1EDN7126GXTMA1 vs 1ED3142MC12HXUMA1 Comparison

Detailed side-by-side comparison of 1EDN7126GXTMA1 by Infineon and 1ED3142MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7126GXTMA1 1ED3142MC12HXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.29 $1.32
Function Single-channel TDI gate driver for GaN HEMT and Si MOSFET β€”
Configuration Non-Inverting Inverting, Non-Inverting
Channel Type Single β€”
Driven Supply Voltage [DATA_NEEDED: VCC max value] β€”
Peak Source Current 1.5 A β€”
Peak Sink Current 1.5 A β€”
Common-Mode Voltage (CMR) 200 V β€”
Input Type Truly Differential Input (TDI) β€”
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] β€”
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] β€”
Operating Temperature Range -40C to +125C β€”
Package PG-VSON-10-4 PG-DSO-8 (PG-LDSO-8-1)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant β€”
Reach Compliant β€”
Lead-Free Yes β€”
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” 1ED3142MC12HXUMA1
Product Family β€” EiceDRIVER X3 Compact
Driver Type β€” Isolated single-channel gate driver
Isolation Technology β€” Coreless transformer (galvanic)
Isolation Voltage β€” 3000 Vrms
Number of Channels β€” 1
Number of Outputs β€” 2 (separate source/sink)
Source Drive Current β€” 6 A
Sink Drive Current β€” 6.5 A
Maximum Rise Time β€” 20 ns
Maximum Fall Time β€” 20 ns
Propagation Delay (typ.) β€” 40 ns
Supported Switches β€” IGBT, MOSFET, SiC MOSFET
EU RoHS β€” Compliant
Part Status β€” Active
ECCN β€” EAR99

Datasheets & Resources

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