BSC0504NSIATMA1 vs BSC030N08NS5ATMA1 Comparación
Comparación detallada lado a lado de BSC0504NSIATMA1 por Infineon y BSC030N08NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC0504NSIATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,55 |
| Tipo de transistor | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Encapsulado | PG-TDSON-8-6 | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Tensión umbral de puerta | [DATA_NEEDED: gate threshold voltage] | — |
| Resistencia térmica | [DATA_NEEDED: thermal resistance] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Estado RoHS | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | N-Channel Power MOSFET |
| Technology | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (ID,pulse) | — | 161 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| RDS(on) max at VGS=10 V | — | 3.0 mOhm |
| RDS(on) max at VGS=7 V | — | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | — | 2.5 W |
| Power Dissipation (TC=25C) | — | 139 W |
| Operating Temperature Range (TJ) | — | -55C to +150C |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Sin halógenos | — | Yes |
| Lead-Free | — | Yes |
| Gate Drive Logic | — | Standard 10V, compatible with 12V drive |
| Optimized Application | — | Synchronous Rectification |