drain current of 200 A is only achievable with substantial case cooling; at TA=25 C with minimum footprint copper, expect continuous current closer to 33 A. The DirectFET L8 footprint requires precise land pattern adherence per Infineon's application note, and a top-side thermal pad or heatsink should be considered for high-duty-cycle operation. This page synthesizes distributor pricing, drop-in alternatives, and DirectFET-specific design notes not found in the manufacturer datasheet alone, helping engineers evaluate the IRF7749L1TRPBF for high-current DC-DC applications.
IRF7769L1TRPBF - 100V N-Channel HEXFET MOSFET | Infineon
The Infineon IRF7769L1TRPBF is a 100 V single N-channel HEXFET power MOSFET housed in a DirectFET Isometric L8 surface-mount package with only 0.7 mm profile. It is rated for 20 A continuous drain current at TA=25C, 124 A at TC=25C, with 3.3 W power dissipation at TA and 125 W at TC. The die uses Infineon's latest-generation HEXFET silicon technology to deliver a maximum on-state resistance of 3.5 mOhm at VGS=10 V and a low typical gate charge of 200 nC, making it well suited to high-frequency switching and synchronous rectification. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when VGS exceeds the gate threshold; the N-channel enhancement-mode variant is the workhorse of switched-mode power supplies, motor drives, and OR-ing functions. Within the broader taxonomy it sits under discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> N-channel enhancement-mode. DirectFET packaging removes the plastic molding and lead frame found in D2PAK or SO-8 parts, exposing the silicon die to the PCB for direct top-side cooling and dramatically reducing source-inductance parasitic losses. Key features include 3.5 mOhm maximum RDS(on) at 10 V VGS, a logic-level-friendly 4.5 V gate drive capability, a 100 V VDS rating that gives substantial headroom for 48 V telecom and industrial bus rails, and a thermally efficient DirectFET L8 land pattern. The package footprint is smaller than a D2PAK while achieving lower junction-to-case thermal resistance, enabling higher power density on the same board area. The IRF7769L1 is optimized for high-frequency switching and synchronous rectification applications. The reduced total gate charge and switching losses, combined with the high thermal performance of DirectFET, allow high efficiency at elevated switching frequencies - critical for system reliability and for shrinking magnetics in isolated DC-DC converters. The device is qualified to MSL1 and supports lead-free, halogen-free reflow up to 260C. Typical applications include isolated DC-DC converter primary-side switches, synchronous rectification on secondary-side low-voltage rails, hot-swap and OR-ing controllers in 48 V telecom systems, and high-current POL (point-of-load) converters. The 124 A pulsed rating also makes the part attractive for motor-drive half-bridges and e-fuse circuits. When designing with this device, follow DirectFET land-pattern guidelines and use the top-side thermal pad or copper pour to conduct heat away from the die. Gate-drive resistors of 5-10 ohm are recommended to suppress ringing at switching frequencies above 500 kHz, and the source-sensing pin should be tied directly to the source pad to avoid Cdv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, enabling engineers to evaluate fit, sourcing, and PCB layout decisions in one place.