BSC0504NSIATMA1 vs BSC059N04LS6ATMA1 Comparación
Comparación detallada lado a lado de BSC0504NSIATMA1 por Infineon y BSC059N04LS6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC0504NSIATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,74 |
| Tipo de transistor | N-channel MOSFET | — |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| Encapsulado | PG-TDSON-8-6 | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| Tensión umbral de puerta | [DATA_NEEDED: gate threshold voltage] | — |
| Resistencia térmica | [DATA_NEEDED: thermal resistance] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Estado RoHS | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Technology | — | OptiMOS 6 (N-channel MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |