1N5711UR-1 vs 1N5711 Comparación
Comparación detallada lado a lado de 1N5711UR-1 por Microchip Technology y 1N5711 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1N5711UR-1 | 1N5711 |
|---|---|---|
| Marca | Microchip Technology | STMicroelectronics |
| Categoría | Diodes | Diodes |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,18 |
| Diode Type | Schottky barrier diode | Small-signal Schottky barrier (RF) diode |
| Reverse Voltage (Vr) | 50 V | — |
| Average Forward Current | 33 mA | — |
| Configuration | Single diode | — |
| Encapsulado | DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass | DO-35 (DO-204AH) hermetic axial-lead glass |
| Tipo de montaje | Surface Mount | Through-Hole |
| Construction | Metallurgically bonded | — |
| Qualification Grade | Military grade (1N prefix, high reliability) | — |
| Terminal Finish | Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) | — |
| Solderability | MIL-STD-750 method 2026 | — |
| Family Members | 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Forward Voltage (Vf) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Current (Ir) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Forward Voltage (VF) | — | 0.41 V (at 1 mA, per MACOM) |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |