BSC118N10NSGATMA1 vs BSC100N10NSFGATMA1 Comparación
Comparación detallada lado a lado de BSC118N10NSGATMA1 por Infineon y BSC100N10NSFGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 ✓ ActivoInfineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC118N10NSGATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $1,49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | N-Channel |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| Encapsulado | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de unión de funcionamiento | -55 C to +150 C | — |
| Technology | Trench MOSFET | MOSFET (Metal Oxide) |
| Lead Plating | Pb-free | — |
| Estado RoHS | Compliant | Compliant |
| Sin halógenos | Yes | — |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| Series | — | OptiMOS |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |