1N5711UR-1 vs 1N5711 비교

다음의 상세 나란히 비교: 1N5711UR-1 제조: Microchip Technology 및 1N5711 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Microchip Technology
1N5711UR-1 1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip

1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip

1N5711UR-1 ✓ 활성

사양 비교

파라미터 1N5711UR-1 1N5711
브랜드 Microchip Technology STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.18
Diode Type Schottky barrier diode Small-signal Schottky barrier (RF) diode
Reverse Voltage (Vr) 50 V —
Average Forward Current 33 mA —
Configuration Single diode —
패키지 DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass DO-35 (DO-204AH) hermetic axial-lead glass
실장 유형 Surface Mount Through-Hole
Construction Metallurgically bonded —
Qualification Grade Military grade (1N prefix, high reliability) —
Terminal Finish Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) —
Solderability MIL-STD-750 method 2026 —
Family Members 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents —
동작 온도 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Forward Voltage (Vf) [DATA_NEEDED: forward voltage at rated current] —
Reverse Current (Ir) [DATA_NEEDED: reverse leakage current] —
Junction Capacitance [DATA_NEEDED: junction capacitance] —
RoHS 상태 [DATA_NEEDED: RoHS compliance status] Compliant
Peak Reverse Voltage (VRRM) — 70 V
Continuous Forward Current (IF) — 15 mA
Power Dissipation — 430 mW
Forward Voltage (VF) — 0.41 V (at 1 mA, per MACOM)
Total Capacitance — 2 pF
Junction Capacitance (Cj) — 1 pF
Dynamic Resistance — 35 ohm
Breakdown Voltage (VB) — 70 V
Switching Speed — Picosecond class (ultrafast, no minority-carrier storage)
Junction Structure — Metal-to-silicon junction with PN guard ring
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current at rated VR]

데이터시트 & 자료

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