2EDL8124GXUMA1 vs 2ED21064S06JXUMA1 Vergleich

Detaillierter Direktvergleich von 2EDL8124GXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2EDL8124GXUMA1 2ED21064S06JXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,98 $0,85
Driver Configuration Half-bridge (high-side + low-side) —
Input Type Non-inverting, TTL-compatible with hysteresis —
Number of Drivers 2 —
Peak Source Current 3 A —
Peak Sink Current 4 A —
Bootstrap Supply (VBS) Maximum 120 V —
VCC Supply Range [DATA_NEEDED: VCC min/max typical range] —
Isolation Type Junction isolation (JI) —
Bootstrap Diode Integrated Integrated
Propagation Delay (typical) < 50 ns 100 ns
Delay Matching Between Channels [DATA_NEEDED: delay matching spec in ns] —
UVLO Present on VCC and VBS —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range in C] —
Gehäuse PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad PG-DSO-14 (14-pin SOIC)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS-Status Compliant ROHS3 Compliant
Lead-Free Yes —
Funktion — High-Side and Low-Side Gate Driver
Configuration — Half-Bridge (2 outputs, non-inverting)
Topologie — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Input Logic Compatibility — 3.3 V / 5 V CMOS
Betriebstemperatur — -40C to +125C
Negative Gate Drive Robustness — -0.7 V

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