5CSEBA4U23C7SN vs 5CSEBA4U23C6N Comparación
Comparación detallada lado a lado de 5CSEBA4U23C7SN por Intel y 5CSEBA4U23C6N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Intel
5CSEBA4U23C7SN - Cyclone V SE SoC FPGA, 40K LE, Dual ARM Cortex-A9 | Intel
5CSEBA4U23C7SN ✓ ActivoIntel
5CSEBA4U23C6N - Cyclone V SE SoC FPGA 40K LE, Dual ARM Cortex-A9 | Intel
5CSEBA4U23C6N ✓ ActivoComparación de especificaciones
| Parámetro | 5CSEBA4U23C7SN | 5CSEBA4U23C6N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $18,20 | $86,20 |
| Family | Cyclone V SE SoC FPGA | Cyclone V SE SoC FPGA |
| Device Logic Elements | 40,000 | — |
| Hard Processor System | Dual-core ARM Cortex-A9 MPCore with CoreSight | — |
| HPS Maximum Frequency | 800 MHz | — |
| Adaptive Logic Modules (ALMs) | [DATA_NEEDED: ALM count] | [DATA_NEEDED: ALM count] |
| Embedded Memory (Kbits) | 2,460 | — |
| DSP Blocks (18x18) | 112 | — |
| Maximum User I/Os | 364 | — |
| Encapsulado | 672-ball UBGA, 23x23 mm | 672-pin UFBGA / UBGA, 23 x 23 mm, 0.8 mm pitch |
| Ball Pitch | 0.8 mm | — |
| Process Node | TSMC 28 nm low-power | — |
| Temperatura de funcionamiento | -40C to +85C (industrial) | — |
| Memory Interfaces | DDR2, DDR3, LPDDR2 (hard controller) | — |
| Peripherals (HPS) | USB 2.0 OTG, GbE MAC, CAN, SPI, I2C, UART | — |
| Configuration Modes | JTAG, serial passive/active | JTAG (IEEE 1149.1), Active Serial (AS) via EPCS/EPCQ |
| Speed Grade | C7 | — |
| Estado RoHS | Compliant | Compliant |
| Logic Elements | — | 40,000 |
| Embedded Memory (M10K + MLAB) | — | 2,460 Kbits |
| DSP Blocks (18x18 Multipliers) | — | 112 |
| HPS Processor Cores | — | Dual ARM Cortex-A9 MPCore |
| HPS Maximum CPU Clock | — | 925 MHz |
| Hard Memory Controller | — | DDR3 / DDR3L / LPDDR2 |
| Process Technology | — | TSMC 28 nm low-power |
| Core Voltage (VCC) | — | 1.1 V |
| General-Purpose FPGA I/Os | — | 188 |
| Transceivers | — | Not integrated on SE device |
| Tipo de montaje | — | Surface Mount (BGA) |
| Temperatura de unión de funcionamiento | — | -40 C to +100 C (typical SE spec; exact C6 grade per datasheet) |