BSC0501NSIATMA1 vs IPC90N04S5L3R3ATMA1 Comparaison
Comparaison détaillée côte à côte de BSC0501NSIATMA1 par Infineon et IPC90N04S5L3R3ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSC0501NSIATMA1 | IPC90N04S5L3R3ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,65 | $0,96 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | OptiMOS 5 40V |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Température de jonction en fonctionnement | -55C to +150C | -55°C to +175°C |
| Boîtier | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-34 (TDSON-8) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (per JEDEC J-STD-020) | — |
| Statut RoHS | Compliant | — |
| Avalanche Rated | Yes | — |
| Technology | Trench-gate OptiMOS 5 | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) at TC=25°C | — | 90 A |
| On-Resistance RDS(on) max at VGS=10V | — | 3.3 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | 1.7 V to 2.7 V (logic level) |
| Total Power Dissipation (TC=25°C) | — | 62 W |
| Storage Temperature Range | — | [DATA_NEEDED: storage temp range] |
| MSL Moisture Sensitivity | — | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | — | 260°C |
| Qualification | — | AEC-Q101 automotive qualified |
| Avalanche Tested | — | 100% (production-level) |
| RoHS Compliance | — | Compliant (Green Product) |