1EDI60N12AFXUMA1 vs 1ED3124MU12HXUMA1 Comparación
Comparación detallada lado a lado de 1EDI60N12AFXUMA1 por Infineon y 1ED3124MU12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 ✓ ActivoInfineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1EDI60N12AFXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,21 | $0,89 |
| Driver Configuration | Single high-side, galvanically isolated | — |
| Number of Channels | 1 | — |
| Isolation Type | Magnetic (coreless transformer) | — |
| Isolation Voltage | 1200 V working voltage | — |
| Maximum Output Voltage | 40 V | — |
| Source Current (typ.) | 10 A | — |
| Sink Current (typ.) | 9.4 A | — |
| Supply Voltage (VDD) | 3.1 V to 17 V | — |
| Propagation Delay (typ.) | 120 ns | 90 ns |
| Input Logic Compatibility | 3.3 V and 5 V CMOS/TTL | — |
| Creepage Distance (min.) | 4 mm | — |
| Short-Circuit Clamping | Yes (separate sink/source outputs) | — |
| Temperatura de funcionamiento | -40C to +125C | — |
| Encapsulado | PG-DSO-8-51 (DSO-8) | PG-DSO-8-66 (DSO-8 wide-body) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | MSL2 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Product Type | — | Single-channel isolated gate driver IC |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Configuración de salida | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Common-Mode Transient Immunity (CMTI) | — | 200 kV/us minimum |
| UVLO Threshold | — | 10.5 V |
| Isolation Technology | — | Coreless transformer (CT) |
| Creepage Distance | — | >8 mm |
| Rango de temperatura de funcionamiento | — | -40C to +125C |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |