BSC050N04LSGATMA1 vs BSG0813NDIATMA1 Comparación
Comparación detallada lado a lado de BSC050N04LSGATMA1 por Infineon y BSG0813NDIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC050N04LSGATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,41 | $1,05 |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | — |
| Encapsulado | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Power Block |
| Configuration | — | High-side + Low-side, integrated |
| Drain-Source Voltage (VDS) | — | 25 V |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Technology Generation | — | OptiMOS 5 |
| Topología | — | Synchronous buck half-bridge |