1ED3142MU12FXUMA1 vs 1ED020I12B2XUMA1 비교

다음의 상세 나란히 비교: 1ED3142MU12FXUMA1 제조: Infineon 및 1ED020I12B2XUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 1ED3142MU12FXUMA1 1ED020I12B2XUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.94 $2.65
Product Type Galvanically Isolated Gate Driver IC —
Number of Channels 1 1
Peak Source/Sink Output Current 6.5 A (typical) —
Isolation Technology Coreless Transformer (CT) Coreless transformer (magnetic coupling)
Isolation Voltage (DigiKey rating) 3000 Vrms —
Isolation Voltage (Manufacturer datasheet) 2300 V —
Output Supply Voltage (VCC2-VEE2) [DATA_NEEDED: max value, typical datasheet 25 V max] —
Input Supply Voltage (VCC1) [DATA_NEEDED: value] —
Propagation Delay (typical) 42 ns —
Target Power Switches SiC MOSFETs, IGBTs, MOSFETs —
패키지 PG-DSO-8-72 (wide-body DSO-8) PG-DSO-16-15 (300 mil wide-body DSO-16)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: junction/ambient range] —
Protection Features UVLO (output-side), DESAT short-circuit detection —
Output Stage Separate source/sink pins, totem-pole —
RoHS 상태 Compliant —
Family Infineon EiceDRIVER 1ED31xx —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
동작 온도 — -40 °C to +125 °C
MSL 레벨 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

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