1ED3124MU12HXUMA1 vs 1EDB7275FXUMA1 비교
다음의 상세 나란히 비교: 1ED3124MU12HXUMA1 제조: Infineon 및 1EDB7275FXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 1ED3124MU12HXUMA1 | 1EDB7275FXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.89 | $1.68 |
| Product Type | Single-channel isolated gate driver IC | Single-channel isolated gate driver IC |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| 출력 구성 | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | 300 V/ns (minimum) |
| Propagation Delay (typ.) | 90 ns | — |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | Coreless transformer (CT) magnetic coupling |
| 패키지 | PG-DSO-8-66 (DSO-8 wide-body) | PG-DSO-8 (150 mil DSO, 8-pin) |
| Creepage Distance | >8 mm | — |
| 동작 온도 범위 | -40C to +125C | [DATA_NEEDED: full operating temperature range] |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL2 (per JEDEC J-STD-020) | — |
| RoHS 상태 | Compliant | Compliant |
| Topology Supported | — | High-side / low-side, half-bridge (with two parts) |
| Isolation Voltage (Viso) | — | 3000 Vrms |
| Peak Source Output Current | — | 5.4 A (typical) |
| Peak Sink Output Current | — | 9.8 A (typical) |
| Propagation Delay | — | +6 / -4 ns (typical, see datasheet family) |
| Supported Switch Technologies | — | Si MOSFET, SiC MOSFET, GaN HEMT |
| UVLO Protection | — | Yes (secondary side) |
| Marking Code | — | 1B7275A |