1ED3142MU12FXUMA1 vs 1ED020I12B2XUMA1 Comparación
Comparación detallada lado a lado de 1ED3142MU12FXUMA1 por Infineon y 1ED020I12B2XUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MU12FXUMA1 - 6.5A Isolated Gate Driver SiC/IGBT | Infineon
1ED3142MU12FXUMA1 ✓ ActivoInfineon
1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
1ED020I12B2XUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3142MU12FXUMA1 | 1ED020I12B2XUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,94 | $2,65 |
| Product Type | Galvanically Isolated Gate Driver IC | — |
| Number of Channels | 1 | 1 |
| Peak Source/Sink Output Current | 6.5 A (typical) | — |
| Isolation Technology | Coreless Transformer (CT) | Coreless transformer (magnetic coupling) |
| Isolation Voltage (DigiKey rating) | 3000 Vrms | — |
| Isolation Voltage (Manufacturer datasheet) | 2300 V | — |
| Output Supply Voltage (VCC2-VEE2) | [DATA_NEEDED: max value, typical datasheet 25 V max] | — |
| Input Supply Voltage (VCC1) | [DATA_NEEDED: value] | — |
| Propagation Delay (typical) | 42 ns | — |
| Target Power Switches | SiC MOSFETs, IGBTs, MOSFETs | — |
| Encapsulado | PG-DSO-8-72 (wide-body DSO-8) | PG-DSO-16-15 (300 mil wide-body DSO-16) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction/ambient range] | — |
| Protection Features | UVLO (output-side), DESAT short-circuit detection | — |
| Output Stage | Separate source/sink pins, totem-pole | — |
| Estado RoHS | Compliant | — |
| Family | Infineon EiceDRIVER 1ED31xx | — |
| Driver Type | — | Single-channel IGBT gate driver, galvanically isolated |
| Isolation Voltage (Vrms) | — | 4500 Vrms |
| Output Current (typ.) | — | 2 A source / 2 A sink |
| Propagation Delay (typ.) | — | 35 ns |
| Supported Switch Voltage Class | — | Up to 1200 V IGBT / SiC MOSFET |
| DESAT Protection | — | Yes (programmable threshold) |
| Miller Clamp | — | Yes (integrated 2 A clamp FET) |
| Input Supply (VCC1) | — | 5 V (logic side) |
| Output Supply (VCC2) | — | Unipolar 15 V or bipolar -8.5 V / 15 V |
| Creepage Distance | — | 8 mm |
| Temperatura de funcionamiento | — | -40 °C to +125 °C |
| Nivel MSL | — | MSL-3 (per JEDEC J-STD-020) |
| Compliance | — | RoHS compliant |