2ED3140MC12LXUMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 2ED3140MC12LXUMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2ED3140MC12LXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,38 | $1,45 |
| Product Type | Isolated Gate Driver | — |
| Topología | Dual-channel, half-bridge capable | — |
| Number of Channels | 2 | — |
| Peak Source Current | 6 A | 13.5 A |
| Peak Sink Current | 6.5 A | 14 A |
| Isolation Voltage (Vrms) | 5700 Vrms | — |
| Isolation Technology | Capacitive coupling (coreless transformer) | Magnetic coupling (coreless transformer) |
| UVLO Threshold | 8.5 V | — |
| Supported Switches | IGBT, MOSFET, SiC MOSFET up to 2300 V | — |
| Dead-Time Control | Integrated, resistor-programmable | — |
| Encapsulado | PG-DSO-14-71 (DSO-14 wide-body, 300 mil) | PG-DSO-8 (DSO-8) |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature] | — |
| Propagation Delay | [DATA_NEEDED: propagation delay] | — |
| Creepage Distance | >8 mm (per package) | — |
| Safety Certification | UL 1577 recognized | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes / Compliant | — |
| Channel Configuration | Independent or half-bridge | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Número de salidas | — | 1 |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |
| Estado RoHS | — | Compliant |