BSC027N06LS5ATMA1 vs IPG20N10S4L35ATMA1 Comparaison
Comparaison détaillée côte à côte de BSC027N06LS5ATMA1 par Infineon et IPG20N10S4L35ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC027N06LS5ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,66 | $0,66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | OptiMOS™, Automotive |
| Part Status | Active | — |
| FET Type | N-Channel | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Continuous Drain Current (ID) at Tc=100°C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| On-Resistance (RDS(on)) max @ VGS=10V | 2.7 mOhm | — |
| On-Resistance (RDS(on)) @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (PD) at Tc=25°C | 83 W | — |
| Plage de température de fonctionnement | -55°C to +150°C | — |
| Boîtier / Format | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Type de montage | Surface Mount | Surface Mount |
| Nombre de broches | 8 | — |
| Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Avalanche Energy Rated | Yes | — |
| Statut RoHS | Compliant | Compliant (Green Product) |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Part Number | — | IPG20N10S4L35ATMA1 |
| FET Feature | — | Logic Level Gate |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| Température de fonctionnement | — | 175°C max junction |
| Automotive Qualification | — | AEC-Q101 |
| Niveau MSL | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |