BSC0501NSIATMA1 vs IPC90N04S5L3R3ATMA1 Comparación
Comparación detallada lado a lado de BSC0501NSIATMA1 por Infineon y IPC90N04S5L3R3ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC0501NSIATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,96 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | OptiMOS 5 40V |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Temperatura de unión de funcionamiento | -55C to +150C | -55°C to +175°C |
| Encapsulado | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-34 (TDSON-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | — |
| Avalanche Rated | Yes | — |
| Technology | Trench-gate OptiMOS 5 | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) at TC=25°C | — | 90 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.3 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25°C) | — | 62 W |
| Storage Temperature Range | — | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | — | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | — | 260°C |
| Qualification | — | AEC-Q101 automotive qualified |
| Avalanche Tested | — | 100% (production-level) |
| RoHS Compliance | — | Compliant (Green Product) |