BSC0504NSIATMA1 vs BSC030N08NS5ATMA1 对比

详细并排对比 BSC0504NSIATMA1 出自 Infineon 和 BSC030N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC030N08NS5ATMA1 ✓ 量产中

规格对比

参数 BSC0504NSIATMA1 BSC030N08NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.55
晶体管类型 N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
封装 PG-TDSON-8-6 PG-TDSON-8-7 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
栅极阈值电压 [DATA_NEEDED: gate threshold voltage] —
热阻 [DATA_NEEDED: thermal resistance] —
工作温度范围 [DATA_NEEDED: operating temperature range] —
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
RoHS 状态 unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Manufacturer — Infineon Technologies
Product Type — N-Channel Power MOSFET
Technology — OptiMOS 5
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (ID,pulse) — 161 A
Gate-Source Voltage (VGS) max — +/-20 V
RDS(on) max at VGS=10 V — 3.0 mOhm
RDS(on) max at VGS=7 V — [DATA_NEEDED: RDS(on) at VGS=7V]
Power Dissipation (Ta=25C, 1.5mm FR4) — 2.5 W
Power Dissipation (TC=25C) — 139 W
Operating Temperature Range (TJ) — -55C to +150C
MSL 等级 — 1 (per JEDEC J-STD-020)
无卤 — Yes
Lead-Free — Yes
Gate Drive Logic — Standard 10V, compatible with 12V drive
Optimized Application — Synchronous Rectification

数据手册与资源

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