BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching
N.º de pieza: BSC0504NSIATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
BSC0504NSIATMA1 Descripción general
A power MOSFET is a voltage-controlled transistor used to switch or conduct current in power-conversion and motor-control circuits. The N-channel designation means conduction occurs between its drain and source terminals when a positive gate-to-source voltage is applied. Within the hierarchy, the device belongs to the MOSFET family, the broader transistor category, and the power-semiconductor product class. Its low-voltage, high-current construction targets applications requiring compact switching stages and low conduction losses.
The verified headline ratings include a 30 V drain-to-source rating, 21 A at Ta, 72 A at Tc, 2.5 W dissipation at Ta, and 30 W at Tc. The package is identified by distributor listings as PG-TDSON-8-6, a surface-mount package with an exposed-pad description in the marketplace record. The part is associated with Infineon’s OptiMOS 5 25 V and 30 V product family, which is aimed at high power density and energy efficiency.
BSC0504NSIATMA1 is intended for applications such as synchronous rectification, DC-DC conversion, load switching, and power-management circuits. The 30 V class makes it suitable for low-voltage rails and point-of-load designs where a compact N-channel switch is required. Because the supplied data confirms the package identity and current/power ratings but does not provide a complete datasheet table, parameters such as on-resistance, gate charge, threshold voltage, and thermal resistance require separate datasheet verification.
Designers should verify the complete manufacturer datasheet before selecting the part for a particular gate-drive voltage, switching frequency, or thermal layout. The exposed-pad package and the substantial difference between Ta and Tc ratings indicate that PCB copper, thermal vias, and system cooling can strongly affect achievable load current. Current and power values should therefore be interpreted according to the manufacturer’s application conditions rather than as unrestricted universal limits.
This page combines verified distributor specifications, official Infineon datasheet access, pricing and stock information, drop-in-comparison guidance, and practical design notes. It is intended to support component identification and preliminary engineering evaluation while clearly separating verified values from parameters that still require datasheet confirmation.
Alternativas directas para BSC0504NSIATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSC0504NSIATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Operating Temperature Range, MSL Level, Operating Junction Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSC059N04LS6ATMA1
✅ Sustitución directa✓ En stock
$0.74 / unidad
Ver hoja de datos →BSC014N06NSATMA1
✅ Sustitución directa✓ En stock
$0.89 / unidad
Ver hoja de datos →BSZ060NE2LSATMA1
✅ Sustitución directa✓ En stock
$0.27 / unidad
Ver hoja de datos →IPT007N06NATMA1
✅ Sustitución directa✓ En stock
$2.84 / unidad
Ver hoja de datos →IPD090N03LGATMA1
✅ Sustitución directa✓ En stock
$0.34 / unidad
Ver hoja de datos →BSC0504NSIATMA1 Valores máximos y características eléctricas
| Tipo de transistor | N-channel MOSFET |
| Drain-to-Source Voltage | 30 V |
| Continuous Drain Current at Ta | 21 A |
| Continuous Drain Current at Tc | 72 A |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 30 W |
| Technology Family | OptiMOS 5 |
| Encapsulado | PG-TDSON-8-6 |
| Tipo de montaje | Surface Mount |
| Número de pines | 8 pins |
| Exposed Pad | Yes, according to distributor package description |
| Estado RoHS | unknown |
| Lead-Free Status | unknown |
| Halogen-Free Status | unknown |
| REACH Status | unknown |
Guía de configuración de pines de BSC0504NSIATMA1 pg-tdson-8-6
Configuración de pines para BSC0504NSIATMA1 (encapsulado pg-tdson-8-6). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para BSC0504NSIATMA1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Área de funcionamiento seguro
Aplicaciones típicas
BSC0504NSIATMA1 es adecuado para 6 aplicacións: Synchronous Rectification, DC-DC Converter Switching Stage, Load Switching, Power-Management Rail Control, Compact Motor Drive, High-Density Power Conversion.
Synchronous Rectification
BSC0504NSIATMA1 can be evaluated as the low-side N-channel switch in a synchronous-rectification stage, where its verified 30 V drain-to-source rating is appropriate for low-voltage converter outputs. The 21 A Ta and 72 A Tc current figures provide different thermal reference points for comparing conduction and cooling requirements. Use the exposed-pad PG-TDSON-8-6 package to spread heat into the PCB, but confirm body-diode behavior, gate-drive voltage, switching losses, and the safe operating area in the official datasheet before production. The candidate is most attractive when the design benefits from a compact OptiMOS 5 device and a tightly controlled low-voltage rail.
Recomendado
DC-DC Converter Switching Stage
BSC0504NSIATMA1 fits evaluation in non-isolated DC-DC converter stages operating from low-voltage input rails. Its verified 30 V rating addresses the main drain-voltage class, while the 21 A Ta and 72 A Tc ratings give engineers separate ambient and case-condition benchmarks. Place the device in a synchronous buck or other low-voltage switching topology only after checking the complete manufacturer switching data, including on-resistance, gate charge, switching times, and thermal resistance. PCB layout should minimize high-current loop inductance, keep the gate loop compact, and use the exposed pad with suitable copper and thermal vias.
Recomendado
Load Switching
BSC0504NSIATMA1 is a candidate for electronic load switching where a controlled N-channel MOSFET must carry or interrupt current on a 30 V-class rail. The verified ratings include 21 A at Ta and 72 A at Tc, but the actual usable current depends on conduction loss, switching frequency, duty cycle, ambient temperature, and PCB thermal design. A low-side load switch can use the device to provide a compact power-path element, while a high-side arrangement requires a suitable gate-drive architecture and protection strategy. Confirm gate threshold, on-resistance, absolute maximum ratings, and the exact PG-TDSON-8-6 pin assignment before schematic release.
Recomendado
Power-Management Rail Control
BSC0504NSIATMA1 can serve as a compact N-channel pass or switching element in a low-voltage power-management rail. Its 30 V rating is relevant to systems where the drain node remains within the verified voltage class, and the 2.5 W Ta and 30 W Tc power figures help establish thermal comparison points. The device should be selected only after checking the datasheet’s on-resistance and safe operating area, since those parameters are not included in the supplied verified data. Use a Kelvin-connected gate-drive path, local bypassing, and a defined thermal copper area to preserve switching performance and avoid hot-spot concentration.
Recomendado
Compact Motor Drive
BSC0504NSIATMA1 may be evaluated in compact low-voltage motor-drive stages, including brushed-motor or low-voltage H-bridge applications, where the verified 30 V rating matches the intended bus class. The 21 A Ta and 72 A Tc ratings show why thermal mounting and current derating are central to the design, while the PG-TDSON-8-6 package helps keep the power stage compact. Motor circuits add inductive voltage transients, so verify avalanche or safe operating area behavior, gate protection, current sensing, and thermal limits in the official datasheet. A redesign using a higher-voltage part may be needed if regenerative or switching overshoot exceeds the 30 V class.
Recomendado
High-Density Power Conversion
BSC0504NSIATMA1 is appropriate for preliminary evaluation in high-density power-conversion layouts that require a surface-mount N-channel MOSFET in the PG-TDSON-8-6 package. The verified 30 V rating and OptiMOS 5 family association support low-voltage design goals, while the 2.5 W Ta and 30 W Tc ratings provide a practical starting point for thermal analysis. Designers should confirm the missing on-resistance, gate-charge, switching, and thermal-resistance values before optimizing efficiency. Pair the MOSFET with a short gate loop, a local gate resistor, appropriate snubbing where needed, and a thermal design that accounts for the difference between ambient and case-temperature conditions.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSC0504NSIATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSC059N04LS6ATMA1 | BSC014N06NSATMA1 | BSZ060NE2LSATMA1 | IPT007N06NATMA1 | IPD090N03LGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 | PG-TDSON-8-6 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Transistor Type | N-channel MOSFET | N-channel MOSFET | N-channel MOSFET | N-channel MOSFET | N-channel MOSFET | N-channel MOSFET |
| Drain-to-Source Voltage | 30 V | 40 V | 60 V | 60 V-class | 60 V | 30 V-class |
| Technology Family | OptiMOS 5 | Infineon power MOSFET | Infineon power MOSFET | Infineon power MOSFET | Infineon power MOSFET | Infineon power MOSFET |
Diferenciadores clave
- Verified low-voltage 30 V N-channel rating (frente a BSC059N04LS6ATMA1)
- Verified higher ambient-reference current than several listed candidates (frente a BSC014N06NSATMA1)
- Explicit high current at case-temperature reference (frente a BSC059N04LS6ATMA1)
- Compact exposed-pad surface-mount package (frente a IPD090N03LGATMA1)
Notas de diseño
Use the verified 21 A at Ta and 72 A at Tc ratings as separate thermal-condition benchmarks, not as interchangeable current limits. The Ta condition is more conservative for ambient design, while the Tc condition assumes the case is maintained at its specified reference point. Confirm thermal resistance and derating curves in the official datasheet, then size copper, thermal vias, and cooling from the maximum expected conduction and switching losses. Estimated: the product datasheet has not been parameterized here, so no junction-temperature rise is calculated.
The PG-TDSON-8-6 surface-mount package requires attention to the exposed pad and high-current power-loop layout. Use short, wide drain and source connections, keep the gate-drive return close to the source reference, and place any gate resistor and local supply decoupling near the device. Follow the manufacturer land pattern and exposed-pad recommendations. Because the exact pin assignment is not included in the verified data, do not route the PCB from the package name alone.
Do not assume that a 72 A case-temperature rating permits 72 A in an unrestricted ambient design. Also verify the missing on-resistance, gate charge, threshold voltage, switching times, thermal resistance, safe operating area, and absolute maximum ratings before production. The verified data confirms the 30 V voltage class, 21 A Ta, 72 A Tc, 2.5 W Ta, 30 W Tc, OptiMOS 5 family, and PG-TDSON-8-6 package, but not the complete electrical limit set.
Información de cumplimiento
No explicit RoHS, REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals statement was present in the verified web data. Automotive suitability and compliance claims must be confirmed from the official Infineon documentation.
