1EDN7126GXTMA1 vs 1ED3142MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1EDN7126GXTMA1 por Infineon y 1ED3142MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1EDN7126GXTMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,29 | $1,32 |
| Función | Single-channel TDI gate driver for GaN HEMT and Si MOSFET | — |
| Configuration | Non-Inverting | Inverting, Non-Inverting |
| Channel Type | Single | — |
| Driven Supply Voltage | [DATA_NEEDED: VCC max value] | — |
| Peak Source Current | 1.5 A | — |
| Peak Sink Current | 1.5 A | — |
| Common-Mode Voltage (CMR) | 200 V | — |
| Input Type | Truly Differential Input (TDI) | — |
| Propagation Delay (Typ.) | [DATA_NEEDED: tpd typical value] | — |
| Rise / Fall Time (Typ.) | [DATA_NEEDED: tr / tf typical value] | — |
| Rango de temperatura de funcionamiento | -40C to +125C | — |
| Encapsulado | PG-VSON-10-4 | PG-DSO-8 (PG-LDSO-8-1) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | — |
| Reach | Compliant | — |
| Lead-Free | Yes | — |
| Input Logic Compatibility | 3.3 V / 5 V TTL/CMOS (TDI) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | 1ED3142MC12HXUMA1 |
| Product Family | — | EiceDRIVER X3 Compact |
| Driver Type | — | Isolated single-channel gate driver |
| Isolation Technology | — | Coreless transformer (galvanic) |
| Isolation Voltage | — | 3000 Vrms |
| Number of Channels | — | 1 |
| Número de salidas | — | 2 (separate source/sink) |
| Source Drive Current | — | 6 A |
| Sink Drive Current | — | 6.5 A |
| Maximum Rise Time | — | 20 ns |
| Maximum Fall Time | — | 20 ns |
| Propagation Delay (typ.) | — | 40 ns |
| Supported Switches | — | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | — | Compliant |
| Part Status | — | Active |
| ECCN | — | EAR99 |