2EDL8124GXUMA1 vs 2ED21064S06JXUMA1 비교
다음의 상세 나란히 비교: 2EDL8124GXUMA1 제조: Infineon 및 2ED21064S06JXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2EDL8124GXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.98 | $0.85 |
| Driver Configuration | Half-bridge (high-side + low-side) | — |
| Input Type | Non-inverting, TTL-compatible with hysteresis | — |
| Number of Drivers | 2 | — |
| Peak Source Current | 3 A | — |
| Peak Sink Current | 4 A | — |
| Bootstrap Supply (VBS) Maximum | 120 V | — |
| VCC Supply Range | [DATA_NEEDED: VCC min/max typical range] | — |
| Isolation Type | Junction isolation (JI) | — |
| Bootstrap Diode | Integrated | Integrated |
| Propagation Delay (typical) | < 50 ns | 100 ns |
| Delay Matching Between Channels | [DATA_NEEDED: delay matching spec in ns] | — |
| UVLO | Present on VCC and VBS | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range in C] | — |
| 패키지 | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad | PG-DSO-14 (14-pin SOIC) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| RoHS 상태 | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| 기능 | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| 토폴로지 | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| 동작 온도 | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |