BSC050N04LSGATMA1 vs BSG0813NDIATMA1 Comparaison
Comparaison détaillée côte à côte de BSC050N04LSGATMA1 par Infineon et BSG0813NDIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC050N04LSGATMA1 | BSG0813NDIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,41 | $1,05 |
| FET Type | N-Channel | N-Channel MOSFET Array (half-bridge / synchronous buck) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) value] |
| Technology | OptiMOS 3 (trench MOSFET) | — |
| Boîtier | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TISON-8 (5.0 x 6.0 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +150C | [DATA_NEEDED: operating temperature range] |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | 1 (per JEDEC J-STD-020) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Power Block |
| Configuration | — | High-side + Low-side, integrated |
| Drain-Source Voltage (VDS) | — | 25 V |
| Low-Side Continuous Drain Current (ID) | — | 19 A |
| High-Side Continuous Drain Current (ID) | — | 33 A |
| Power Dissipation (PD) | — | 2.5 W |
| RDS(on) - Low-Side | — | [DATA_NEEDED: RDS(on) low-side @ VGS] |
| RDS(on) - High-Side | — | [DATA_NEEDED: RDS(on) high-side @ VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Technology Generation | — | OptiMOS 5 |
| Topologie | — | Synchronous buck half-bridge |