2ED3140MC12LXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2ED3140MC12LXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2ED3140MC12LXUMA1
2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon
2ED3140MC12LXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2ED3140MC12LXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.45 |
| Product Type | Isolated Gate Driver | β |
| Topology | Dual-channel, half-bridge capable | β |
| Number of Channels | 2 | β |
| Peak Source Current | 6 A | 13.5 A |
| Peak Sink Current | 6.5 A | 14 A |
| Isolation Voltage (Vrms) | 5700 Vrms | β |
| Isolation Technology | Capacitive coupling (coreless transformer) | Magnetic coupling (coreless transformer) |
| UVLO Threshold | 8.5 V | β |
| Supported Switches | IGBT, MOSFET, SiC MOSFET up to 2300 V | β |
| Dead-Time Control | Integrated, resistor-programmable | β |
| Package | PG-DSO-14-71 (DSO-14 wide-body, 300 mil) | PG-DSO-8 (DSO-8) |
| Operating Temperature Range | [DATA_NEEDED: operating temperature] | β |
| Propagation Delay | [DATA_NEEDED: propagation delay] | β |
| Creepage Distance | >8 mm (per package) | β |
| Safety Certification | UL 1577 recognized | β |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes / Compliant | β |
| Channel Configuration | Independent or half-bridge | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |
| RoHS Status | β | Compliant |