BSC010NE2LSIATMA1 vs BSC009NE2LSATMA1 Comparación
Comparación detallada lado a lado de BSC010NE2LSIATMA1 por Infineon y BSC009NE2LSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC010NE2LSIATMA1 | BSC009NE2LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $1,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series / Family | OptiMOS 25V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Encapsulado | PG-TDSON-8-7 (TDSON-8 EP) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | MOSFET (Metal Oxide) |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55C to +150C (TJ) |
| Recuento de pines | 8 | 8 |
| Estado RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | 1 |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at T_a | — | 41 A |
| Continuous Drain Current (I_D) at T_c | — | 100 A (Mouser listing), 255 A pulsed (DigiKey) |
| Pulsed Drain Current (I_DM) | — | 255 A |
| R_DS(on) Max @ V_GS=10V | — | 0.9 mOhm |
| Power Dissipation (T_a) | — | 2.5 W |
| Power Dissipation (T_c) | — | 96 W |
| Gate Threshold Voltage V_GS(th) Typ | — | [DATA_NEEDED: V_GS(th) typical value] |
| Encapsulado / Carcasa | — | PG-TDSON-8-7 (TDSON-8 FL) |