2EDL8124GXUMA1 vs 2ED21064S06JXUMA1 Comparación

Comparación detallada lado a lado de 2EDL8124GXUMA1 por Infineon y 2ED21064S06JXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro 2EDL8124GXUMA1 2ED21064S06JXUMA1
Marca Infineon Infineon
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,98 $0,85
Driver Configuration Half-bridge (high-side + low-side) —
Input Type Non-inverting, TTL-compatible with hysteresis —
Number of Drivers 2 —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Bootstrap Supply (VBS) Maximum 120 V —
VCC Supply Range [DATA_NEEDED: VCC min/max typical range] —
Isolation Type Junction isolation (JI) —
Bootstrap Diode Integrated Integrated
Propagation Delay (typical) < 50 ns 100 ns
Delay Matching Between Channels [DATA_NEEDED: delay matching spec in ns] —
UVLO Present on VCC and VBS —
Rango de temperatura de funcionamiento [DATA_NEEDED: operating temperature range in C] —
Encapsulado PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad PG-DSO-14 (14-pin SOIC)
Tipo de montaje Surface Mount Surface Mount
Nivel MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Estado RoHS Compliant ROHS3 Compliant
Lead-Free Yes —
Función — High-Side and Low-Side Gate Driver
Configuration — Half-Bridge (2 outputs, non-inverting)
Topología — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Input Logic Compatibility — 3.3 V / 5 V CMOS
Temperatura de funcionamiento — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

Hojas de datos y recursos

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