BSC0501NSIATMA1 vs IPC90N04S5L3R3ATMA1 비교

다음의 상세 나란히 비교: BSC0501NSIATMA1 제조: Infineon 및 IPC90N04S5L3R3ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC0501NSIATMA1 IPC90N04S5L3R3ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.65 $0.96
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V OptiMOS 5 40V
트랜지스터 유형 N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
동작 접합 온도 -55C to +150C -55°C to +175°C
패키지 PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-34 (TDSON-8)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (per JEDEC J-STD-020) —
RoHS 상태 Compliant —
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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