BSC0921NDIATMA1 vs BSC019N04LSTATMA1 Comparación
Comparación detallada lado a lado de BSC0921NDIATMA1 por Infineon y BSC019N04LSTATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSC0921NDIATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,68 | $1,21 |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 25V (N-channel) | OptiMOS 5 (N-channel trench MOSFET) |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) | 17 A (per channel) | — |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | [DATA_NEEDED: pulsed ID limit] |
| Total Power Dissipation (PD) | 1 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Encapsulado | PG-TISON-8 (8-pin, exposed pad) | TDSON-8 (SuperSO8) 5x6 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C (junction) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per Infineon OptiMOS family) | 1 (unlimited) |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | — |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |