BSC027N06LS5ATMA1 vs IPG20N10S4L35ATMA1 Comparación
Comparación detallada lado a lado de BSC027N06LS5ATMA1 por Infineon y IPG20N10S4L35ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC027N06LS5ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,66 | $0,66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | OptiMOS™, Automotive |
| Part Status | Active | — |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | — |
| Encapsulado / Carcasa | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| Estado RoHS | Compliant | Compliant (Green Product) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Temperatura de funcionamiento | — | 175°C max junction |
| Automotive Qualification | — | AEC-Q101 |
| Nivel MSL | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |