1EDI60N12AFXUMA1 vs 1ED3124MU12HXUMA1 Comparison
Detailed side-by-side comparison of 1EDI60N12AFXUMA1 by Infineon and 1ED3124MU12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 β ActiveInfineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1EDI60N12AFXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $0.89 |
| Driver Configuration | Single high-side, galvanically isolated | β |
| Number of Channels | 1 | β |
| Isolation Type | Magnetic (coreless transformer) | β |
| Isolation Voltage | 1200 V working voltage | β |
| Maximum Output Voltage | 40 V | β |
| Source Current (typ.) | 10 A | β |
| Sink Current (typ.) | 9.4 A | β |
| Supply Voltage (VDD) | 3.1 V to 17 V | β |
| Propagation Delay (typ.) | 120 ns | 90 ns |
| Input Logic Compatibility | 3.3 V and 5 V CMOS/TTL | β |
| Creepage Distance (min.) | 4 mm | β |
| Short-Circuit Clamping | Yes (separate sink/source outputs) | β |
| Operating Temperature | -40C to +125C | β |
| Package | PG-DSO-8-51 (DSO-8) | PG-DSO-8-66 (DSO-8 wide-body) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL2 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Product Type | β | Single-channel isolated gate driver IC |
| Manufacturer Family | β | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | β | 14 A typical |
| Output Configuration | β | Separate source and sink pins |
| Galvanic Isolation (rms) | β | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | β | 1200 V |
| Common-Mode Transient Immunity (CMTI) | β | 200 kV/us minimum |
| UVLO Threshold | β | 10.5 V |
| Isolation Technology | β | Coreless transformer (CT) |
| Creepage Distance | β | >8 mm |
| Operating Temperature Range | β | -40C to +125C |
| Target Switch Types | β | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | β | Up to 2300 V IGBT / SiC modules |