1EDN7126GXTMA1 vs 1ED3142MC12HXUMA1 对比

详细并排对比 1EDN7126GXTMA1 出自 Infineon 和 1ED3142MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDN7126GXTMA1 1ED3142MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.29 $1.32
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET —
Configuration Non-Inverting Inverting, Non-Inverting
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作温度范围 -40C to +125C —
封装 PG-VSON-10-4 PG-DSO-8 (PG-LDSO-8-1)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant —
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) —
Manufacturer — Infineon Technologies
Part Number — 1ED3142MC12HXUMA1
Product Family — EiceDRIVER X3 Compact
Driver Type — Isolated single-channel gate driver
Isolation Technology — Coreless transformer (galvanic)
Isolation Voltage — 3000 Vrms
Number of Channels — 1
输出数量 — 2 (separate source/sink)
Source Drive Current — 6 A
Sink Drive Current — 6.5 A
Maximum Rise Time — 20 ns
Maximum Fall Time — 20 ns
Propagation Delay (typ.) — 40 ns
Supported Switches — IGBT, MOSFET, SiC MOSFET
EU RoHS — Compliant
Part Status — Active
ECCN — EAR99

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