1N5711UR-1 vs 1N5711 Comparaison
Comparaison détaillée côte à côte de 1N5711UR-1 par Microchip Technology et 1N5711 par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | 1N5711UR-1 | 1N5711 |
|---|---|---|
| Marque | Microchip Technology | STMicroelectronics |
| Catégorie | Diodes | Diodes |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,18 |
| Diode Type | Schottky barrier diode | Small-signal Schottky barrier (RF) diode |
| Reverse Voltage (Vr) | 50 V | — |
| Average Forward Current | 33 mA | — |
| Configuration | Single diode | — |
| Boîtier | DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass | DO-35 (DO-204AH) hermetic axial-lead glass |
| Type de montage | Surface Mount | Through-Hole |
| Construction | Metallurgically bonded | — |
| Qualification Grade | Military grade (1N prefix, high reliability) | — |
| Terminal Finish | Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) | — |
| Solderability | MIL-STD-750 method 2026 | — |
| Family Members | 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Forward Voltage (Vf) | [DATA_NEEDED: forward voltage at rated current] | — |
| Reverse Current (Ir) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Capacitance | [DATA_NEEDED: junction capacitance] | — |
| Statut RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Peak Reverse Voltage (VRRM) | — | 70 V |
| Continuous Forward Current (IF) | — | 15 mA |
| Power Dissipation | — | 430 mW |
| Forward Voltage (VF) | — | 0.41 V (at 1 mA, per MACOM) |
| Total Capacitance | — | 2 pF |
| Junction Capacitance (Cj) | — | 1 pF |
| Dynamic Resistance | — | 35 ohm |
| Breakdown Voltage (VB) | — | 70 V |
| Switching Speed | — | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | — | Metal-to-silicon junction with PN guard ring |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current at rated VR] |