BSC0921NDIATMA1 vs BSC019N04LSTATMA1 对比

详细并排对比 BSC0921NDIATMA1 出自 Infineon 和 BSC019N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC0921NDIATMA1 BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 ✓ 量产中
Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ 量产中

规格对比

参数 BSC0921NDIATMA1 BSC019N04LSTATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.68 $1.21
Manufacturer Infineon Technologies —
Technology OptiMOS 25V (N-channel) OptiMOS 5 (N-channel trench MOSFET)
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: pulsed ID limit]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
封装 PG-TISON-8 (8-pin, exposed pad) TDSON-8 (SuperSO8) 5x6 mm
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
RoHS 状态 Compliant Compliant
MSL 等级 1 (per Infineon OptiMOS family) 1 (unlimited)
Primary Application Synchronous buck converters, VRMs, POL regulators —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
工作温度范围 — -55 C to +150 C
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

数据手册与资源

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