1EDI60N12AFXUMA1 vs 1ED3124MU12HXUMA1 Comparaison
Comparaison détaillée côte à côte de 1EDI60N12AFXUMA1 par Infineon et 1ED3124MU12HXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
1EDI60N12AFXUMA1 - 1200V Isolated Gate Driver, 10A Source/9.4A Sink | Infineon
1EDI60N12AFXUMA1 ✓ ActifInfineon
1ED3124MU12HXUMA1 - 14A Isolated Gate Driver | Infineon EiceDRIVER
1ED3124MU12HXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1EDI60N12AFXUMA1 | 1ED3124MU12HXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,21 | $0,89 |
| Driver Configuration | Single high-side, galvanically isolated | — |
| Number of Channels | 1 | — |
| Isolation Type | Magnetic (coreless transformer) | — |
| Isolation Voltage | 1200 V working voltage | — |
| Maximum Output Voltage | 40 V | — |
| Source Current (typ.) | 10 A | — |
| Sink Current (typ.) | 9.4 A | — |
| Supply Voltage (VDD) | 3.1 V to 17 V | — |
| Propagation Delay (typ.) | 120 ns | 90 ns |
| Input Logic Compatibility | 3.3 V and 5 V CMOS/TTL | — |
| Creepage Distance (min.) | 4 mm | — |
| Short-Circuit Clamping | Yes (separate sink/source outputs) | — |
| Température de fonctionnement | -40C to +125C | — |
| Boîtier | PG-DSO-8-51 (DSO-8) | PG-DSO-8-66 (DSO-8 wide-body) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | MSL2 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant |
| Product Type | — | Single-channel isolated gate driver IC |
| Manufacturer Family | — | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) |
| Peak Output Current (source/sink) | — | 14 A typical |
| Configuration de sortie | — | Separate source and sink pins |
| Galvanic Isolation (rms) | — | 5.7 kV (UL 1577) |
| Working Voltage (continuous) | — | 1200 V |
| Common-Mode Transient Immunity (CMTI) | — | 200 kV/us minimum |
| UVLO Threshold | — | 10.5 V |
| Isolation Technology | — | Coreless transformer (CT) |
| Creepage Distance | — | >8 mm |
| Plage de température de fonctionnement | — | -40C to +125C |
| Target Switch Types | — | IGBT, power MOSFET, SiC MOSFET |
| Recommended Switch Class | — | Up to 2300 V IGBT / SiC modules |