1ED3124MU12HXUMA1 vs 1EDB7275FXUMA1 Comparación
Comparación detallada lado a lado de 1ED3124MU12HXUMA1 por Infineon y 1EDB7275FXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3124MU12HXUMA1 | 1EDB7275FXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $1,68 |
| Product Type | Single-channel isolated gate driver IC | Single-channel isolated gate driver IC |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| Configuración de salida | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | 300 V/ns (minimum) |
| Propagation Delay (typ.) | 90 ns | — |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | Coreless transformer (CT) magnetic coupling |
| Encapsulado | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-8 (150 mil DSO, 8-pin) |
| Creepage Distance | >8 mm | — |
| Rango de temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: full operating temperature range] |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL2 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Topology Supported | — | High-side / low-side, half-bridge (with two parts) |
| Isolation Voltage (Viso) | — | 3000 Vrms |
| Peak Source Output Current | — | 5.4 A (typical) |
| Peak Sink Output Current | — | 9.8 A (typical) |
| Propagation Delay | — | +6 / -4 ns (typical, see datasheet family) |
| Supported Switch Technologies | — | Si MOSFET, SiC MOSFET, GaN HEMT |
| UVLO Protection | — | Yes (secondary side) |
| Marking Code | — | 1B7275A |